AH11 High Dynamic Range Dual Amplifier Applications Mobile Infrastructure Defense / Homeland Security Fixed Wireless SOIC-8 package Product Features Functional Block Diagram 150 – 3000 MHz +44 dBm OIP3 (1900 MHz, balanced circuit) Single-ended performance: 13.5 dB Gain 2.7 dB Noise Figure +21 dBm P1dB Single +5 Volt Supply Lead-free / RoHS-compliant SOIC-8 package General Description Pin Configuration The AH11 is a high linearity amplifier for use in digital communication systems. It combines low noise figure and high intercept point into a low-cost SMT solution. This device extends the linear efficiency advantages of TriQuint’s AH1 to higher power levels by combining two internally matched die. This dual-amplifier configuration allows for the optimal design of balanced or push-pull operation. The amplifier can also be used for single-ended operation in each branch of a diversity receive system. Pin No. Function 1 2, 3, 6, 7 4 5 8 Backside Paddle RF In (Amp 1) RF/DC GND RF In (Amp 2) RF Out (Amp 2) RF Out (Amp 1) RF/DC GND A mature and reliable GaAs MESFET technology is employed to maximize linearity while achieving low noise figure. The SOIC-8 package is lead-free /RoHS-compliant package and is thermally enhanced to achieve an MTTF greater than 100 years at a case temperature of 85C. All devices are 100% RF and DC tested. Ordering Information Part No. Description AH11-G AH11BAL-PCB High Dynamic Range Dual Amplifier 0.6-2.1 GHz Balanced Eval Board Standard T/R size = 500 pieces on a 7” reel. Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 1 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Specifications Recommended Operating Conditions Absolute Maximum Ratings Parameter Rating Parameter -55 to +125 C 4 dB above Input RF Input Power, CW, 50Ω,T = 25ºC P1dB Supply Voltage +6 V Storage Temperature Operation of this device outside the parameter ranges given above may cause permanent damage. Min Typ Max Units Vdd Tch (for >106 hours MTTF) Operating Temp. Range +5 +160 +85 -40 V C o C o Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications (Single-Ended Configuration) Test conditions unless otherwise noted: T = 25 ºC, Supply Voltage = +5 V, Frequency = 800 MHz, 50 System, tested on each singleended amplifier (there are two amplifiers in an AH11 package) Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Conditions Min Typical 150 12.4 See Note 1. See Note 2. Noise Figure Supply Voltage (Vdd) Operating Current (Idd) Thermal Resistance (jnc. to case) +37 120 Max 3000 800 13.5 -8 -15 +21 +41 2.7 5 150 180 29 Units MHz MHz dB dB dB dBm dBm dB V mA C/W Notes: 1. S21 and S11 can be improved in the band of interest with some slight input tuning. 2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression of the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Slight OIP3 degradation of about 2 dB is expected to occur at lower temperatures (from 25 ºC to –40 ºC). Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 2 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Device Characterization Data S-Parameter Data S-Parameters, single unmatched device (2 per package): Vdd = +5 V, 100% IDSS, T = 25 C, 50 system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle) S22 (dB) S22 (ang) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 -2.63 -9.02 -9.98 -10.09 -10.11 -9.98 -9.69 -9.28 -8.86 -8.41 -7.81 -7.26 -6.70 -31.03 -47.58 -61.76 -83.24 -102.89 -122.71 -141.39 -159.83 -175.83 169.88 155.71 143.52 133.22 17.82 14.82 14.31 13.83 13.29 12.76 12.18 11.61 11.06 10.49 9.92 9.41 8.81 162.23 156.18 144.67 132.14 119.28 106.77 94.43 83.21 72.08 61.25 50.78 41.01 31.62 -23.39 -20.06 -20.01 -20.02 -20.11 -20.25 -20.31 -20.53 -20.71 -20.82 -20.98 -21.11 -21.22 47.82 8.90 -1.10 -6.79 -11.57 -14.32 -18.20 -21.39 -24.33 -27.30 -29.62 -31.71 -34.23 -6.12 -16.47 -20.37 -21.92 -21.92 -22.27 -22.53 -22.93 -23.65 -23.68 -23.88 -25.42 -24.24 -36.95 -55.07 -43.85 -31.28 -23.71 -17.24 -17.00 -10.89 -9.69 -13.98 -1.56 -1.60 5.13 Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 