Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 3 6 A A IA EAR EAS TC = 25°C TC = 25°C TC = 25°C 3 20 200 A mJ mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 125 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-263 TO-220 TO-247 (TO-220) (TAB) TO-220 (IXTP) G Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V G RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V ±50 nA D = Drain TAB = Drain Features z z 5 μA 250 μA Ω z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings High power density Applications: z z z z z © 2007 IXYS CORPORATION, All rights reserved (TAB) S Advantages V 4.8 D G = Gate S = Source z TJ = 125°C (TAB) D S TO-247 (IXTH) z 4.5 S Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99767(08/07) IXTA3N100P IXTP3N100P IXTH3N100P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max gfs VDS= 20V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 1.5 TO-220 (IXTP) Outline 2.4 S 1220 70 14.5 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 18Ω (External) 22 27 75 29 ns ns ns ns VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 39 6 20 nC nC nC (TO-220) (TO-247) 0.50 0.21 Source-Drain Diode Pins: 1 - Gate 2 - Drain 1.0 °C/W °C/W °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 3 A ISM Repetitive 9 A VSD IF = IS, VGS = 0V, Note 1 trr IF = 3A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 1.5 V 820 TO-247 (IXTH) Outline ns 1 2 3 ∅P Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain 3 - Source TO-263 (IXTA) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA3N100P IXTP3N100P IXTH3N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 3.0 5.5 VGS = 10V 7V VGS = 10V 8V 7V 5.0 2.5 4.5 6V ID - Amperes ID - Amperes 4.0 2.0 1.5 1.0 3.5 3.0 6V 2.5 2.0 1.5 5V 1.0 0.5 5V 0.5 0.0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 12 14 16 18 20 22 24 26 28 30 Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.0 3.0 VGS = 10V 7V 2.8 VGS = 10V 2.6 RDS(on) - Normalized 2.5 ID - Amperes 10 VDS - Volts VDS - Volts 6V 2.0 1.5 5V 1.0 2.4 2.2 2.0 1.8 I D = 3A 1.6 I D = 1.5A 1.4 1.2 1.0 0.5 0.8 0.6 0.0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 28 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.2 2.6 VGS = 10V 2.4 2.8 TJ = 125ºC 2.2 2.4 2.0 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 2.0 1.6 1.2 1.4 0.8 1.2 TJ = 25ºC 0.4 1.0 0.8 0.0 0 0.5 1 1.5 2 2.5 3 3.5 ID - Amperes © 2007 IXYS CORPORATION, All rights reserved 4 4.5 5 5.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA3N100P IXTP3N100P IXTH3N100P Fig. 7. Input Admittance Fig. 8. Transconductance 4.0 4.5 3.5 4.0 TJ = - 40ºC 3.5 2.5 g f s - Siemens ID - Amperes 3.0 TJ = 125ºC 25ºC -40ºC 2.0 1.5 25ºC 3.0 2.5 2.0 125ºC 1.5 1.0 1.0 0.5 0.5 0.0 0.0 3 3.5 4 4.5 5 5.5 6 0 6.5 0.5 1 VGS - Volts 1.5 2 2.5 3 3.5 4 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 9 VDS = 500V 9 8 I D = 1.5A 8 7 I G = 1mA 6 VGS - Volts IS - Amperes 7 5 TJ = 125ºC 4 3 6 5 4 3 TJ = 25ºC 2 2 1 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 5 VSD - Volts 10 15 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 10,000 10.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 1.00 0.10 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_3N100P(3C)10-31-06