Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 General Description Features The AP2213 is a 500mA output current fixed voltage regulator which provides low noise, very low dropout voltage (typically 350mV at 500mA), very low standby current (1µA maximum) and excellent power supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets and PDAs and in noise sensitive applications, such as RF electronics. · · · Up to 500mA Output Current Low Standby Current Low Dropout Voltage: VDROP=350mV at 500mA · · High Output Accuracy: ±1% Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100µA · · · · · · Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reversed-battery Protection Logic-controlled Enable The AP2213 features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. Applications The AP2213 has 2.5V, 3.0V and 3.3V versions. · · · · The AP2213 is available in TO-252-2 (1) and SOIC-8 packages. Laptop, Notebook, and Palmtop Computer CD-ROM, CD-R/RW, DVD Driver Portable Electronic PC Peripheral SOIC-8 TO-252-2 (1) Figure 1. Package Types of AP2213 Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Pin Configuration D Package M Package (SOIC-8) (TO-252-2 (1)) 3 VOUT 2 GND 1 VIN EN 1 8 GND VIN 2 7 GND VOUT 3 6 GND BYP 4 5 GND Figure 2. Pin Configuration of AP2213 (Top View) Pin Description Pin Number Pin Name Function TO-252-2 (1) SOIC-8 3 3 VOUT Regulated output voltage 2 5, 6, 7, 8 GND Ground 1 2 VIN Input Voltage 1 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown 4 BYP Bypass capacitor for low noise operation Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Functional Block Diagram VIN BYP 3 (3) 1 (2) VOUT (4) + EN Bandgap Ref. A (B) A for TO-252-2 (1) B for SOIC-8 (1) Current Limit Thermal Shutdown 2 (5, 6, 7, 8) GND Figure 3. Functional Block Diagram of AP2213 Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Ordering Information AP2213 E1: Lead Free Circuit Type TR: Tape and Reel Blank: Tube Package D: TO-252-2 (1) M: SOIC-8 Package Temperature Range 2.5: Fixed Output 2.5V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V Part Number AP2213D-2.5E1 TO-252-2 (1) SOIC-8 -40 to 125oC -40 to 125oC Marking ID Packing Type AP2213D-2.5E1 Tube AP2213D-2.5TRE1 AP2213D-2.5E1 Tape & Reel AP2213D-3.0E1 AP2213D-3.0E1 Tube AP2213D-3.0TRE1 AP2213D-3.0E1 Tape & Reel AP2213D-3.3E1 AP2213D-3.3E1 Tube AP2213D-3.3TRE1 AP2213D-3.3E1 Tape & Reel AP2213M-2.5E1 2213M-2.5E1 Tube AP2213M-2.5TRE1 2213M-2.5E1 Tape & Reel AP2213M-3.0E1 2213M-3.0E1 Tube AP2213M-3.0TRE1 2213M-3.0E1 Tape & Reel AP2213M-3.3E1 2213M-3.3E1 Tube AP2213M-3.3TRE1 2213M-3.3E1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Input Voltage VIN 20 V Enable Input Voltage VEN 20 V PD Internally Limited (Thermal Protection) W TLEAD 260 o Junction Temperature TJ 150 oC Storage Temperature TSTG -65 to 150 oC ESD (Machine Model) ESD 300 V Thermal Resistance (No Heatsink) θJA Power Dissipation Lead Temperature (Soldering, 10sec) C TO-252-2 (1) 90 SOIC-8 160 oC/W Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Input Voltage VIN 2.5 18 V Enable Input Voltage VEN 0 18 V TJ -40 125 oC Operating Junction Temperature Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics AP2213-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Symbol ∆VOUT/VOUT Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 % ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 48 ppm/oC