LRC LR8406 1.2a, 1.2mhz synchronous boost converter with output disconnect Datasheet

LESHAN RADIO COMPANY, LTD.
1.2A, 1.2MHz Synchronous Boost Converter
with Output Disconnect
„
/5 Series
„
FEATURES:
The /5 devices provide a power supply
z
Up to 96% Efficiency
solution for products powered by either a one-cell,
z
True Output Load Disconnect During
INTRODUCTION:
two-cell, or three-cell alkaline, NiCd or NiMH, or
Shutdown
one-cell Li-ion or Li-polymer battery. The boost
z
Delivers [email protected] from Single AA Cell
converter
frequency,
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Delivers 300mA@5V from Two AA Cells
pulse-width-modulation (PWM) controller using a
z
Delivers 600mA@5V from Single Li Cell
synchronous rectifier to obtain maximum efficiency,
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Low Voltage Start-Up: 0.85V
which contain an internal NMOS switch and
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Continuous Switching at Light Loads
PMOS synchronous rectifier. The maximum peak
z
Internal Synchronous Rectifier
current in the boost switch is typically limited to a
z
Current Mode Control
is
based
on
a
fixed
value of 1.2A.
with Internal Compensation
A switching frequency of 1.2MHz minimizes
z
1.2MHz Fixed Frequency Switching
solution footprint by allowing the use of tiny, low
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Input Range: 0.5V to 4.5V
profile inductors and ceramic capacitors. The
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Output Range: 2.5V to 4.3V (Up to 5.5V with
current
mode
PWM
design
is
internally
Schottky)
compensated, reducing external parts count.
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Logic Controlled Shutdown(<1ȝA)
Anti-ringing control circuitry reduces EMI concerns
z
Anti-ringing Control Minimizes EMI
by damping the inductor in discontinuous mode.
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1.2A Peak Switch Current Limit
The converter can be disabled to minimize battery
z
Over Temperature Protection
drain. During shutdown, the load is completely
z
Tiny External Components
disconnected
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Low Profile (1mm) SOT-23 Package
from
the
battery.
The
device
features low shutdown current less than 1ȝA.
„
APPLICATIONS˖
˖
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Digital Still and Video Cameras
z
Portable Applications Using Single Li+ Cell
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Bus Powered USB Hosts
z
USB Hosts Without Native 5-V Supplies
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Portable Audio Players
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LCD Bias Supplies
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Wireless Handsets
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GPS Receivers
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Personal Medical Products
9HU
White LED Lighting
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„
ORDER INFORMATION(1)
Operating free air
temperature range
Output Voltage
-40~+85ć
Adjustable
-40~+85ć
3.3V
-40~+85ć
5.0V
Package
Device No.
/58406AE
SOT-23-6
/58406A33E
/58406A50E
(1) Contact Chipower to check availability of other fixed output voltage versions.
„
TYPICAL APPLICATION CIRCUIT
Figure 1 Standard Application Circuit
„
PIN CONFIGURATION:
PIN ASSIGNMENTS
(TOP VIEW)
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Table 1.
PIN
NO.
NAME
SOT23-6
TYPE(1)
Pin Description
DESCRIPTION
Switch Pin. Connect an inductor between this pin and VIN. Keep the PCB trace
1
SW
I/O
lengths as short and wide as is practical to reduce EMI and voltage overshoot. If
the inductor current falls to zero, or pin CE is low, an internal anti-ringing switch is
connected from this pin to VIN to minimize EMI.
Signal and Power Ground.
Connect GND with large copper areas directly to the input and output supply
returns and negative terminals of the input and output capacitors..
2
GND
P
This pin should be connected to a continuous PCB ground for high-current power
converter as close as to the device by several vias directly under the IC for
electrical contact and rated thermal performance. It dissipates the heat from the
IC.
Feedback Input / Not Connect (for fixed Voltage).
Feedback Input to the gm Error Amplifier. Connect resistor divider tap to this pin.
The output voltage can be adjusted from 2.5V to 5.5V by:
VOUT =1.23V噝[1+(R2/R1)]
3
FB/NC
I
The feedback network, resistors R1 and R2, should be kept close to the FB pin,
and away from the inductor, SWʙinductor and Schottky diode switching node on
the PCB layout to minimize copper trace connections that can inject noise into
the system.
