IRF AUIRGP4063D-E Insulated gate bipolar transistor with ultrafast soft recovery diode Datasheet

AUIRGP4063D
AUIRGP4063D-E
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
•
•
•
•
•
•
•
•
•
•
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
IC = 60A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
G
VCE(on) typ. = 1.6V
E
n-channel
C
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
Base part number
Package Type
AUIRGP4063D
AUIRGP4063D-E
TO-247
TO-247
GC
E
E
GC
TO-247AD
AUIRGP4063D-E
TO-247AC
AUIRGP4063D
G
Gate
C
Collector
Standard Pack
Form
Quantity
Tube
25
Tube
25
E
Emitter
Orderable Part Number
AUIRGP4063D
AUIRGP4063D-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V
V CES
Collector-to-Emitter Voltage
600
IC @ TC = 25°C
Continuous Collector Current
100
IC @ TC = 100°C
ICM
Continuous Collector Current
60
Pulse Collector Current, VGE = 15V
144
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
c
192
IFM
Diode Continous Forward Current
Diode Maximum Forward Current
e
192
V GE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
50
PD @ TC = 25°C
Maximum Power Dissipation
330
PD @ TC = 100°C
Maximum Power Dissipation
170
TJ
Operating Junction and
TST G
Storage Temperature Range
1
A
82
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
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July 12, 2013
AUIRGP4063D/E
Thermal Resistance
Min.
Typ.
Max.
Units
R JC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Parameter
–––
–––
0.45
°C/W
R JC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
0.92
R CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
R JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
80
–––
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
 V(B R )CES / T J T emperature Coeff. of B reakdown Voltage
VCE(on)
Min.
Typ.
Collector-to-E mitter B reakdown Voltage 600
Collector-to-Emitter Saturation Voltage
—
Max. Units
—
—
0.30
—
—
1.6
1.9
—
1.9
—
—
2.0
—
V
Conditions
VGE = 0V, IC = 150μA
CT 6
IC = 48A, VGE = 15V, T J = 25°C
V
5,6 ,7
IC = 48A, VGE = 15V, T J = 150°C
9,10,11
IC = 48A, VGE = 15V, T J = 175°C
VGE(th)
Gate Threshold Voltage
4.0
—
6.5
Threshold Voltage temp. coefficient
—
-21
—
gfe
Forward Transconductance
—
32
—
S
VCE = 50V, IC = 48A, PW = 80μs
ICES
Collector-to-Emitter Leakage Current
—
1.0
150
μA
VGE = 0V, VCE = 600V
—
450
1000
VFM
Diode Forward Voltage Drop
—
1.95
2.91
V
IF = 48A
—
1.45
—
—
—
±100
Gate-to-Emitter Leakage Current
CT 6
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
 VGE(t h) / T J
IGES
R ef .F i g
f
V
VCE = VGE , IC = 1.4mA
9 , 10,
mV/°C VCE = VGE , IC = 1.0mA (25°C - 175°C)
11, 12
VGE = 0V, VCE = 600V, T J = 175°C
8
IF = 48A, T J = 175°C
nA
VGE = ±20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
95
Max. Units
140
Q ge
Gate-to-Emitter Charge (turn-on)
—
28
42
Q gc
Gate-to-Collector Charge (turn-on)
—
35
53
nC
Conditions
R ef .F i g
IC = 48A
24
VGE = 15V
CT 1
VCC = 400V
Eon
Turn-On Switching Loss
—
625
1141
Eoff
Turn-Off Switching Loss
—
1275
1481
IC = 48A, VCC = 400V, VGE = 15V
Etotal
Total Switching Loss
—
1900
2622
td(on)
Turn-On delay time
—
60
78
tr
Rise time
—
40
56
td(off)
Turn-Off delay time
—
145
176
tf
Fall time
—
35
46
Eon
Turn-On Switching Loss
—
1625
—
Eoff
Turn-Off Switching Loss
—
1585
—
Etotal
Total Switching Loss
—
3210
—
E nergy los s es include tail & diode revers e recovery
td(on)
Turn-On delay time
—
55
—
IC = 48A, VCC = 400V, VGE = 15V
14 , 16
tr
Rise time
—
45
—
RG = 10 , L = 200μH, LS = 150nH
CT 4
td(off)
Turn-Off delay time
—
165
—
tf
Fall time
—
45
—
Cies
Input Capacitance
—
3025
—
Coes
Output Capacitance
—
245
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
90
—
f = 1.0Mhz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
μJ
CT 4
RG = 10 , L = 200μH, LS = 150nH, T J = 25°C
E nergy los s es include tail & diode revers e recovery
IC = 48A, VCC = 400V, VGE = 15V
