TGS BT169D Thyristors logic level Datasheet

TIGER ELECTRONIC CO.,LTD
Product specification
BT169 series
Thyristors logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors ina plastic envelope, intended
foruse in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate
trigger circuits.
O
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Typ
Parameter
Symbol
Repetitive peak off-state
voltages
VDRM
VRRM
Average on-state current
IT(AV)
0.5
A
RMS on-state current
IT(RMS)
0.8
A
ITSM
8.0
A
Tj
110
o
Tstg
-45~150
o
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
BT169D BT169G
400
Unit
600
V
C
TO-92
C
O
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Symbol
Test Conditions
Min
Repetitive peak off-state voltage
s
VDRM
VRRM
Average on-state current
IT(AV)
half sine wave; Tmb< 103 oC
—
RMS on-state current
IT(RMS)
all conduction angles
Typ
Max
Unit
—
V
0.5
—
A
—
0.8
—
A
—
BT169D
BT169G
400
600
On-state voltage
VT
IT=1.0 A
—
1.20
1.35
V
Holding current
IH
VD =12 V; IGT = 0.5 mA
—
0.5
5
mA
Latching current
IL
VD =12 V; IGT = 0.5 mA
—
0.6
6
mA
Gate trigger current
IGT
VD =12 V; IT = 10 mA
—
15
200
uA
Gate trigger voltage
VGT
VD =12 V; IT = 10 mA
—
0.5
0.8
V
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