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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FAN7371 High-Current High-Side Gate Drive IC Features Description ! Floating Channel for Bootstrap Operation to +600V The FAN7371 is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. ! 4A/4A Sourcing/Sinking Current Driving Capability ! Common-Mode dv/dt Noise Canceling Circuit ! 3.3V and 5V Input Logic Compatible ! Output In-phase with Input Signal ! 8-Lead Small Outline Package (SOP) Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. Applications The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. ! Under- Voltage Lockout for VBS ! 25V Shunt Regulator on VDD and VBS ! High-Speed Gate Driver ! Sustaine Switch Driver in PDP Application ! Energy-Recovery Circuit Switch Driver in PDP Application ! High-Power Buck Converter The high-current and low-output voltage drop feature makes this device suitable for sustaine switch driver and energy recovery switch driver in the Plasma Display Panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications. ! Motor Drive Inverter 8-SOP Ordering Information Part Number FAN7371M(1) FAN7371MX(1) Package Operating Temperature Range 8-SOP -40°C ~ 125°C Eco Status RoHS Packing Method Tube Tape & Reel Note: 1. These devices passed wave soldering test by JESD22A-111. For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC November 2009 15V DBOOT3 VS 15V FAN7371 RBOOT1 DBOOT1 8 VB Q3 1 VDD 2 IN 4 GND VB 8 HO 7 VS 6 NC 5 NC 3 5 NC 2 IN3 8 IN HO 7 3 NC VS 6 NC 5 GND 4 D4 To Pannel R2 Q1 VB 2 IN VS R1 FAN7371 8 VB Q2 R5 IN2 HO 6 D2 D1 FAN7371 VDD 7 L1 DBOOT2 1 VDD 1 CBOOT3 R4 CBOOT1 3 NC R3 D3 FAN7371 IN1 RBOOT3 Q4 VDD 1 R7 7 HO 6 VS 5 NC IN 2 IN4 CBOOT2 C1 R6 NC 3 C3 R8 4 GND GND 4 C2 Energy Recovery Circuit Part Sustain Drive Part FAN7371 Rev.03 Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application VIN 15V RBOOT DBOOT FAN7371 1 VDD VB 8 R1 2 IN PWM HO 7 CBOOT C1 3 NC 4 GND L1 R2 VS 6 NC 5 D1 C2 VOUT FAN7371 Rev.01 Figure 2. Step-Down (Buck) DC-DC Converter Application © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 2 FAN7371 — High-Current High-Side Gate Drive IC Typical Application Diagrams 1 VDD 25V UVLO 4 GND PULSE GENERATOR 2 IN 110K NOISE CANCELLER R R S Q Shoot-through current compensated gate driver VDD 8 VB 7 HO 6 VS 25V Pins 3 and 5 are no connection. FAN7371 Rev.04 Figure 3. Functional Block Diagram Pin Configuration VDD 1 IN 2 8 VB 7 HO FAN7371 NC 3 6 VS GND 4 5 NC FAN7371 Rev.01 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name 1 VDD 2 IN Description Supply Voltage Logic Input for High-Side Gate Driver Output 3 NC 4 GND No Connection 5 NC No Connection 6 VS High-Voltage Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply Ground © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 3 FAN7371 — High-Current High-Side Gate Drive IC Internal Block Diagram Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Symbol Characteristics VS High-Side Floating Offset Voltage VB High-Side Floating Supply Voltage(2) VHO VDD VIN High-Side Floating Output Voltage Low-Side and Logic Supply Voltage (2) Max. Unit VB-VSHUNT VB+0.3 V -0.3 625.0 V VS-0.3 VB+0.3 V -0.3 VSHUNT V -0.3 VDD+0.3 V Allowable Offset Voltage Slew Rate ± 50 V/ns PD Power Dissipation(3, 4, 5) 0.625 W θJA Thermal Resistance 200 °C/W TJ Junction Temperature -55 +150 °C TSTG Storage Temperature -55 +150 °C Operating Ambient Temperature -40 +125 °C dVS/dt TA Logic Input Voltage Min. Notes: 2 3 4 5 This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VBS High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage 6-VDD 600 V VS VB V GND VDD V 10 20 V VHO High-Side Output Voltage VIN Logic Input Voltage VDD Supply Voltage © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 4 FAN7371 — High-Current High-Side Gate Drive IC Absolute Maximum Ratings VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics Test Condition POWER SUPPLY SECTION IQDD Quiescent VDD Supply Current IPDD Operating VDD Supply Current Min. Typ. Max. Unit VIN=0V or 5V 25 70 μA fIN=20KHz, No Load 35 100 μA BOOTSTRAPPED SUPPLY SECTION VBS Supply Under-Voltage Positive Going Threshold Voltage VBS Supply Under-Voltage Negative Going VBSUVThreshold Voltage VBS Supply Under-Voltage Lockout VBSHYS Hysteresis Voltage ILK Offset Supply Leakage Current VBSUV+ IQBS IPBS VBS=Sweep 8.2 9.2 10.2 V VBS=Sweep 7.5 8.5 9.5 V VBS=Sweep 0.7 VB=VS=600V V 10 μA Quiescent VBS Supply Current VIN=0V or 5V 60 120 μA Operating VBS Supply Current CLOAD=1nF, fIN=20KHz, rms Value 1.0 2.8 mA SHUNT REGULATOR SECTION V and VBS Shunt Regulator Clamping VSHUNT DD Voltage INPUT LOGIC SECTION VIH Logic “1” Input Voltage ISHUNT=5mA 25 V 2.5 VIL Logic “0” Input Voltage IIN+ Logic Input High Bias Current VIN=5V IIN- Logic Input Low Bias