Diode Semiconductor Korea HER101GL--- HER108GL VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Glass passivated junction Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 A - 405 MECHANICAL DATA Case:JEDEC A-405,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.008 ounces,0.23 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER HER HER HER HER HER HER HER UNITS 101GL 102GL 103GL 104GL 105GL 106GL 107GL 108GL Maximum recurrent peak reverse voltage V RRM 50 100 200 300 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 1.0 A IFSM 30.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 VF 1.0 1.3 1.7 5.0 IR V A 100.0 Typical reverse recovery time (Note1) t rr 50 75 ns Typical junction capacitance (Note2) CJ 20 15 pF Typical thermal resistance (Note3) RθJA 60 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. www.diode.kr Diode Semiconductor Korea HER101GL --- HER108GL FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 10 N 1. 50 N 1. trr +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/35 ns/cm 100 FIG.3 -- FORWARD DERATING CURVE 1.0 6 0 0 \8 0 0 \1 0 0 0 V 5 0 \1 0 0 \ 2 0 0 V 0.1 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 1.4 1.6 1.8 2 1.0 0.8 0.6 AMPERES AVERAGE FORWARD CURRENT TJ=25 P u ls e W id t h = 3 0 0 µ S 0.01 0.4 0.2 0 HER101GL-HER105GL 20 10 6 4 HER107GL-HER108GL 2 1 1 2 4 10 REVERSE VOLTAGE,VOLTS 20 100 125 150 175 40 100 50 8.3ms Single Half Sine-Wave 40 30 AMPERES 40 PEAK FORWARD SURGE CURRENT 60 0.4 75 50 FIG.5 -- PEAK FORWARD SURGE CURRENT 200 100 0.1 0.2 25 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE TJ=25 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm)Lead Length 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS JUNCTION CAPACITANCE,pF z 3 0 0 \4 0 0 V 10 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 20 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz www.diode.kr