SEMICONDUCTORS BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current 26/09/2012 Value BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C COMSET SEMICONDUCTORS 60 80 100 120 60 80 100 120 Unit V V 5 V 12 A 20 A 1|5 SEMICONDUCTORS BDT65-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings IB Base Current PT Power Dissipation TJ Junction Temperature Ts @ Tmb < 25° Storage Temperature range BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C Value Unit 500 mA 125 Watts 150 °C -65 to +150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case 26/09/2012 COMSET SEMICONDUCTORS Value Unit 1 °C/W 2|5 SEMICONDUCTORS BDT65-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = VCBOmax ICBO Collector Cutoff Current IE= 0 VCB = 1/2 VCBOmax TJ= 150 °C ICEO Collector Cutoff Current IE= 0 VCE = 1/2 VCEOmax IEBO Emitter Cutoff Current VEB= 5 V IC= 0 VCEO Collector-Emitter Breakdown Voltage IC= 30 mA IB= 0 IC= 5 A IB= 20 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 10 A IB= 100 mA 26/09/2012 BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C COMSET SEMICONDUCTORS Min Typ Max Unit - - 0.4 mA - - 2 mA - - 0.2 mA - - 5 mA 60 80 100 120 - - V - - 2 V - - 3 3|5 SEMICONDUCTORS BDT65-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VBE(on) Ratings Base-Emitter Voltage (*) IC= 5 A, VCE= 4 V IF= 5 A VECF C-E Diode Forward Voltage IF= 12 A VCE= 4 V, IC= 1 A hFE DC Current Gain (*) VCE= 4 V, IC= 5 A VCE= 4 V, IC= 12 A COB Output Capacitance IE= 0, VCB = 10 V ftest= 1MHz BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C Min Typ Max Unit - - 2.5 V - 2 V - 2 - - 1500 - 1000 - - - 1000 - - 200 - pF Min Typ Max Unit - 1 6 2.5 10 µs - SWITCHING TIMES Symbol ton toff Ratings turn-on time turn-off time Test Condition(s) IC= 5 A , VCC= 30 V IB1 = -IB2 = 20 mA (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 26/09/2012 COMSET SEMICONDUCTORS 4|5 SEMICONDUCTORS BDT65-A-B-C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Package Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/09/2012 [email protected] COMSET SEMICONDUCTORS 5|5