MOTOROLA MRF15060 Rf power bipolar transistor Datasheet

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by MRF15060/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of
these devices makes them ideal for large–signal, common–emitter class A and
class AB amplifier applications in 26 volt amplitude modulated and multi–carrier
base station equipment.
60 W, 1.49 GHz
RF POWER
BIPOLAR
TRANSISTORS
• Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10 dB
Efficiency — 33%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP)
Output Power
CASE 451–04, STYLE 1
(MRF15060)
CASE 451A–01, STYLE 1
(MF15060S)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
25
Vdc
Collector–Emitter Voltage
VCES
60
Vdc
Emitter–Base Voltage
VEBO
60
Adc
Collector Current – Continuous
IC
8
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70°C
PD
185
1.43
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
0.7
°C/W
Operating Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1996
MRF15060 MRF15060S
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
25
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0 mAdc)
V(BR)EBO
3
3.5
—
Vdc
ICES
—
—
10
mAdc
hFE
20
40
80
—
Cob
—
55
—
pF
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Gpe
10
11.7
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
η
33
38
—
dB
3rd Order Intermodulation Distortion
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
IMD
—
– 32
– 28
dB
Input Return Loss
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
IRL
12
20
—
dB
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
FUNCTIONAL TESTS (In Motorola Test Circuit. See Figure 1)
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz,
VSWR = 3:1, at All Phase Angles)
ψ
No Degradation in Output Power
(1) For information only. This part is collector matched.
MRF15060 MRF15060S
2
MOTOROLA RF DEVICE DATA
VBASE
Q1
R1
+
C17
C18
D1
Q2
C10
R2
C11
R3
B1
C6
+C12
C13
B2
C14
+C15 +C16
VCC
R4
C7
C8
C9
L2
L1
C3
TL4
TL3
TL1
OUTPUT
TL2
INPUT
C2
C1
DUT
C5
C4
B1, B2
C1, C2, C6, C8
C3
C4, C5
C7, C9
C10, C13
C11, C14, C17
C12, C15, C18
C16
Short RF Bead Fair Rite–2743019447
18 pF, Chip Capacitor
3.9 pF, Chip Capacitor
0.6–4.5 pF, Variable Capacitor
100 pF, Chip Capacitor
1000 pF, Chip Capacitor
0.1 µF, 50 Vdc Ceramic Capacitor
10 µF, 50 Vdc Electrolytic Capacitor
250 µF, 50 Vdc Electrolytic Capacitor
D1
L1, L2
Q1
Q2
R1
R2
R3, R4
TL1–TL4
Board
Diode, 1N4003
3 Turns, 20 AWG, IDIA 0.102″ (17.7 nH)
Transistor, NPN BD135
Transistor, PNP BD136
120 Ω, 1/4 W Resistor
51 Ω, 1/4 W, Chip Resistor
4 x 39 Ω, 1/8 W Chip Resistors
Microstrip Line See Photomaster
1/32″ Glass Teflon, Arlon GX–0300–55–22,
εr = 2.55
Figure 1. MRF15060 RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
MRF15060 MRF15060S
3
TYPICAL CHARACTERISTICS
80
70
Gpe
12
50
11.5
40
Pout
30
11
20
VCC = 26 Vdc
ICQ = 200 mA
f = 1490.0 MHz
10
0
1
0
70 Pin = 5 W
60
50
2.5 W
40
20
1W
10
10.5
3
5
2
4
Pin, INPUT POWER (WATTS)
6
0
1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600
f, FREQUENCY (MHz)
7
Figure 3. Output Power versus Frequency
–10
14
– 20
– 25
– 30
13
3rd Order
G pe , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Power & Power Gain
versus Input Power
– 35
5th Order
– 40
– 45
– 50
– 55
– 60
VCC = 26 Vdc
ICQ = 200 mA
f1 = 1490.0 MHz
f2 = 1490.1 MHz
7th Order
– 65
– 70
0
10
30
50
20
40
Pout, OUTPUT POWER (WATTS) PEP
60
–15
Gpe
12
–20
11
–25
IMD
10
–30
ICQ = 200 mA
f1 = 1490.0 MHz
f2 = 1490.1 MHz
9
8
70
18
20
Figure 4. Intermodulation Distortion
versus Output Power
– 20
14
– 25
13
– 30
– 35
– 40
ICQ = 100 mA
200 mA
400 mA
600 mA
– 45
– 50
0.1
1
VCC = 26 Vdc
f1 = 1490.0 MHz
f2 = 1490.1 MHz
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion
versus Output Power
MRF15060 MRF15060S
4
–35
22
24
26
VCC, SUPPLY VOLTAGE (Vdc)
28
–40
30
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
G pe , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
VCC = 26 Vdc
ICQ = 200 mA
Single Tone
30
ICQ = 600 mA
12
11
200 mA
10
9
100
400 mA
8
VCC = 26 Vdc
f1 = 1490.0 MHz
f2 = 1490.1 MHz
100 mA
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
IMD, INTERMODULATION DISTORTION (dBc)
60
Pout , OUTPUT POWER (WATTS)
12.5
G pe , GAIN (dB)
Pout , OUTPUT POWER (WATTS)
80
13
η, EFFICIENCY (%)
45
40
η
VCC = 26 Vdc
ICQ = 200 mA
Pout = 60 W (PEP)
10
9
30
VSWR
1450
1475
1500
f, FREQUENCY (MHz)
25
1550
1525
3.0
35
Figure 8. Performance in Broadband Circuit
INPUT VSWR
11
2.5
2.0
FUNDAMENTAL
40
30
20
3rd ORDER
10
0
VCE = 26 Vdc
IC = 3 A
f1 = 1490.0 MHz
f2 = 1490.1 MHz
– 10
– 20
1.5
– 30
1.0
– 40
15
20
25
30
35
40
Pin, INPUT POWER (dBm)
45
50
Figure 9. Class A Third Order Intercept Point
8
IC, COLLECTOR CURRENT (Adc)
6
Tflange = 75°C
Tflange = 100°C
4
2
TJ = 175°C
0
0
4
8
12
16
20
24
VCE, COLLECTOR SUPPLY VOLTAGE (Vdc)
BREAKDOWN LIMITED
G pe , POWER GAIN (dB)
12
Pout , OUTPUT POWER (dBm)
50
Gpe
8
1425
60
50
28
Figure 10. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
MRF15060 MRF15060S
5
1400 MHz
1450
1500
1400 MHz
1550
Zin
1600
1450
1500
ZOL*
1550
1600
Zo = 10 Ω
VCC = 26 Vdc, ICQ = 200 mA, Pout = 60 Watts PEP
f
MHz
Zin(1)
Ohms
ZOL*
Ohms
1400
1.07 + j3.4
2.25 + j3.1
1450
1.04 + j3.0
2.37 + j2.4
1500
1.01 + j2.7
2.46 + j2.1
1550
0.99 + j2.3
2.54 + j1.4
1600
0.97 + j1.9
2.66 + j1.0
Zin(1)= Conjugate of fixture base impedance.