3 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Reference Design 600-2100 MHz (AH11BAL-PCB) Bill of Material Ref. Des. Value Q3 Q1, Q2 C1, C2, C4, C5, C8 C3 C6 C7 L1, L2 R1, R2 n/a n/a 56 pF 2.0 pF 4700 pF 0.01 uF 12 nH 50 Ω Description Manufacturer Dual Amplifier, SOIC-8 Package SMT 90 deg. Hybrid Coupler Cap, Chip, 0603, 5%, 50V, NPO Cap, Chip, 0603, +/-0.1 pF, 50V NPO Cap, Chip, 0603, 5%, 50V, X7R Cap, Chip, 0805, 5%, 50V, X7R Ind, Chip, 0603, 5%, Ceramic Res, Chip, 0603, 5% TriQuint Anaren various various various various various various Part Number AH11-G 11305-3 Typical Performance 600-2100 MHz (AH11BAL-PCB) Test conditions unless otherwise noted: Vdd = 5V, Idd = 300 mA, +25 °C Frequency MHz 600 900 1900 2100 Gain Input Return Loss Output Return Loss Noise Figure Output IP2 Output IP3 dB dB dB dB dBm dBm 10.7 -10 -13 7.6 +63 +42 12.2 -10 -18 4.1 +65 +46 11.2 -14 -10 4.2 +65 +44 10.6 -10 -10 5.6 +63 +45 Gain vs. Frequency Return Loss vs. Frequency OIP3 vs. Frequency 50 12 -5 45 9 -10 6 S11 OIP3 (dBm) RL (dB) 0 Gain (dB) 15 -15 S22 25 -25 0 600 900 1200 1500 Frequency (MHz) 1800 Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. 2100 35 30 -20 3 40 600 900 1200 1500 Frequency (MHz) - 4 of 7 - 1800 2100 600 900 1200 1500 1800 2100 Frequency (MHz) Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Pin Description Pin Label Description 1 RF In (Amp 1) RF Input. Requires matching circuit to 50 Ω. See application circuits. 2, 3, 6, 7 Ground RF/DC ground. Provide via path to ground. 4 RF In (Amp 2) RF Input. Requires matching circuit to 50 Ω. See application circuits. 5 RF Out (Amp 2) RF Output. Requires DC blocking capacitor. See application circuits. 8 RF Out (Amp 1) RF Output. Requires DC blocking capacitor. See application circuits. n/a Backside Paddle Use recommended via pattern to minimize inductance and thermal resistance Applications Information PC Board Layouts PCB Material (stackup): 1/2oz. Cu top layer 0.014 inch Nelco N-4000-13 1/2oz. Cu middle layer 1 Core Nelco N-4000-13 1/2 Cu middle layer 2 0.014 inch Nelco N-4000-13 1/2oz. Cu bottom layer Finished board thickness is 0.062±.006 The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, Refer to http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH11 Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 5 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/Green/RoHScompliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260C reflow temperature) and lead (maximum 245C reflow temperature) soldering processes. The component will be marked with an “AH11G” designator with an alphanumeric lot code on the top surface of the package. Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80/.0135”) diameter drill and have a final plated through diameter of .25mm (.010”) 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. To ensure reliable operation, device ground paddle-to-ground pad solder joint is critical. 4. Add mounting screws near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. For optimal thermal performance, expose soldermask on backside where it contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. If the PCB design rules allow, ground vias should be placed under the land pattern for better RF and thermal performance. Otherwise ground vias should be placed as close to the land pattern as possible. 9. All dimensions are in mm. Angles are in degrees. Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 6 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH11 High Dynamic Range Dual Amplifier Product Compliance Information Solderability ESD Information Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 1B Passes from 500 to 1000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating The part is rated Moisture Sensitivity Level 2 at 260°C convection reflow per JEDEC standard IPC/JEDEC J-STD020A. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 0 6/23/11 © 2011 TriQuint Semiconductor, Inc. - 7 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®