STMicroelectronics M25PE80 8 mbit, low-voltage, page-erasable serial flash memory with byte alterability, 50mhz spi bus, standard pinout Datasheet

M25PE80
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with
byte alterability, 50 MHz SPI bus, standard pinout
Features
■
SPI bus compatible serial interface
■
8-Mbit Page-Erasable Flash memory
■
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
■
SubSector Erase (4 Kbytes)
■
Sector Erase (64 Kbytes)
■
Bulk Erase (8 Mbits)
■
2.7 V to 3.6 V single supply voltage
■
50 MHz clock rate (maximum)
■
Deep Power-down mode 1 µA (typical)
■
Electronic Signature
– JEDEC standard two-byte signature
(8014h)
■
Software Write Protection on a 64 Kbyte sector
basis
■
Hardware Write Protection of the memory area
selected using the BP0, BP1 and BP2 bits
■
More than 100 000 Write cycles
■
More than 20 year data retention
■
Packages
– ECOPACK® (RoHS compliant)
January 2007
VFQFPN8 (MP)
6 x 5mm (MLP8)
SO8W (MW)
208 mils width
SO8N (MN)
150 mils width
Rev 6
1/61
1
Contents
M25PE80
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Important note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1
Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2
Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4
Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.5
Reset (Reset) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.6
Write Protect (W) or Top Sector Lock (TSL) . . . . . . . . . . . . . . . . . . . . . . . . 9
2.7
VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.8
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
Sharing the overhead of modifying data . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2
An easy way to modify data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3
A fast way to modify data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4
Polling during a Write, Program or Erase cycle . . . . . . . . . . . . . . . . . . . . 13
4.5
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.6
Active Power, Standby Power and Deep Power-Down modes . . . . . . . . . 13
4.7
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.8
Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.8.1
Protocol-related protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.8.2
Specific Hardware and Software protections . . . . . . . . . . . . . . . . . . . . . 15
5
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/61
6.1
Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.2
Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.3
Read Identification (RDID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
M25PE80
Contents
6.4
Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.4.1
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.4.2
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.4.3
BP2, BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.4.4
SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.5
Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6.6
Read Data Bytes (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6.7
Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . . 29
6.8
Read Lock Register (RDLR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.9
Page Write (PW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
6.10
Page Program (PP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.11
Write to Lock Register (WRLR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.12
Page Erase (PE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.13
SubSector Erase (SSE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
6.14
Sector Erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
6.15
Bulk Erase (BE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
6.16
Deep Power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
6.17
Release from Deep Power-down (RDP) . . . . . . . . . . . . . . . . . . . . . . . . . . 43
7
Power-up and Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
8
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
9
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
10
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
11
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
12
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
13
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
3/61
List of tables
M25PE80
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
4/61
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Software protection truth table (Sectors 0 to 15, 64-Kbyte granularity) . . . . . . . . . . . . . . . 16
Not for new design: TY7 process only, Software protection scheme truth
table (Sectors 0 and 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Protected area sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Read Identification (RDID) data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Protection modes (T9HX process only, see Important note on page 6) . . . . . . . . . . . . . . . 27
Lock Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Not for new design: Lock Registers for the M25PE80 in T7Y process
(see Important note on page 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Lock Register In . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Not for new design: Lock Registers for the M25PE80 in T7Y process . . . . . . . . . . . . . . . . 37
Power-Up timing and VWI threshold. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Device status after a Reset Low pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
AC characteristics (T9HX (0.11µm) Process, see Important note on page 6) . . . . . . . . . . 51
Reset conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Timings after a Reset Low pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
VFQFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, 6 × 5 mm,
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
SO8 wide – 8 lead Plastic Small Outline, 208 mils body width, mechanical data. . . . . . . . 56
SO8N - 8 lead Plastic Small Outline, 150 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
M25PE80
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Logic diagram - previous T7Y process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic diagram - new T9HX process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
VFQFPN and SO connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Write Enable (WREN) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Write Disable (WRDI) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Read Identification (RDID) instruction sequence and data-out sequence . . . . . . . . . . . . . 23
Read Status Register (RDSR) instruction sequence and data-out sequence . . . . . . . . . . 25
Write Status Register (WRSR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Read Data Bytes (READ) instruction sequence and data-out sequence . . . . . . . . . . . . . . 28
Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Read Lock Register (RDLR) instruction sequence and data-out Sequence. . . . . . . . . . . . 31
Page Write (PW) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Page Program (PP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Write to Lock Register (WRLR) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Page Erase (PE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
SubSector Erase (SSE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Sector Erase (SE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
bulk erase (be) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Deep Power-down (DP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Release from Deep Power-down (RDP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . 43
Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Top Sector Lock (T7Y process) or Write Protect (T9HX process) setup and hold
timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Reset ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
VFQFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, 6 × 5 mm,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
SO8 wide – 8 lead Plastic Small Outline, 208 mils body width, package outline . . . . . . . . 56
SO8N - 8 lead Plastic Small Outline, 150 mils body width, package outline . . . . . . . . . . . 57
5/61
Description
1
M25PE80
Description
The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high
speed SPI-compatible bus.
The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write
or Page Program instruction. The Page Write instruction consists of an integrated Page
Erase cycle followed by a Page Program cycle.
The memory is organized as 16 sectors that are further divided up into 16 subsectors each
(256 subsectors in total). Each sector contains 256 pages and each subsector contains 16
pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting
of 4096 pages, or 1 048 576 bytes
The memory can be erased a page at a time, using the Page Erase instruction, a subsector
at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase
instruction, or as a whole, using the Bulk Erase instruction.
The memory can be Write Protected by either Hardware or Software using a mix of volatile
and non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
In order to meet environmental requirements, ST offers the M25PE80 in ECOPACK®
packages. ECOPACK® packages are Lead-Free and RoHS compliant.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Important note
This datasheet details the functionality of the M25PE80 devices, based on the previous T7Y
process or based on the current T9HX process. Delivery of parts in T9HX process starts
from June 2007.
What are the changes?
The M25PE80 in T9HX process offers the following additional features:
●
the whole memory array is partitioned into 4-Kbyte subsectors
●
two new instructions: Write Status Register (WRSR) and 4-Kbyte SubSector Erase
(SSE)
●
Status Register: 4 bits can be written (BP0, BP1, BP2, SRWD)
●
WP input (pin 3): Write protection limits are extended, depending on the value of the
BP0, BP1, BP2, SRWD bits. The WP Write protection remains the same if bits (BP2,
BP1, BP0) are set to (0, 0, 1).
●
smaller die size allowing assembly into an SO8N package
Suppressed feature:
●
The Write protection (defined by the WL and LD lock bits) of the 4-Kbyte SubSectors in
the top and bottom sectors is no longer offered.
For more details please refer to PCNMPG062148.
6/61
M25PE80
Description
Figure 1.
Logic diagram - previous T7Y Figure 2.
process
Logic diagram - new T9HX
process
VCC
VCC
D
D
Q
C
C
S
S
M25PE80
TSL
W
Reset
Reset
VSS
Table 1.
Q
M25PE80
VSS
AI10779
AI13557
Signal names
Signal name
Function
Direction
C
Serial Clock
Input
D
Serial Data
Input
Q
Serial Data
Output
S
Chip Select
Input
TSL or W(1)
Top Sector Lock or Write Protect
Input
Reset
Reset
Input
VCC
Supply voltage
Input
VSS
Ground
1. In the previous T7Y process the pin is a Top Sector Lock input whereas in the new T9HX process, the pin
is a Write Protect input (see Figure 1 and Figure 2).
Figure 3.
VFQFPN and SO connections
M25PE80
S
Q
TSL or W
VSS
1
2
3
4
8
7
6
5
VCC
Reset
C
D
AI10780b
1. There is an exposed central pad on the underside of the MLP8 package. This is pulled, internally, to VSS,
and must not be allowed to be connected to any other voltage or signal line on the PCB.
2. See Package mechanical section for package dimensions, and how to identify pin-1.
7/61
Signal description
2
Signal description
2.1
Serial Data Output (Q)
M25PE80
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are latched on the rising edge of Serial
Clock (C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal Read, Program, Erase or Write cycle is in progress, the
device will be in the Standby mode (this is not the Deep Power-down mode). Driving Chip
Select (S) Low selects the device, placing it in the Active Power mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Reset (Reset)
The Reset (Reset) input provides a hardware reset for the memory.
When Reset (Reset) is driven High, the memory is in the normal operating mode. When
Reset (Reset) is driven Low, the memory will enter the Reset mode. In this mode, the output
is high impedance.
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
8/61
M25PE80
2.6
Signal description
Write Protect (W) or Top Sector Lock (TSL)
●
The Write Protect function is available in the T9HX process only (see Important
note on page 6).
The Write Protect (W) input is used to freeze the size of the area of memory that is
protected against write, program and erase instructions (as specified by the values in
the BP2, BP1 and BP0 bits of the Status Register. See Section 6.4: Read Status
Register (RDSR) for a description of these bits).
●
The Top Sector Lock function is available in the T7Y process only (see Important
note on page 6).
The input signal sets the device in the Hardware Protected mode, when Top Sector
Lock (TSL) is connected to VSS, causing the top 256 pages (upper addresses) of the
memory to become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to VCC, the top 256 pages of memory
behave like the other pages of memory.
2.7
VCC supply voltage
VCC is the supply voltage.