ZOL* = Conjugate of the optimum load impedance at
given output power, voltage, bias current and frequency.
Figure 11. Series Equivalent Input and Output Impedence
MRF15060 MRF15060S
6
MOTOROLA RF DEVICE DATA
Q2
C17
D1
R1
C11
C12
C14
C13
R4
C15
C16
C10
C18
B2
R3
R2
C9
B1
TL1
C1
C8
C6
C7
Q1
C3
L2
L1
W1
W2
TL2
C2
TL4
TL3
C4
C5
MRF15060
Figure 12. MRF15060 Component Parts Layout
Table 1. Typical Common Emitter S–Parameters (VCC = 26 V)
ID = 3.0 A
f
MHz
S11
S21
∠φ
163
162
0.30
0.957
161
1150
0.956
1200
S22
∠φ
93
|S12|
0.018
87
0.018
0.31
82
160
0.34
0.955
158
1250
0.953
1300
0.941
1350
1000
1050
0.958
1100
∠φ
S12
|S21|
0.28
|S11|
0.964
∠φ
73
|S22|
0.991
178
76
0.989
178
0.017
81
0.987
179
76
0.022
73
0.982
179
0.38
70
0.023
67
0.969
179
157
0.42
62
0.022
57
0.956
180
155
0.47
53
0.019
60
0.937
180
0.922
154
0.55
43
0.015
64
0.915
-180
1400
0.920
153
0.67
28
0.013
66
0.891
-180
1450
0.901
152
0.80
6
0.012
71
0.880
-180
1500
0.903
151
0.83
-24
0.007
76
0.911
-179
1550
0.906
152
0.70
-54
0.008
89
0.954
-180
1600
0.913
153
0.51
-75
0.009
92
0.971
-180
1650
0.921
154
0.38
-89
0.010
95
0.973
-179
1700
0.946
154
0.29
-98
0.012
97
0.974
-179
1750
0.974
155
0.34
-107
0.014
105
0.976
-178
1800
0.968
154
0.19
-115
0.016
116
0.977
-178
1850
0.966
153
0.16
-121
0.018
138
0.978
-177
1900
0.947
152
0.14
-128
0.021
143
0.980
-177
1950
0.918
151
0.12
-138
0.027
151
0.982
-177
2000
0.912
150
0.09
-146
0.031
159
0.985
-176
MOTOROLA RF DEVICE DATA
MRF15060 MRF15060S
7
PACKAGE DIMENSIONS
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
–B–
R
DIM
A
B
C
D
E
F
G
H
K
N
Q
R
3
2
Q
K
0.25 (0.010)
N
H
2 PL
D
M
T A
M
B
M
F
E
C
SEATING
PLANE
–T–
INCHES
MIN
MAX
0.995
1.005
0.380
0.390
0.170
0.205
0.455
0.465
0.060
0.075
0.004
0.006
0.800 BSC
0.078
0.090
0.117
0.137
0.595
0.605
0.120
0.130
0.395
0.410
MILLIMETERS
MIN
MAX
25.27
25.53
9.65
9.91
4.32
5.21
11.56
11.81
1.52
1.91
0.10
0.15
20.32 BSC
1.98
2.29
2.97
3.48
15.11
15.37
3.05
3.30
10.03
10.41
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
–A–
CASE 451–04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
–B–
K
DIM
A
B
C
D
E
F
H
K
N
2
D
N
H
F
E
C
–A–
–T–
SEATING
PLANE
3
INCHES
MIN
MAX
0.615
0.625
0.395
0.410
0.170
0.205
0.455
0.465
0.060
0.075
0.004
0.006
0.078
0.090
0.117
0.137
0.595
0.605
MILLIMETERS
MIN
MAX
15.62
15.88
10.03
10.41
4.32
5.21
11.56
11.81
1.52
1.91
0.10
0.15
1.98
2.29
2.97
3.48
15.11
15.37
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 451A–01
ISSUE O
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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MRF15060 MRF15060S
8
◊
*MRF15060/D*
MRF15060/D
MOTOROLA RF DEVICE
DATA