Chip Enable.
CE=High: Normal free running operation, 1.2MHz typical operating frequency.
4
CE
I
CE=Low: Shutdown; quiescent current <1ȝA. Output capacitor can be completely
discharged through the load or feedback resistors. An anti-ringing switch is
internally connected between SW and VIN. If CE is undefined, pin SW may ring.
Output Voltage Sense Input and Drain of the Internal Synchronous Rectifier
P-MOSFET.
Bias is derived from VOUT when VOUT exceeds 2.3V. PCB trace length from VOUT
to the output filter capacitor(s) should be as short and wide as possible. Care
5
VOUT
I/O
should be taken to minimize the loop area formed by the output filter capacitor(s)
connections, the VOUT pin, and the /5 ground pin. The minimum
recommended output filter capacitance is 4.7ȝF ceramic with a X5R or X7R
dielectric and the optimum placement is closest to the VOUT pin and the GND pin.
VOUT is completely disconnected from VIN when CE is low, due to the output
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disconnect feature.
Battery Input Voltage. The device gets its start-up bias from VIN. Once VOUT
exceeds 2.3V, bias comes from VOUT. Thus, once started, operation is completely
independent from VIN. Operation is only limited by the output power level and the
battery’s internal series resistance. PCB trace length from VIN to the input filter
6
VIN
I
capacitor(s) should be as short and wide as possible. Care should be taken to
minimize the loop area formed by the input filter capacitor(s) connections, the
VIN pin, and the /5 ground pin. The minimum recommended input filter
capacitance is 4.7ȝF ceramic with a X5R or X7R dielectric and the optimum
placement is closest to the VIN pin and the GND pin.
(1) I = input; O = output; P = power
„
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise specified, TA=25°C)(1)
PARAMETER
SYMBOL
RATINGS
UNITS
Input Voltage(2)
VIN
-0.3~7
V
-0.3~7
V
-0.3~7
V
SW Voltage(2)
(2)
CE, FB Voltage
Output Voltage range (2)
VOUT
-0.3~7
V
Peak SW Sink and Source Current
ISWMAX
1.5
A
Tj
-40~150
ć
Storage Temperature
Tstg
-40~125
ć
Lead Temperature(Soldering, 10 sec)
Tsolder
260
ć
Human Body Model - (HBM)
4000
V
Machine Model- (MM)
200
V
Operating Virtual Junction
Temperature Range
ESD rating(3)
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under
recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods
my affect device reliability.
(2) All voltages are with respect to network ground terminal.
(3) ESD testing is performed according to the respective JESD22 JEDEC standard.
The human body model is a 100 pF capacitor discharged through a 1.5kȍ resistor into each pin. The machine model is a
200pF capacitor discharged directly into each pin.
CAUTION
This integrated circuit can be damaged by ESD if you don’t pay attention to ESD protection. Chipower recommends that all
integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures
can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision
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integrated circuits may be more susceptible to damage because very small parametric changes could cause the device
not to meet its published specifications.
„
DISSIPATION RATINGS(1)
PACKAGE
șJA(2)
ćPOWER RATING
TAч25ć
DERATING FACTOR ABOVE TA=25ć
SOT-23-6
250°C /W
400mW
4mW/°C
(1) Exceeding the maximum junction temperature will force the device into thermal shutdown.
(2) șJA is measured in the natural convection at TA=25°C on a low effective single layer thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
„
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNITS
Supply voltage at VIN
0.9
5.5
V
Output voltage at VOUT
2.5
5.5
V
Operating free air temperature range(1), TA
-40
85
ć
Operating junction temperature range, Tj
-40
125
ć
(1) The /5 is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 85
°C operating temperature range are assured by design, characterization and correlation with statistical process controls.
„
ELECTRICAL CHARACTERISTICS
Typical values are at TA=25ć, unless otherwise specified, specifications apply for condition
VIN=VCE=1.2V, VOUT=3.3 V.
