Micronas HAL543UA-E Hall-effect sensor family Datasheet

Hardware
Documentation
Data Sheet
®
HAL 54x
Hall-Effect Sensor Family
Edition Feb. 12, 2009
DSH000023_003EN
HAL54x
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL54x
DATA SHEET
Contents, continued
Page
Section
Title
4
4
4
5
5
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
1.7.
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability and Welding
Pin Connections
6
2.
Functional Description
7
7
12
12
12
12
13
14
15
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics Overview
19
19
21
23
25
4.
4.1.
4.2.
4.3.
4.4.
Type Description
HAL542
HAL543
HAL546
HAL548
27
27
27
27
27
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-up Behavior
EMC and ESD
28
6.
Data Sheet History
Micronas
Feb. 12, 2009; 000023_003ENDS
3
HAL54x
DATA SHEET
Hall-Effect Sensor Family
– ideal sensor for applications in extreme automotive
and industrial environments
Release Note: Revision bars indicate significant
changes to the previous edition.
– EMC corresponding to ISO 7637
1.2. Family Overview
1. Introduction
The HAL54x family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain output transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accordingly, the output transistor is switched on or off.
In addition to the HAL50x/51x family, the HAL54x features a power-on and undervoltage reset.
The sensors of this family differ in the switching behavior and the switching points.
The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are
robust against mechanical stress effects.
The sensors are designed for industrial and automotive applications and operate with supply voltages
from 4.3 V to 24 V in the ambient temperature range
from −40°C up to 150°C.
All sensors are available in the SMD-package
SOT89B-1 and in the leaded versions TO92UA-1 and
TO92UA-2.
1.1. Features
– switching offset compensation at typically 62 kHz
– operates from 4.3 V to 24 V supply voltage
The types differ according to the magnetic flux density
values for the magnetic switching points and the temperature behavior of the magnetic switching points.
Type
Switching
Behavior
Sensitivity
see
Page
542
latching
high
19
543
unipolar
low
21
546
unipolar
high
23
548
unipolar
medium
25
Latching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
Unipolar Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– constant switching points over a wide supply voltage range
– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient
of the magnetic characteristics
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HAL54x
DATA SHEET
1.3. Marking Code
1.5. Hall Sensor Package Codes
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
Type
Temperature Range
K
E
HAL542
542K
542E
HAL543
543K
543E
HAL546
546K
546E
HAL548
548K
548E
Type: 54x
Example: HAL542UA-K
→ Type: 542
→ Package: TO92UA
→ Temperature Range: TJ = −40 °C to +140 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
1.6. Solderability and Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
E: TJ = −40 °C to +100 °C
Note: Due to power dissipation, there is a difference
between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on
page 27 for details.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.7. Pin Connections
1 VDD
3
OUT
2, 4 GND
Fig. 1–1: Pin configuration
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HAL54x
DATA SHEET
2. Functional Description
HAL54x
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the magnetic switching level to switching of output can vary
between zero and 1/fosc.
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Power-on &
Undervoltage
Reset
Short Circuit &
Overvoltage
Protection
Comparator
OUT
Switch
Output
3
Clock
GND
2
Fig. 2–1: HAL54x block diagram
fosc
t
B
BON
t
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD pin together with external series
resistors. Reverse current is limited at the VDD pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD pin for
reverse voltages ranging from 0 V to −15 V.
VOUT
VOH
VOL
t
IDD
A built-in reset-circuit clamps the output to the “high”
state (reset state) during power-on or when the supply
voltage drops below a reset voltage of Vreset < 4.3 V.
For supply voltages between Vreset and 4.3 V, the output state of the device responds to the magnetic field.
For supply voltages above 4.3 V, the device works
according to the specified characteristics.
