A Product Line of Diodes Incorporated DRDC3105 INTEGRATED RELAY, INDUCTIVE LOAD DRIVER Description and Applications Features and Benefits The DRDC3105 is an integrated solid-state DC relay driver that can switch inductive loads. It provides a robust driver interface by acting as a buffer stage between sensitive logic circuits and that of 3 to 6V DC inductive relay coils. With a low input drive current requirement, the DRDC3105 only has slight loading on the input circuitry and it will provide good transient isolation between output and input channels. The output switch is guaranteed by design to go open-circuit and fall into the off-state condition when input drive is lost or disconnected. • • In the industry standard SOT23 and SOT26, the DRDC3105 comes as a single or dual die which can replace three to six individual discrete components within a single integrated package, including a Zener across the output. The Zener will clamp at 6.6V to sink inductive currents to ground which will reduce EMI noise in the system. By integrating the Zener, the DRDC3105 eliminates the need for an external free-wheeling diode and allows the driving of inductive loads such as relays, solenoids, incandescent lamps, and small DC motors in: • • • • • • • Automotive: 5.0 V Driven Relays, Lamp Drivers, Motor Controls Telecom equipment: Modems, DSL, Cable (EMTA), Line Cards, IP-PBX, Analog Terminal Adaptors, End User Telecom Equipment Desktop Computers, Printers, Photocopiers LCD & Plasma TVs, Set Top Boxes Consumer Appliances, White Goods, Automated Door Control Industrial equipment inc. Process Control, ATE equipment Solar inverters SOT23 • • • • • • • • • • Inductive load driver capable of driving 3 to 6V DC coils Optimized to switch inductive loads from supply of 3 to 5V with the capability to drive coils up to 2.5W from a 5V rail Fully integrated into a single SOT23 or dual SOT26 package to minimize footprint area and reduce number of components Includes Zener across output to reduce EMI noise Internal low saturation BJT to reduce power dissipation in driving high currents into the coil Output guaranteed to be in off-state condition during no input Near – Zero quiescent supply current in off-state condition with minimal leakage Rugged design and inherently robust by using solid-state BJT technology integrated into a single die ESD Protected up to 1kV on Human Body Model (HBM) “Lead-Free”, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • Case: SOT23 & SOT26 Case material: “Green” plastic molding compound (Note 2) UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: SOT23 = 0.008 grams (Approximate) SOT26 = 0.018 grams (Approximate) SOT26 SOT23 SOT26 GND ESD PROTECTED HBM TO 1kV IN OUT2 GND2 Top View Pin-Out Top View Pin-Out Top View IN1 IN2 OUT Top View OUT1 GND1 Ordering Information (Note 3) Product DRDC3105F-7 DRDC3105E6-7 Notes: Package SOT23 SOT26 Marking 1R6 3105 Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 3,000 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 1R6 DRDC3105 Document number: DS35213 Rev. 3 - 2 3105 1R6 = SOT23, Product type Marking Code 3105 = SOT26, Product type Marking Code 1 of 9 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 Internal Device Schematic Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Supply