ns
CT 4
RG = 10 , L = 200μH, LS = 150nH, T J = 25°C
IC = 48A, VCC = 400V, VGE =15V
μJ
ns
RG=10 , L=200μH, LS =150nH, T J = 175°C
f
T J = 175°C
13 , 15
CT 4
WF 1, W F 2
WF 1
WF 2
pF
VGE = 0V
23
T J = 175°C, IC = 192A
4
VCC = 480V, Vp =600V
CT 2
Rg = 10 , VGE = +15V to 0V
—
—
μs
VCC = 400V, Vp =600V
22 , CT 3
Rg = 10 , VGE = +15V to 0V
WF 4
Erec
Reverse Recovery Energy of the Diode
—
845
—
μJ
T J = 175°C
trr
Diode Reverse Recovery Time
—
115
—
ns
VCC = 400V, IF = 48A
Irr
Peak Reverse Recovery Current
—
40
—
A
VGE = 15V, Rg = 10 , L =200μH, Ls = 150nH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10.
‚ This is only applied to TO-247AC package.
2
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17, 18, 19
20 , 2 1
WF 3
ƒ Pulse width limited by max. junction temperature.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
July 12, 2013
AUIRGP4063D/E
100
400
300
60
Ptot (W)
IC, Collector Current (A)
80
40
200
100
20
0
0
25
50
75
100
125
150
175
25
50
75
100
T C, Case Temperature (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
150
175
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
10μsec
100
IC (A)
100μsec
IC (A)
125
T C (°C)
1msec
10
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
10
100
VCE (V)
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
200
180
180
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
160
100
80
120
100
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
3
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
ICE (A)
140
ICE (A)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
200
160
1000
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0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
July 12, 2013
AUIRGP4063D/E
200
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
180
160
160
140
120
-40°c
25°C
175°C
120
IF (A)
ICE (A)
140
180
100
100
80
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0.0
1.0
2.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
20
18
18
16
16
14
14
ICE = 24A
ICE = 48A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
10
ICE = 96A
8
12
ICE = 24A
ICE = 48A
10
ICE = 96A
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
VGE (V)
18
180
16
160
14
140
ICE = 24A
ICE = 48A
ICE = 96A
8
ICE (A)
VCE (V)
200
10
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
12
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
T J = 25°C
T J = 175°C
120
100
80
6
60
4
40
2
20
0
0
5
10
15
20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
4.0
VF (V)
VCE (V)
12
3.0
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0
5
10
15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
July 12, 2013
AUIRGP4063D/E
6000
1000
5000
Swiching Time (ns)
EOFF
Energy (μJ)
4000
EON
3000
2000
tdOFF
100
tdON
tF
tR
1000
0
10
0
50
100
150
0
20
40
60
80
100
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
5000
1000
4500
tdOFF
EOFF
Swiching Time (ns)
Energy (μJ)
4000
EON
3500
3000
2500
tR
tdON
100
tF
2000
1500
1000
10
0
25
50
75
100
125
0
25
Rg ()
45
100
125
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
45
40
40
RG = 10
35
35
30
RG = 22
25
20
IRR (A)
IRR (A)
75
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
RG = 47
15
RG = 100
10
30
25
20
15
5
0
10
0
20
40
60
80
100
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
5
50
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0
25
50
75
100
125
RG (
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
July 12, 2013
AUIRGP4063D/E
45
4000
40
3500
96A
3000
QRR (μC)
IRR (A)
35
30
25
2500
100
22
47
2000
20
10
48A
24A
1500
15
1000
10
0
200
400
600
800
0
1000
500
1500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
900
800
1000
RG = 10
18
400
16
350
14
300
12
250
10
200
8
150
6
100
700
Energy (μJ)
500
400
RG = 47
300
RG = 100
200
100
50
4
0
0
20
40
60
80
8
100
10
12
16
18
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