PARAMETER
TYP(1)
MAX
UNITS
ILOAD=1mA
0.85
1
V
VCE=VIN
0.5
0.65
V
300
500
ȝA
0.1
1.0
ȝA
VIN
V
0.4
V
±0.1
±1
ȝA
0.9
1.2
1.5
MHz
80
87
SYMBOL
CONDITIONS
VSTART
VIN(MIN)
MIN
POWER SUPPLIES
Minimum Start-Up Voltage
Minimum Operating Voltage
(2)
Operating quiescent current into VOUT
Shutdown Current into IN
IQ
ISHDN-IN
Measured On VOUT,
Nonswitching
VCE=0V
CHIP ENABLE INPUT LOGIC SIGNAL CE
CE High-level Voltage
VCEH
VCE Falling, Device ON
CE Low-level Voltage
VCEL
VCE Rising, Device Off
CE Leakage Current
ICE
1.5
VCE=5.0V
OSCILLATOR
Oscillator Frequency
Max Duty Cycle
fosc
DMAX
VFB=1.15V
%
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POWER SWITCH
N-CH MOSFET On Resistance(3)
RDS(ON)
(3)
P-CH MOSFET On Resistance
N-CH MOSFET Switch Leakage
ISWLEAK
P-CH MOSFET Switch Leakage
NMOS Cycle by Cycle Current Limit
(4)
ICL
VOUT=3.3V
350
VOUT=5.0V
200
VOUT=3.3V
450
VOUT=5.0V
300
VSW=5.0V
±0.01
±1
ȝA
VSW=5.0V, VOUT=0V
±0.01
±1
ȝA
VOUT=5.0V
1.2
A
40
nS
(5)
Current Limit Delay to Output
mȍ
OUTPUT
Output Voltage Range(6)
VOUT
2.5
Feedback regulation voltage
VFB
1.192
Feedback Input bias Current(7)
IFB
1.230
VFB=1.30V
5.5
V
1.268
V
±50
nA
OVER TEMPERATURE PROTECTION
Thermal Shutdown
Thermal Shutdown Hysteresis
TTSD
150
ć
TTSDHYS
15
ć
(1) Typical numbers are at 25°C and represent the most likely norm.
(2) Minimum VIN operation after start-up is only limited by the battery’s ability to provide the necessary power as it enters
a deeply discharged state.
(3) Does not include the bond wires. Measured directly at the die.
(4) Duty cycle affects current limit due to ramp generator.
(5) Specification is guaranteed by design and not 100% tested in production.
(6) The fixed voltage version effective output voltage.
(7) Bias current flows into FB pin. Specification is guaranteed by design and not 100% tested in production.
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„
BLOCK DIAGRAM
Future 2. Functional Block Diagram
„ DETAILED DESCRIPTION
The /5 is a 1.2MHz synchronous boost converter housed in a 6-lead thin SOT-23 package. Able to
operate from an input voltage below 1V, the devices feature fixed frequency, current mode PWM control
for exceptional line and load regulation. With its low RDS(ON) and gate charge internal MOSFET switches,
the devices maintain high efficiency over a wide range of load current. Its high 1.2MHz switching
frequency facilitates output filter component size reduction for improved power density and reduced
overall footprint. It also provides greater bandwidth and improved transient response over other lower
frequency boost converters.
Operation can be best understood by referring to the Functional Block Diagram.
CONTROLLER CIRCUIT
The controller circuit of the device is based on a fixed frequency multiple feed-forward controller topology.
Input voltage, output voltage, and voltage drop on the NMOS switch are monitored and forwarded to the
regulator. So, changes in the operating conditions of the converter directly affect the duty cycle and must
not take the indirect and slow way through the control loop and the error amplifier. The control loop,
determined by the error amplifier, only has to handle small signal errors. The input for it is the feedback
voltage on the FB pin. It is compared with the internal reference voltage to generate an accurate and
stable output voltage.
The peak current of the NMOS switch is also sensed to limit the maximum current flowing through the
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switch and the inductor. The typical peak-current limit is set to 1.2A. An internal temperature sensor
prevents the device from getting overheated in case of excessive power dissipation.