Voltage Input Voltage (Forward) Input Voltage (Reverse) Output Sink Continuous Current (Note 4) Repetitive Pulse Zener Energy Limit (Duty Cycle 0.01%) Symbol VCC Vin(fwd) Vin(rev) Io Ezpk Limit 6.0 6.0 -0.5 500 50 Unit V V V mA mJ Thermal Characteristics for DRDC3105F (SOT23) @ TA = 25°C unless otherwise specified Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Notes: Symbol (Note 4) PD (Note 4) (Note 5) RθJA RθJC TJ, TSTG Value 330 2.64 379 306 -55 to +150 Unit mW mW/°C °C/W °C/W °C 4. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air condition; the device is measured when operating in a steady-state condition. 5. Thermal resistance from junction to case. Thermal Characteristics for DRDC3105E6 (SOT26) @ TA = 25°C unless otherwise specified Characteristic Symbol (Note 6 & 9) Power Dissipation Linear Derating Factor (Note 6 & 10) PD (Note 7 & 9) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Notes: (Note 6 & 9) (Note 6 & 10) (Note 7 & 9) RθJA RθJL TJ, TSTG Value 0.9 7.2 1.1 8.8 1.7 13.6 139 113 73 100 -55 to +150 Unit W mW/°C °C/W °C/W °C 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions 7. For a device surface mounted on FR4 PCB measured at < 5sec 8. Repetitive rating – pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph 9. For a device with one active die 10. For a device with two die running at equal power 11. Thermal resistance from junction to solder-point (at the end of the “OUT” lead). DRDC3105 Document number: DS35213 Rev. 3 - 2 2 of 9 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Output Zener Breakdown Voltage Output Leakage Current @ 0 Input Voltage “ON” state input voltage (Note 12) “OFF” State Input Voltage (Note 13) ON CHARACTERISTICS Input Bias Current (HFE Limited) Output Saturation Voltage Output Sink Current – Continuous SWITCHING CHARACTERISTICS (Refer to Figure 1) Propagation Delay Times: High to Low Propagation Delay; (5.0V 74HC04) Low to High Propagation Delay; (5.0V 74HC04) High to Low Propagation Delay; 13 (3.0V 74HC04) Low to High Propagation Delay; 13 (3.0V 74HC04) High to Low Propagation Delay; 14 (5.0V 74LS04) Low to High Propagation Delay; 14 (5.0V 74LS04) Transition Times: Fall Time; (5.0V 74HC04) Rise Time; (5.0V 74HC04) Fall Time; 13 (3.0V 74HC04) Rise Time; 13 (3.0V 74HC04) Fall Time; 14 (5.0V 74LS04) Rise Time; 14 (5.0V 74LS04) Notes: Symbol Min Typ Max Unit BV(out) BV(−out) 6.2 - 6.6 0.67 7.0 - V IOO - Vin(on) Vin(off) 400 0.99 540 0.1 30 1.5 - V mV VO = 5.5 V, TA = 25°C VO = 5.5 V, TA = 85°C IO =100 mA, VO = 150mV IO =100 µA, VO = 4.9V Iin VO(sat) IO(on) 250 0.7 125 430 1.6 160 - mA mV mA IO = 250 mA, VO = 0.25 V IO = 250 mA, Iin = 1.5 mA VCE = 0.25 V, Iin = 1.5 mA - 20.4 1.43 - ns µs - - 32.2 760 - ns ns - - 25.3 2.57 - ns µs - - 12.5 411 - ns ns - - 21.1 220 - ns ns - - 15.1 849 - ns ns - tPHL tPLH tPHL tPLH tPHL tPLH tf tr tf tr tf tr µA Test Condition @ IT = 10 mA Pulse 12. The device is guaranteed to be in “ON” state with Vin(on) above 1.5V 13. The device is guaranteed to be in “OFF” state with Vin(off) below 400mV DRDC3105 Document number: DS35213 Rev. 3 - 2 3 of 9 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 Typical Electrical Characteristics HFE, TRANSISTOR DC CURRENT GAIN 500 5 MC74HC04 @ 4.5 Vdc T J = 85°C 400 INPUT VOLTAGE (V) 25°C 300 -40°C 