Fairchild FDZ7064N 30v n-channel logic level powertrench bga mosfet Datasheet

FDZ7064N
30V N-Channel Logic Level PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
• 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
RDS(ON) = 7.0 mΩ @ VGS = 10 V
• Occupies only 14 mm2 of PCB area. Only 42% of
the area of SO-8
• Ultra-thin package: less than 0.8 mm height when
mounted to PCB
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications resulting in DC/DC power supply
designs with higher overall efficiency.
• 3.5 x 4 mm2 Footprint
• High power and current handling capability.
Applications
• DC/DC converters
• Solenoid drive
D
D
D
D
D
D
S
S
S
S
D
D
S
S
S
S
D
D
S
S
S
S
D
D
G
S
S
S
D
Pin 1
Top
Absolute Maximum Ratings
Symbol
PD
TJ, Tstg
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJB
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
7064N
2004 Fairchild Semiconductor Corporation
G
S
Bottom
VDSS
VGSS
ID
D
F7064
Pin 1
D
Device
FDZ7064N
Reel Size
13”
Ratings
30
±12
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
FDZ7064N Rev.D4 (W)
FDZ7064N
May 2004
Symbol
TA = 25°C unless otherwise noted
Parameter
Off Characteristics
Test Conditions
ID = 250 µA
Min
Typ
Max Units
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
Gate Threshold Voltage
VDS = VGS,
ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
–4.6
gFS
Forward Transconductance
VGS = 4.5 V, ID = 13.5 A
VGS = 10 V,
ID = 14.5 A
VGS = 4.5 V, ID = 13.5A, TJ =125°C
VDS = 10 V,
ID = 13.5 A
6.1
5.4
9.0
92
On Characteristics
VGS(th)
30
V
mV/°C
21
(Note 2)
0.8
1.2
2.0
V
mV/°C
8.0
7.0
13
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
V GS = 0 V,
3843
pF
522
pF
209
pF
(Note 2)
VDD = 15 V,
VGS = 10 V,
VDS = 15 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
10
ID = 13.5 A,
20
ns
9
18
ns
71
114
ns
18
32
ns
31
43
nC
8
nC
7.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V,
IS = 1.8 A
Voltage
Diode Reverse Recovery Time
IF = 13.5 A,
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
0.7
(Note 2)
1.8
1.2
A
V
30
nS
35
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper
chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user'
s board design.
a)
56°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
119°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.Pulse Test: Pulse Width <
300µs, Duty Cycle < 2.0%
FDZ7064N Rev D4 (W)
FDZ7064N
Electrical Characteristics
FDZ7064N
Dimensional Outline and Pad Layout
FDZ7064N Rev D4 (W)
FDZ7064N
Typical Characteristics
2
VGS = 10V
ID, DRAIN CURRENT (A)
50
3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
2.5V
4.5V
40
30
20
2.0V
10
1.8
VGS = 2.5V
1.6
1.4
3.0V
3.5V
1.2
4.5V
10V
0.8
0
0
0.5
1
1.5
0
2
10
20
Figure 1. On-Region Characteristics.
40
50
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
1.6
ID = 13.5A
VGS = 10V
ID =6.8 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0.018
0.014
TA = 125oC
0.01
TA = 25oC
0.006
0.002
175
0
o
2
TJ, JUNCTION TEMPERATURE ( C)
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
50
o
25 C
TA = 125oC
30
6
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
40
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
ID, DRAIN CURRENT (A)
6.0V
1
-55oC
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ7064N Rev D4 (W)
FDZ7064N
Typical Characteristics
5000
ID = 13.5A
VDS = 10V
8
4000
20V
6
4
3000
2000
COSS
2
1000
0
0
0
10
20
30
40
50
60
70
CRSS
0
Qg, GATE CHARGE (nC)
5
10
15
25
30
Figure 8. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
1000
100us
100
RDS(ON) LIMIT
1ms
10ms
10
100ms
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 119oC/W
0.1
10s
1s
TA = 25oC
0.01
0.01
0.1
1
10
30
20
10
0
0.01
100
SINGLE PULSE
RθJA = 119°C/W
TA = 25°C
40
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
CISS
15V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 119 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7064N Rev D4 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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