TIGER ELECTRONIC CO.,LTD Product specification BT169 series Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors ina plastic envelope, intended foruse in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Typ Parameter Symbol Repetitive peak off-state voltages VDRM VRRM Average on-state current IT(AV) 0.5 A RMS on-state current IT(RMS) 0.8 A ITSM 8.0 A Tj 110 o Tstg -45~150 o Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature BT169D BT169G 400 Unit 600 V C TO-92 C O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min Repetitive peak off-state voltage s VDRM VRRM Average on-state current IT(AV) half sine wave; Tmb< 103 oC — RMS on-state current IT(RMS) all conduction angles Typ Max Unit — V 0.5 — A — 0.8 — A — BT169D BT169G 400 600 On-state voltage VT IT=1.0 A — 1.20 1.35 V Holding current IH VD =12 V; IGT = 0.5 mA — 0.5 5 mA Latching current IL VD =12 V; IGT = 0.5 mA — 0.6 6 mA Gate trigger current IGT VD =12 V; IT = 10 mA — 15 200 uA Gate trigger voltage VGT VD =12 V; IT = 10 mA — 0.5 0.8 V