APT50GT120B2RDL(G)
1200V
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode IGBT®
The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
Typical Applications
Features
• Low Conduction Loss
• SSOA Rated
Induction Heating
• Low Gate Charge
• RoHS Compliant
Welding
C
• Ultrafast Tail Current shutoff
Medical
• Low forward Diode Voltage (VF)
High Power Telecom
• Ultrasoft Recovery Diode
Resonant Mode Phase Shifted
Bridge
Parameter
APT50GT120B2RDL(G)
VCES
Collector-Emitter Voltage
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
E
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
G
1200
UNIT
Volts
±30
1
8
@ TC = 25°C
106
50
Amps
150
@ TC = 150°C
150A @ 1200V
Switching Safe Operating Area @ TJ = 150°C
Watts
694
Total Power Dissipation
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
MAX
4.5
5.5
6.5
2.7
3.2
3.7
Units
1200
(VCE = VGE, I C = 2mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
4.0
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
300
2
300
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
μA
1500
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Volts
nA
Ω
6-2009
V(BR)CES
MIN
Rev B
Characteristic / Test Conditions
052-6350
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50GT120B2RDL(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
3
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
td(on)
tr
td(off)
tf
Eon1
250
f = 1 MHz
155
Gate Charge
7.5
VGE = 15V
240
VCE = 600V
20
VGE =
15V, L = 100μH, VCE = 1200V
50
Turn-off Delay Time
VGE = 15V
215
I C = 50A
26
Turn-on Switching Energy
RG = 4.7Ω 7
23
Current Rise Time
VCC = 800V
50
Turn-off Delay Time
VGE = 15V
255
Turn-on Delay Time
I C = 50A
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
μJ
1910
Inductive Switching (125°C)
Eon2
ns
4835
6
Eon1
nC
3585
TJ = +25°C
5
V
A
VCC = 800V
4
UNIT
pF
150
Current Rise Time
Current Fall Time
MAX
110
7,
23
Turn-off Switching Energy
tf
VGE = 0V, VCE = 25V
Inductive Switching (25°C)
Eoff
td(off)
2500
TJ = 150°C, R G = 1.0Ω
Turn-on Delay Time
Turn-on Switching Energy (Diode)
tr
TYP
Capacitance
I C = 50A
Switching Safe Operating Area
Eon2
td(on)
MIN
50
3580
RG = 4.7Ω 7
44
55
ns
TJ = +125°C
μJ
6970
6
2750
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.18
RθJC
Junction to Case (DIODE)
.61
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
052-6350
Rev B
6-2009
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance.
8 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
V
GE
= 15V
TJ= 55°C
100
TJ= 125°C
50
TJ= 150°C
25
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
100
75
TJ= -55°C
TJ= 25°C
TJ= 125°C
0
6
IC = 100A
4
3
IC = 50A
IC = 25A
2
1
0
8
9
10 11 12 13 14 15 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
8V
25
7V
6V
0
10
15
20
25
30
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
I = 50A
C
T = 25°C
VCE = 240V
J
14
VCE = 600V
12
10
VCE = 960V
8
6
4
2
0
7
50
100 150 200 250 300
GATE CHARGE (nC)
FIGURE 4, Gate charge
350
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
6
IC = 100A
5
IC = 50A
4
IC = 25A
3
2
1
0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
100
1.10
1.05
0.90
0.85
0.80
0.75
-.50 -.25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
6-2009
0.95
80
Rev B
1.00
IC, DC COLLECTOR CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
9V
50
0
10
12
14
2
4
6
8
VCE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
5
10V
75
052-6350
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
125
25
11V
100
16
250μs PULSE
TEST<0.5 % DUTY
CYCLE
50
125
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
150
15V
13V
TJ= 25°C
125
75
APT50GT120B2RDL(G)
150
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
150
APT50GT120B2RDL(G)
300
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
35
30
VGE = 15V
25
20
15
10
VCE = 800V
5 TJ = 25°C, or 125°C
RG = 5Ω
L = 100μH
0
200
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
150
100
50 VCE = 800V
RG = 5Ω
L = 100μH
0
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
160
250
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
RG = 5Ω, L = 100μH, VCE = 800V
140
RG = 5Ω, L = 100μH, VCE = 800V
50
tf, FALL TIME (ns)
tr, RISE TIME (ns)
120
100
80
60
40