10000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
Capacitance (pF)
14
VGE (V)
IF (A)
1000
Coes
100
Cres
10
V CES = 300V
14
V CES = 400V
12
10
8
6
4
2
0
0
20
40
60
80
100
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
Current (A)
Time (μs)
RG = 22
600
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0
25
50
75
100
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
July 12, 2013
AUIRGP4063D/E
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
J
R1
R1
J
1
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
2
1
R3
R3
3
2
C

3
Ri (°C/W) i (sec)
0.0872 0.000114
0.1599 0.001520
0.2020 0.020330
Ci= iRi
Ci iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
J
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
R1
R1
J
1
1
R2
R2
2
R3
R3
3
2
Ci= iRi
Ci iRi
C

3
Ri (°C/W) i (sec)
0.2774 0.000908
0.3896
0.2540
0.003869
0.030195
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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July 12, 2013
AUIRGP4063D/E
L
L
VC C
D UT
0
80 V
DU T
4 80V
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
d io d e clamp /
DU T
4x
DC
L
- 5V
360V
DU T /
D RIVER
DUT
VCC
Rg
Fig.C.T.3 - S.C. SOA Circuit
R=
Fig.C.T.4 - Switching Loss Circuit
VCC
ICM
C force
400μH
D1
10K
C sense
DUT
VCC
G force
DUT
0.0075μ
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
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Fig.C.T.6 - BVCES Filter Circuit
July 12, 2013
AUIRGP4063D/E
700
140
600
120
600
120
500
100
500
100
80
tf
300
60
90% ICE
20
5% ICE
0
0.10
0.60
300
40
10% test
100
0
0
EON
-20
1.10
-100
6.20
6.40
6.60
6.80
-20
7.00
Time (μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
600
60
50
600
500
500
40
QRR
30
VCE (V)
10
0
-10
10%
Peak
IRR
Peak
IRR
-20
ICE
VCE
400
tRR
20
IRR (A)
20
5% VCE
Time(μs)
400
300
300
200
200
100
100
0
-30
-40
-0.15
-0.05
0.05
0.15
0.25
time (μS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
9
60
90% test
200
0
EOFF Loss
-100
-0.40
TEST
CURRE
40
5% VCE
100
80
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ICE (A)
200
VCE (V)
VCE (V)
400
tr
400
0
-100
-5.00
0.00
5.00
-100
10.00
time (μS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
July 12, 2013
AUIRGP4063D/E
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUGP4063D
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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July 12, 2013
AUIRGP4063D/E
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Part Number
AU4063D-E
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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July 12, 2013
AUIRGP4063D/E
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
TO-247AC
N/A
TO-247AD
N/A
Machine Model
Class M4 (±425V)
(per AEC-Q101-002)
Human Body Model
Class H2 (±4000V)
(per AEC-Q101-001)
Charged Device Model
Class C5 (±1125V)
(per AEC-Q101-005)
ESD
RoHS Compliant
††
††
††
Yes
† Qualification standards can be found at International Rectifier’s web site:
†† Highest passing voltage.
12
†
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http://www.irf.com
July 12, 2013
AUIRGP4063D/E
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Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements
different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties
for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for
any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR
products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as
military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has
not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all
legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not
be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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www.irf.com © 2013 International Rectifier
July 12, 2013
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