Vishay BFR182T Silicon npn planar rf transistor Datasheet

Not for new design, this product will be obsoleted soon
BFR182T / BFR182TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
•
•
•
•
1
Low noise figure
High power gain
e3
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
2
1
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
2
Mechanical Data
Typ: BFR182T
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: RG
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
3
Electrostatic sensitive device.
Observe precautions for handling.
13581
Typ: BFR182TW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WRG
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
VCBO
15
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
2
V
Collector current
IC
35
mA
Base current
IB
5
mA
Ptot
200
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Symbol
Value
Unit
RthJA
450
K/W
Total power dissipation
Test condition
Tamb ≤ 60 °C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Document Number 85025
Rev. 1.4, 08-Sep-08
www.vishay.com
1
BFR182T / BFR182TW
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Max
Unit
Collector-emitter cut-off current
Parameter
VCE = 15 V, VBE = 0
Test condition
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
1
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
Collector-emitter saturation
voltage
IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 6 V, IC = 5 mA
VCE = 8 V, IC = 20 mA
www.vishay.com
2
Symbol
Min
10
VCEsat
hFE
hFE
Typ.
V
0.1
50
0.4
V
90
100
Document Number 85025
Rev. 1.4, 08-Sep-08
BFR182T / BFR182TW
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
VCE = 6 V, IC = 5 mA,
f = 500 MHz
fT
5.5
GHz
VCE = 8 V, IC = 20 mA,
f = 500 MHz
fT
7.5
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.3
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
0.2
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.65
pF
Noise figure
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 900 MHz
F
1.5
dB
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 1.75 GHz
F
2.0
dB
VCE = 8 V, IC = 20 mA,
ZS = 50 Ω, ZL = ZLopt,
f = 900 MHz
Gpe
15
dB
VCE = 8 V, IC = 20 mA,
ZS = 50 Ω, ZL = ZLopt,
f = 1.75 GHz
Gpe
11
dB
VCE = 8 V, IC = 20 mA,
f = 900 MHz, Z0 = 50 Ω
|S21e|2
14
dB
Transition frequency
Power gain
Transducer gain
0.175 (0.007)
0.098 (0.005)
0.1 (0.004) max.
2.6 (0.102)
2.35 (0.092)
0.4 (0.016)
0.4 (0.016)
0.95 (0.037)
1.15 (0.045)
Package Dimensions in mm (Inches)
ISO Method E
3.1 (0.122)
Mounting Pad Layout
2.8 (0.110)
0.52 (0.020)
0.4 (0.016)
C
B
0.95 (0.037)
1.20 (0.047)
1.43 (0.056)
0.9 (0.035)
2.0 (0.079)
E
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
9511346
Document Number 85025
Rev. 1.4, 08-Sep-08
www.vishay.com
3
BFR182T / BFR182TW
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12236
www.vishay.com
4
Document Number 85025
Rev. 1.4, 08-Sep-08
BFR182T / BFR182TW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85025
Rev. 1.4, 08-Sep-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
Similar pages