SYNCHRONOUS RECTIFICATION
The device integrates an N-channel and a P-channel MOSFET transistor to realize a synchronous rectifier,
which improves efficiency and eliminates the need of an external Schottky diode. Because the commonly
used discrete Schottky rectifier is replaced with a low RDS(on) PMOS switch, which reduces the conduction
loss , the power conversion efficiency reaches values above 90%.
SLOPE COMPENSATION
The /5 is based on a slope compensated current mode PWM control topology. It operates at a fixed
frequency of 1.2MHz. At the beginning of each clock cycle, the main switch (NMOS) is turned on and the
inductor current starts to ramp.
After the maximum duty cycle or the sense current signal equals the error amplifier (EA) output, the main
switch is turned off and the synchronous switch (PMOS) is turned on. Slope compensation provides
stability in constant frequency architecture by preventing sub-harmonic oscillations at high duty cycles. It
is accomplished internally by adding a compensating ramp to the inductor current signal at duty cycles in
excess of 50%.This control topology features stable switching and cycle-by-cycle current limiting which
can prevent the main switch from overstress and the external inductor from saturating, it provides
excellent load and line response.
LOW VOLTAGE START-UP
The /5 includes an independent start-up oscillator designed to start up at a typical VIN voltage of
0.85V or higher. In this mode, the IC operates completely open-loop and the current limit is also
set internally to 600mA typically. The low voltage start-up circuitry controls the internal NMOS switch up
to a maximum peak inductor current of 600mA typically, with an approximate 0.5ms (approx.) off-time
during start-up, allowing the devices to start up into an output load. Once the output voltage exceeds
2.3V, the start-up circuitry is disabled and normal close-loop fixed frequency PWM operation is
initiated. In this mode, the /5 power themselves from VOUT instead of VIN and operates
independent of VIN, allowing extended operating time as the battery voltage can droop to several tenths
of a volt without affecting the circuit operation. The only limiting factor for the application becomes the
ability of the battery to supply sufficient energy to the output. The current limit is also set internally to
1.2A typically
LOW NOISE FIXED FREQUENCY OPERATION
Oscillator: The frequency of operation is internally set to 1.2MHz.
Error Amplifier: The error amplifier is an internally compensated transconductance type (current output).
The internal 1.23V reference voltage is compared to the voltage at the FB pin to generate an error signal
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at the output of the error amplifier. A voltage divider from VOUT to ground programs the output voltage via
FB from 2.5V to 5.5V using the equation:
VOUT=1.23V噝[1+(R2/R1)]
Current Sensing: Lossless current sensing converts a signal representing NMOS switch current to a
voltage to be summed with the internal slope compensation. The summed signal is compared to the error
amplifier output to provide a peak current control command for the PWM. Peak switch current is limited to
approximately 1.2A independent of input or output voltage. The switch current signal is blanked for 40ns
to enhance noise rejection.
Zero Current Comparator: The zero current comparator monitors the inductor current to the output and
shuts off the synchronous rectifier once this current reduces to approximately 27mA. This prevents the
inductor current from reversing in polarity thereby improving efficiency at light loads.
Antiringing Control: The antiringing control circuitry prevents high frequency ringing of the SW pin as
the inductor current goes to zero in discontinuous mode by placing a resistor across the inductor to damp
the resonant circuit formed by L and CSW (capacitance on SW pin).
OUTPUT DISCONNECT AND INRUSH LIMITING
The /5 is designed to allow true output disconnect by eliminating backgate diode conduction of the
internal PMOS rectifier. In conventional synchronous rectifier circuits, the backgate diode of the highside PMOS is forward biased in shutdown and allows current flowing from the battery to the output.
However, this device uses a special circuit which takes the cathode of the backgate diode of the highside PMOS and disconnects it from the source when the converter is not enabled (CE=low).
The benefit of this feature for the system design engineer is that the battery is not depleted during
shutdown of the converter. No additional components must be added to the design to make sure that the
battery is disconnected from the output of the converter. This allows VOUT to go to zero volts during
shutdown, drawing zero current from the input source.
It also allows for inrush current limiting at start-up, minimizing surge currents seen by the input supply.
