BAT30S SMALL SIGNAL SCHOTTKY DIODES VOLTAGE 30 Volts CURRENT 300 mA FEATURES .006(0.15)MIN. • Very low conduction losses .120(3.04) • Negligible switching losses • Low forward and reverse recovery times • Extremely Fast Switching • Surface mount device • Low capacitance diode • In compliance with EU RoHS 2002/95/EC directives .079(2.00) .008(0.20) .003(0.08) .070(1.80) MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 SERIES .004(0.10) MAX. • Weight: 0.0003 ounce, 0.0084 gram • Marking : L33 ABSOLUTE RATINGS@ TJ=25oC, UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL VALUE UNIT VRRm 30 V IO 30 0 IFSM 1 TSTG -65 to + 150 o O p e r a ti ng junc t i o n t e mp e r a ture (No t e 1 ) TJ 150 O S o ld e r i ng t e mp e r a ture TL 260 o Repetitive peak reverse voltage C o nt i nuo us f o rwa r d c urre nt S urg e no n re p e t i t i ve fo r wa rd c urr e nt tp=8.3ms Sinusoidal Storage temperature range mA A C C C 1. Pulse test : tp=5ms, δ < 2% THERMAL CHARACTERISTICS PARAMETER J unc t i o n t o a mb i e nt (N o te 2 ) SYMBOL VALUE RθJA 500 UNIT o C/W 2. On epoxy printed circuit board with recommended pad layout REV.0.0-MAR.3.2010 STAD-APR.26.2010 1 PAGE . 1 BAT30S ELECTRICAL CHARACTERISTICS PA RA ME TE R S YMB O L TE S T C O ND ITIONS TJ= 2 5 oC Re ve r s e le a k a g e c urr e nt (No t e 3 ) I MIN. TYP. MA X . - 0.65 - 0.5 1 3 5 - 7 20 - 18 50 I F= 0 .1 m A - - 240 I F= 1 mA - - 300 I F= 1 0 mA - - 375 I F= 3 0 mA - - 430 I F= 1 0 0 mA - - 500 I F= 2 0 0 mA - - 580 I F= 3 0 0 mA - 530 - V R= 5 V V R= 1 0 V V R= 2 5 V V R= 3 0 V UNIT μA R TJ= 7 0 oC V R= 1 0 V TJ= 8 5 oC F o rwa rd vo lt a g e d ro p (No te 4 ) VF TJ= 2 5 oC mV 3. Pulse test : tp=5ms, δ < 2% 4. Pulse test : tp=380μs, δ < 2% DYNAMIC CHARACTERISTICS PAR AM E T E R To t a l C a p a c i t a nc e REV.0.0-MAR.3.2010 STAD-APR.26.2010 1 S YM B O L CT T E S T C ON D IT ION S V R = 0 V, F = 1 M Hz V R = 1 V, F = 1 M Hz V R = 1 0 V, F = 1 M Hz MIN . T YP. M AX . U N IT - - 65 40 17 pF PAGE . 2 BAT30S 70 1000 Junction Capacitance CJ, pF Reverse Leakage Current IR , µA @ V R = 30V 100 10 1 0.1 0 25 50 75 100 125 150 Junction Temperature T J, °C 60 50 40 30 20 10 0 0.0 2.0 4.0 6.0 8.0 10.0 Reverse Bias Voltage V R, V FIG. 1- Reverse Leakage Current vs. Junction Temperature FIG. 2- Typical Junction Capacitance under Bias Forward Current IF , A 1.000 0.100 T J =125°C T J =25°C 0.010 0.001 0.000 0.100 0.200 0.300 0.400 0.500 Forward Voltage V F, V FIG. 3 Typical Forward Voltage characteristic REV.0.0-MAR.3.2010 STAD-APR.26.2010 1 PAGE . 3 BAT30S MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-MAR.3.2010 STAD-APR.26.2010 1 PAGE . 4