Seme LAB D2008 Metal gate rf silicon fet Datasheet

TetraFET
D2008UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
5.08 (0.200)
typ.
2.54
(0.100)
2
1
• SUITABLE FOR BROAD BAND
APPLICATIONS
3
• LOW Crss
• SIMPLE BIAS CIRCUITS
0.66 (0.026)
1.14 (0.045)
• LOW NOISE
0.71 (0.028)
0.86 (0.034)
• HIGH GAIN – 13 dB MINIMUM
45˚
TO-39 PACKAGE
PIN1 – DRAIN
PIN2 – GATE
PIN3 – SOURCE
APPLICATIONS
• VHF COMMUNICATIONS
from DC to 400MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
29W
65V
±20V
2A
–65 to 150°C
200°C
Prelim. 3/97
D2008UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
2
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 0.4A
GPS
Common Source Power Gain
PO = 5W
η
Drain Efficiency
VDS = 28V
VSWR Load Mismatch Tolerance
f = 400MHz
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
IDQ = 0.2A
65
1
V
0.36
S
13
dB
40
%
20:1
—
Ciss
Input Capacitance
VDS = 0
VGS = –5V f = 1MHz
20
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
11
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
1
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Max. 6.0°C / W
Prelim. 3/97
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