2.8
VSS ground
VSS is the reference for the VCC supply voltage.
9/61
SPI modes
3
M25PE80
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
●
CPOL=0, CPHA=0
●
CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 5, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
●
C remains at 0 for (CPOL=0, CPHA=0)
●
C remains at 1 for (CPOL=1, CPHA=1)
Figure 4.
Bus master and memory devices on the SPI bus
VSS
VCC
R
SDO
SPI Interface with
SDI
(CPOL, CPHA) =
SCK
(0, 0) or (1, 1)
C Q D
VCC
SPI Bus Master
SPI Memory
Device
R
CS3
C Q D
VCC
VSS
C Q D
VCC
VSS
SPI Memory
Device
R
VSS
SPI Memory
Device
R
CS2 CS1
S
W HOLD
or
TSL
S
W HOLD
or
TSL
S
HOLD
W
or
TSL
AI13558
1. The Top Sector Lock (TSL) signal in the T7Y process, or the Write Protect (W) signal in the T9HX process,
should be driven, High or Low as appropriate.
Figure 4 shows an example of three devices connected to an MCU, on an SPI bus. Only one
device is selected at a time, so only one device drives the Serial Data Output (Q) line at a
time, the other devices are high impedance. Resistors R (represented in Figure 4) ensure
that the M25PE80 is not selected if the Bus Master leaves the S line in the high impedance
state. As the Bus Master may enter a state where all inputs/outputs are in high impedance
at the same time (for example, when the Bus Master is reset), the clock line (C) must be
connected to an external pull-down resistor so that, when all inputs/outputs become high
impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S and
C do not become High at the same time, and so, that the tSHCH requirement is met). The
typical value of R is 100 kΩ, assuming that the time constant R*Cp (Cp = parasitic
capacitance of the bus line) is shorter than the time during which the Bus Master leaves the
SPI bus in high impedance.
10/61
M25PE80
SPI modes
Example: Cp = 50 pF, that is R*Cp = 5 µs <=> the application must ensure that the Bus
Master never leaves the SPI bus in the high impedance state for a time period shorter than
5 µs.
Figure 5.
CPOL
SPI modes supported
CPHA
0
0
C
1
1
C
D
Q
MSB
MSB
AI01438B
11/61
Operating features
4
Operating features
4.1
Sharing the overhead of modifying data
M25PE80
To write or program one (or more) data Bytes, two instructions are required: Write Enable
(WREN), which is one Byte, and a Page Write (PW) or Page Program (PP) sequence, which
consists of four Bytes plus data. This is followed by the internal cycle (of duration tPW or tPP).
To share this overhead, the Page Write (PW) or Page Program (PP) instruction allows up to
256 Bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1)
at a time, provided that they lie in consecutive addresses on the same page of memory.
4.2
An easy way to modify data
The Page Write (PW) instruction provides a convenient way of modifying data (up to 256
contiguous Bytes at a time), and simply requires the start address, and the new data in the
instruction sequence.
The Page Write (PW) instruction is entered by driving Chip Select (S) Low, and then
transmitting the instruction Byte, three address Bytes (A23-A0) and at least one data Byte,
and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data
Bytes are written to the data buffer, starting at the address given in the third address Byte
(A7-A0). When Chip Select (S) is driven High, the Write cycle starts. The remaining,
unchanged, Bytes of the data buffer are automatically loaded with the values of the
corresponding Bytes of the addressed memory page. The addressed memory page then
automatically put into an Erase cycle. Finally, the addressed memory page is programmed
with the contents of the data buffer.
All of this buffer management is handled internally, and is transparent to the user. The user
is given the facility of being able to alter the contents of the memory on a Byte-by-Byte basis.
For optimized timings, it is recommended to use the Page Write (PW) instruction to write all
consecutive targeted Bytes in a single sequence versus using several Page Write (PW)
sequences with each containing only a few Bytes (see Page Write (PW) section and
Table 21: AC characteristics).
12/61
M25PE80
4.3
Operating features
A fast way to modify data
The Page Program (PP) instruction provides a fast way of modifying data (up to 256
contiguous Bytes at a time), provided that it only involves resetting bits to 0 that had
previously been set to 1.
This might be:
●
when the designer is programming the device for the first time
●
when the designer knows that the page has already been erased by an earlier Page
Erase (PE), SubSector Erase (SSE), Sector Erase (SE) or Bulk Erase (BE) instruction.
This is useful, for example, when storing a fast stream of data, having first performed
the erase cycle when time was available
●
when the designer knows that the only changes involve resetting bits to 0 that are still
set to 1. When this method is possible, it has the additional advantage of minimizing the
number of unnecessary erase operations, and the extra stress incurred by each page
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted Bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few Bytes (see Page Program (PP)
section and Table 21: AC characteristics).
4.4
Polling during a Write, Program or Erase cycle
A further improvement in the write, program or erase time can be achieved by not waiting for
the worst case delay (tPW, tPP, tPE, tSSE, tSE or tBE). The Write In Progress (WIP) bit is
provided in the Status Register so that the application program can monitor its value, polling
it to establish when the previous cycle is complete.
4.5
Reset
An internal Power-On Reset circuit helps protect against inadvertent data writes. Addition
protection is provided by driving Reset (RESET) Low during the Power-on process, and only
driving it High when VCC has reached the correct voltage level, VCC(min).
4.6
Active Power, Standby Power and Deep Power-Down modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the Active Power
mode until all internal cycles have completed (Program, Erase, Write). The device then goes
in to the Standby Power mode. The device consumption drops to ICC1.
The Deep Power-down mode is entered when the specific instruction (the Deep Powerdown (DP) instruction) is executed. The device consumption drops further to ICC2. When in
this mode, only the Release from Deep Power-down instruction is accepted. All other
instructions are ignored. The device remains in the Deep Power-down mode until the
Release from Deep Power-down instruction is executed. This can be used as an extra
software protection mechanism, when the device is not in active use, to protect the device
from inadvertent Write, Program or Erase instructions.
13/61
Operating features
4.7
M25PE80
Status Register
The Status Register contains a number of status and control bits that can be read or set (as
appropriate) by using specific instructions. See Section 6.4: Read Status Register (RDSR)
for a detailed description of the Status Register bits.
4.8
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this, the
M25PE80 features the following data protection mechanisms:
4.8.1
Protocol-related protections
●
Power On Reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
●
Program, Erase and Write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution.
●
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–
14/61
Power-up
–
Reset (RESET) driven Low
–
Write Disable (WRDI) instruction completion
–
Page Write (PW) instruction completion
–
Page Program (PP) instruction completion
–
Write to Lock Register (WRLR) instruction completion
–
Page Erase (PE) instruction completion
–
SubSector Erase (SSE) instruction completion
–
Sector Erase (SE) instruction completion
–
Bulk Erase (BE) instruction completion
●
The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of Program and Write cycles, the designer should refer to
Section 6.5: Write Status Register (WRSR), Section 6.9: Page Write (PW),
Section 6.10: Page Program (PP), Section 6.12: Page Erase (PE), Section 6.14: Sector
Erase (SE) and Section 6.13: SubSector Erase (SSE), and to Table 15: Device status
after a Reset Low pulse.
●
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions while
the device is not in active use.
M25PE80
4.8.2
Operating features
Specific Hardware and Software protections
The M25PE80 features a Hardware Protected mode, HPM, and two Software Protected
modes, SPM1 and SPM2, that can be combined to protect the memory array as required.
They are described below:
HPM
●
HPM in T7Y process (see Important note on page 6):
The Hardware Protected mode (HPM) is entered when Top Sector Lock (TSL) is driven
Low, causing the top 256 pages of memory to become read-only. When Top Sector
Lock (TSL) is driven High, the top 256 pages of memory behave like the other pages of
memory and the protection depends on the Block Protect bits (see SPM2 below).
●
HPM in T9HX process (see Important note on page 6):
The Hardware Protected mode (HPM) is used to write-protect the non-volatile bits of
the Status Register (that is, the Block Protect bits, BP2, BP1 and BP0, and the Status
Register Write Disable bit, SRWD).
HPM is entered by driving the Write Protect (W) signal Low with the SRWD bit set to
High. This additional protection allows the Status Register to be hardware-protected.
(see also Section 6.4.4: SRWD bit)
SPM1 and SPM2
●
The first Software Protected mode (SPM1) is managed by specific Lock Registers
assigned to each 64-Kbyte sector.
The Lock Registers can be read and written using the Read Lock Register (RDLR) and
Write to Lock Register (WRLR) instructions.
In each Lock Register two bits control the protection of each sector: the Write Lock Bit
and the Lock Down Bit.
–
Write Lock Bit:
The Write Lock Bit determines whether the contents of the sector can be modified
(using the Write, Program or Erase instructions). When the Write Lock Bit is set,
‘1’, the sector is write protected – any operations that attempt to change the data
in the sector will fail. When the Write Lock Bit is reset to ‘0’, the sector is not write
protected by the Lock Register, and may be modified.
–
Lock Down Bit:
The Lock Down Bit provides a mechanism for protecting software data from simple
hacking and malicious attack. When the Lock Down Bit is set, ‘1’, further
modification to the Write Lock and Lock Down Bits cannot be performed. A reset,
or power-up, is required before changes to these bits can be made. When the
Lock Down Bit is reset, ‘0’, the Write Lock and Lock Down Bits can be changed.
