FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). • 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V RDS(ON) = 7.0 mΩ @ VGS = 10 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.8 mm height when mounted to PCB These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. • 3.5 x 4 mm2 Footprint • High power and current handling capability. Applications • DC/DC converters • Solenoid drive D D D D D D S S S S D D S S S S D D S S S S D D G S S S D Pin 1 Top Absolute Maximum Ratings Symbol PD TJ, Tstg TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) Package Marking and Ordering Information Device Marking 7064N 2004 Fairchild Semiconductor Corporation G S Bottom VDSS VGSS ID D F7064 Pin 1 D Device FDZ7064N Reel Size 13” Ratings 30 ±12 13.5 60 2.2 –55 to +150 56 4.5 0.6 Tape width 12mm Units V V A W °C °C/W Quantity 3000 FDZ7064N Rev.D4 (W) FDZ7064N May 2004 Symbol TA = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions ID = 250 µA Min Typ Max Units BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –4.6 gFS Forward Transconductance VGS = 4.5 V, ID = 13.5 A VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.5A, TJ =125°C VDS = 10 V, ID = 13.5 A 6.1 5.4 9.0 92 On Characteristics VGS(th) 30 V mV/°C 21 (Note 2) 0.8 1.2 2.0 V mV/°C 8.0 7.0 13 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15 V, f = 1.0 MHz Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge V GS = 0 V, 3843 pF 522 pF 209 pF (Note 2) VDD = 15 V, VGS = 10 V, VDS = 15 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω 10 ID = 13.5 A, 20 ns 9 18 ns 71 114 ns 18 32 ns 31 43 nC 8 nC 7.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.8 A Voltage Diode Reverse Recovery Time IF = 13.5 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge 0.7 (Note 2) 1.8 1.2 A V 30 nS 35 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' s board design. a) 56°C/W when mounted on a 1in2 pad of 2 oz copper b) 119°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ7064N Rev D4 (W) FDZ7064N Electrical Characteristics FDZ7064N Dimensional Outline and Pad Layout FDZ7064N Rev D4 (W) FDZ7064N Typical Characteristics 2 VGS = 10V ID, DRAIN CURRENT (A) 50 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 2.5V 4.5V 40 30 20 2.0V 10 1.8 VGS = 2.5V 1.6 1.4 3.0V 3.5V 1.2 4.5V 10V 0.8 0 0 0.5 1 1.5 0 2 10 20 Figure 1. On-Region Characteristics. 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 1.6 ID = 13.5A VGS = 10V ID =6.8 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 0.018 0.014 TA = 125oC 0.01 TA = 25oC 0.006 0.002 175 0 o 2 TJ, JUNCTION TEMPERATURE ( C) 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 o 25 C TA = 125oC 30 6 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 40 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. ID, DRAIN CURRENT (A) 6.0V 1 -55oC 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ7064N Rev D4 (W) FDZ7064N Typical Characteristics 5000 ID = 13.5A VDS = 10V 8 4000 20V 6 4 3000 2000 COSS 2 1000 0 0 0 10 20 30 40 50 60 70 CRSS 0 Qg, GATE CHARGE (nC) 5 10 15 25 30 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 1000 100us 100 RDS(ON) LIMIT 1ms 10ms 10 100ms 1 DC VGS = 10V SINGLE PULSE RθJA = 119oC/W 0.1 10s 1s TA = 25oC 0.01 0.01 0.1 1 10 30 20 10 0 0.01 100 SINGLE PULSE RθJA = 119°C/W TA = 25°C 40 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 119 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ7064N Rev D4 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11