PD- 95338
IRLL2705PbF
Surface Mount
l Dynamic dv/dt Rating
l Logic-Level Gate Drive
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
l Lead-Free
Description
HEXFET® Power MOSFET
l
D
VDSS = 55V
RDS(on) = 0.04Ω
G
ID = 3.8A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA =
ID @ TA =
ID @ TA =
IDM
PD @TA =
PD @TA =
25°C
25°C
70°C
25°C
25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
5.2
3.8
3.0
30
2.1
1.0
8.3
± 16
110
3.8
0.10
7.5
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
93
48
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
05/28/04
IRLL2705PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
1.0
5.1
Typ.
0.061
32
3.5
9.7
6.2
12
35
22
870
220
92
Max. Units
Conditions
V
V GS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.040
V GS = 10V, ID = 3.8A
0.051
Ω
VGS = 5.0V, ID = 3.8A
0.065
V GS = 4.0V, ID = 1.9A
2.0
V
V DS = V GS, ID = 250µA
S
V DS = 25V, ID = 1.9A
25
V DS = 55V, VGS = 0V
µA
250
V DS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
V GS = -16V
48
ID = 3.8A
5.3
nC V DS = 44V
14
V GS = 10V, See Fig. 6 and 9
V DD = 28V
ID = 3.8A
ns
RG = 6.2Ω
RD = 7.1Ω, See Fig. 10
V GS = 0V
pF
V DS = 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
0.91
showing the
A
integral reverse
30
p-n junction diode.
1.3
V
TJ = 25°C, IS = 3.8A, VGS = 0V
58
88
ns
TJ = 25°C, I F = 3.8A
140 210
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 15mH
RG = 25Ω, I AS = 3.8A. (See Figure 12)
2
ISD ≤ 3.8A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRLL2705PbF
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
V DS , Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
V DS = 25V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
5.0
I D = 3.8A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLL2705PbF
1400
V GS , Gate-to-Source Voltage (V)
1200
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
I D = 3.8A
V DS = 44V
V DS = 28V
16
1000
12
800
Coss
600
400
Crss
200
0
A
1
10
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
100
0
10
VDS , Drain-to-Source Voltage (V)
40
A
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
30
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
A
1.4
10
100µs
1ms
1
10ms
0.1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLL2705PbF
10V
QGS
RD
V DS
QG
VGS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
PDM
t
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJA + T A
0.0001
0.001
0.01
0.1
1
10
100
1000
A
10000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
- VDD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRLL2705PbF
250
TOP
BOTTOM
200
150
100
50
0
VDD = 25V
25
V(BR)DSS
ID
1.7A
3.0A
3.8A
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRLL2705PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
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IRLL2705PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXF ET PRODUCT MARKING
T HIS IS AN IRF L014
PART NUMBER
INT ERNAT IONAL
RECT IF IER
LOGO
FL014
314P
T OP
8
LOT CODE
AXXXX
A = AS S EMBLY S IT E
DATE CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DES IGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
BOT TOM
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IRLL2705PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
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