The Write Lock Bit and the Lock Down Bit are volatile and their value is reset to ‘0’ after
a Power-Down or a Reset.
The definition of the Lock Register bits is given in Table 11: Not for new design: Lock
Registers for the M25PE80 in T7Y process (see Important note on page 6).
15/61
Operating features
Table 2.
M25PE80
Software protection truth table (Sectors 0 to 15, 64-Kbyte granularity)
Sector Lock Register
Protection Status
Lock
Down Bit
Write
Lock Bit
0
0
Sector Unprotected from Program/Erase/Write operations, Protection Status Reversible
0
1
Sector Protected from Program/Erase/Write operations, Protection Status Reversible
1
0
Sector Unprotected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
1
1
Sector Protected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
Table 3.
Not for new design: TY7 process only, Software protection scheme truth
table (Sectors 0 and 15)(1) (2) (3)
Sector Lock
Register
Lock
Down
Bit
Write
Lock
Bit
Subsector
Lock Register
Protection Status
Lock
Down
Bit
Write
Lock
Bit
0
0
Current subsector Unprotected from Program/Erase/Write operations,
Current subsector Protection Status Reversible
0
1
Current subsector Protected from Program/Erase/Write operations,
Current subsector Protection Status Reversible.
1
0
Current subsector Unprotected from Program/Erase/Write operations, Current
subsector Protection Status cannot be changed except by a Reset or Power-up.
1
1
Current subsector Protected from Program/Erase/Write operations, Current
subsector Protection Status cannot be changed except by a Reset or Power-up.
0
1
All subsectors Protected from Program/Erase/Write operations, Current
subsector Protection Status Reversible
1
1
All subsectors Protected from Program/Erase/Write operations, Current
subsector Protection Status cannot be changed except by a Reset or Power-up.
1
0
Current subsector Unprotected from Program/Erase/Write operations, All
subsectors Protection Status cannot be changed except by a Reset or Power-up
1
1
Current subsector Protected from Program/Erase/Write operations, All
subsectors Protection Status cannot be changed except by a Reset or Power-up
1
1
All subsectors Protected with their Protection Status cannot be changed except
by a Reset or Power-up.
0
0
1
0
1
1
1. All other bit combinations are not-applicable.
2. For more details, refer to the description of the Write to Lock Register (WRLR) instruction.
3. See Important note on page 6 for differences between devices produced in T7Y and T9HX processes.
16/61
M25PE80
Operating features
The second Software Protected mode (SPM2) uses the Block Protect (BP2, BP1,
BP0, see Section 6.4.3) bits to allow part of the memory to be configured as read-only.
●
Table 4.
Protected area sizes
Status Register
content
Memory content
BP2 BP1 BP0
bit
bit
bit
Protected area
Unprotected area
0
0
0
none
All sectors(1) (sixteen sectors: 0 to 15)
0
0
1
Upper sixteenth (Sector 15)
Lower fifteen-sixteenths (fifteen sectors:
0 to 14)
0
1
0
Upper eighth (two sectors: 14 and 15)
Lower seven-eighths (fourteen sectors:
0 to 13)
0
1
1
Upper quarter (four sectors: 12 to 15)
Lower three-quarters (twelve sectors: 0
to 11)
1
0
0
Upper half (eight sectors: 8 to 15)
Lower half (eight sectors: 0 to 7)
1
0
1
All sectors (sixteen sectors: 0 to 15)
none
1
1
0
All sectors (sixteen sectors: 0 to 15)
none
1
1
1
All sectors (sixteen sectors: 0 to 15)
none
1. The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are
0.
17/61
Memory organization
5
M25PE80
Memory organization
The memory is organized as:
●
4096 pages (256 bytes each).
●
1,048,576 Bytes (8 bits each)
●
16 sectors (512 Kbits, 65536 bytes each)
●
256 subsectors (32 Kbits, 4096 bytes each)
Each page can be individually:
●
programmed (bits are programmed from 1 to 0)
●
erased (bits are erased from 0 to 1)
●
written (bits are changed to either 0 or 1)
The device is Page, Sector or Bulk Erasable (bits are erased from 0 to 1).
Memory organization
18/61
...
...
...
...
F0000h
F0FFFh
128
80000h
80FFFh
239
EF000h
EFFFFh
127
7F000h
7FFFFh
...
...
70000h
70FFFh
223
DF000h
DFFFFh
111
6F000h
6FFFFh
6
...
...
112
...
...
E0FFFh
...
...
E0000h
...
...
7
224
208
D0000h
D0FFFh
96
60000h
60FFFh
207
CF000h
CFFFFh
95
5F000h
5FFFFh
...
...
...
...
...
5
192
C0000h
C0FFFh
80
50000h
50FFFh
191
BF000h
BFFFFh
79
4F000h
4FFFFh
...
...
...
4
176
B0000h
B0FFFh
64
40000h
40FFFh
175
AF000h
AFFFFh
63
3F000h
3FFFFh
...
30FFFh
159
9F000h
9FFFFh
47
2F000h
2FFFFh
144
90000h
90FFFh
2
...
30000h
...
48
...
A0FFFh
...
A0000h
...
160
...
...
3
...
10
9
8FFFFh
...
11
8
8F000h
...
12
143
240
...
13
FFFFFh
Address Range
...
14
FF000h
Sector Subsector
...
15
...
255
Address Range
...
Sector Subsector
...
Table 5.
32
20000h
20FFFh
M25PE80
Memory organization
Table 5.
Memory organization (continued)
Sector Subsector
...
...
0FFFFh
16
10000h
10FFFh
4
04000h
04FFFh
0
Figure 6.
0F000h
...
15
...
1FFFFh
Address Range
...
1
1F000h
Sector Subsector
...
31
Address Range
3
03000h
03FFFh
2
02000h
02FFFh
1
01000h
01FFFh
0
00000h
00FFFh
Block diagram
Reset
TSL or W
High Voltage
Generator
Control Logic
S
C
D
I/O Shift Register
Q
Address Register
and Counter
Status
Register
256 Byte
Data Buffer
FFFFFh
Top 256 Pages can
be made read-only
by using the TSL pin(1)
F0000h
Y Decoder
Whole Memory Array can
be made read-only
on a 64 Kbyte or 4 Kbyte(1)
basis through the Lock
Registers
00000h
000FFh
256 Bytes (Page Size)
X Decoder
AI13560
1. These features (in gray) are only available in the T7Y process.
19/61
Instructions
6
M25PE80
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-Byte instruction code must be shifted in to the device, most
significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in Table 6.
Every instruction sequence starts with a one-Byte instruction code. Depending on the
instruction, this might be followed by address Bytes, or by data Bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Identification (RDID), Read Status Register (RDSR), or Read Lock Register (RDLR)
instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip
Select (S) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Page Write (PW), Page Program (PP), Write to Lock Register (WRLR),
Page Erase (PE), SubSector Erase (SSE), Sector Erase (SE), Bulk Erase (BE), Write
Enable (WREN), Write Disable (WRDI), Write Status Register (WRSR), Deep Power-down
(DP) or Release from Deep Power-down (RDP) instruction, Chip Select (S) must be driven
High exactly at a Byte boundary, otherwise the instruction is rejected, and is not executed.
That is, Chip Select (S) must driven High when the number of clock pulses after Chip Select
(S) being driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write cycle, Program cycle or Erase cycle
are ignored, and the internal Write cycle, Program cycle or Erase cycle continues
unaffected.
20/61
M25PE80
Instructions
Table 6.
Instruction set
Instruction
Description
One-Byte Instruction
Code
Address Dummy
Bytes
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
RDID
Read Identification
1001 1111
9Fh
0
0
1 to 3
RDSR
Read Status Register
0000 0101
05h
0
0
1 to ∞
WRLR
Write to Lock Register
1110 0101
E5h
3
0
1
Write Status Register
0000 0001
01h
0
0
1
RDLR
Read Lock Register
1110 1000
E8h
3
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to ∞
Read Data Bytes at
Higher Speed
0000 1011
0Bh
3
1
1 to ∞
PW
Page Write
0000 1010
0Ah
3
0
1 to 256
PP
Page Program
0000 0010
02h
3
0
1 to 256
PE
Page Erase
1101 1011
DBh
3
0
0
SubSector Erase
0010 0000
20h
3
0
0
SE
Sector Erase
1101 1000
D8h
3
0
0
BE
Bulk Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
RDP
Release from Deep
Power-down
1010 1011
ABh
0
0
0
(1)
WRSR
FAST_READ
(1)
SSE
1. Instruction available only in the T9HX process (see Important note on page 6).
6.1
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Write (PW), Page
Program (PP), Page Erase (PE), Sector Erase (SE), Bulk Erase (BE) and Write to Lock
Register (WRLR) instructions.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
21/61
Instructions
M25PE80
Figure 7.
Write Enable (WREN) instruction sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI02281E
6.2
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 8) resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
●
Power-up
●
Write Disable (WRDI) instruction completion
●
Page Write (PW) instruction completion
●
Page Program (PP) instruction completion
●
Write to Lock Register (WRLR) instruction completion
●
Page Erase (PE) instruction completion
●
Sector Erase (SE) instruction completion
●
Bulk Erase (BE) instruction completion
Figure 8.
