SuperFET
TM
FCP7N60/FCPF7N60/FCPF7N60YDTU
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
• Typ. Rds(on)=0.53Ω
• Ultra low gate charge (typ. Qg=25nC)
• Low effective output capacitance (typ. Coss.eff=60pF)
• 100% avalanche tested
D
{
z
G
{
G DS
TO-220
FCP Series
z
z
TO-220F
GD S
{
FCPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FCP7N60
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
FCPF7N60
600
(Note 1)
Unit
V
7
4.4
7*
4.4*
A
A
21
21*
A
± 30
V
230
mJ
IAR
Avalanche Current
(Note 1)
7
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(TC = 25°C)
- Derate above 25°C
4.5
V/ns
83
0.67
31
0.25
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCP7N60
FCPF7N60
Unit
RθJC
Thermal Resistance, Junction-to-Case
1.5
4.0
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2008 Fairchild Semiconductor Corporation
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
1
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FCP7N60/FCPF7N60/FCPF7N60YDTU
June 2008
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCP7N60
FCP7N60
TO-220
-
-
50
FCPF7N60
FCPF7N60
TO-220F
-
-
50
FCPF7N60
FCPF7N60YDTU
TO-220F (Forming)
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
VGS = 0V, ID = 250μA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250μA, TJ = 150°C
--
650
--
V
ID = 250μA, Referenced to 25°C
--
0.6
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 7A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 3.5A
--
0.53
0.6
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 3.5A
--
6
--
S
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
710
920
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
--
380
500
pF
--
34
--
pF
VDS = 480V, VGS = 0V, f = 1.0MHz
--
22
29
pF
VDS = 0V to 400V, VGS = 0V
--
60
--
pF
VDD = 300V, ID = 7A
RG = 25Ω
--
35
80
ns
--
55
120
ns
--
75
160
ns
--
32
75
ns
--
23
30
nC
--
4.2
5.5
nC
--
11.5
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4)
VDS = 480V, ID = 7A
VGS = 10V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
21
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 7A
--
--
1.4
V
trr
Reverse Recovery Time
--
360
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 7A
dIF/dt =100A/μs
--
4.5
--
μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
1
10
ID , Drain Current [A]
Top :
0
10
1
10
150℃
25℃
0
10
-55℃
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
※ Note
1. VDS = 40V
2. 250μ s Pulse Test
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.0
1.8
1.6
1.4
VGS = 10V
1.2
1.0
0.8
0.6
VGS = 20V
0.4
0.2
0.0
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
-1
0
5
10
15
10
20
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Crss
0
1
10
1.6
VDS = 250V
10
VDS = 400V
8
6
4
2
※ Note : ID = 7A
0
VDS, Drain-Source Voltage [V]
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
1.4
VDS = 100V
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
10
1.2
12
Coss
0
-1
10
1.0
Figure 6. Gate Charge Characteristics
2000
1000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
25℃
0
5
10
15
20
25
QG, Total Gate Charge [nC]
3
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 3.5 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
2
100 us
ID, Drain Current [A]
ID, Drain Current [A]
2
1 ms
10 ms
DC
0
10
※ Notes :
-1
10
o
1. TC = 25 C
Operation in This Area
is Limited by R DS(on)
100 us
1
10
1 ms
10 ms
100 ms
0
10
DC
※ Notes :
-1
10
o
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
-2
10
200
Figure 9-2. Maximum Safe Operating Area
for FCPF7N60
10
1
150
TJ, Junction Temperature [ C]
Operation in This Area
is Limited by R DS(on)
10
100
o
Figure 9-1. Maximum Safe Operating Area
for FCP7N60
10
50
-2
0
1
10
2
10
10
3
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
10.0
ID, Drain Current [A]
7.5
5.0
2.5
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Typical Performance Characteristics (Continued)
FCP7N60/FCPF7N60/FCPF7N60YDTU
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP7N60
Zθ JC(t), Thermal Response
10
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ JC(t) = 1 .5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ JC(t)
0 .1
10
-1
0 .0 5
0 .0 2
0 .0 1
10
t1
s in g le p u ls e
-2
10
PDM
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF7N60
Zθ JC(t), Thermal Response
D = 0 .5
10
0
0 .2
0 .1
※ N o te s :
1 . Z θ JC(t) 4 .0 ℃ /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T JM - T C = P D M * Z θ JC(t)
0 .0 5
10
0 .0 2
-1
0 .0 1
PDM
t1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
5
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Gate Charge Test Circuit & Waveform
VGS
SameType
asDUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
R
L
V
D
S
9
0
%
V
D
D
V
G
S
1
0
%
V
G
S
D
U
T
1
0
V
td
(o
n
)
tr
td
(o
ff)
to
n
tf
to
ff
Unclamped Inductive Switching Test Circuit & Waveforms
B
V
D
S
S
1
-- LIAS2 -------------------E
A
S=2
B
V
D
S
S-V
D
D
L
V
D
S
B
V
D
S
S
IAS
ID
R
G
V
D
D
tp
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
V
t)
D
S(
V
D
D
D
U
T
1
0
V
ID(t)
tp
6
T
im
e
www.fairchildsemi.com
FCP7N60/FCPF7N60/FCPF7N60YDTU
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D U T
V
D S
_
I
S D
L
D r iv e r
R
V
G S
V GS
( D r iv e r )
G
S am e T ype
as D U T
V
D D
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I
S D
d i/d t
( D U T )
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T )
B o d y D io d e R e c o v e r y d v / d t
V
S D
V
D D
B o d y D io d e
F o r w a r d V o lta g e D r o p
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
8
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
9
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Mechanical Dimensions (Continued)
FCP7N60/FCPF7N60/FCPF7N60YDTU
Mechanical Dimensions (Continued)
TO-220F (Y Forming)
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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As used herein:
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
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(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14
11
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
TRADEMARKS