MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE CM400DU-12NFH ¡IC ................................................................... 400A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM TC measured point 108 (7.5) Dimensions in mm (7.5) 93 ±0.25 14 14 E2 G2 14 E2 25 25 G1 E1 62 48 ±0.25 15 17.5 6 CIRCUIT DIAGRAM (7) 8.85 C1 E2 C1 6 E2 G2 G1 E1 CM C2E1 21.5 2.5 3-M6 NUTS 25.7 4-φ6. 5 MOUNTING HOLES 4 18 2.8 29 LABEL 0.5 0.5 4 7 8.5 18 0.5 22 7 0.5 7.5 18 +1.0 –0.5 (18) (8.25) C2E1 Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Ratings 600 ±20 400 800 400 800 960 1640 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A A A W W °C °C Vrms N•m N•m g (Tj = 25°C, unless otherwise specified) Test conditions Parameter Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 40mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 1.6 — 2.0 1.95 — — — 2480 — — — — — 7.7 — — — 0.04 — — 0.5 2.7 — 110 7.2 4.0 — 400 200 700 150 200 — 2.6 0.13 0.18 — µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Tj = 25°C Tj = 125°C IC = 400A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE = ±15V RG = 3.1Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips (1/2 module) mA V nF nF nF nC ns ns ns ns ns 0.076*3 16 µC V K/W K/W K/W K/W Ω *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 600 10 Tj = 25°C 9.5 9 8.5 500 8 400 300 7.5 200 7 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 100 200 300 400 500 600 700 800 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25°C 4.5 7 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 11 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 700 0 CAPACITANCE Cies, Coes, Cres (nF) 13 15 4 3.5 3 IC = 800A 2.5 IC = 400A 2 1.5 IC = 160A 1 0.5 0 5 3 2 102 7 5 3 2 Tj = 25°C 6 8 10 12 14 16 18 101 20 0.5 1 1.5 2 2.5 3 EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 7 5 7 3 2 5 102 Cies 7 5 3 2 101 7 5 3 2 0 GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 800 td(off) td(on) 3 2 tf tr 102 7 5 3 2 Coes Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 101 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) 2 3 5 7 102 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM400DU-12NFH TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 3 2 Irr trr 102 7 5 3 2 101 1 10 2 3 7 102 5 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 2 3 5 7 103 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 Rth(j–c) = 0.13K/W 10–3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) GATE CHARGE CHARACTERISTICS (TYPICAL) Single Pulse TC = 25°C 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 Rth(j–c) = 0.18K/W 10–3 20 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 10–1 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) 7 5 3 2 7 5 3 2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 IC = 400A VCC = 300V 12 8 4 0 TIME (s) VCC = 200V 16 0 500 1000 1500 2000 2500 3000 3500 GATE CHARGE QG (nC) Feb. 2009 4