NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Littelfuse.com 20 A, 400 V VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V Features • • • • • • • • • Ideal for Coil−on−Plug and Driver−on−Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Devices C RG G RGE E Applications 1 • Ignition Systems DPAK CASE 369C STYLE 7 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 440 V Collector−Gate Voltage VCER 440 V Gate−Emitter Voltage VGE "15 V Rating MARKING DIAGRAM 1 G C Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC E Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA 2.0 kV Y WW NGD8201x x G 8.0 kV ESD (Charged−Device Model) ESD ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 125 0.83 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range YWW NGD 8201xG C = Year = Work Week = Device Code =A = Pb−Free Package ORDERING INFORMATION Device NGD8201ANT4G Package Shipping DPAK 2500 / Tape & Reel (Pb−Free) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Specifications subject to change without notice. © 2016 Littelfuse, Inc. December, 2016 − Rev. 12 1 Publication Order Number: NGD8201AN/D NGD8201AN UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Symbol Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS Value 250 200 180 EAS(R) 2000 Unit mJ mJ THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper). ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 V IC = 10 mA TJ = −40°C to 175°C 390 415 440 VGE = 0 V, VCE = 15 V TJ = 25°C 0.1 1.0 mA mA OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Clamp Voltage Reverse Collector−Emitter Leakage Current Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current ICES TJ = 25°C 0.5 1.5 10 VCE = 200 V, VGE = 0 V TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 IC = −75 mA TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 TJ = 25°C 0.05 0.2 1.0 TJ = 175°C 1.0 8.5 25 TJ = −40°C 0.005 0.025 0.2 BVCES(R) ICES(R) VCE = −24 V V mA BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA Gate Resistor RG TJ = −40°C to 175°C 70 Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW VGE(th) TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* 4.0 4.6 5.2 W ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) mV/°C *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. Specifications subject to change without notice. © 2016 Littelfuse, Inc. December, 2016 − Rev. 12 2 Publication Order Number: NGD8201AN/D NGD8201AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 0.85 1.03 1.35 V TJ = 175°C 0.7 0.9 1.15 TJ = −40°C 0.9 1.11 1.4 TJ = 25°C 0.9 1.11 1.45 TJ = 175°C 0.8 1.01 1.25 TJ = −40°C 1.0 1.18 1.5 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V IC = 9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V IC = 20 A, VGE = 4.5 V Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* TJ = 25°C 1.1 1.4 1.9 TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.3 1.42 2.0 TJ = 25°C 10 18 25 Mhos pF DYNAMIC CHARACTERISTICS Input Capacitance CISS 1100 1300 1500 Output Capacitance COSS 70 80 90 Transfer Capacitance CRSS 18 20 22 f = 10 kHz, VCE = 25 V TJ = 25°C *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. Specifications subject to change without notice. © 2016 Littelfuse, Inc. December, 2016 − Rev. 12 3 Publication Order Number: NGD8201AN/D NGD8201AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 6.0 8.0 10 mSec TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−On Delay Time Rise Time td(off) tf VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W, VGE = 5.0 V td(off) tf VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH, VGE = 5.0 V td(on) tr VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W, VGE = 5.0 V Specifications subject to change without notice. © 2016 Littelfuse, Inc. December, 2016 − Rev. 12 4 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 Publication Order Number: NGD8201AN/D NGD8201AN TYPICAL ELECTRICAL CHARACTERISTICS 400 30 TJ = 25°C IA, AVALANCHE CURRENT (A) SCIS ENERGY (mJ) 350 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 0 2 6 4 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 −25 INDUCTOR (mH) 60 2.0 IC = 25 A IC = 20 A 1.5 IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 −50 −25 0 25 75 50 100 125 150 50 75 100 125 150 175 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 175 4.5 V 5V 0 2 1 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V 50 4.5 V 4V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 50 VGE = 10 V TJ, JUNCTION TEMPERATURE (°C) 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 0 25 Figure 2. Open Secondary Avalanche Current vs. Temperature IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching 1.75 0 TJ, JUNCTION TEMPERATURE (°C) 2.5 V 0 1 2 3 4 5 6 7 8 4V 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage December, 2016 − Rev. 12 4.5 V 50 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Specifications subject to change without notice. © 2016 Littelfuse, Inc. VGE = 10 V Figure 6. Collector Current vs. Collector−to−Emitter Voltage 5 Publication Order Number: NGD8201AN/D NGD8201AN TYPICAL ELECTRICAL CHARACTERISTICS 10000 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 VCE = 5 V 40 1000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 0 0 0.5 1 1.5 TJ = −40°C 2 2.5 3 3.5 4 10 VCE = 200 V 1.0 0.1 −50 0 −25 25 50 100 75 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean Mean + 4 s 2.00 1.75 C, CAPACITANCE (pF) GATE THRESHOLD VOLTAGE (V) 100 VGE, GATE TO EMITTER VOLTAGE (V) 2.50 Mean − 4 s 1.50 1.25 1.00 0.75 0.50 Ciss 1000 Coss 100 Crss 10 1.0 0.25 0 −50 −25 0 25 50 75 100 125 150 0.1 175 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 25 12 10 10 SWITCHING TIME (ms) tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 0 TJ, JUNCTION TEMPERATURE (°C) 12 SWITCHING TIME (ms) VCE = −24 V 50 75 100 125 150 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature Specifications subject to change without notice. © 2016 Littelfuse, Inc. December, 2016 − Rev. 12 6 175 Publication Order Number: NGD8201AN/D R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) NGD8201AN 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) 0.1 t1 t2 Single Pulse 0.01 0.000001 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 TJ(pk) − TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t ≤ 0.1 s 1 10 100 1000 t,TIME (S) RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 t1 0.02 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 TJ(pk) − TA = P(pk) RqJC(t) 0.0001 0.001 0.01 0.1 1 10 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) Specifications subject to change without notice. © 2016 Littelfuse, Inc. December, 2016 − Rev. 12 7 Publication Order Number: NGD8201AN/D NGD8201AN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 2 H DETAIL A 3 c b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MAX MIN 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Littelfuse.com Specifications subject to change without notice. © 2016 Littelfuse, Inc. December, 2016 − Rev. 12 8 Publication Order Number: NGD8201AN/D