ER800F – ER806F WTE POWER SEMICONDUCTORS 8.0A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Super-Fast Switching for High Efficiency High Current Capability C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O D B Mechanical Data ! ! ! ! ! ! A PIN1 2 F Case: ITO-220A Full Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number ITO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm E P I L H PIN 1+ J PIN 2 - K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current ER 800F ER 801F ER 801AF ER 802F ER 803F ER 804F ER 806F Unit VRRM VRWM VR 50 100 150 200 300 400 600 V VR(RMS) 35 70 105 140 210 280 420 V IO 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 125 A Forward Voltage @IF = 8.0A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage @TC = 105°C Symbol 0.95 1.3 1.7 10 400 V µA Reverse Recovery Time (Note 1) trr 35 50 nS Typical Junction Capacitance (Note 2) Cj 70 50 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. ER800F – ER806F 1 of 3 © 2002 Won-Top Electronics IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 10 8 6 4 2 0 0 50 100 100 800F - 802F 806F 1.0 Pulse width = 300µs 2% duty cycle 0.1 150 0.2 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.6 1.0 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 180 400 8.3 ms single half-sine-wave JEDEC method 150 800F - 802F Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 803F - 804F 10 120 90 60 100 803F - 806F 30 10 0 1 10 0.1 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current ER800F – ER806F 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 2 of 3 © 2002 Won-Top Electronics ORDERING INFORMATION Product No. Package Type Shipping Quantity ER800F ITO-220A 50 Units/Tube ER801F ITO-220A 50 Units/Tube ER801AF ITO-220A 50 Units/Tube ER802F ITO-220A 50 Units/Tube ER803F ITO-220A 50 Units/Tube ER804F ITO-220A 50 Units/Tube ER806F ITO-220A 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: [email protected] Internet: http://www.wontop.com ER800F – ER806F We power your everyday. 3 of 3 © 2002 Won-Top Electronics