VRLINE 1.5 VIN=3.5V to 13.2V 4.5 12 Load Regulation (Note 4) Unit VRLOAD IOUT=0.1mA to 500mA 1 7 17 15 IOUT=100µA mV mV 50 70 110 IOUT=50mA 150 230 140 IOUT=100mA Dropout Voltage (Note 5) 250 300 VDROP 165 IOUT=150mA mV 275 350 250 IOUT=300mA 400 500 350 IOUT=500mA 600 700 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) 1 µA 5 VEN≥2.0V, IOUT=100µA 100 VEN≥2.0V, IOUT=50mA 350 150 180 µA 600 800 Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=150mA 1.3 1.9 2.5 VEN≥2.0V, IOUT=300mA 4 VEN≥2.0V, IOUT=500mA 11 10 mA 15 20 28 Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-2.5 Electrical Characteristics VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 700 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Enable Input Logic-low Voltage VIL Regulator shutdown Enable Input Logic-high Voltage VIH Enable Input Logic-low Current IIL Enable Input Logic-high Current Max Unit dB 1000 mA nV / Hz 0.4 V 0.18 IIH Regulator enabled VIL≤0.4V 2.0 V 0.01 VIL≤0.18V VIL≥2.0V µA 2 5 VIL≥2.0V 1 20 µA 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Symbol ∆VOUT/VOUT Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 % ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 40 ppm/oC VRLINE 1.5 VIN=4V to 13.2V 4.5 12 Load Regulation (Note 4) Unit VRLOAD IOUT=0.1mA to 500mA 1 8 17 15 IOUT=100µA mV mV 50 70 110 IOUT=50mA 150 230 140 IOUT=100mA Dropout Voltage (Note 5) 250 300 VDROP 165 IOUT=150mA mV 275 350 250 IOUT=300mA 400 500 350 IOUT=500mA 600 700 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=100µA 1 100 150 180 VEN≥2.0V, IOUT=50mA µA 5 350 µA 600 800 Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=150mA 1.3 1.9 2.5 VEN≥2.0V, IOUT=300mA 4 10 mA 15 VEN≥2.0V, IOUT=500mA 11 20 28 Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.0 Electrical Characteristics VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 700 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Enable Input Logic-low Voltage VIL Regulator shutdown Enable Input Logic-high Voltage VIH Enable Input Logic-low Current IIL Enable Input Logic-high Current Max Unit dB 1000 mA nV / Hz 0.4 V 0.18 IIH Regulator enabled VIL≤0.4V 2.0 V 0.01 VIL≤0.18V VIL≥2.0V VIL≥2.0V 1 µA 2 5 20 µA 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Symbol ∆VOUT/VOUT Conditions Variation from specified VOUT Min Typ Max -1 1 -2 2 % ∆VOUT/∆T 120 µV/oC (∆VOUT/VOUT)/∆T 36.3 ppm/oC VRLINE 1.5 VIN=4.3V to 13.2V 4.5 12 Load Regulation (Note 4) Unit VRLOAD IOUT=0.1mA to 500mA 1 9 18 15 IOUT=100µA mV mV 50 70 110 IOUT=50mA 150 230 140 IOUT=100mA Dropout Voltage (Note 5) 250 300 VDROP 165 IOUT=150mA mV 275 350 250 IOUT=300mA 400 500 350 IOUT=500mA 600 700 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 VEN≤0.18V (shutdown) VEN≥2.0V, IOUT=100µA 1 100 150 180 VEN≥2.0V, IOUT=50mA µA 5 350 µA 600 800 Ground Pin Current (Note 6) IGND VEN≥2.0V, IOUT=150mA 1.3 1.9 2.5 VEN≥2.0V, IOUT=300mA 4 10 mA 15 VEN≥2.0V, IOUT=500mA 11 20 28 Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 10 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Electrical Characteristics (Continued) AP2213-3.3 Electrical Characteristics VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Ripple Rejection PSRR f=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT=0V 700 Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Enable Input Logic-low Voltage VIL Regulator shutdown Enable Input Logic-high