Note that to obtain the advantage of output disconnect, there must not be an external Schottky diode
connected between the SW pin and VOUT.
Board layout is extremely critical to minimize voltage overshoot on the SW pin due to stray inductance.
Keep the output filter capacitor as close as possible to the VOUT pin and use very low ESR/ESL ceramic
capacitors tied to a good ground plane. For applications with VOUT over 4.3V, a Schottky diode is required
to limit the peak SW voltage to less than 6V unless some form of external snubbing is employed. This
diode must also be placed very close to the pins to minimize stray inductance.
See the Applications Information.
DEVICE SHUTDOWN
When CE is set logic high, the /5 is put into active mode operation. If CE is set logic low, the device
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is put into shutdown mode and draws less than 1ȝA current from battery. After start-up, the internal
circuitry is supplied by VOUT, however, if shutdown mode is enabled, the internal circuitry will be supplied
by the input source again.
If CE is driven from a logic-level output, the logic high-level (on) should be referenced to VOUT to avoid
intermittently switching the device on.
Note:
If pin CE is not used, it should be connected directly to pin VOUT.
In cases where there is residual voltage during shutdown, some small amount of energy will be
transferred from pin VOUT to pin VIN immediately after shutdown, resulting in a momentary spike of the
voltage at pin VIN. The ratio of CIN and COUT partly determine the size and duration of this spike, as does
the current-sink ability of the input device.
Thermal Shutdown
If the die temperature reaches 150°C, the part will go into thermal shutdown, all switches will be turned off
The part will be enabled again when the die temperature drops by about 15°C.
„
TYPICAL PERFORMANCE CHARACTERISTICS
(TA=25ć
ć, unless otherwise specified, Test Figure1 above)
Table of Graphs
FIGURE
Figure3
Ș
Efficiency
vs Output Current
Figure5
and Input Voltage
Figure7
Figure9
Figure4
¨VOUT
Load Regulation
vs Output Current
Figure6
and Input Voltage
Figure8
Figure10
VSTART
Minimum Start-Up Voltage
SW Pin Antiringing Operation
Waveforms
SW Pin Fixed Frequency, Continuous
Inductor Current Operation
VOUT Load transient response
vs Output Current
Figure11
Figure12
Figure13
Figure14
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Efficiency vs Output Current
Figure 3
Load Regulation
Figure 4
Efficiency vs Output Current
Load Regulation
Figure 5
Figure 6
Efficiency vs Output Current
Load Regulation
Figure 7
Figure 8
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Efficiency vs Output Current
Figure 9
Minimum Start-Up Voltage vs Output Current
Figure 11
Load Regulation
Figure 10
SW Pin Antiringing Operation
Figure 12
SW Pin Fixed Frequency,
Continuous Inductor Current Operation
Figure 13
VOUT Load Transient Response
Figure 14
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„
APPLICATION
INFORMATION
DESIGN PROCEDURE
The /5 dc-dc converter is intended for systems powered by a single-cell, up to triple-cell alkaline,
NiCd, NiMH battery with a typical terminal voltage between 0.9V and 4.5V. It can also be used in
systems powered by one-cell Li-ion or Li-polymer with a typical voltage between 2.7V and 4.2V.
Additionally, any other voltage source with a typical output voltage between 0.9 V and 4.5 V can power
systems where the /5 is used. Due to the nature of boost converters, the output voltage
regulation is only maintained when the input voltage applied is lower than the programmed output
voltage.
Setting The Output Voltage
For the /5 adjustable output version, the internal 1.23V reference voltage is compared to the
voltage at the FB pin to generate an error signal at the output of the error amplifier. A voltage divider from
VOUT to ground programs the output voltage via FB from 2.5V to 5.5V using the equation:
VOUT=1.23V噝[1+(R2/R1)]
The use of 1% accuracy metal film resistor is recommended for the better output voltage accuracy. To
minimize the power consumption under light loads, it is desirable to choose large resistance values for
both R1 and R2.
Table1 lists the recommended values for particular output voltage settings.
