DSK HER103GL High efficiency rectifier Datasheet

Diode Semiconductor Korea HER101GL--- HER108GL
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
A - 405
MECHANICAL DATA
Case:JEDEC A-405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER HER HER HER HER HER HER HER
UNITS
101GL 102GL 103GL 104GL 105GL 106GL 107GL 108GL
Maximum recurrent peak reverse voltage
V RRM
50
100
200
300
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
210
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
1.0
A
IFSM
30.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =125
VF
1.0
1.3
1.7
5.0
IR
V
A
100.0
Typical reverse recovery time
(Note1)
t rr
50
75
ns
Typical junction capacitance
(Note2)
CJ
20
15
pF
Typical thermal resistance
(Note3)
RθJA
60
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
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Diode Semiconductor Korea
HER101GL --- HER108GL
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
10
N 1.
50
N 1.
trr
+0.5A
D.U.T.
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 20/35 ns/cm
100
FIG.3 -- FORWARD DERATING CURVE
1.0
6 0 0 \8 0 0 \1 0 0 0 V
5 0 \1 0 0 \ 2 0 0 V
0.1
0
0 .2 0 .4 0 .6 0 .8
1
1 .2 1.4
1.6
1.8
2
1.0
0.8
0.6
AMPERES
AVERAGE FORWARD CURRENT
TJ=25
P u ls e W id t h = 3 0 0 µ S
0.01
0.4
0.2
0
HER101GL-HER105GL
20
10
6
4
HER107GL-HER108GL
2
1
1
2
4
10
REVERSE VOLTAGE,VOLTS
20
100
125
150
175
40
100
50
8.3ms Single Half
Sine-Wave
40
30
AMPERES
40
PEAK FORWARD SURGE CURRENT
60
0.4
75
50
FIG.5 -- PEAK FORWARD SURGE CURRENT
200
100
0.1 0.2
25
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
TJ=25
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375''(9.5mm)Lead Length
0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
JUNCTION CAPACITANCE,pF
z
3 0 0 \4 0 0 V
10
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
20
10
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
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