Voltage VIH Enable Input Logic-low Current IIL Enable Input Logic-high Current Max Unit dB 1000 mA nV / Hz 0.4 V 0.18 IIH Regulator enabled VIL≤0.4V 2.0 V 0.01 VIL≤0.18V VIL≥2.0V VIL≥2.0V 1 µA 2 5 20 µA 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 11 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics 850 2.502 800 Output Voltage (V) 2.498 IOUT=50mA 750 700 IOUT=100mA CIN=1µF, COUT=2.2µF 650 IOUT=150mA 600 IOUT=300mA 550 IOUT=500mA Dropout Voltage (mV) 2.500 AP2213-2.5 VIN=3.5V, IOUT=10mA 2.496 2.494 2.492 2.490 500 CIN=1µF, COUT=2.2µF 450 400 350 300 250 2.488 200 150 2.486 2.484 -60 100 -40 -20 0 20 40 60 80 100 120 50 -60 140 -40 -20 20 40 60 80 100 120 140 Junction Temperature ( C) Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature 20 10 9 18 o TA=25 C CIN=1µF, COUT=2.2µF 8 Ground Pin Current (mA) Ground Pin Current (mA) 0 o o Junction Temperature ( C) 7 6 5 4 3 IOUT=300mA IOUT=500mA 10 8 6 2 200 300 400 0 -60 500 IOUT=150mA 12 1 100 IOUT=100mA 14 4 0 IOUT=50mA 16 2 0 AP2213-2.5 VIN=3.5V, CIN=1µF, COUT=2.2µF -40 -20 0 20 40 60 80 100 120 140 0 Junction Temperature ( C) Output Current (mA) Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 12 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 1.8 13 12 AP2213-2.5, VIN=3.5V 1.7 CIN=1µF, COUT=2.2µF, IOUT=100µA 1.6 AP2213-2.5 CIN=1µF, COUT=2.2µF 1.5 IOUT=100µA, VIN=3.5V VEN=1.8V 10 VEN=2V 9 VEN=3V 8 VEN=3.7V Enable Voltage (V) Enable Current (µA) 11 7 6 5 1.4 1.3 1.2 1.1 1.0 VEN=logic high 0.9 VEN=logic low 0.8 4 0.7 3 0.6 2 -60 -40 -20 0 20 40 60 80 100 120 0.5 -60 140 -40 -20 0 20 60 80 100 120 140 Junction Temperature ( C) Figure 9. Enable Voltage vs. Junction Temperature Figure 8. Enable Current vs. Junction Temperature 100 200 AP2213-2.5 IOUT=10mA, CIN=1µF, COUT=2.2µF IOUT=10mA CIN=1µF, COUT=2.2µF Output Noise ( µV/ Hz) 10 Noise Measurement Filter: DIN Noise 150 Noise (µVrms) 40 o o Junction Temperature ( C) 100 VIN=3.5V, CBYP=100pF 1 0.1 0.01 50 0.001 0 10 100 1000 0.0001 10 10000 100 1k 10k 100k 1M 10M Frequency (Hz) Bypass Capacitor (pF) Figure 10. Noise vs. Bypass Capacitor Figure 11. Output Noise vs. Frequency Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 13 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 5.5 VIN (1V/Div) AP2213-2.5 0.5 0 10mA ∆VOUT (10mV/Div) -0.5 ∆VOUT (10mV/Div) IOUT (0.5A/Div) 1 0 -10 -20 AP2213-2.5 4.5 3.5 2.5 10 0 -10 -20 -30 Time (200µs/Div) Time (200µs/Div) Figure 13. Line Transient (Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100µA, CBYP=100pF, COUT=2.2µF) Figure 12. Load Transient (Conditions: VIN=3.5V, CBYP=100pF, VEN=2V, IOUT=10 to 500mA, CIN=1µF, COUT=2.2µF) 3 100 VOUT (1V/Div) AP2213-2.5 VIN=3.5V, VRIPPLE=1VPP 90 2 80 1 IOUT=10mA, COUT=2.2µF 70 0 PSRR (dB) VEN (1V/Div) AP2213-2.5 60 50 40 2 30 1 20 0 10 0 10 -1 100 1k 10k 100k 1M Frequency (Hz) Time (40µs/Div) Figure 15. PSRR vs. Frequency Figure 14. VEN vs. VOUT (Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA, CBYP=open, CIN=1µF, COUT=2.2µF) Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 14 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 1.4 1.4 TO-252-2(1) Package No Heatsink SOIC-8 Package No Heatsink 1.2 Power Dissipation (W) Power Dissipation (W) 1.