INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V 1.7 A ID Drain Current-Continuous IDM Drain Current-Single Pulsed 4 A PD Total Dissipation @TC=25℃ 18.1 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website:www.iscsemi.cn 1 MAX UNIT 6.9 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.04mA 2.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 3.5 V VGS=10V; ID=0.5A 3.3 Ω Gate-Source Leakage Current VGS=20V; VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 1 μA VSD Diode forward voltage IF=0.6A, VGS = 0V isc website:www.iscsemi.cn 2 0.9 V isc & iscsemi is registered trademark