Write Disable (WRDI) instruction sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI03750D
22/61
M25PE80
6.3
Instructions
Read Identification (RDID)
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be
read, followed by two Bytes of device identification. The manufacturer identification is
assigned by JEDEC, and has the value 20h for STMicroelectronics. The device identification
is assigned by the device manufacturer, and indicates the memory type in the first Byte
(80h), and the memory capacity of the device in the second Byte (14h).
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is
not decoded, and has no effect on the cycle that is in progress.
The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code
for the instruction is shifted in. This is followed by the 24-bit device identification, stored in
the memory, being shifted out on Serial Data Output (Q), each bit being shifted out during
the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 9.
The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at
any time during data output.
When Chip Select (S) is driven High, the device is put in the Stand-by Power mode. Once in
the Stand-by Power mode, the device waits to be selected, so that it can receive, decode
and execute instructions.
Table 7.
Read Identification (RDID) data-out sequence
Device Identification
Manufacturer Identification
20h
Figure 9.
Memory Type
Memory Capacity
80h
14h
Read Identification (RDID) instruction sequence and data-out sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
28 29 30 31
C
Instruction
D
Manufacturer Identification
Device Identification
High Impedance
Q
15 14 13
MSB
3
2
1
0
MSB
AI06809b
23/61
Instructions
6.4
M25PE80
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The
Status Register may be read at any time, even while a Program, Erase or Write cycle is in
progress. When one of these cycles is in progress, it is recommended to check the Write In
Progress (WIP) bit before sending a new instruction to the device. It is also possible to read
the Status Register continuously, as shown in Figure 10.
The status bits of the Status Register are as follows:
6.4.1
WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write, Program
or Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such cycle is
in progress.
6.4.2
WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable
Latch is reset and no Write, Program or Erase instruction is accepted.
6.4.3
BP2, BP1, BP0 bits
The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the area to
be software protected against Program and Erase instructions. These bits are written with
the Write Status Register (WRSR) instruction. When one or more of the Block Protect (BP2,
BP1, BP0) bits is set to 1, the relevant memory area (as defined in Table 4) becomes
protected against Page Program (PP), Sector Erase (SE) and SubSector Erase (SSE)
instructions. The Block Protect (BP2, BP1, BP0) bits can be written provided that the
Hardware Protected mode has not been set. The Bulk Erase (BE) instruction is executed if,
and only if:
6.4.4
●
all Block Protect (BP2, BP1, BP0) bits are 0
●
the Lock Register protection bits are not all set (‘1’)
SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W) signal. When the Status Register Write Disable (SRWD) bit is set to 1, and Write
Protect (W) is driven Low, the non-volatile bits of the Status Register (SRWD, BP2, BP1,
BP0) become read-only bits. In such a state, as the Write Status Register (WRSR)
instruction is no longer accepted for execution, the definition of the size of the Write
Protected area cannot be further modified.
Table 8.
Status Register format(1) (2) (3)
b7
SRWD
b0
0
0
BP2
BP1
BP0
WEL
WIP
1. WEL (Write Enable Latch) and WIP ((Write In Program) are volatile read-only bits (WEL is set and reset by
specific instructions; WIP is automatically set and reset by the internal logic of the device).
2. SRWD = Status Register Write Protect bit; BP0, BP1, BP2 = Block Protect Bits.
3. The BP bits and the SRWD bit exist only in the T9HX process.
24/61
M25PE80
Instructions
Figure 10. Read Status Register (RDSR) instruction sequence and data-out
sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
D
Status Register Out
Status Register Out
High Impedance
Q
7
MSB
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
AI02031E
25/61
Instructions
6.5
M25PE80
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register.
Note:
The Status Register BPi and SRWD bits are available in the M25PE80 in the T9HX process
only. See Important note on page 6 for more details.
Before the Write Status Register (WRSR) instruction can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN)
instruction has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code and the data byte on Serial Data Input (D).
The instruction sequence is shown in Figure 11.
The Write Status Register (WRSR) instruction has no effect on b6, b5, b1 and b0 of the
Status Register. b6 and b5 are always read as 0.
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select
(S) is driven High, the self-timed Write Status Register cycle (whose duration is tW) is
initiated. While the Write Status Register cycle is in progress, the Status Register may still
be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the
Block Protect (BP2, BP1, BP0) bits, to define the size of the area that is to be treated as
read-only, as defined in Table 4. The Write Status Register (WRSR) instruction also allows
the user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the
Write Protect (W) signal (see Section 6.4.4).
If a Write Status Register (WRSR) instruction is interrupted by a Reset Low pulse, the
internal cycle of the Write Status Register operation (whose duration is tW) is first completed
(provided that the supply voltage VCC remains within the operating range). After that the
device enters the Reset mode (see also Table 15: Device status after a Reset Low pulse
and Table 24: Timings after a Reset Low pulse).
Figure 11. Write Status Register (WRSR) instruction sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
Status
Register In
7
D
High Impedance
6
5
4
3
2
1
0
MSB
Q
AI02282D
26/61
M25PE80
Instructions
Table 9.
Protection modes (T9HX process only, see Important note on page 6)
W
SRWD
Signal
Bit
1
Write Protection of the
Status Register
Second
Software
Protected
(SPM2)
Status Register is Writable
(if the WREN instruction
has set the WEL bit)
The values in the SRWD,
BP2, BP1 and BP0 bits
can be changed
0
0
0
1
1
0
Mode
1
Status Register is
Hardware Hardware write protected
Protected The values in the SRWD,
(HPM) BP2, BP1 and BP0 bits
cannot be changed
Memory Content
Protected Area(1)
Unprotected Area(1)
Protected against
Page Program,
Sector Erase and
Bulk Erase
Ready to accept
Page Program and
Sector Erase
instructions
Protected against
Page Program,
Sector Erase and
Bulk Erase
Ready to accept
Page Program and
Sector Erase
instructions
1. As defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status Register, as shown in
Table 4.
The protection features of the device are summarized in Table 9.
When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial
delivery state), it is possible to write to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless
of the whether Write Protect (W) is driven High or Low.
When the Status Register Write Disable (SRWD) bit of the Status Register is set to 1, two
cases need to be considered, depending on the state of Write Protect (W):
●
If Write Protect (W) is driven High, it is possible to write to the Status Register provided
that the Write Enable Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction.
●
If Write Protect (W) is driven Low, it is not possible to write to the Status Register even
if the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN)
instruction. (Attempts to write to the Status Register are rejected, and are not accepted
for execution). As a consequence, all the data bytes in the memory area that are
software protected (SPM2) by the Block Protect (BP2, BP1, BP0) bits of the Status
Register, are also hardware protected against data modification.
Regardless of the order of the two events, the Hardware Protected Mode (HPM) can be
entered:
●
by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (W)
Low
●
or by driving Write Protect (W) Low after setting the Status Register Write Disable
(SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM) once entered is to pull Write
Protect (W) High.
If Write Protect (W) is permanently tied High, the Hardware Protected Mode (HPM) can
never be activated, and only the Software Protected Mode (SPM2), using the Block Protect
(BP2, BP1, BP0) bits of the Status Register, can be used.
27/61
Instructions
6.6
M25PE80
Read Data Bytes (READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes (READ) instruction is followed by a 3-Byte address (A23-A0), each bit being
latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that
address, is shifted out on Serial Data Output (Q), each bit being shifted out, at a maximum
frequency fR, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 12.
The first Byte addressed can be at any location. The address is automatically incremented
to the next higher address after each Byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ) instruction. When the highest
address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip
Select (S) can be driven High at any time during data output. Any Read Data Bytes (READ)
instruction, while an Erase, Program or Write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
Figure 12. Read Data Bytes (READ) instruction sequence and data-out sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
1
0
MSB
Data Out 1
High Impedance
Q
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
AI03748D
1. Address bits A23 to A20 are Don’t Care.
28/61
M25PE80
6.7
Instructions
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-Byte address (A23A0) and a dummy Byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each
bit being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 13.
The first Byte addressed can be at any location. The address is automatically incremented
to the next higher address after each Byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
Figure 13. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
C
Instruction
24 BIT ADDRESS
23 22 21
D
3
2
1
0
High Impedance
Q
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy Byte
D
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
Q
7
MSB
6
5
4
3
2
1
0
7
MSB
6
5
4
3
2
1
0
7
MSB
AI04006
1. Address bits A23 to A20 are Don’t Care.
29/61
Instructions
6.8
M25PE80
Read Lock Register (RDLR)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Lock Register (RDLR) instruction is followed by a 3-Byte address (A23-A0) pointing to any
location inside the concerned sector (or subsector). Each address bit is latched-in during
the rising edge of Serial Clock (C). Then the value of the Lock Register is shifted out on
Serial Data Output (Q), each bit being shifted out, at a maximum frequency fC, during the
falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 14.
The Read Lock Register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any Read Lock Register (RDLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Table 10.
Bit
Lock Registers
Bit Name
Value
b7-b4
b1
b0
30/61
Function
Reserved
‘1’
The Write Lock and Lock Down Bits cannot be changed. Once a
‘1’ is written to the Lock Down Bit it cannot be cleared to ‘0’,
except by a Reset or power-up.
‘0’
The Write Lock and Lock Down Bits can be changed by writing
new values to them. (Default value).
‘1’
Write, Program and Erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sector are executed
and will modify the sector contents. (Default value).
Sector Lock
Down
Sector Write
Lock
M25PE80
Instructions
Table 11.
