Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type with 2devices (PNP transistor and Shottky barrier diode) contained in one package, facilitating high-density mounting. · The FP104 is formed with a chips, one being equivalent to the 2SA1729 and a chip being eqivalent to the SB05-05CP placed in one package. unit:mm 2088A [FP104] 1:Base 2,4,6,7:Common (Collcector, Cathode) 3:Emitter 5:Anode SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO VCEO –50 V Collector-to-Emitter Voltage –40 V Emitter-to-Base Voltage VEBO –5 V –1.5 A Collector Current IC Collector Current (Pulse) ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg –3 –300 Mounted on ceramic board (250mm2×0.8mm) A mA 1.3 W 150 ˚C –55 to +150 ˚C VRRM VRSM 50 V 55 V IO 500 mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current IFSM 5 A Junction Temperature Tj 50Hz sine wave, 1cycle –55 to +125 ˚C Storage Temperature Tstg –55 to +125 ˚C Marking:202 Electrical Connection Continued on next page. 1:Base 2,4,6,7:Common (Collcector, Cathode) 3:Emitter 5:Anode (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/53094TH (KOTO) A8-9345 No.4655-1/4 FP104 Continued from preceding page. Electrical Characteristics at Ta=25˚C .Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 DC Current Gain hFE2 Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage fT Cob VCE(sat) VBE(sat) VCB=–40V, IE=0 VEB=–3V, IC=0 VCE=–2V, IC=–100mA VCE=–2V, IC=–1.5A 100 –1.0 µA –1.0 µA 280 25 VCE=–2V, IC=–100mA 300 VCE=–10V, f=1MHz MHz 18 pF IC=–800mA, IB=–40mA –0.3 –0.8 IC=–800mA, IB=–40mA –0.9 –1.3 V V C-B Breakdown Voltage V(BR)CBO IC=–10µA, IE=0 –50 V C-E Breakdown Voltage V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IC=–10µA, IC=0 –40 V E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time –5 V ton tstg See specified Test Circuit 50 ns See specified Test Circuit 120 ns tf See specified Test Circuit 150 ns [SBD] Reverse Voltage VR Forward Voltage VF IR Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance C trr Rthj-a IR=200µA IF=500mA 50 V VR=25V VR=10V, f=1MHz V 50 µA 22 IF=IR=100mA, See specified Test Circuit Mounted on ceramic board (250mm2×0.8mm) 0.55 pF 10 120 ns ˚C/W Switching Time Test Circuit (TR) (SBD) No.4655-2/4 FP104 No.4655-3/4 FP104 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4655-4/4