MMBZ5V6A Series Dual Common Anode Zener TVS Features: *Allows Either Two Separate Unidirectional Configuations or a Single Bidirectional Configuations. *Low Leakage Current. *24-40 Watts Peak Power Protection. *Excellent Clamping Capability. *ESD Rating of Class N(exceeding 16KV)per the Human Body Model. *Transient Voltage Suppressors Encapsulated in a SOT-23 Package. SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS 3 1 2 Mechanical Data: *Case: Molded Epoxy *Marking: Marking Code *Maximum Case Temperature for Soldering Purpose: 260 C for 10 sec. *Weight: 0.008grams(approx.) SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON http://www.weitron.com.tw L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 MMBZ5V6A Series Maximum Ratings (TA =25 C Unless otherwise Noted) Characteristics Symbol _ 25 C (1) Peak Power Dissipation @ 1.0 ms @ TL < MMBZ5V6A thru MMBZ10VA MMBZ12VA thru MMBZ33VA P PK Total Power Dissipation on FR-5 Board (2) @ TA =25 C Derate above 25 C Thermal Resistance Junction-to-Ambient PD Value W 24 40 mW mW/ C C/W mW mW/ C C/W Derate above 25 C Thermal Resistance Junction-to-Ambient R θJA 225 1.8 556 300 2.4 417 Junction and Storage Temperature Range TJ ,TSTG -55 to +150 C 260 C Total Power Dissipation on Alumina Substrate (3)@ TA R θJA PD =25 C Lead Solder Temperature-Maximum(10 Second Duration) TL _ _ _ _ NOTE: 1. Non-Repetitive Current Pulse, per FIG 5 and Derated above TA =25 C per FIG 6. 2. FR-5=1.0 _ 0.75 _ 0.62 in. 3. Alumina=0.4 _ 0.3 _ 0.024m, 99.5% alumina Electrical Characteristics (TA =25 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol I PP VC VRWM IR θ VBR IT VBR I IF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ I PP VC VBR VR WM V IR V F IT Working Peak Reverse Votlage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ I T Test Current IP P Maximum Temperature Coef ficient of VBR IF Forward Current VF Forward Voltage @ I F ZZT Maximum Zener Impedance @ I ZT I ZK Reverse Current ZZK Maximum Zener Impedance @ I ZK Uni-Directional TVS Device Marking Item Marking MMBZ5V6A Series XX=Specific Device Code (See Table on Page 3) WEITRON http://www.weitron.com.tw Eqivalent Circuit diagram 3 1 2 MMBZ5V6A Series ELECTRICALCHARACTERISTICS (TA = 25 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V F = 0.9 V Max @ IF = 10 mA) 24 WATTS @ IT ZZT @ I ZT VRWM Device Device Marking IR @ VRWM Volts uA Min Nom Max mA MMBZ5V6A 5A6 3.0 5.0 5.32 5.6 5.88 MMBZ6V2A 6A2 3.0 0.5 5.89 6.2 MMBZ6V8A 6A8 4.5 0.5 6.46 6.8 MMBZ9V1A 9A1 6.0 0.3 8.65 MMB Z10V A 10A 6.5 0.3 9.50 (6) ZZK @ I ZK VC IPP Ω Ω mA V A θVBR mV/ C 20 11 1600 0.25 8.0 3.0 1.26 6.51 1.0 - - - 8.7 2.76 2.80 7.14 1.0 - - - 9.6 2.5 3.4 9.1 9.56 1.0 - - - 14 1.7 7.5 10 10.5 1.0 - - - 14.2 1.7 7.5 VBR (4) (V) (V F = 0.9 V Max @ IF = 10 mA) VC @ I P P Max Zener Impedance (5) Breakdown Voltage 40 WATTS VC @ I PP(6) Breakdown Voltage VRWM IR @ VRWM Volts nA Min Nom @ IT VC IPP θVBR Max mA V A mV/ C VBR (4) (V) Device Device Marking MMBZ12VA 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5 MMBZ15VA 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3 MMBZ18VA 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 MMBZ20VA 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZ27VA 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3 MMBZ33VA 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4 4. V B R measured at pulse test current I T at an ambient temperature of 25 C . 5. Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. T he specified limits are for I Z(AC ) = 0.1 I Z(DC ) , with the AC frequency = 1.0 kHz. 6. S urge current waveform per F ig 5 and derate per F ig 6 WEITRON http://www.weitron.com.tw WE IT R ON MMBZ5V6A Series 1000 15 100 12 10 I R (nA) VBR @ IT BREAKDOWN VOLTAGE(V) 18 9 1 6 0.1 3 0 -40 0 +100 +50 0.01 -40 +150 +85 +25 TEMPERATURE( C) +125 TEMPERATURE( C) FIG.1 Typical Breakdown Voltage Versus Temperature FIG.2 Typical Leakage Current Versus Temperature (Upper curve for each voltage is bidirectional mode,) lower curve is undirectional mode) 320 PD , POWER DISSIPATION(mW) 300 C, CPACITANCE( P F) 280 240 200 5.6 V 160 120 15 V 80 40 0 0 ALUMINA SUBSTRATE 200 150 100 3 2 1 250 FR-5 BOARD 50 0 0 25 50 BIAS(V) PULSE WIDTH (t P ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF I PP . VALUE(%) PEAK VALUE - I PP HALF VALUE = I PP 2 50 tP 0 0 1 2 125 150 3 4 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 t, TIME(ms) Ta , AMBIENT TEMPERATURE( C) FIG.5 Pulse Waveform FIG.6 Pulse Derating Curve WEITRON http://www.weitron.com.tw 175 FIG.4 Steady State Power Derating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ Ta =25 C (Upper curve for each voltage is bidirectional mode,) lower curve is undirectional mode) 100 100 TEMPERATURE( C) FIG.3 Typical Capacitance Versus Bias Voltage _10us tr < 75 175 200 WE IT R ON MMBZ5V6A Series PPK , PEAK SURGE POWER(W) RECTANGULAR WAVEFORM, TA = 25 C BIDIRECTIONAL 10 1 UNIDIRECTIONAL 0.1 1 10 100 1000 PW, PULSE WIDTH(ms) FIG.7 Maximum Non-repetitive Surge Power, PPK Versus PW Power is defined as VRSM x IZ(pk)where VRSM is the clamping voltage at IZ (pk). WEITRON http://www.weitron.com.tw PPK , PEAK SURGE POWER(W) 100 100 R E C TANGULAR WAVEFORM, TA = 25 C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 100 1000 PW, PULSE WIDTH(ms) FIG.8 Maximum Non-repetitive Surge Power, PPK (NOM)Versus PW Power is defined as VZ (NOM) x I Z(pk)where VZ (NOM) is the nominal Zener voltage measured at the low test current used for voltage classification