Bit
Not for new design: Lock Registers for the M25PE80 in T7Y process
(see Important note on page 6)
Bit Name
Value
Function
b7-b4
b3
b2
b1
b0
Reserved
‘1’
This functionality must not be used for new designs, as the
M25PE80 delivered from Feb 2007 will not offer this functionality.
The Write Lock and Lock Down Bits cannot be changed. Once a
‘1’ is written to the Lock Down Bit it cannot be cleared to ‘0’ except
by a Reset or power-up.
‘0’
This functionality must not be used for new designs, as the
M25PE80 delivered from Feb 2007 will not offer this functionality.
The Write Lock and Lock Down Bits can be changed by writing
new values to them. (Default value).
‘1’
This functionality must not be used for new designs, as the
M25PE80 delivered from Feb 2007 will not offer this functionality.
Write, Program and Erase operations in this subsector will not be
executed. The memory contents will not be changed.
‘0’
This functionality must not be used for new designs, as the
M25PE80 delivered from Feb 2007 will not offer this functionality.
Write, Program and Erase operations in this subsector are
executed and will modify the subsector contents. (Default value).
‘1’
The Write Lock and Lock Down Bits cannot be changed. Once a
‘1’ is written to the Lock Down Bit it cannot be cleared to ‘0’,
except by a Reset or power-up.
‘0’
The Write Lock and Lock Down Bits can be changed by writing
new values to them. (Default value).
‘1’
Write, Program and Erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sector are executed
and will modify the sector contents. (Default value).
Subsector Lock
Down(1)
Subsector Write
Lock(1)
Sector Lock
Down
Sector Write
Lock
1. Valid only for sector 0 and sector 15 (the value ‘0’ is returned for other sectors).
Figure 14. Read Lock Register (RDLR) instruction sequence and data-out Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
1
0
MSB
Lock Register Out
High Impedance
Q
7
6
5
4
3
2
1
0
MSB
AI10783
31/61
Instructions
6.9
M25PE80
Page Write (PW)
The Page Write (PW) instruction allows Bytes to be written in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the
Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch
(WEL).
The Page Write (PW) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, three address Bytes and at least one data Byte on Serial Data Input (D).
The rest of the page remains unchanged if no power failure occurs during this write cycle.
The Page Write (PW) instruction performs a page erase cycle even if only one Byte is
updated.
If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding
the addressed page boundary roll over, and are written from the start address of the same
page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 15.
If more than 256 Bytes are sent to the device, previously latched data are discarded and the
last 256 data Bytes are guaranteed to be written correctly within the same page. If less than
256 Data Bytes are sent to device, they are correctly written at the requested addresses
without having any effects on the other Bytes of the same page.
For optimized timings, it is recommended to use the Page Write (PW) instruction to write all
consecutive targeted Bytes in a single sequence versus using several Page Write (PW)
sequences with each containing only a few Bytes.
Chip Select (S) must be driven High after the eighth bit of the last data Byte has been
latched in, otherwise the Page Write (PW) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed Page Write cycle (whose duration
is tPW) is initiated. While the Page Write cycle is in progress, the Status Register may be
read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is
1 during the self-timed Page Write cycle, and is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Write (PW) instruction applied to a page that is Hardware or Software Protected is
not executed.
Any Page Write (PW) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a Page Write (PW) cycle is in progress, the Page Write
cycle is interrupted and the programmed data may be corrupted (see Table 15: Device
status after a Reset Low pulse). On Reset going Low, the device enters the Reset mode and
a time of tRHSL is then required before the device can be re-selected by driving Chip Select
(S) Low. For the value of tRHSL see Table 24: Timings after a Reset Low pulse in Section 11:
DC and AC parameters.
32/61
M25PE80
Instructions
Figure 15. Page Write (PW) instruction sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
Data Byte 1
1
0
7
6
5
4
3
2
0
1
MSB
MSB
S
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
C
Data Byte 2
7
D
6
MSB
5
4
3
2
Data Byte 3
1
0
7
MSB
6
5
4
3
2
Data Byte n
1
0
7
6
5
4
3
2
1
0
MSB
AI04045
1. Address bits A23 to A20 are Don’t Care
2. 1 ≤n ≤256
33/61
Instructions
6.10
M25PE80
Page Program (PP)
The Page Program (PP) instruction allows Bytes to be programmed in the memory
(changing bits from 1 to 0, only). Before it can be accepted, a Write Enable (WREN)
instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, three address Bytes and at least one data Byte on Serial Data Input
(D). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data
exceeding the addressed page boundary roll over, and are programmed from the start
address of the same page (the one whose 8 least significant address bits (A7-A0) are all
zero). Chip Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 16.
If more than 256 Bytes are sent to the device, previously latched data are discarded and the
last 256 data Bytes are guaranteed to be programmed correctly within the same page. If
less than 256 Data Bytes are sent to device, they are correctly programmed at the
requested addresses without having any effects on the other Bytes of the same page.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted Bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few Bytes (see Table 21: AC
characteristics).
Chip Select (S) must be driven High after the eighth bit of the last data Byte has been
latched in, otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed Page Program cycle (whose
duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register
may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At
some unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is
reset.
A Page Program (PP) instruction applied to a page that is Hardware or software Protected is
not executed.
Any Page Program (PP) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a Page Program (PP) cycle is in progress, the Page
Program cycle is interrupted and the programmed data may be corrupted (see Table 15:
Device status after a Reset Low pulse). On Reset going Low, the device enters the Reset
mode and a time of tRHSL is then required before the device can be re-selected by driving
Chip Select (S) Low. For the value of tRHSL see Table 24: Timings after a Reset Low pulse in
Section 11: DC and AC parameters.
34/61
M25PE80
Instructions
Figure 16. Page Program (PP) instruction sequence
S
0
1
2
3
4
5
6
7
8
28 29 30 31 32 33 34 35 36 37 38 39
9 10
C
Instruction
24-Bit Address
23 22 21
D
3
2
Data Byte 1
1
0
7
6
5
4
3
2
0
1
MSB
MSB
S
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
C
Data Byte 2
D
7
6
MSB
5
4
3
2
Data Byte 3
1
0
7
MSB
6
5
4
3
2
Data Byte n
1
0
7
6
5
4
3
2
1
0
MSB
AI04044
1. Address bits A23 to A20 are Don’t Care
2. 1 ≤n ≤256
35/61
Instructions
6.11
M25PE80
Write to Lock Register (WRLR)
The Write to Lock Register (WRLR) instruction allows bits to be changed in the Lock
Registers. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been decoded, the
device sets the Write Enable Latch (WEL).
The Write to Lock Register (WRLR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code, three address Bytes (pointing to any address in the
targeted sector and one data Byte on Serial Data Input (D). The instruction sequence is
shown in Figure 17. Chip Select (S) must be driven High after the eighth bit of the data Byte
has been latched in, otherwise the Write to Lock Register (WRLR) instruction is not
executed.
Lock Register bits are volatile, and therefore do not require time to be written. When the
Write to Lock Register (WRLR) instruction has been successfully executed, the Write
Enable Latch (WEL) bit is reset after a delay time less than tSHSL minimum value.
Any Write to Lock Register (WRLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 17. Write to Lock Register (WRLR) instruction sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
Lock Register
In
24-Bit Address
23 22 21
D
MSB
3
2
1
0
7
6
5
4
3
2
1
0
MSB
AI10784
Table 12.
Lock Register In(1)
Sector
All Sectors in T9HX process
All Sectors except for Sector 0
and Sector 15 in T7Y process
Bit
Value
b7-b2
‘0’
b1
Sector Lock Down Bit Value (refer to Table 11)
b0
Sector Write Lock Bit Value (refer to Table 11)
1. The table rows in gray are true for products processed in the T7Y process only (see Important note on
page 6).
36/61
M25PE80
Instructions
Table 13.
Not for new design: Lock Registers for the M25PE80 in T7Y process(1)
Sector
Bit
Value
All Sectors in T9HX process
All Sectors except for Sector 0
and Sector 15 in T7Y process
b7-b2
‘0’
b1
Sector Lock Down Bit Value (refer to Table 11)
b0
Sector Write Lock Bit Value (refer to Table 11)
‘1’
Only b3 and b2 are taken into account to modify
the subsector Write Lock and Lock Down bits(2)
‘0’
Only b1 and b0 are taken into account to modify
the sector Write Lock and Lock Down bits(3)
b7
Sector 0, Sector 15 in T7Y
process
b3
Subsector Lock Down Bit value (refer to Table 11)
b2
Subsector Write Lock Bit Value (refer to Table 11)
b1
Sector Lock Down Bit Value (refer to Table 11)
b0
Sector Write Lock Bit Value (refer to Table 11)
1. The table rows in gray are true for products processed in the T7Y process only.
2. b6-b4 and b1-b0 must be reset to ‘0’.
3. b6-b2 must be reset to ‘0’.
For products processed in the T7Y process only (see Important note):
Protection always prevails:
●
●
●
●
When the Lock Down Bit of Sector 0 or Sector 15 is set to ‘1’.
–
If the Lock Down Bit of Sector 0 is ‘1’, all the Lock Down Bits of the subsectors in
Sector 0 are forced to ‘1’.
–
If the Lock Down Bit of Sector 15 is ‘1’, all the Lock Down Bits of the subsectors in
Sector 15 are forced to ‘1’
When the Write Lock Bit of Sector 0 or Sector 15 is set to ‘1’.