Table 1. Resistor Selection for VOUT Setting
VOUT
R2(ȍ)
R1(ȍ)
3.3V
1.02M
604K
5.0V
1.02M
332K
Fixed Output Voltage
The /5 has two fixed output voltage options: 3.3V and 5V. An internal resistor divider is connected to
the FB pin internally, which eliminates the need for external feedback resistors. When designing with
the fixed output voltage option, remember to leave the FB pin open; otherwise the output voltage
will be affected. However, a feed-forward capacitor can still be added between the FB pin and
VOUT pin to enhance the control loop performance.
Inductor Selection
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The /5FDQ utilize small surface mount and chip inductors due toLWV IDVW 1.2MHz switching frequency.
Typically, a 4.7ȝH inductor is recommended for most applications. Larger values of inductance will allow
greater output current capability by reducing the inductor ripple current. Increasing the inductance above
10ȝH will increase size while providing negligible improvement in output current capability.
The approximate output current capability of the /5 versus inductance value is given in the equation
below:
IOUT(MAX) = Ș噝(ICLˉ
୚౅ొ Ȉୈ
)噝(1ˉD)
ʹ୐Ȉ୤౥౩ౙ
where:
Ș = estimated efficiency;
ICL = peak current limit value (1.2A);
VIN = input (battery) voltage;
D = steady-state duty ratio = (VOUT VIN)/VOUT;
fOSC = switching frequency (1.2MHz typ.);
L = inductor value.
The minimum inductance value is given by:
L൐
ሺ ሻ Ȉሺሺሻ െ ሺ ሻ ሻ
‹’’Ž‡ȈሺሻȈˆ
‘•
where:
Ripple = Allowable inductor current ripple (amps peak-peak)
VIN(MIN) = Minimum input voltage
VOUT(MAX) = Maximum output voltage
The inductor current ripple is typically set for 20% to 40% of the maximum inductor current (IP). High
frequency ferrite core inductor materials reduce frequency dependent power losses compared to cheaper
powdered iron types, improving efficiency. The inductor should have low ESR (series resistance of the
windings) to reduce the I2R power losses, and must be able to handle the peak inductor current without
saturating. Molded chokes and some chip inductors usually do not have enough core to support the
peak inductor currents of 1.2A seen on the /5. To minimize radiated noise, use a toroid, pot
core or shielded bobbin inductor. See Table 2 for some suggested components and suppliers.
Table2. Representative SMD Inductors
Max
Rated DC
Size
DCR
Current
L×W×H
(mȍ)
(A)
(mm3)
3.3
85
1.10
4.7
105
0.90
Part
Value
Number
(ȝH)
Sumida
CDRH
3.8×3.8×1.8
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3D16
6.8
170
0.73
10
210
0.55
3.3
86.2
1.44
Sumida
4.7
108.7
1.15
CR43
6.8
131.2
0.95
10
182
1.04
3.3
110
1.04
4.7
162
0.84
6.8
200
0.76
10
200
0.61
Sumida
CDRH
4D18
4.8×4.3×3.5
5.0×5.0×2.0
Different core materials and shapes will change the size/current and price/current relationship of an
inductor. The choice of which style inductor to use often depends more on the price vs. size
requirements and any radiated field/EMI requirements than on what the /5 requires to operate.
Table 2 shows some typical surface mount inductors that work well in /5 applications.
Output and Input Capacitor Selection
Low ESR (equivalent series resistance) capacitors should be used to minimize the output voltage ripple.
Multilayer ceramic capacitors are an excellent choice as they have extremely low ESR and are available
in small footprints. A 4.7ȝF to 15ȝF output capacitor with 10V voltage rating is sufficient for most
applications. Larger values up to 22ȝF may be used to obtain extremely low output voltage ripple and
improve transient response. An additional phase lead capacitor may be required with output capacitors
larger than 10ȝF to maintain acceptable phase margin. X5R and X7R dielectric materials are preferred for
their ability to maintain capacitance over wide voltage and temperature ranges.
Low ESR input capacitors reduce input switching noise and reduce the peak current drawn from the
battery. It follows that ceramic capacitors are also a good choice for input decoupling and should be
located as close as possible to the device. A 10ȝF input capacitor with 10V voltage rating is sufficient for
virtually any application. Larger values may be used without limitations.
