LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB114TLT1G S-LDTB114TLT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. • • 3 1 2 SOT-23 We declare that the material of product compliance with RoHS requirements. S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −40 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C Parameter 1 BASE 3 COLLECTOR R1 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB114TLT1G S-LDTB114TLT1G LDTB114TLT3G S-LDTB114TLT3G K3 10 3000/Tape & Reel K3 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA Collector cutoff current ICBO − − −0.5 µA VCB= −50V Emitter cutoff curren IEBO − − −0.5 µA VEB= −4V VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA DC current transfer ratio hFE 100 250 600 − IC= −50mA , VCE= −5V Input resistance R1 7 10 13 kΩ Transition frequency fT ∗ − 200 − MHz Collector-emitter saturation voltage Conditions − VCE= −10V , IE=50mA , f=100MHz ∗ Characteristics of built-in transistor Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTB114TLT1G ;S-LDTB114TLT1G 1k VCE=5V Ta=25°C DC CURRENT GAIN : hFE 500 Ta=100°C 200 Ta= −40°C 100 50 20 10 5 2 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1 IC/IB=20/1 500m 200m Ta=100°C Ta=25°C 100m 50m Ta= −40°C 20m 10m 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. Collector current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTB114TLT1G ;S-LDTB114TLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3