Mitsubishi CM400DU-12NFH Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
CM400DU-12NFH
¡IC ................................................................... 400A
¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
TC measured point
108
(7.5)
Dimensions in mm
(7.5)
93 ±0.25
14
14
E2 G2
14
E2
25
25
G1 E1
62
48 ±0.25
15
17.5 6
CIRCUIT DIAGRAM
(7)
8.85
C1
E2
C1
6
E2 G2
G1 E1
CM
C2E1
21.5
2.5
3-M6 NUTS
25.7
4-φ6. 5 MOUNTING HOLES
4
18
2.8
29
LABEL
0.5
0.5
4
7
8.5
18
0.5
22
7
0.5
7.5
18
+1.0
–0.5
(18)
(8.25)
C2E1
Feb. 2009
MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
PC’ (Note 3)
Tj
Tstg
Viso
—
—
—
(Tj = 25°C, unless otherwise specified)
Parameter
Collector current
Emitter current
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Conditions
Collector-emitter voltage
Gate-emitter voltage
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
TC = 25°C
TC’ = 25°C*4
Ratings
600
±20
400
800
400
800
960
1640
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Unit
V
V
A
A
A
A
W
W
°C
°C
Vrms
N•m
N•m
g
(Tj = 25°C, unless otherwise specified)
Test conditions
Parameter
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 40mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
2.0
1.95
—
—
—
2480
—
—
—
—
—
7.7
—
—
—
0.04
—
—
0.5
2.7
—
110
7.2
4.0
—
400
200
700
150
200
—
2.6
0.13
0.18
—
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
Tj = 25°C
Tj = 125°C
IC = 400A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 400A, VGE = 15V
VCC = 300V, IC = 400A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 400A
IE = 400A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied*2 (1/2 module)
Case temperature measured point is just under the chips (1/2 module)
mA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
0.076*3
16
µC
V
K/W
K/W
K/W
K/W
Ω
*1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
*4 : Case temperature (TC’) measured point is just under the chips.
Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGE =
20V
600
10 Tj = 25°C
9.5
9
8.5
500
8
400
300
7.5
200
7
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
3
VGE = 15V
2.5
2
1.5
1
0.5
0
Tj = 25°C
Tj = 125°C
0
100 200 300 400 500 600 700 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
103
Tj = 25°C
4.5
7
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
11
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
700
0
CAPACITANCE Cies, Coes, Cres (nF)
13
15
4
3.5
3
IC = 800A
2.5
IC = 400A
2
1.5
IC = 160A
1
0.5
0
5
3
2
102
7
5
3
2
Tj = 25°C
6
8
10
12
14
16
18
101
20
0.5
1
1.5
2
2.5
3
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
103
7
5
7
3
2
5
102
Cies
7
5
3
2
101
7
5
3
2
0
GATE-EMITTER VOLTAGE VGE (V)
SWITCHING TIME (ns)
COLLECTOR CURRENT IC (A)
800
td(off)
td(on)
3
2
tf
tr
102
7
5
3
2
Coes
Cres
VGE = 0V
100 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
101 1
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
2
3
5 7 102
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
2 3
5 7 103
COLLECTOR CURRENT IC (A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM400DU-12NFH
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part )
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
HIGH POWER SWITCHING USE
3
2
Irr
trr
102
7
5
3
2
101 1
10
2
3
7 102
5
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
Inductive load
2 3
5 7 103
7
5
3
2
Single Pulse
TC = 25°C
10–1
10–1
7
5
3
2
7
5
3
2
10–2
10–2
7
5
3
Per unit base =
2
Rth(j–c) = 0.13K/W
10–3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
Single Pulse
TC = 25°C
10–1
7
5
3
2
7
5
3
2
10–2
10–2
7
5
3
Per unit base =
2
Rth(j–c) = 0.18K/W
10–3
20
GATE-EMITTER VOLTAGE VGE (V)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
10–1
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
EMITTER CURRENT IE (A)
7
5
3
2
7
5
3
2
7
5
3
2
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
IC = 400A
VCC = 300V
12
8
4
0
TIME (s)
VCC = 200V
16
0
500 1000 1500 2000 2500 3000 3500
GATE CHARGE QG (nC)
Feb. 2009
4
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