BBY53... Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03L BBY53 BBY53-05W 3 1 3 2 1 Type BBY53 BBY53-02L* BBY53-02V BBY53-02W BBY53-03L* BBY53-03W BBY53-05W D 2 D 1 2 1 Package SOT23 TSLP-2-1 SC79 SCD80 TSLP-3-1 SOD323 SOT323 2 Configuration common cathode single, leadless single single single, leadless single common cathode LS(nH) 2 0.4 0.6 0.6 0.4 1.8 1.4 Marking S7s LL L LL LL white/5 S7s * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage temperature Tstg -55 ... 150 1 Value Unit V Oct-13-2003 BBY53... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 4 V - - 10 VR = 4 V, T A = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 4.8 5.3 5.8 VR = 3 V, f = 1 MHz 1.85 2.4 3.1 1.8 2.2 2.6 - 0.47 - Capacitance ratio CT1/CT3 VR = 1 V, VR = 3 V, f = 1 MHz Series resistance rS Ω VR = 1 V, f = 1 GHz 2 Oct-13-2003 BBY53... Diode capacitance CT = ƒ (VR) Capacitance change ∆C = ƒ(TA) f = 1MHz f = 1 MHz 5.25 8.4 8 7.6 7.2 6.8 6.4 6 5.6 5.2 4.8 4.4 4 3.6 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 % 3V 3.75 1V 3 ∆C T CT pF9 2.25 1.5 0.75 0 -0.75 -1.5 -2.25 -3 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V -3.75 -40 4 VR -20 0 20 40 60 °C 100 TA Temperature coefficient of the diode capacitance TCC = ƒ (VR ) f = 1 MHz 10 -2 TCC 1/°C 10 -3 10 -4 0 0.5 1 1.5 2 2.5 3 V 4 VR 3 Oct-13-2003