APT12067B2FLL
APT12067LFLL
1200V 18A 0.670Ω
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT12067B2FLL_LFLL
UNIT
1200
Volts
Drain-Source Voltage
18
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
565
Watts
Linear Derating Factor
4.55
W/°C
PD
TJ,TSTG
72
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
18
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 9A)
TYP
MAX
UNIT
Volts
0.670
Ohms
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
2-2004
Characteristic / Test Conditions
050-7087 Rev B
Symbol
APT12067B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Coss
Crss
Test Conditions
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
3
Total Gate Charge
Qgs
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
ID = 18A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 600V
Turn-off Delay Time
tf
ID = 18A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
INDUCTIVE SWITCHING @ 25°C
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
705
VDD = 800V, VGS = 15V
Eon
nC
19
RG = 0.6Ω
Eon
UNIT
pF
115
150
20
95
22
19
22
VGS = 10V
Qgd
MAX
4420
660
VDD = 600V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
ID = 18A, RG = 5Ω
302
INDUCTIVE SWITCHING @ 125°C
1239
VDD = 800V, VGS = 15V
ID = 18A, RG = 5Ω
µJ
402
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
72
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID 18A)
1.3
Volts
dv/
Peak Diode Recovery
18
V/ns
dt
18
dv/
5
dt
Reverse Recovery Time
(IS = -ID 18A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -ID 18A, di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -ID 18A, di/dt = 100A/µs)
Tj = 25°C
13
Tj = 125°C
21
t rr
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.22
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.15
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7087 Rev B
2-2004
0.25
0.1
0.3
Duty Factor D = t1/t2
0.1
0.05
0
t1
t2
0.05
10-5
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 15.43mH, RG = 25Ω, Peak IL = 18A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID18A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT12067B2FLL - LFLL
40
VGS =15,10 & 8V
Junction
temp. (°C)
0.0893
Power
(watts)
0.0842
0.0485
0.0102F
0.106F
0.979F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
6.5V
30
6V
25
20
5.5V
15
10
5V
5
Case temperature. (°C)
4.5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
40
35
30
25
20
TJ = +125°C
15
TJ = +25°C
10
05
0
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
18
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
NORMALIZED TO
= 10V @ I = 9A
GS
D
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
5
10
15
20
25
30
35
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
14
12
10
8
6
4
2
0
1.10
1.05
1.00
0.95
0.90
0.85
-50
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
V
D
GS
= 9A
= 10V
2.0
1.5
1.0
0.5
0.0
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.1
1.0
0.9
0.8
2-2004
ID, DRAIN CURRENT (AMPERES)
V
1.15
16
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.40
0.7
0.6
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
-50 -25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7087 Rev B
ID, DRAIN CURRENT (AMPERES)
45
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
50
7V
35
10,000
Ciss
5,000
100µS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
D
= 18A
12
VDS=240V
8
500
Coss
100
Crss
10
VDS=600V
VDS=960V
4
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
I
1,000
1mS
10mS
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT12067B2FLL - LFLL
20,000
72
0
20 40 60 80 100 120 140 160 180 200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
160
G
50
= 800V
= 5Ω
T = 125°C
J
L = 100µH
120
V
100
DD
R
G
= 800V
40
= 5Ω
tr and tf (ns)
td(on) and td(off) (ns)
DD
R
td(off)
140
V
T = 125°C
J
80
L = 100µH
60
tf
30
20
tr
40
10
td(on)
20
0
0
0
10
20
30
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
15
20
25
30
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000
DD
R
G
V
J
L = 100µH
050-7087 Rev B
2-2004
Eon and Eoff (µJ)
EON includes
diode reverse recovery
1000
500
Eoff
0
DD
I
D
Eon
T = 125°C
1500
10
3000
= 800V
= 5Ω
2500
SWITCHING ENERGY (µJ)
V
5
= 800V
= 18A
T = 125°C
J
L = 100µH
EON includes
2000
diode reverse recovery
1500
Eon
1000
Eoff
500
0
0
5
10
15
20
25
30
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT12067 B2FLL- LFLL
10%
90%
Gate Voltage
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
tf
tr
Drain Current
90%
10%
5%
5%
Drain Voltage
90%
Drain Voltage
10%
Drain Current
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60D120B
IC
V CC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
2-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7087 Rev B
Drain
Drain
20.80 (.819)
21.46 (.845)