200 100 --------VO = 1.0V _____VO = 3.5V 0.25V 0 1 4 MC68HC05C8 @ 5.0 Vdc 3 MC74HC04 @ 3.0 Vdc 2 MC14049B @ 4.5 Vdc MC68HC05C8 @ 3.3 Vdc 1 MC54LS04 + BAL99LT1 0 0 10 100 IO, OUTPUT SINK CURRENT (mA) DRDC3105 VIN vs. Iin T J = 25°C VO = 0.25V 1 2 3 INPUT CURRENT (mA) 4 Figure 3. Input V-I Requirement Compared to Possible Source Logic Outputs Figure 2. Transistor DC Current Gain Iout, OUTPUT CURRENT (mA) T J = 85°C 25°C -40°C 0.02 0.04 0.06 0.08 INPUT CURRENT (mA) Vout, OUTPUT VOLTAGE (Vdc) 1.0mA 0.8mA 300 0.6mA 200 0.4mA 100 0 0.0 0.2mA 0.1mA 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VO, OUTPUT VOLTAGE (Vdc) 4.0 10 ____ 1.0 T J = 25°C ----T J = -40°C 0.8 0.6 0.4 500mA 0.2 -0.2 1.2mA Figure 5. Transistor Output V-I Characteristic 1.2 0.0 1.4mA 400 0.10 Figure 4. Threshold Effects Iin = 1.6mA 500 Iout = 10mA 350mA 175mA 125mA 50mA 0.1 1 Iin, INPUT CURRENT (mA) 10 VZ, ZENER CLAMP VOLTAGE (V) OUTPUT CURRENT (mA) 600 45 40 35 30 25 20 15 10 5 0 0.00 9 8 T J = 85°C 7 25°C -40°C 61 Figure 6. Output Saturation Voltage versus Iout/Iin DRDC3105 Document number: DS35213 Rev. 3 - 2 4 of 9 www.diodes.com 10 100 IZ, ZENER CURRENT (mA) Figure 7. Zener Clamp Voltage versus Zener Current December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 100,000 VCC = 5.5 Vdc 1M 10,000 Vin = 0.5Vdc 100k Vin = 0.35Vdc 10k 1k 100 Vin = 0Vdc 10 1 -40 OUTPUT LEAKAGE CURRENT (nA) OUTPUT LEAKAGE CURRENT (nA) 10M -20 0 20 40 60 TJ, JUNCTION TEMPERATURE (°C) 80 Vin = 0.5Vdc 1,000 100 Vin = 0.35Vdc 10 1 Vin = 0Vdc 0.1 0.01 0 1 T J = 25°C 2 3 4 5 6 VCC, SUPPLY CURRENT (Vdc) 7 Figure 9. Output Leakage Current versus Supply Voltage Figure 8. Output Leakage Current versus Temperature 1 Iout(max) = 500mA ºPW = 4ms DC = 10% *21 MS RCE(SAT) *26 MS ºPW = 10ms DC = 20% OUTPUT CURRENT (A) ºPW = 100ms DC = 50% *57 MS ºCONTINUOUS DUTY 0.1 *154 MS *250 MS T A = 25°C º = TRANSISTOR PC THERMAL LIMIT * = MAX L/R FROM ZENER PULSED ENERGY LIMIT (REFER TO FIGURE 11) VCC(max) = +6.0 Vdc 0.01 0.1 1 Vout (VOLTS) TYPICAL IZ vs VZ 10 Figure 10. Safe Operating Area DRDC3105 Document number: DS35213 Rev. 3 - 2 5 of 9 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 100k T A = 25°C Emax = 50mJ L/R = 2 * Emax ÷ (Vzpk * Izpk) MAX L/R TIME CONSTANT (ms) 10k 1k 100 10 1E-3 0.01 Izpk (A) 0.1 1 Rth, Transient Thermal Response Figure 11. Zener Repetitive Pulse Energy Limit on L/R Time Constant D = 0.5 100 0.2 0.1 0.05 10 SINGLE PULSE 1 1E-4 1E-3 0.01 0.1 1 10 PULSE WIDTH (s) 100 1000 10000 Figure 12. Transient Thermal Response DRDC3105 Document number: DS35213 Rev. 3 - 2 6 of 9 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 Package Outline Dimensions for SOT23 A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout for SOT23 Y Z C X DRDC3105 Document number: DS35213 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 7 of 9 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 Package Outline Dimensions SOT26 A B C H K M J D L SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout for SOT26 C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 C1 G Y X DRDC3105 Document number: DS35213 Rev. 3 - 2 8 of 9 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DRDC3105 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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