NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode applications. Features: D Fast Turn–On Times @ TC = +100°C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100°C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current Applications: D Switching Regulators D Inverters D Solenoids D Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Device Dissipation, PD TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C Note 1. Pulse Test: Pulse Width ≤ 5µs, Duty Cycle ≥ 10%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) Table 2, IC = 100mA, IB = 0 450 – – V TC = +25°C – – 0.25 mA TC = +100°C – – 1.5 mA OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEV VCEV = 850V, VBE(off) = 1.5V ICER VCE = 850V, RBE = 50Ω, TC = +100°C – – 2.5 mA IEBO VEB = 6V, IC = 0 – – 1.0 mA IC = 5A, IB = 700mA – – 2.5 V TC = +25°C – – 3.0 V TC = +100°C – – 3.0 V TC = +25°C – – 1.5 V TC = +100°C – – 1.5 V ON Characteristics (Note 2) Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1.3A Base–Emitter Saturation Voltage DC Current Gain VBE(sat) IC = 10A, IB = 1.3A hFE IC = 15A, VCE = 5V 5 – – Cob VCB = 10V, IE = 0, ftest = 1kHz – – 400 pF IC = 10A, VCC = 250V, IB1 = 1.3A, PW = 30νs, Duty Cycle ≤ 2% – 20 – ns – 200 – ns – 1200 – ns – 200 – ns – 650 – ns – 80 – ns – 800 1800 ns – 50 200 ns – 90 250 ns – 1050 – ns Dynamic Characteristics Output Capacitance Switching Characteristics Resistive Load (Table 1) Delay Time td Rise Time tr Storage Time ts Fall Time tf Storage Time ts Fall Time tf IB2 = 2.6A, RB = 1.6Ω Ω VBE(off) = 5V Inductive Load (Table 2) Storage Time tsv Fall Time tfi Crossover Time tc Storage Time tsv Fall Time tfi – 70 – ns Crossover Time tc – 120 – ns IC = 10A, IB1 = 1.3A, VBE(off) = 5V, VCE(pk) = 400V Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. TC = +100°C TC = +150°C .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case