Micronas HAL114SO-A Unipolar hall switch ic Datasheet

MICRONAS
INTERMETALL
HAL114
Unipolar Hall Switch IC
MICRONAS
Edition June 10, 1998
6251-456-1DS
HAL114
Unipolar Hall Switch IC
in CMOS technology
Marking Code
Type
Temperature Range
Introduction
The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated
Hall plate, a Schmitt trigger, and an open-drain output
transistor (see Fig. 2).
The HAL114 has a unipolar behavior: The output turns
low with a magnetic south pole on the branded side of
the package (see figures 3 and 4). The output turns high
if the magnetic field is removed. The output signal remains high if the magnetic north pole approaches the
branded side of the package.
The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from –40°C up
to 150 °C.
The HAL114 is available in a SMD-package (SOT-89A)
and in a leaded version (TO-92UA).
HAL114SO,
HAL114UA
A
E
C
114A
114E
114C
Operating Junction Temperature Range (TJ)
A: TJ = –40 °C to +170 °C
E: TJ = –40 °C to +100 °C
C: TJ = 0 °C to +100 °C
The relationship between ambient temperature (TA) and
junction temperature (TJ) is explained on page 8.
Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A, E, or C
Package: SO for SOT-89A,
UA for TO-92UA
Type: 114
Features:
– operates from 4.5 V to 24 V supply voltage
– overvoltage protection
Example: HAL114UA-E
– reverse-voltage protection at VDD-pin
→ Type: 114
→ Package: TO-92UA
→ Temperature Range: TJ = –40 °C to +100 °C
– short-circuit protected open-drain output by thermal
shutdown
– operates with magnetic fields from DC to 20 kHz
– stable magnetic switching points over a wide supply
voltage range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the magnetic switching points
– ideal sensor for contactless switches and speed measurement in hostile automotive and industrial environments
Specifications
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
Solderability
– Package SOT-89A: according to IEC68-2-58
– Package TO-92UA: according to IEC68-2-20
VDD
1
– switching type: unipolar
3
OUT
– output turns low with magnetic south pole on branded
side of package
– output turns high if magnetic field is removed
2
GND
Fig. 1: Pin configuration
2
MICRONAS INTERMETALL
HAL114
Functional Description
Outline Dimensions
4.55 ±0.1
The HAL114 is a CMOS integrated circuit with a switching output in response to magnetic fields. It processes
the “Hall Voltage” internally: The Hall Voltage is proportional to the magnetic flux component Bz orthogonal to
an integrated Hall Plate, in case an electric current is imposed to the plate. The HAL114 compares the Hall Voltage with a predefined threshold and generates the output signal dependent of the direction of the magnetic
field. A special circuit compensates for the temperature
dependent effects of the IC, as well as the external magnet. A built-in hysteresis eliminates possible oscillations
of the output signal adjacent to its switching point so that
“output bouncing” is avoided. The output is short-circuit
protected by limiting high currents and by sensing excess temperature. Shunt protection devices clamp
voltage peaks at the Output-Pin and VDD-Pin together
with external series resistors. Reverse current is limited
at the VDD-Pin by an internal series resistor up to –15 V.
No external reverse protection diode is needed at the
VDD-Pin for values ranging from 0 V to –15 V.
HAL114
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
0.7
y
2
4 ±0.2
2.6 ±0.1
top view
1
2
3
0.4
1.53 ±0.05
0.4
0.4
1.5
3.0
branded side
0.05 ±0.05
SPGS7001-6-A/2E
Fig. 3:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
Short Circuit &
Overvoltage
Protection
4.06 ±0.1
1.5 ±0.05
Hall Plate
sensitive area
1.7
0.125
Comparator
OUT
Output
sensitive area
2.03
0.3
3
y
3.05 ±0.1
GND
0.5
2
0.48
Fig. 2: HAL114 block diagram
0.55
1
2
3.1
3
14.0
min.
0.36
0.42
Dimensions of Sensitive Area
1.27 1.27
2.54
0.4 mm x 0.2 mm
branded side
Positions of Sensitive Area
45°
0.8
SOT-89A
TO-92UA
SPGS7002-6-A/1E
x = 0 ± 0.2
x = 0 ± 0.2
y = 0.98 ± 0.2
y = 1.0 ± 0.2
Fig. 4:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
x is referenced to the center of the package
MICRONAS INTERMETALL
3
HAL114
Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–15
281)
V
–VP
Test Voltage for Supply
1
–242)
–
V
–IDD
Reverse Supply Current
1
–
501)
mA
IDDZ
Supply Current through
Protection Device
1
–2003)
2003)
mA
VO
Output Voltage
3
–0.3
281)
V
IO
Continuous Output On Current
3
–
30
mA
IOmax
Peak Output On Current
3
–
2503)
mA
IOZ
Output Current through
Protection Device
3
–2003)
2003)
mA
TS
Storage Temperature Range
–65
150
°C
TJ
Junction Temperature Range
–40
–40
150
1704)
°C
1) as long as T max is not exceeded
J
2) with a 220 Ω series resistance at pin
3) t < 2 ms
4) t < 1000h
1 corresponding to test circuit 1
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
4.5
–
24
V
IO
Continuous Output On Current
3
0
–
20
mA
RV
Series Resistor
1
–
–
270
Ω
Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Test Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
4
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VOL
Output Voltage over
Temperature Range
3
–
120
400
mV
IOL = 12.5 mA
VOL
Output Voltage over
Temperature Range
3
–
190
500
mV
IOL = 20 mA
IOH
Output Leakage Current
3
–
–
1
µA
B < Boff,
VOH = 24 V, TJ = 25 °C
MICRONAS INTERMETALL
HAL114
Electrical Characteristics, continued
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
IOH
Output Leakage Current over
Temperature Range
3
–
–
10
µA
B < Boff
VOH = 24 V, TJ < 150 °C
IDD
Supply Current
1
6
8.2
11
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
3.9
8.2
12
mA
ten(O)
Enable Time of Output
after Setting of VDD
3
–
6
10
µs
VDD = 12 V
tr
Output Rise Time
3
–
85
400
ns
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
tf
Output Fall Time
3
–
60
400
ns
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
RthJSB
case
SOT-89A
Thermal Resistance Junction to
Substrate Backside
–
150
200
K/W
Fiberglass Substrate
pad size see Fig. 6
RthJA
case
TO-92UA
Thermal Resistance
Junction to Soldering Point
–
150
200
K/W
Leads at ambient temperature at a distance of 2 mm
from case
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
–40 °C
Parameter
25 °C
100 °C
170 °C
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
On point BON
7.5
21.5
36.0
7.0
21.3
34.0
6.3
19.6
31.5
6.0
19.2
31.0
mT
Off point BOFF
4.3
17.4
33.2
4.0
17.6
31.2
3.6
16.1
28.9
3.6
15.8
28.8
mT
Hysteresis BHYS
2.8
4.1
5.0
2.8
3.7
4.5
2.6
3.5
4.0
2.2
3.4
4.0
mT
Output Voltage
5.0
2.0
0 BOFF min
BOFF
BON
2.0
BON max
BHYS
1.0
Fig. 5: Definition of switching points and hysteresis
MICRONAS INTERMETALL
Fig. 6: Recommended pad size SOT-89A
Dimensions in mm
5
HAL114
mT
30
mT
30
VDD = 12 V
BON
BOFF
BON
BOFF 25
25
BON
20
20
BOFF
15
15
10
TA = –40 °C
10
TA = 25 °C
TA = 150 °C
5
5
0
–50
0
50
100
150
0
200 °C
3
4
5
6
TA
8 V
VDD
Fig. 7: Typical magnetic switching points
versus temperature
Fig. 9: Typical magnetic switching points
versus supply voltage
mT
30
BON
BOFF
7
mA
15
25
IDD
TA = –40 °C
10
TA = 25 °C
20
5
15
0
TA = –40 °C
10
TA = 150 °C
–5
TA = 25 °C
TA = 150 °C
5
0
–10
0
5
10
15
20
25
30 V
VDD
Fig. 8: Typical magnetic switching points
versus supply voltage
6
–15
–15 –10 –5
0
5
10 15 20 25 30 V
VDD
Fig. 10: Typical supply current
versus supply voltage
MICRONAS INTERMETALL
HAL114
mV
500
mA
12
IO = 12.5 mA
IDD
TA = –40 °C
10
VOL 400
TA = 25 °C
8
300
TA = 150 °C
6
TA = 150 °C
200
4
TA = 25 °C
100
2
0
TA = –40 °C
0
2
4
6
8 V
0
0
5
10
15
20
25
30 V
VDD
VDD
Fig. 11: Typical supply current
versus supply voltage
Fig. 13: Typical output low voltage
versus supply voltage
mV
500
mA
12
VDD = 12 V
IDD
10
IO = 20 mA
VOL 400
VDD = 4.5 V
8
VDD = 24 V
300
6
200
4
IO = 12.5 mA
100
2
0
–50
0
50
100
150
TA
Fig. 12: Typical supply current
versus temperature
MICRONAS INTERMETALL
200 °C
0
–50
0
50
100
150
200 °C
TA
Fig. 14: Typical output low voltage
versus temperature
7
HAL114
RV
220 Ω
µA
2
10
1
OUT
VDD
IOH
RL
VDD
3
1
10
4.7 nF
VOH = 24 V
VDD = 5 V
0
10
2
–1
10
GND
Fig. 16: Recommended application circuit
–2
10
Ambient Temperature
–3
10
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient temperature TA).
–4
10
–50
0
50
100
150
200 °C
TA
Fig. 15: Typical output leakage current
versus temperature
Application Note
For electromagnetic immunity, it is recommended to apply a 330 pF minimum capacitor between VDD (pin 1)
and Ground (pin 2).
TJ = TA + ∆T
At static conditions, the following equations are valid:
– for SOT-89A:
∆T = IDD * VDD * RthJSB
– for TO-92UA:
∆T = IDD * VDD * RthJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Data Sheet History
For applications requiring robustness to conducted disturbances (transients), a 220 Ω series resistor to pin 1
and a 4.7 nF capacitor between VDD (pin1) and Ground
(pin 2) is recommended. The series resistor and the capacitor should be placed as close as possible to the IC.
1. Final data sheet: “HAL114 Unipolar Hall Switch IC”,
June 10, 1998, 6251-456-1DS. First release of the final
data sheet.
MICRONAS INTERMETALL GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: [email protected]
Internet: http://www.intermetall.de
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for
conclusion of a contract nor shall they be construed as to
create any liability. Any new issue of this data sheet invalidates
previous issues. Product availability and delivery dates are exclusively subject to our respective order confirmation form; the
same applies to orders based on development samples delivered. By this publication, MICRONAS INTERMETALL GmbH
does not assume responsibility for patent infringements or
other rights of third parties which may result from its use.
Reprinting is generally permitted, indicating the source. However, our prior consent must be obtained in all cases.
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (06/98)
Order No. 6251-456-1DS
8
MICRONAS INTERMETALL
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