–
if the Write Lock Bit of Sector 0 is ‘1’, the Write Lock Bits of all the subsectors in
Sector 0 are forced to ‘1’ (even if their Lock Down Bits are set to ‘1’).
–
if the Write Lock Bit of Sector 15 is ‘1’, the Write Lock Bits of all the subsectors in
Sector 15 are forced to ‘1’ (even if their Lock Down Bits are set to ‘1’).
When the Write Lock Bit of Sector 0 or Sector 15 is reset to ‘0’.
–
if the Write Lock Bit of Sector 0 is ‘0’, all the subsectors in Sector 0 whose Lock
Down Bit is ‘0’ have their Write Lock Bits forced to ‘0’.
–
if the Write Lock Bit of Sector 15 is ‘0’, all the subsectors in Sector 15 whose Lock
Down Bit is ‘0’ have their Write Lock Bits forced to ‘0’.
When the Write Lock Bit of any sector or subsector is set to ‘1’, any instruction that may
modify the contents of this sector or subsector will be rejected (including Sector Erase
and Bulk Erase).
Note that when the WRLR instruction acts both on Write Lock (WL) and Lock Down (LD)
bits, it firstly programs the WL bit, and then the LD bit.
As an example, if a subsector Lock Register settings are xxxx0101b and a WRLR instruction
is issued with a Lock Register In data set to 00000010b:
1.
the sector WL bit is first set to ‘0’ (and all subsectors that are not locked-down will have
their WL bit reset to ‘0’).
2.
the sector LD bit and all subsectors LD bits are set to ‘1’. In this case, the final value of
the above subsector Lock Register is xxxx1010b.
37/61
Instructions
6.12
M25PE80
Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all bits inside the chosen page. Before it can
be accepted, a Write Enable (WREN) instruction must previously have been executed. After
the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable
Latch (WEL).
The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address Bytes on Serial Data Input (D). Any address inside the
Page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 18.
Chip Select (S) must be driven High after the eighth bit of the last address Byte has been
latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Page Erase cycle (whose duration is tPE) is initiated.
While the Page Erase cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the selftimed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page that is Hardware or software Protected is
not executed.
Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a Page Erase (PE) cycle is in progress, the Page Erase
cycle is interrupted and the programmed data may be corrupted (see Table 15: Device
status after a Reset Low pulse). On Reset going Low, the device enters the Reset mode and
a time of tRHSL is then required before the device can be re-selected by driving Chip Select
(S) Low. For the value of tRHSL see Table 24: Timings after a Reset Low pulse in Section 11:
DC and AC parameters.
Figure 18. Page Erase (PE) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
Instruction
D
24 Bit Address
23 22
2
1
0
MSB
AI04046
1. Address bits A23 to A20 are Don’t Care.
38/61
M25PE80
Instructions
6.13
SubSector Erase (SSE)
Note:
The SubSector Erase (SSE) instruction is decoded only in the M25PE80 in the T9HX
process (see Important note on page 6).
The SubSector Erase (SSE) instruction sets to 1 (FFh) all bits inside the chosen subsector.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been
executed. After the Write Enable (WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The SubSector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, and three address Bytes on Serial Data Input (D). Any address inside
the SubSector (see Table 5) is a valid address for the SubSector Erase (SE) instruction.
Chip Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 20.
Chip Select (S) must be driven High after the eighth bit of the last address Byte has been
latched in, otherwise the SubSector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed SubSector Erase cycle (whose duration is tSSE) is
initiated. While the SubSector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed SubSector Erase cycle, and is 0 when it is completed. At some
unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A SubSector Erase (SSE) instruction applied to a subsector that contains a page that is
Hardware or software Protected is not executed.
Any SubSector Erase (SSE) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a SubSector Erase (SSE) cycle is in progress, the
SubSector Erase cycle is interrupted and data may not be erased correctly (see Table 15:
Device status after a Reset Low pulse). On Reset going Low, the device enters the Reset
mode and a time of tRHSL is then required before the device can be re-selected by driving
Chip Select (S) Low. For the value of tRHSL see Table 24: Timings after a Reset Low pulse in
Section 11: DC and AC parameters.
Figure 19. SubSector Erase (SSE) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
Instruction
D
24 Bit Address
23 22
2
1
0
MSB
AI12356
1. Address bits A23 to A20 are Don’t Care.
39/61
Instructions
6.14
M25PE80
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address Bytes on Serial Data Input (D). Any address inside the
Sector (see Table 5) is a valid address for the Sector Erase (SE) instruction. Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 20.
Chip Select (S) must be driven High after the eighth bit of the last address Byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector that contains a page that is Hardware or
software Protected is not executed.
Any Sector Erase (SE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a Sector Erase (SE) cycle is in progress, the Sector
Erase cycle is interrupted and data may not be erased (see Table 15: Device status after a
Reset Low pulse). On Reset going Low, the device enters the Reset mode and a time of
tRHSL is then required before the device can be re-selected by driving Chip Select (S) Low.
For the value of tRHSL see Table 24: Timings after a Reset Low pulse in Section 11: DC and
AC parameters.
Figure 20. Sector Erase (SE) instruction sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
Instruction
D
24 Bit Address
23 22
2
1
0
MSB
AI03751D
1. Address bits A23 to A20 are Don’t Care.
40/61
M25PE80
6.15
Instructions
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 21.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is tBE) is initiated. While the
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
Any Bulk Erase (BE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress. A Bulk Erase (BE)
instruction is ignored if at least one sector or subsector is write-protected (Hardware or
Software protection).
If Reset (Reset) is driven Low while a Bulk Erase (BE) cycle is in progress, the Bulk Erase
cycle is interrupted and data may not be erased correctly (see Table 15: Device status after
a Reset Low pulse). On Reset going Low, the device enters the Reset mode and a time of
tRHSL is then required before the device can be re-selected by driving Chip Select (S) Low.
For the value of tRHSL see Table 24: Timings after a Reset Low pulse in Section 11: DC and
AC parameters.
Figure 21. bulk erase (be) Instruction Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
AI03752D
41/61
Instructions
6.16
M25PE80
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the Deep Power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in active use, since in this mode, the
device ignores all Write, Program and Erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the Standby mode
(if there is no internal cycle currently in progress). But this mode is not the Deep Powerdown mode. The Deep Power-down mode can only be entered by executing the Deep
Power-down (DP) instruction, subsequently reducing the standby current (from ICC1 to ICC2,
as specified in Table 20).
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Issuing the Release from
Deep Power-down (RDP) instruction will cause the device to exit the Deep Power-down
mode.
The Deep Power-down mode automatically stops at Power-down, and the device always
Powers-up in the Standby mode.
The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 22.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of tDP before the supply current is reduced
to ICC2 and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 22. Deep Power-down (DP) instruction sequence
S
0
1
2
3
4
5
6
7
tDP
C
Instruction
D
Stand-by Mode
Deep Power-down Mode
AI03753D
42/61
M25PE80
6.17
Instructions
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Executing this instruction
takes the device out of the Deep Power-down mode.
The Release from Deep Power-down (RDP) instruction is entered by driving Chip Select (S)
Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be
driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 23.
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select
(S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven
Low, cause the instruction to be rejected, and not executed.
After Chip Select (S) has been driven High, followed by a delay, tRDP, the device is put in the
Standby mode. Chip Select (S) must remain High at least until this period is over. The
device waits to be selected, so that it can receive, decode and execute instructions.
Any Release from Deep Power-down (RDP) instruction, while an Erase, Program or Write
cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 23. Release from Deep Power-down (RDP) instruction sequence
S
0
1
2
3
4
5
6
7
tRDP
C
Instruction
D
High Impedance
Q
Deep Power-down Mode
Stand-by Mode
AI06807
43/61
Power-up and Power-down
7
M25PE80
Power-up and Power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on VCC) until VCC reaches the correct value:
●
VCC(min) at Power-up, and then for a further delay of tVSL
●
VSS at Power-down
Usually a simple pull-up resistor on Chip Select (S) can be used to ensure safe and proper
Power-up and Power-down.
To avoid data corruption and inadvertent write operations during power-up, a Power On
Reset (POR) circuit is included. The logic inside the device is held reset while VCC is less
than the Power On Reset (POR) threshold voltage, VWI – all operations are disabled, and
the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Write (PW), Page Program
(PP), Page Erase (PE), Sector Erase (SE), Bulk Erase (BE) and Write to Lock Register
(WRLR) instructions until a time delay of tPUW has elapsed after the moment that VCC rises
above the VWI threshold. However, the correct operation of the device is not guaranteed if,
by this time, VCC is still below VCC(min). No Write, Program or Erase instructions should be
sent until the later of:
●
tPUW after VCC passed the VWI threshold
●
tVSL after VCC passed the VCC(min) level
These values are specified in Table 14.
If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be
selected for READ instructions even if the tPUW delay is not yet fully elapsed.
As an extra protection, the Reset (Reset) signal could be driven Low for the whole duration
of the Power-up and Power-down phases.
At Power-up, the device is in the following state:
●
The device is in the Standby mode (not the Deep Power-down mode).
●
The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply.
Each device in a system should have the VCC rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of 0.1µF).
At Power-down, when VCC drops from the operating voltage, to below the Power On Reset
(POR) threshold voltage, VWI, all operations are disabled and the device does not respond
to any instruction. (The designer needs to be aware that if a Power-down occurs while a
Write, Program or Erase cycle is in progress, some data corruption can result.)
