IRF IRH9150 Simple drive requirement Datasheet

PD-90879D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AE)
IRH9150
100V, P-CHANNEL
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRH9150
IRH93150
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.075Ω
0.075Ω
ID
-22A
-22A
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of
proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications such
as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease
of paralleling and temperature stability of electrical
parameters.
TO-204AE
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-22
-14
-88
150
1.2
± 20
500
-22
1.5
-23
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
g
For footnotes refer to the last page
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1
05/13/14
IRH9150
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
—
—
V
—
-0.093
—
V/°C
—
—
-2.0
11
—
—
—
—
—
—
—
—
0.075
0.080
-4.0
—
-25
-250
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
200
35
48
40
150
100
190
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
nC
VGS = -12V, ID = -14A Ã
VGS = -12V, ID = -22A
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -14A Ã
VDS = -80V ,VGS = 0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -22A
VDS = -50V
ns
VDD = -50V, ID = -22A
VGS =-12V, RG = 2.35Ω
V
S
µA
nA
nH
Measured from Drain lead (6mm /0.25in
from package) to Source lead (6mm/0.25
in. from Package) with Source wires
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4300
1100
310
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-22
-88
-3.0
250
1.5
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -22A, VGS = 0V Ã
Tj = 25°C, IF = -22A, di/dt ≤ -100A/µs
VDD ≤ -50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.83
—
30
0.12 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRH9150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance
Diode Forward Voltage Ã
300K Rads (Si)2 Units
Min
Max
Test Conditions
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.075
-100
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.085
nA
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS = -80V, VGS =0V
VGS = -12V, ID = -14A
—
-3.0
—
-3.0
V
VGS = 0V, IS = -22A
V
1. Part number IRH9150
2. Part number IRH93150
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LE T
Me V/(mg/cm²))
Ene rgy
(Me V)
Range
(µm)
VD S(V)
@VGS=0V
@VGS=5V
@VGS=10V
@VGS=15V
@VGS=20V
Cu
28
285
43
-100
-100
-100
-70
-60
Br
36.8
305
39
-100
-100
-70
-50
-40
I
59.9
345
32.8
-60
—
—
—
—
-120
VDS
-100
-80
Cu
-60
Br
-40
I
-20
0
0
5
10
15
20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRH9150
Pre-Irradiation
100
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
-5.0V
20µs PULSE WIDTH
TJ = 25 °C
10
1
10
-5.0V
10
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Drain-to-Source Current (A)
3.0
TJ = 25 ° C
- I D,
TJ = 150 ° C
V DS = -50V
20µs PULSE WIDTH
6
7
8
9
- VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
100
Fig 2. Typical Output Characteristics
100
5
20µs PULSE WIDTH
TJ = 150 ° C
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
10
ID = -22A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
7000
20
5000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
C, Capacitance (pF)
IRH9150
Ciss
4000
3000
Coss
2000
1000
Crss
0
1
10
VDS =-80V
VDS =-50V
VDS =-20V
16
12
8
4
0
100
ID = -22A
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
120
160
200
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
-I D, Drain-to-Source Current (A)
100
-ISD , Reverse Drain Current (A)
80
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
10
TJ = 25 ° C
V GS = 0 V
1
0.0
1.0
2.0
3.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
1ms
10
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
4.0
1
DC
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRH9150
Pre-Irradiation
24
V GS
20
-ID , Drain Current (A)
RD
VDS
D.U.T.
RG
-
+
16
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
12
8
Fig 10a. Switching Time Test Circuit
4
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
90%
VDS
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.01
0.001
0.00001
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D =t1 / t 2
2. Peak TJ =P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRH9150
IAS
VDD
A
DRIVER
0.01Ω
tp
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
VGS
-20V
1200
L
VDS
ID
-9.8A
-14A
BOTTOM -22A
TOP
1000
800
600
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-12 V
QGS
12V
.2µF
.3µF
D.U.T.
QGD
+VDS
VGS
VG
-3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
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Fig 13b. Gate Charge Test Circuit
7
IRH9150
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L = 2.06mH
Peak IL = -22A, V GS =-12V
 ISD ≤ -22A, di/dt ≤ -450A/µs,
VDD ≤ -100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with V DS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-204AE (TO-3)
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2014
8
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