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.4 0.2 0.2 0.0 25 50 75 100 125 0.0 25 150 50 75 100 150 Ambient Temperature ( C) Figure 16. Power Dissipation vs. Ambient Temperature Figure 17. Power Dissipation vs. Ambient Temperature 1000 1000 COUT=2.2µF COUT=1µF No Bypass Capacitor 100 10 Stable Area 1 No Bypass Capacitor 100 ESR (Ω) ESR (Ω) 125 o o Ambient Temperature ( C) 10 Stable Area 1 0.1 0.1 0.01 0.01 0 50 100 150 200 250 300 350 400 450 0 500 50 100 150 200 250 300 350 400 450 500 Output Current (mA) Output Current (mA) Figure 18. ESR vs. Output Current Figure 19. ESR vs. Output Current Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 15 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Performance Characteristics (Continued) 1000 COUT=4.7µF No Bypass Capacitor ESR (Ω) 100 10 Stable Area 1 0.1 0.01 0 50 100 150 200 250 300 350 400 450 500 Output Current (mA) Figure 20. ESR vs. Output Current Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 16 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Typical Application VIN=3.5V VIN AP2213-2.5 VIN VOUT VOUT=2.5V VOUT EN CIN GND BYP 1µF COUT 2.2µF CBYP 100pF Figure 21. Typical Application of AP2213 (Note 7) Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.35V is the minimum input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage is VOUT+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(VOUT+1V) to 18V. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 17 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Application Information To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: TJ = PD*θJA + TA PD=(VIN-VOUT)*IOUT+VIN*IGND Input Capacitor A 1µF minimum capacitor is recommended to be placed between VIN and GND. Output Capacitor It is required to prevent oscillation. 1µF minimum is recommended when CBYP is unused. 2.2µF minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient response. Where: TJ≤TJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be ignored due to its small value. TJ(max) is 150oC, θJA is 90oC/W for TO-252-2 (1) package and 160oC/W for SOIC-8 package. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. Example: For 2.5V version packaged in SOIC-8, IOUT=500mA, TA=50oC, VIN(Max) is: (150oC-50oC)/(0.5A*160oC/W)+2.5V=3.75V The start-up speed of the AP2213 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. Therefore, for good performance, please make sure that input voltage is less than 3.75V without heatsink when TA=50oC. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown. Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 18 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Mechanical Dimensions 1.350(0.053) 1.650(0.065) TO-252-2(1) 6.350(0.250) 6.650(0.262) 5.200(0.205) 5.400(0.213) Unit: mm(inch) 2.200(0.087) 2.400(0.094) 0.430(0.017) 0.580(0.023) 4.300(0.169) 5.400(0.212) 5° 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028) 2.300TYP 4.500(0.177) 4.700(0.165) 1.400(0.055) 1.780(0.070) 5° 3° 4° 0.430(0.017) 0.580(0.023) Mar. 2007 Rev. 1. 2 4.800(0.189) 6.500(0.256) 3.800REF(0.150REF) 5.400(0.213) 5.700(0.224) 0.000(0.000) 0.127(0.005) 2.550(0.100) 2.900(0.114) 0.600(0.024) 0.900(0.035) 9.500(0.374) 9.900(0.390) 8° BCD Semiconductor Manufacturing Limited 19 Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 φ 0.800(0.031) 0.300(0.012) R0.150(0.006) 0.100(0.004) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.190(0.007) 0.250(0.010) 1° 5° 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 20 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788