44/61
M25PE80
Power-up and Power-down
Figure 24. Power-up timing
VCC
VCC(max)
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
VCC(min)
tVSL
Reset State
of the
Device
Read Access allowed
Device fully
accessible
VWI
tPUW
time
AI04009C
Table 14.
Power-Up timing and VWI threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
VCC(min) to S low
30
tPUW(1)
Time delay before the first Write, Program or Erase instruction
1
10
ms
VWI(1)
Write Inhibit Voltage
1.5
2.5
V
µs
1. These parameters are characterized only, over the temperature range –40°C to +85°C.
45/61
Reset
8
M25PE80
Reset
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
All the Lock bits are reset to 0 after a Reset Low pulse.
Table 15 shows the status of the device after a Reset Low pulse.
Table 15.
Device status after a Reset Low pulse
Conditions:
Reset pulse occurred
Lock bits status
Internal logic
status
Addressed data
While decoding an instruction(1): WREN,
WRDI, RDID, RDSR, READ, RDLR,
Fast_Read, WRLR, PW, PP, PE, SE, BE,
SSE, DP, RDP
Reset to 0
Same as POR
Not significant
Under completion of an Erase or Program
cycle of a PW, PP, PE, SSE, SE, BE
operation
Reset to 0
Equivalent to
POR
Addressed data
could be modified
Under completion of a WRSR operation
Reset to 0
Equivalent to
POR (after tW)
Write is correctly
completed
Device deselected (S High) and in Standby
mode
Reset to 0
Same as POR
Not significant
1.
46/61
S remains Low while Reset is Low.
M25PE80
9
Initial delivery state
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each Byte
contains FFh). All usable Status Register bits are 0.
10
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 16.
Absolute maximum ratings
Symbol
Parameter
TSTG
Storage Temperature
TLEAD
Lead temperature during soldering
Min.
Max.
Unit
–65
150
°C
See (1)
VIO
Input and Output Voltage (with respect to Ground)
–0.6
VCC +
0.6
V
VCC
Supply Voltage
–0.6
4.0
V
–2000
2000
V
VESD
Electrostatic Discharge Voltage (Human Body
model)(2)
1. Compliant with JEDEC Std J-STD-020C (for small body, SnPb or Pb assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU.
2. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
47/61
DC and AC parameters
11
M25PE80
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 17.
Operating conditions
Symbol
VCC
TA
Table 18.
Parameter
Min.
Max.
Unit
Supply voltage
2.7
3.6
V
Ambient operating temperature
–40
85
°C
Max.
Unit
AC measurement conditions
Symbol
CL
Parameter
Min.
Load capacitance
30
Input rise and fall times
pF
5
ns
Input pulse voltages
0.2VCC to 0.8VCC
V
Input and output timing reference voltages
0.3VCC to 0.7VCC
V
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 25. AC measurement I/O waveform
Input Levels
Input and Output
Timing Reference Levels
0.8VCC
0.7VCC
0.3VCC
0.2VCC
AI00825B
Table 19.
Symbol
COUT
CIN
Capacitance
Parameter
Output capacitance (Q)
Input capacitance (other pins)
Test Condition
Max.
Unit
VOUT = 0 V
8
pF
VIN = 0 V
6
pF
1. Sampled only, not 100% tested, at TA=25°C and a frequency of 20 MHz.
48/61
Min.
M25PE80
DC and AC parameters
Table 20.
DC characteristics
Symbol
Parameter
Test Condition (in addition
to those in Table 17)
Min.
Max.
Unit
ILI
Input leakage current
±2
µA
ILO
Output leakage current
±2
µA
ICC1
Standby current
(Standby and Reset modes)
S = VCC, VIN = VSS or VCC
50
µA
ICC2
Deep Power-down current
S = VCC, VIN = VSS or VCC
10
µA
ICC3
Operating current
(FAST_READ)
C = 0.1VCC / 0.9VCC at
50 MHz, Q = open
8
mA
ICC4
Operating current (PW)
S = VCC
15
mA
ICC5
Operating current (SE)
S = VCC
15
mA
VIL
Input low voltage
– 0.5
0.3VCC
V
VIH
Input high voltage
0.7VCC
VCC+ 0.4
V
VOL
Output low voltage
IOL = 1.6 mA
0.4
V
VOH
Output high voltage
IOH = –100 µA
VCC–0.2
V
49/61
DC and AC parameters
Table 21.
M25PE80
AC characteristics
Test conditions specified in Table 17 and Table 18
Symbol
fC
Alt.
Parameter
Min.
fC
Clock Frequency for the following
instructions: FAST_READ, RDLR, PW,
PP, WRLR, PE, SE, DP, RDP, WREN,
WRDI, RDSR
Clock Frequency for READ
instructions
fR
tCH(1)
tCLH
Clock High Time
tCL(1)
tCLL
Clock Low Time
tCSS
tCHSL
Max.
Unit
D.C.
50
MHz
D.C.
20
MHz
9
ns
9
ns
0.1
V/ns
S Active Setup Time (relative to C)
5
ns
S Not Active Hold Time (relative to C)
5
ns
Clock Slew Rate
tSLCH
Typ.
(2)
(peak to peak)
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ(2)
tDIS
Output Disable Time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO
Output Hold Time
0
ns
tTHSL
Top Sector Lock Setup Time
50
ns
tSHTL
Top Sector Lock Hold Time
100
ns
tDP
(2)
tRDP(2)
S to Deep Power-down
3
µs
S High to Standby Mode
30
µs
25
ms
0.45 +
n * 0.9/256
5
ms
Page Write Cycle Time (256 Bytes)
tPW(3)
Page Write Cycle Time (n Bytes)
Page Program Cycle Time (256 Bytes)
tPP(3)
Page Program Cycle Time (n Bytes)
11
10.1 +
n * 0.9/256
1.35
tPE
Page Erase Cycle Time
10
20
ms
tSE
Sector Erase Cycle Time
1
5
s
tBE
Bulk Erase Cycle Time
10
60
s
1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one
sequence including all the Bytes versus several sequences of only a few Bytes (1 ≤n ≤256).
50/61
M25PE80
Table 22.
DC and AC parameters
AC characteristics (T9HX (0.11µm) Process, see Important note on page 6)(1)
Test conditions specified in Table 17 and Table 18
Symbol
Alt.
Parameter
Min.
fC
fC
Clock Frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
Clock Frequency for READ instructions
fR
tCH(2)
tCL(2)
Max.
Unit
D.C.
50
MHz
D.C.
33
MHz
tCLH
Clock High Time
9
ns
tCLL
Clock Low Time
9
ns
0.1
V/ns
S Active Setup Time (relative to C)
5
ns
S Not Active Hold Time (relative to C)
5
ns
Clock Slew Rate 2 (peak to peak)
tSLCH
Typ.
tCSS
tCHSL
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
100
ns
tSHSL
tCSH
S Deselect Time
tSHQZ(3)
tDIS
Output Disable Time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO
Output Hold Time
0
ns
tWHSL
(4)
Write Protect Setup Time
50
ns
tSHWL
(4)
Write Protect Hold Time
100
ns
tDP(3)
tRDP(3)
tW
tPW(5)
tPP(3)
S to Deep Power-down
3
µs
S High to Standby Mode
30
µs
Write Status Register Cycle Time
3
15
ms
Page Write Cycle Time (256 Bytes)
11
23
ms
Page Program Cycle Time (256 Bytes)
0.8
3
ms
Page Program Cycle Time (n Bytes)
int(n/8) × 0.025(6)
tPE
Page Erase Cycle Time
10
20
ms
tSE
Sector Erase Cycle Time
1
5
s
tSSE
SubSector Erase Cycle Time
40
150
ms
tBE
Bulk Erase Cycle Time
10
20
s
1. Preliminary data.
2. tCH + tCL must be greater than or equal to 1/ fC
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one sequence
including all the Bytes versus several sequences of only a few Bytes (1 ≤n ≤256).
6.
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
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DC and AC parameters
M25PE80
Figure 26. Serial input timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
MSB IN
D
tCLCH
LSB IN
High Impedance
Q
AI01447C
Figure 27. Top Sector Lock (T7Y process) or Write Protect (T9HX process) setup and hold
timing
TSL or
W
tTHSL
tSHTL
tWHSL
tSHWL
S
C
D
High Impedance
Q
AI3559
1. For the differences between devices produced in the two processes, see Important note on page 6.
52/61
M25PE80
DC and AC parameters
Figure 28. Output timing
S
tCH
C
tCLQV
tCLQX
tCLQV
tCL
tSHQZ
tCLQX
LSB OUT
Q
tQLQH
tQHQL
D
ADDR.LSB IN
AI01449e
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DC and AC parameters
Table 23.
M25PE80
Reset conditions
Test conditions specified in Table 17 and Table 18
Symbol
Alt.
tRLRH(1)
tRST
Parameter
Reset Pulse Width
Chip Select High to
Reset High
tSHRH
Conditions
Chip should have been
deselected before Reset is
de-asserted
Min.
Typ.
Max. Unit
10
µs
10
ns
1. Value guaranteed by characterization, not 100% tested in production.
Table 24.
