Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 1/9 CYStech Electronics Corp. Dual P-Channel Logic Level Enhancement Mode Power MOSFET MTB24B03Q8 Features BVDSS -30V ID @VGS=-10V, TC=25 °C RDSON(MAX)@VGS=-10V, ID=-8A -8A 18mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-6A 27mΩ(typ.) • RDS(ON)=24mΩ(max.)@VGS=-10V, ID=-8A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline SOP-8 MTB24B03Q8 D2 D2 D1 D1 G：Gate D：Drain S：Source Pin 1 S1 G1 S2 G2 Ordering Information Device MTB24B03Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB24B03Q8 CYStek Product Specification Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=-10V, TC=25 °C Continuous Drain Current, VGS=-10V, TC=100 °C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=1mH, ID=-8A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 TA=25°C (Note 3) Power Dissipation TA=100°C Operating Junction and Storage Temperature Range VDS VGS -30 ±25 -8 -6 -32 -12 32 8 2.4 1.3 -55~+175 ID IDM IAS EAS EAR PD Tj ; Tstg Unit V A mJ W °C 100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-8A, Rated VDS=-30V P-CH Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 25 62.5 Unit *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. BVDSS VGS(th) IGSS -30 -1 -8 - -1.5 18 27 13 -2.5 ±100 -1 -10 24 30 - - 24 16.1 6.8 8 - Unit Test Conditions Static IDSS ID(ON) *1 *RDS(ON) *1 GFS *1 Dynamic Qg(VGS=-10V) *1, 2 Qg(VGS=-5V) *1, 2 Qgs *1, 2 Qgd *1, 2 MTB24B03Q8 S VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VGS=±25V VDS =-24V, VGS =0V VDS =-20V, VGS =0V, Tj=125°C VDS =-5V, VGS =-10V VGS =-10V, ID=-8A VGS =-4.5V, ID=-6A VDS =-5V, ID=-8A nC ID=-8A, VDS=-15V, VGS=-10V V nA μA A mΩ CYStek Product Specification CYStech Electronics Corp. td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr *1 Qrr *1 - 9.3 6.1 27 8 2006 200 153 4 - - 32 26 -2.3 -9.2 -1.2 - Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 3/9 ns VDS=-15V, ID=-1A,VGS=-10V, RG=2.7Ω pF VGS=0V, VDS=-15V, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF= IS, VGS=0V IF= IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB24B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -ID, Drain Current (A) 28 -BVDSS, Normalized Drain-Source Breakdown Voltage 32 -VGS=4V 24 10V, 9V, 8V, 7V, 6V, 5V 20 16 12 -VGS=3V 8 1.2 1 0.8 -ID=250μA, VGS=0V 4 0.6 0 0 1 2 3 4 5 6 7 8 -VDS , Drain-Source Voltage(V) 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 -VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 -VGS=2.5V 100 -VGS=3V -VGS=4.5V -VGS=10V 10 0.01 0.1 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 10 -ID, Drain Current(A) 0 100 2 4 6 8 -IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1.6 R DS(on), Normalized Static DrainSource On-State Resistance 300 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID=8A 250 200 150 100 50 -VGS=10V, -ID=8A 1.4 1.2 1 0.8 0.6 RDSON@Tj=25C : 18m Ω 0.4 0 0 MTB24B03Q8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 1.6 -ID=250μA 1.4 1.2 1 0.8 0.6 0.4 100 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VDS=-15V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 10 1 -VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=-10V VDS=-5V 6 4 2 ID=-8A 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 100μs 10 1ms 10ms 1 1s TA=25°C, Tj=175°C VGS=10V, θJA=125°C/W Single Pulse 100ms DC 24 28 9 8 7 6 5 4 TA=25°C -VGS=10V RθJA=78°C/W 3 2 1 0 0.01 MTB24B03Q8 -ID, Maximum Drain Current(A) RDSON Limited 0.01 8 12 16 20 Qg, Total Gate Charge(nC) 10 100 0.1 4 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area -ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 1000 Typical Transfer Characteristics 32 VDS=10V 28 Power (W) ID, Drain Current(A) TJ(MAX) =175°C TA=25°C θJA=125°C/W 100 10 1 24 20 16 12 8 4 0.1 0.0001 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 0 1000 2 4 6 VGS, Gate-Source Voltage(V) 8 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=125°C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB24B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB24B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB24B03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 9/9 SOP-8 Dimension Right side View G Top View A Marking: I C B H Device Name Date Code J K E D Front View Part A Part A M L N 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 O F *: Typical Inches Min. Max. 0.1850 0.2007 0.1457 0.1614 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 0.0472 0.0638 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.70 5.10 3.70 4.10 5.80 6.20 1.27* 0.33 0.51 3.74 3.88 1.20 1.62 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0031 0.0110 0.0157 0.0323 0.0074 0.0102 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.08 0.28 0.40 0.83 0.19 0.26 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB24B03Q8 CYStek Product Specification