Current VIN=0V RIN Input Pull-down Resistance GATE DRIVER OUTPUT SECTION VOH High Level Output Voltage (VBIAS - VO) 24 V 45 70 0.8 V 70 μA 2 μA 110 KΩ No Load 1.2 V 30 mV VOL Low Level Output Voltage No Load IO+ Output High, Short-Circuit Pulsed Current(6) VHO=0V, VIN=5V, PW ≤10µs 3.0 4.0 A IO- Current(6) VHO=15V,VIN=0V, PW ≤10µs 3.0 4.0 A VS Output Low, Short-Circuit Pulsed Allowable Negative VS pin Voltage for IN Signal Propagation to HO -9.8 -7.0 V Note: 6 These parameters guaranteed by design. Dynamic Electrical Characteristics VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit ton Turn-on Propagation Delay Time VS=0V 150 210 ns toff Turn-off Propagation Delay Time VS=0V 150 210 ns tr Turn-on Rise Time 25 50 ns tf Turn-off Fall Time 15 40 ns . © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 5 FAN7371 — High-Current High-Side Gate Drive IC Electrical Characteristics 250 200 200 tOFF [ns] tON [ns] 250 150 100 150 100 50 50 0 -40 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 50 50 40 40 30 20 10 10 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 80 100 120 20 40 60 80 100 120 Temperature [°C] Figure 7. Turn-on Rise Time vs. Temperature Figure 8. Turn-off Fall Time vs. Temperature 2.0 100 80 1.5 IPBS [mA] IPDD [μA] 60 30 20 -20 40 Figure 6. Turn-off Propagation Delay vs. Temperature tF [ns] tR [ns] Figure 5. Turn-on Propagation Delay vs. Temperature 0 -40 20 Temperature [°C] 60 1.0 40 0.5 20 0 -40 -20 0 20 40 60 80 100 0.0 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 9. Operating VDD Supply Current Figure 10. Operating VBS Supply Current vs. Temperature vs. Temperature © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 6 FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics 9.5 9.5 9.0 VBSUV- [V] VBSUV+ [V] 10.0 9.0 8.0 8.5 8.0 -40 8.5 -20 0 20 40 60 80 100 7.5 -40 120 -20 0 Temperature [°C] 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.0 0.5 0.5 0 20 40 60 60 80 100 120 1.5 1.0 -20 40 Figure 12. VBS UVLO- vs. Temperature VIL [V] VIH [V] Figure 11. VBS UVLO+ vs. Temperature 0.0 -40 20 Temperature [°C] 80 100 0.0 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 13. Logic High Input Voltage vs. Temperature Figure 14. Logic Low Input Voltage vs. Temperature 280 1.50 240 1.25 VOH [V] RIN [kΩ] 200 160 120 1.00 0.75 80 0.50 40 0.25 0 -40 -20 0 20 40 60 80 100 0.00 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 15. Input Pull-Down Resistance vs.Temperature. Figure 16. High-Level Output Voltage vs. Temperature © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 -20 www.fairchildsemi.com 7 FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) 6.5 6.0 6.0 5.5 5.5 5.0 5.0 IO- [A] IO+ [A] 6.5 4.5 4.5 4.0 4.0 3.5 3.5 3.0 3.0 2.5 -40 -20 0 20 40 60 80 100 2.5 -40 120 -20 0 Temperature [°C] 7 7 6 6 5 5 4 4 3 3 12 14 16 40 60 80 100 120 Figure 18. Output Low, Short-Circuit Pulsed Current vs. Temperature IO- [A] IO+ [A] Figure 17. Output High, Short-Circuit Pulsed Current vs. Temperature 2 10 20 Temperature [°C] 18 2 10 20 12 14 VBS [V] 16 18 20 VBS [V] Figure 19. Output High, Short-Circuit Pulsed Current vs. Supply Voltage Figure 20. Output Low, Short-Circuit Pulsed Current vs. Supply Voltage 80 120 100 -40°C 80 -40°C IQBS [μA] IQDD [μA] 60 40 25°C 25°C 60 125°C 40 125°C 20 20 0 10 12 14 16 18 0 10 20 Supply Voltage [V] 14 16 18 20 Supply Voltage [V] Figure 21. Quiescent VDD Supply Current vs. Supply Voltage Figure 22. Quiescent VBS Supply Current vs. Supply Voltage © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 12 www.fairchildsemi.com 8 FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) Timing Diagram 15V 50% VDD 10nF VB 10µF 10µF 0.1µF 50% IN 15V VS GND ton tr toff tf FAN7371 1000pF 90% 90% HO IN OUT (A) 10% 10% (B) Figure 23. Switching Time Test Circuit and Waveform Definitions © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 9 FAN7371 — High-Current High-Side Gate Drive IC Switching Time Definitions 5.00 4.80 A 0.65 3.81 5 8 B 6.20 5.80 PIN ONE INDICATOR 1.75 4.00 3.80 1 5.60 4 1.27 (0.33) 0.25 M 1.27 C B A LAND PATTERN RECOMMENDATION SEE DETAIL A 0.25 0.10 1.75 MAX R0.10 0.25 0.19 C 0.10 0.51 0.33 0.50 x 45° 0.25 C OPTION A - BEVEL EDGE GAGE PLANE R0.10 0.36 OPTION B - NO BEVEL EDGE NOTES: UNLESS OTHERWISE SPECIFIED 8° 0° 0.90 0.406 SEATING PLANE (1.04) DETAIL A SCALE: 2:1 A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M. E) DRAWING FILENAME: M08AREV13 Figure 24. 8-Lead Small Outline Package (SOP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 10 FAN7371 — High-Current High-Side Gate Drive IC Physical Dimensions FAN7371 — High-Current High-Side Gate Drive IC © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com 12 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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