ON NTGD1100LT1 Power mosfet 8 v, â®.3 a, load switch with level−shift, p−channel, tsop−6 Datasheet

NTGD1100L
Power MOSFET
8 V, ±3.3 A, Load Switch with Level−Shift,
P−Channel, TSOP−6
The NTGD1100L integrates a P and N−Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The P−Channel device is
specifically designed as a load switch using ON Semiconductor
state−of−the−art trench technology. The N−Channel, with an external
resistor (R1), functions as a level−shift to drive the P−Channel. The
N−Channel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both VIN and VON/OFF
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V(BR)DSS
8.0 V
ID MAX
±3.3 A
55 m @ −2.5 V
80 m @ −1.8 V
SIMPLIFIED SCHEMATIC
Features
•
•
•
•
•
•
•
RDS(on) TYP
40 m @ −4.5 V
4
Extremely Low RDS(on) Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 3000 V
Pb−Free Package is Available
2,3
Q2
6
Q1
5
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VIN
8.0
V
VON/OFF
8.0
V
Continuous Load Current Steady TA = 25°C
(Note 1)
State
TA = 85°C
IL
±3.3
A
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
PD
tp = 10 s
ILM
±10
A
TJ,
TSTG
−55 to
150
°C
IS
−1.0
A
ESD
3.0
kV
TL
260
°C
Rating
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RJA
150
°C/W
Junction−to−Foot – Steady State (Note 1)
RJF
50
Input Voltage (VDSS, P−Ch)
ON/OFF Voltage (VGS, N−Ch)
Pulsed Load Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 k)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
±2.4
W
0.83
0.43
THERMAL RESISTANCE RATINGS
March, 2007 − Rev. 6
D1/G2
6
G1
5
1
TSOP−6
CASE 318G
STYLE 11
TZ M G
G
1
S1
TZ
M
G
S2
4
2 3
D2 D2
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTGD1100LT1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2007
MARKING DIAGRAM &
PIN ASSIGNMENT
1
NTGD1100LT1G
Package
Shipping †
TSOP−6
3000/Tape & Reel
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD1100L/D
NTGD1100L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Q2 Drain−to−Source Breakdown Voltage
VIN
VGS2 = 0 V, ID2 = 250 A
8.0
Forward Leakage Current
IFL
Characteristic
Typ
Max
Unit
TJ = 25°C
1.0
A
TJ = 125°C
10
OFF CHARACTERISTICS
VGS2 = 0 V,
VDS2 = 8.0 V
Q1 Gate−to−Source Leakage Current
IGSS
VDS1 = 0 V, VGS1 = ±8.0 V
Q1 Diode Forward On−Voltage
VSD
IS = −1.0 A, VGS1 = 0 V
V
−0.7
±100
nA
−1.0
V
ON CHARACTERISTICS
Voltage ON/OFF
VON/OFF
Q1 Gate Threshold Voltage
1.5
8.0
V
VGS1 = VDS1, ID = 50 A
0.6
1.2
V
VGS2 = VDS2, ID = 250 A
1.8
VGS1
Input Voltage
VIN
Q2 Drain−to−Source On Resistance
RDS(on)
Load Current
VON/OFF = 1.5 V,
IL = 1.0 A
IL
ON/OFF
55
70
VIN = 1.8 V
80
140
1.0
VDROP ≤ 0.2 V, VIN = 2.5 V,
VON/OFF = 1.5 V
1.0
VDROP ≤ 0.2 V, VIN = 1.8 V,
VON/OFF = 1.5 V
1.0
Q2
A
VOUT
C1
6
6
5
CO
LOAD
Q1
1
CI
R2
R2
GND
Figure 1. Load Switch Application
Components
Description
Values
R1
Pullup Resistor
Typical 10 k to 1.0 M
R2
Optional Slew−Rate Control
Typical 0 to 100 k
C0
Output Capacitance
Usually < 1.0 F
C1
Optional In−Rush Current Control
Typical ≤ 1000 pF
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2
m
VIN = 2.5 V
2,3
R1
V
55
40
VDROP ≤ 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V
4
VIN
8.0
VIN = 4.5 V
NTGD1100L
TYPICAL CHARACTERISTICS
0.400
0.300
0.350
0.250
0.250
VDROP, (V)
VDROP, (V)
0.300
TJ = 125°C
0.200
0.150
TJ = 25°C
0.200
TJ = 125°C
0.150
TJ = 25°C
0.100
0.100
0.050
0.050
0
0
0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
0
0
0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
IL, (A)
IL, (A)
Figure 3. VDROP vs. IL @ VIN = 4.5 V
TJ = 125°C
TJ = 25°C
IL = 1.0 A
VON/OFF = 1.5 to 8.0 V
0
1.00
2.00
3.00
4.00
5.00
6.00
7.00
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.36
0.34
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
8.00
0.15
0.14 IL = 1.0 A
0.13 VON/OFF = 1.5 to 8.0 V
0.12
0.11
0.10
VIN = 1.8 V
0.09
0.08
0.07
0.06
VIN = 5.0 V
0.05
0.04
0.03
0.02
0.01
0
−50
−25
0
25
50
75
100
125
VIN, (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On Resistance vs. Input Voltage
Figure 5. On Resistance Variation with
Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 2. VDROP vs. IL @ VIN = 2.5 V
1.7
1.5
IL = 1.0 A
VON/OFF = 1.5 to 8.0 V
VIN = 5.0 V
1.3
1.1
VIN = 1.8 V
0.9
0.7
−50
−25
0
25
50
75
100
125
150
TJ, TEMPERATURE JUNCTION (°C)
Figure 6. Normalized On Resistance Variation with
Temperature
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3
150
NTGD1100L
TYPICAL CHARACTERISTICS
60
60
IL = 1.0 A
VON/OFF = 1.5 V
C1 = 10 F
C0 = 1.0 F
45
40
35
30
tf
25
20
tr
15
10
5
0
55
50
td(off)
TIME (S)
TIME (S)
55
50
1
2
3
4
5
45
40
35
30
tf
25
20
15
10
td(on)
0
td(off)
IL = 1.0 A
VON/OFF = 3.0 V
C1 = 10 F
C0 = 1.0 F
6
7
5
0
8
tr
td(on)
0
1
2
3
R2 (k)
7
8
30
35
tf
25
30
tr
tf
25
20
td(off)
IL = 1.0 A
VON/OFF = 1.5 V
C1 = 10 F
C0 = 1.0 F
15
10
TIME (S)
TIME (S)
6
Figure 8. Switching Variation R2 @
VIN = 4.5 V, R1 = 20 kW
40
td(on)
20
td(off)
15
IL = 1.0 A
VON/OFF = 3.0 V
C1 = 10 F
C0 = 1.0 F
10
tr
5
5
0
1
2
3
4
5
6
7
0
8
td(on)
0
1
2
R2 (k)
3
4
5
6
7
8
R2 (k)
Figure 9. Switching Variation R2 @
VIN = 2.5 V, R1 = 20 kW
RJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
5
R2 (k)
Figure 7. Switching Variation R2 @
VIN = 4.5 V, R1 = 20 kW
0
4
Figure 10. Switching Variation R2 @
VIN = 2.5 V, R1 = 20 kW
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
1E−03
Single Pulse
0.01
1E−02
1E−01
1E+00
1E+01
1E+02
SQUARE WAVE PULSE DURATION TIME, t (sec)
Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad)
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4
1E+03
NTGD1100L
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
DIM
A
A1
b
c
D
E
e
L
HE
q
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 11:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1/GATE 2
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTGD1100L/D
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