TJ = 25 or 125°C,VGE = 15V
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
EOFF, TURN OFF ENERGY LOSS (μJ)
EON2, TURN ON ENERGY LOSS (μJ)
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
6000
V
= 800V
CE
V
= +15V
GE
R = 5Ω
G
20,000
TJ = 125°C
10,000
5,000
TJ = 25°C
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
40,000
30,000
20,000
0
Eon2,50A
Eoff,100A
Eoff,50A
0
TJ = 125°C
4000
3000
2000
TJ = 25°C
1000
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
Eon2,25A
Eoff,25A
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)
6-2009
Rev B
052-6350
Eon2,100A
J
10,000
G
5000
25,000
V
= 800V
CE
V
= +15V
GE
T = 125°C
50,000
V
= 800V
CE
V
= +15V
GE
R = 5Ω
0
0
60,000
TJ = 25°C, VGE = 15V
20
0
0
15,000
30
10
20
25,000
TJ = 125°C, VGE = 15V
40
V
= 800V
CE
V
= +15V
GE
R = 5Ω
Eon2,100A
G
20,000
15,000
10,000
Eon2,50A
5,000
Eoff,50A
0
Eon2,25A
Eoff,100A
Eoff,25A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
Cies
P
C, CAPACITANCE ( F)
APT50GT120B2RDL(G)
160
4,000
1,000
500
Coes
140
120
100
80
60
40
20
Cres
100
00
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
D = 0.9
0.16
0.7
0.12
0.5
Note:
0.08
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.20
0.3
t2
0.04
SINGLE PULSE
0.1
0
t1
0.05
10-5
10-4
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
50
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
10
4
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 5Ω
G
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
Rev B
6-2009
10 20
052-6350
FMAX, OPERATING FREQUENCY (kHz)
140
APT50GT120B2RDL(G)
APT30DL120
Gate Voltage
10%
TJ = 125°C
td(on)
IC
V CC
tr
V CE
90%
5%
10%
Collector Current
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
052-6350
Rev B
6-2009
Figure 23, Turn-off Switching Waveforms and Definitions
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
APT50GT120B2RDL(G)
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 145°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
81
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
60
UNIT
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
Forward Voltage
MIN
TYP
MAX
IF = 30A
1.6
2.1
IF = 60A
2.0
IF = 30A, TJ = 125°C
1.6
UNIT
Volts
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C
F
F
R
J
-
61
trr
Reverse Recovery Time
-
592
Qrr
Reverse Recovery Charge
-
2694
-
9
-
389
ns
-
3459
nC
-
15
-
165
ns
-
4646
nC
-
44
Amps
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A, diF/dt = -1000A/μs
Maximum Reverse Recovery Current
VR = 800V, TC = 125°C
-
-
Amps
Amps
0.9
0.8
0.9
0.7
0.7
0.6
0.5
0.5
0.4
0.3
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
IRRM
IF =30A, diF/dt = -200A/μs
nC
0.3
t1
t2
0.2
t
0.1
0.1
SINGLE PULSE
0.05
0
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
1.0
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
10
-4
6-2009
IRRM
VR = 800V, TC = 25°C
Rev B
IRRM
IF = 30A, diF/dt = -200A/μs
ns
052-6350
Symbol
APT50GT120B2RDL(G)
100
500
TJ= 125°C
TJ= 55°C
TJ= 25°C
60
40
20
400
60A
30A
350
15A
R
300
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
7000
T = 125°C
J
V = 800V
R
6000
60A
5000
30A
4000
0
3
15A
3000
2000
1000
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
70
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
trr, COLLECTOR CURRENT (A)
IF, FORWARD CURRENT (A)
80
T = 125°C
J
V = 800V
450
TJ= 150°C
T = 125°C
J
V = 800V
R
60
60A
50
30A
40
15A
30
20
10
0
0
200
400
60
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
100
80
0.8
70
tRR
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
90
1.0
IRRM
0.6
QRR
0.4
60
50
40
30
20
0.2
Duty cycle = 0.5
TJ = 45°C
10
0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
052-6350
CJ, JUNCTION CAPACITANCE (pF)
Rev B
6-2009
1400
1200
1000
800
600
400
200
0
1
10
100
800
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
Vr
diF /dt Adjust
+18V
APT10078BLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
T-MAX® (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
(Anode)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
6-2009
1.01 (.040)
1.40 (.055)
Gate
Collector (Cathode)
Emmiter
Rev B
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
052-6350
(Cathode)
Collector
5.38 (.212)
6.20 (.244)