Timings after a Reset Low pulse(1)(2)
Test conditions specified in Table 17 and Table 18
Symbol Alt.
tRHSL
Conditions:
Reset pulse occurred
Parameter
Reset
tREC Recovery
Time
Max.
Unit
While decoding an instruction(3): WREN,
WRDI, RDID, RDSR, READ, RDLR,
Fast_Read, WRLR, PW, PP, PE, SE, BE,
SSE, DP, RDP
30
µs
Under completion of an Erase or Program
cycle of a PW, PP, PE, SE, BE operation
300
µs
Under completion of an Erase cycle of an
SSE operation
3
ms
tW (see
Table 22)
ms
0
µs
Under completion of a WRSR operation
Device deselected (S High) and in Standby
mode
1. All the values are guaranteed by characterization, and not 100% tested in production.
2. See Table 15 for a description of the device status after a Reset Low pulse.
3.
S remains Low while Reset is Low.
Figure 29. Reset ac waveforms
S
tSHRH
Reset
tRHSL
tRLRH
AI06808
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M25PE80
Package mechanical
Figure 30. VFQFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, 6 × 5 mm,
package outline
A
D
aaa C A
R1
D1
E1
E2
e
bbb
E
M C A B
B
2x
b
0.10 C B
aaa C B
12
Package mechanical
0.10 C A
D2
θ
L
A2
ddd
A
C
A1 A3
70-ME
1. Drawing is not to scale.
2. The circle in the top view of the package indicates the position of pin 1.
Table 25.
VFQFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, 6 × 5 mm,
package mechanical data
millimeters
inches
Symbol
A
Typ
Min
Max
Typ
Min
Max
0.85
0.80
1.00
0.0335
0.0315
0.0394
0.00
0.05
0.0000
0.0020
0.0138
0.0189
0.1260
0.1417
A1
A2
0.65
0.0256
A3
0.20
0.0079
b
0.40
D
6.00
0.2362
D1
5.75
0.2264
D2
3.40
E
5.00
0.1969
E1
4.75
0.1870
E2
4.00
3.80
4.30
0.1575
0.1496
0.1693
e
1.27
–
–
0.0500
–
–
R1
0.10
0.00
0.0039
0.0000
L
0.60
0.50
0.0236
0.0197
0.35
3.20
0.48
3.60
0.75
0.0157
0.1339
0.0295
Θ
12°
12°
aaa
0.15
0.0059
bbb
0.10
0.0039
ddd
0.05
0.0020
55/61
Package mechanical
M25PE80
Figure 31. SO8 wide – 8 lead Plastic Small Outline, 208 mils body width, package
outline
A
A2
c
b
CP
e
D
N
E E1
1
A1
k
L
6L_ME
1. Drawing is not to scale.
2. The circle in the top view of the package indicates the position of pin 1.
Table 26.
SO8 wide – 8 lead Plastic Small Outline, 208 mils body width, mechanical
data
millimeters
inches
Symbol
Typ
Min
A
Typ
Min
2.50
Max
0.098
A1
0.00
0.25
0.000
0.010
A2
1.51
2.00
0.059
0.079
b
0.40
0.35
0.51
0.016
0.014
0.020
c
0.20
0.10
0.35
0.008
0.004
0.014
CP
0.10
0.004
D
6.05
0.238
E
5.02
6.22
0.198
0.245
E1
7.62
8.89
0.300
0.350
–
–
k
0°
L
0.50
N
8
e
56/61
Max
1.27
0.050
–
–
10°
0°
10°
0.80
0.020
8
0.031
M25PE80
Package mechanical
Figure 32. SO8N - 8 lead Plastic Small Outline, 150 mils body width, package outline
h x 45˚
A2
A
c
ccc
b
e
0.25 mm
GAUGE PLANE
D
k
8
E1
E
1
A1
L
L1
SO-A
1. Drawing is not to scale.
Table 27.
SO8N - 8 lead Plastic Small Outline, 150 mils body width, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.75
Max
0.069
A1
0.10
A2
1.25
b
0.28
0.48
0.011
0.019
c
0.17
0.23
0.007
0.009
ccc
0.25
0.004
0.010
0.049
0.10
0.004
D
4.90
4.80
5.00
0.193
0.189
0.197
E
6.00
5.80
6.20
0.236
0.228
0.244
E1
3.90
3.80
4.00
0.154
0.150
0.157
e
1.27
–
–
0.050
–
–
h
0.25
0.50
0.010
0.020
k
0°
8°
0°
8°
L
0.40
1.27
0.016
0.050
L1
1.04
0.041
57/61
Part numbering
13
M25PE80
Part numbering
Table 28.
Ordering information scheme
Example:
M25PE80
–
V
MP 6
T
P
Device type
M25PE = Page-Erasable Serial Flash Memory
Device function
80 = 8 Mbit (1 Mb × 8)
Operating Voltage
V = VCC = 2.7 to 3.6 V
Package
MW = SO8W (208 mils width)
MN = SO8N (150 mils width)(1)
MP = VFQFPN8 6x5mm (MLP8)
Device Grade
6 = Industrial: device tested with standard test flow over –40 to 85 °C
Option
blank = Standard Packing
T = Tape and Reel Packing
Plating technology
P or G = ECOPACK® (RoHs compliant)
1. Package only available for products processed in the T9HX process.
Note:
For a list of available options (speed, package, etc.), for further information on any aspect of
this device or when ordering parts operating at 50 MHz (0.11 µm, process digit “4”), please
contact your nearest ST Sales Office.
The category of Second-Level Interconnect is marked on the package and on the inner box
label, in compliance with JEDEC Standard JESD97. The maximum ratings related to
soldering conditions are also marked on the inner box label.
58/61
M25PE80
14
Revision history
Revision history
Table 29.
Document revision history
Date
Version
24-Nov-2004
0.1
First Issue.
07-Dec-2004
0.2
4KB Software protection granularity extended to Sector 15.
0.3
SO16W package removed, SO8W package added.
End timing line of tSHQZ modified in Figure 28: Output timing. Plating
Technology options modified in Table 28: Ordering information scheme.
Minor text changes.
Tables 2 and 3 and Figure 6 for details on the software protection scheme.
25-Jul-2005
0.4
Lock Register programming sequence detailed in Section Write to Lock
Register (WRLR).
Sections An easy way to modify data, A fast way to modify data, Page
Write (PW) and Page Program (PP), updated to explain when using Page
Write and Page Program instructions.
Bulk Erase cycle time (tBE), Page Write cycle time (tPW) and Page
Program cycle time (tPP) updated in Table 21: AC characteristics.
24-Aug-2005
1.0
Version number updated for internet. No document changes.
25-Aug-2005
2.0
Document status updated to Preliminary Data.
3.0
Page Program cycle time, tPP, and Page Write Cycle Time (n Bytes), tPW,
updated in Table 21: AC characteristics. ICC3 modified in Table 20: DC
characteristics.
tSLCH, tCHSL, tCHSH, tSHCH and tBE modified in Table 21: AC
characteristics.
MLP package renamed. Under Plating technology, Blank option removed.
Note 3 to Table 21 modified. Address modified in Figure 6: Block diagram.
Note added to Figure 30 and Figure 31.
Document status promoted from Preliminary Data to full Datasheet status.
10-May-2005
22-Nov-2005
12-May-2006
4
Changes
Don’t care address bits modified in Note 1 (below Figure 12), Note 1
(below Figure 13), Note 1 (below Figure 15), Note 1 (below Figure 16),
Note 1 (below Figure 18) and Note 1 (below Figure 20).
Small text changes.
59/61
Revision history
Table 29.
Date
30-Nov-2006
15-Jan-2007
60/61
M25PE80
Document revision history
Version
Changes
5
Important note on page 6 added.
VFQFPN8 and SO8W packages updated and SO8N (MN) package
added (see Section 12: Package mechanical).
Figure 4: Bus master and memory devices on the SPI bus updated and
explanatory paragraph added.
Reset signal behavior specified in Section 6.8: Read Lock Register
(RDLR), Section 6.10: Page Program (PP), Section 6.12: Page Erase
(PE) and Section 6.14: Sector Erase (SE) and Section 6.15: Bulk Erase
(BE). Section 8: Reset added, Table 23: Reset conditions modified and
Table 24: Timings after a Reset Low pulse added.
Table 3: Not for new design: TY7 process only, Software protection
scheme truth table (Sectors 0 and 15) applies to T7Y process only.
Software protection scheme figure removed. B3 and b2 apply to T7Y
process only in Table 8: Status Register format, Table 10: Lock Registers
added, Table 11 applies to T7Y process only. Table 12: Lock Register In
added, Table 13 applies to T7Y process only.
Protection always prevails: applies to T7Y process only.
TLEAD added and VIO max changed in Table 16: Absolute maximum
ratings
M25PE80 products processed in T9HX process added to datasheet:
– WP pin replaces TSL (T7Y technology), see Section 2.6: Write Protect
(W) or Top Sector Lock (TSL)
– Write Status Register (WRSR) and SubSector Erase (SSE) instructions
added for T9HX process
– subsector protection granularity removed in T9HX process, still exists in
T7Y process
– Table 5: Memory organization updated to show subsectors
– Status Register BP2, BP1, BP0 bits and SRWD bit added.
7
SPM2 description and Table 4: Protected area sizes added in
Section 4.8: Protection modes.
VFQFPN8 package specifications updated (see Table 25 and Figure 30).
small text changes.
M25PE80
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