Table 3 shows a list of several ceramic capacitor manufacturers. Consult the manufacturers directly for
detailed information on their entire selection of ceramic capacitors.
Table 3. Capacitor Vendor Information
SUPPLIER
WEBSITE
TDK
www.tdk.com
AVX
www.avxcorp.com
Murata
www.murata.com
Applications Where VOUT > 4.3V
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When the output voltage is programmed above 4.3V, it is necessary to add a Schottky diode either from
SW to VOUT, or to add a snubber network in order to maintain an acceptable peak voltage on the SW pin.
The Schottky diode between SW and VOUT will provide a peak efficiency improvement but will negate the
output disconnect feature. If output disconnect is required, an active snubber network is suggested as
shown below. Examples of Schottky diodes are: MBR0520L, PMEG2010EA, 1N5817 or equivalent.
Figure 15. Application Circuit for VOUT > 4.3V Where Inrush Current Limiting
and Output Disconnect are Required
Figure 16. Application Circuit for VOUT > 4.3V Where Inrush Current Limiting
and Output Disconnect are Not Required
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PCB LAYOUT CONSIDERATIONS
The high speed operation of the /5 demands careful attention to board layout. You will not get
advertised performance with careless layout.
In the /5 boost regulator circuit, high pulsing current flows through two circuit loops. The first loop
starts from the input capacitors, to the filter inductor, to the SW pin, to the internal NMOS switch, to
the ground and back to the input capacitor, when the main switch turns on. The second loop starts from
input capacitor, to the filter inductor, to the SW pin, to the internal PMOS switch, to the VOUT pin, to the
ground and back to the input capacitor, when the main switch is off(while the synchronous switch is on).
In PCB layout, minimizing the two loops area reduces the noise of this circuit and improves efficiency.
Figure 17 shows the recommended component placement.
RECOMMENDED COMPONENT PLACEMENT. TRACES
CARRYING HIGH CURRENT ARE DIRECT. TRACE AREA AT
FB PIN IS SMALL. LEAD LENGTH TO BATTERY IS SHORT
Figure 17. Recommended Component Placement for Single Layer Board
For the best electric and thermal performance, the following suggestions should be taken. These items
are also illustrated graphically in Figure 17.
1)
The GND pin of the IC is the ground connection for high-current power converter node. High current
return for the low-side driver and power N-MOSFET. Connect GND with large copper areas directly to
the input and output supply returns and negative terminals of the input and output capacitors. It is
desirable to maximize the PCB copper area connecting to GND pin to achieve the best thermal and
noise performance. A multilayer board with a separate ground plane is ideal, but not absolutely
necessary.
LESHAN RADIO COMPANY, LTD.
2)
Place the (+) plate of CIN near VIN as closely as possible and the loop area formed by CIN and GND
must be minimized to maintain input voltage steady and filter out the pulsing input current. For
additional input voltage filtering, a 100nF bypass capacitor can be placed in parallel with CIN, close to
the VIN, to shunt any high frequency noise to ground.
3)
The output capacitor, COUT, should be placed as closely as possible to the VOUT pin. Any copper trace
connections for the COUT capacitor can increase the series resistance, which directly effects output
voltage ripple. For additional output voltage filtering, a low ESR ceramic bypass capacitor can be
placed in parallel with COUT, to shunt any high frequency noise to ground. Care should be taken to
minimize the loop area formed by the bypass capacitor connections, the VOUT pin, and the /5
GND pin. The minimum recommended bypass capacitance is 100nF ceramic with a X5R or X7R
dielectric and the optimum placement is closest to the VOUT pin.
4)
The GND of the IC, the (-) plate of CIN and COUT should be connected as closely as possible, together
directly to a ground plane.
5)
Make the current trace from IN to inductor to SW pin (when internal main NMOS turn on) as short as
possible to reduce power dissipation and increase overall efficiency. Also the current trace from IN to
inductor to SW pin and the current trace from VOUT pin to COUT to GND (when internal synchronous
PMOS turn on) should be as short as possible. Put enough multiply-layer pads when they need to
change the trace layer.
