DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BAS45AL Low-leakage diode Product specification Supersedes data of 1999 May 04 1999 May 28 Philips Semiconductors Product specification Low-leakage diode BAS45AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. • Repetitive peak forward current: max. 625 mA • Low reverse current: max. 1 nA • Switching time: typ. 1.5 µs. k handbook, 4 columns a MAM061 APPLICATION • Low leakage current applications. Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MAX. UNIT − 125 V − 125 V − 250 mA − 625 mA tp = 1 µs − 4 A tp = 1 ms − 1 A VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 note 1; see Fig.2 − 0.5 A − 400 mW storage temperature −65 +175 °C junction temperature − 175 °C tp = 1 s Ptot total power dissipation Tstg Tj Tamb = 25 °C; note 1 Note 1. Device mounted on a FR4 printed-circuit board. 1999 May 28 MIN. 2 Philips Semiconductors Product specification Low-leakage diode BAS45AL ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS TYP. MAX. UNIT see Fig.3 reverse current IF = 1 mA − 780 mV IF = 10 mA − 860 mV IF = 100 mA − 1000 mV VR = 125 V; Emax = 100 lx − 1 nA VR = 30 V; Tj = 125 °C; Emax = 100 lx − 300 nA VR = 125 V; Tj = 125 °C; Emax = 100 lx − 500 nA VR = 125 V; Tj = 150 °C; Emax = 100 lx − 2 µA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 4 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 1.5 − µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on a FR4 printed-circuit board. 1999 May 28 3 VALUE UNIT 300 K/W 375 K/W Philips Semiconductors Product specification Low-leakage diode BAS45AL GRAPHICAL DATA MBG522 300 MBG523 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 200 100 100 (2) (3) 0 0 0 100 Tamb (oC) 0 200 1.0 VF (V) 1.5 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on a FR4 printed-circuit board. Fig.2 0.5 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage; typical values. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents; Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 28 4 104 Philips Semiconductors Product specification Low-leakage diode BAS45AL MBD456 4 10halfpage handbook, IR (nA) 3 MBG524 3 handbook, halfpage Cd (pF) 10 2 max 10 2 typ 10 1 1 10 1 0 0 50 100 T j ( oC) 150 0 5 VR = 125 V. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. handbook, full pagewidth tr 10 15 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R = 50 Ω i MGA881 (1) 90% VR input signal Fig.7 Reverse recovery time test circuit and waveforms. 1999 May 28 t rr 5 output signal Philips Semiconductors Product specification Low-leakage diode BAS45AL PACKAGE OUTLINE Hermetically sealed glass surface mounted package; 2 connectors k SOD80C a (1) D L L H DIMENSIONS (mm are the original dimensions) 0 UNIT D H L mm 1.60 1.45 3.7 3.3 0.3 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD80C 100H01 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 28 6 Philips Semiconductors Product specification Low-leakage diode BAS45AL NOTES 1999 May 28 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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