6)
The PCB copper area associated with SWʙinductor switching node must be minimized to reduce EMI
and avoid the potential noise problem.
7)
The feedback network, resistors R1 and R2 must be connected to FB pin directly as closely as
possible. And FB is a sensitive signal node, trace area at FB pin should be small, please keep it away
from SWʙinductor switching node on the PCB layout to avoid the noise inject into the system.
8)
If the system chip interfacing with the CE pin has a high impedance state at shutdown mode and the
VIN is connected directly to a power source such as a Li-Ion battery, it is desirable to add a pull down
1Mohm resistor between the CE and GND pins to prevent the noise from falsely turning on the boost
regulator at shutdown mode.
9)
Pour copper plane on all unused board area and connect it to stable DC nodes, like VIN, ground or
VOUT.
THERMAL INFORMATION
Implementation of integrated circuits in low-profile and fine-pitch surface-mount packages typically
requires special attention to power dissipation. Many system-dependent issues such as thermal coupling,
airflow, added heat sinks and convection surfaces, and the presence of other heat-generating
components affect the power-dissipation limits of a given component.
Three basic approaches for enhancing thermal performance follow.
噝 Improving the power dissipation capability of the PCB design
LESHAN RADIO COMPANY, LTD.
噝 Improving the thermal coupling of the component to the PCB
噝 Introducing airflow in the system
The maximum recommended junction temperature (TJ) of the /5 devices is 125°C. The thermal
resistance of the 6-pin thin SOT-23 package is șJA=250°C/W. Specified regulator operation is assured to
a maximum ambient temperature TA of 85°C. Therefore, the maximum power dissipation is about
308mW. More power can be dissipated if the maximum ambient temperature of the application is lower.
ሺ୘ెሺ౉ఽ౔ሻ ି୘ఽ ሻ ଵଶହιେି଼ହιେ
PD(MAX)=
=
=160mW
ଶହ଴ιେȀ୛
஘ెఽ
APPLICATION EXAMPLES
List of Components:
U1 = /58406AE
L1 = 4.7ȝH Wurth Elektronik 744031004
CIN = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
COUT = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
Figure18. Power Supply Solution for Maximum Output Power Operating
from a Single or Dual Alkaline Cell
List of Components:
U1 = /58406AE
L1 = 4.7ȝH Taiyo Yuden CB2016B4R7M
CIN = 1 x 4.7ȝF, 0603, X7R/X5R Ceramic
COUT = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
LESHAN RADIO COMPANY, LTD.
Figure 19. Power Supply Solution Having Small Total Solution Size
List of Components:
U1 = /58406AE
L1 = 4.7ȝH Taiyo Yuden CB2016B4R7M
CIN = 1 x 4.7ȝF, 0603, X7R/X5R Ceramic
COUT = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
Figure 20. Power Supply Solution for Powering White LEDs in Lighting Applications
List of Components:
U1 = /58406AE
L1 = 4.7ȝH Wurth Elektronik 744031004
CIN = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
COUT = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
Figure 21. Power Supply Solution With Auxiliary Positive Output Voltage
LESHAN RADIO COMPANY, LTD.
List of Components:
U1 = /58406AE
L1 = 4.7ȝH Wurth Elektronik 744031004
CIN = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
COUT = 2 x 4.7ȝF, 0603, X7R/X5R Ceramic
Figure 22. Power Supply Solution With Auxiliary Negative Output Voltage
LESHAN RADIO COMPANY, LTD.
„
PACKAGING INFORMATION
„
SOT-23-6 Package Outline Dimensions
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.050
1.250
0.041
0.049
A1
0.000
0.100
0.000
0.004
A2
1.050
1.150
0.041
0.045
b
0.300
0.500
0.012
0.020
c
0.100
0.200
0.004
0.008
D
2.820
3.020
0.111
0.119
E
1.500
1.700
0.059
0.067
E1
2.650
2.950
0.104
0.116
e
0.950(BSC)
0.037(BSC)
e1
1.800
2.000
0.071
0.079
L
0.300
0.600
0.012
0.024
ș
0°
8°
0°
8°
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