6
1/fosc = 9 μs
tf
t
Fig. 2–2: Timing diagram
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HAL54x
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
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HAL54x
DATA SHEET
Fig. 3–2:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
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HAL54x
DATA SHEET
Fig. 3–3:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
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Feb. 12, 2009; DSH000023_003EN
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HAL54x
DATA SHEET
Fig. 3–4:
TO92UA-1: Dimensions ammopack inline, spread
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HAL54x
DATA SHEET
Fig. 3–5:
TO92UA-2: Dimensions ammopack inline, not spread
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HAL54x
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT89B-1
TO92UA-1/-2
y
0.95 mm nominal
1.0 mm nominal
A4
0.3 mm nominal
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−15
281)
V
VO
Output Voltage
3
−0.3
281)
V
IO
Continuous Output On Current
3
−
501)
mA
TJ
Junction Temperature Range
−40
170
°C
1)
as long as TJmax is not exceeded
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
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HAL54x
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4.3
24
V
IO
Continuous Output On Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
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HAL54x
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
2.3
3
4.2
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
−
28
32
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage
3
−
130
280
mV
IOL = 20 mA, TJ = 25 °C
VOL
Output Voltage over
Temperature Range
3
−
130
400
mV
IOL = 20 mA
IOH
Output Leakage Current
3
−
0.06
0.1
μA
Output switched off,
TJ = 25 °C, VOH = 4.3 to 24 V
IOH
Output Leakage Current over
Temperature Range
3
−
−
10
μA
Output switched off,
TJ ≤150 °C, VOH = 4.3 to 24V
fosc
Internal Oscillator
Chopper Frequency
−
−
62
−
kHz
TJ = 25 °C,
VDD = 4.5 to 24 V
Vreset
Reset Voltage
1
−
3.8
−
V
ten(O)
Enable Time of Output after
Setting of VDD
1
−
70
−
μs
VDD = 12 V 1)
tr
Output Rise Time
3
−
75
400
ns
tf
Output Fall Time
3
−
50
400
ns
VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
RthJSB
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside
−
−
150
200
K/W
RthJA
case
TO92UA-1,
TO92UA-2
Thermal Resistance Junction
to Soldering Point
−
−
150
200
K/W
1)
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–6
B > BON + 2 mT or B < BOFF - 2 mT
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
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HAL54x
DATA SHEET
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Parameter
Switching Type
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
HAL542
−40 °C
1
2.8
5
−5
−2.8
−1
4.5
5.85
7.2
mT
latching
25 °C
1
2.6
4.5
−4.5
−2.6
−1
4.5
5.5
6.5
mT
140 °C
0.6
2.4
4.6
−4.6
−2.4
−0.6
3.3
4.8
6.2
mT
HAL543
−40 °C
21
27
33
15
21
27
4
6
8
mT
unipolar
25 °C
21
27
33
15
21
27
4
6
8
mT
140 °C
21
27
33
15
21
27
4
5.5
8
mT
HAL546
−40 °C
4.3
5.9
7.7
2.1
3.8
5.5
1.5
2.1
2.9
mT
unipolar
25 °C
3.8
5.5
7.2
2
3.5
5
1.4
2
2.8
mT
140 °C
3.2
4.8
6.9
1.8
3.1
5.5
1
1.7
2.6
mT
HAL548
−40 °C
12
19
24
6
13
18
4
6
8
mT
unipolar
25 °C
12
18
24
6
12
18
4
6
8
mT
140 °C
12
17
24
6
11
18
4
6
8
mT
Note: For detailed descriptions of the individual types, see pages 19 and following.
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Feb. 12, 2009; DSH000023_003EN
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HAL54x
DATA SHEET
mA
25
mA
5
HAL 54x
HAL 54x
20
IDD
IDD
TA = –40 °C
15
4
TA = 25 °C
VDD = 24 V
VDD = 12 V
TA=140 °C
10
3
5
2
0
VDD = 3.8 V
–5
1
–10
–15
–15–10 –5 0
0
–50
5 10 15 20 25 30 35 V
0
50
100
VDD
200 °C
TA
Fig. 3–7: Typical supply current
versus supply voltage
mA
5.0
150
Fig. 3–9: Typical supply current
versus ambient temperature
kHz
100
HAL 54x
4.5
HAL 54x
90
IDD 4.0
fosc
TA = –40 °C
3.5
80
VDD = 3.8 V
70
TA = 25 °C
3.0
60
TA = 100 °C
2.5
50
VDD = 4.5 V...24 V
TA = 140 °C
2.0
40
1.5
30
1.0
20
0.5
10
0
1
2
3
4
5
6
7
0
–50
8 V
VDD
Fig. 3–8: Typical supply current
versus supply voltage
16
0
50
100
150
200 °C
TA
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
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HAL54x
DATA SHEET
kHz
100
mV
350
HAL 54x
HAL 54x
IO = 20 mA
90
300
fosc 80
VOL
250
70
TA = 25 °C
60
TA = –40 °C
50
200
TA = 100 °C
150
TA = 25 °C
TA = 140 °C
40
30
TA = –40 °C
100
20
50
10
0
0
5
10
15
20
25
0
30 V
0
5
10
15
20
VDD
30 V
VDD
Fig. 3–11: Typ. internal chopper frequency
versus supply voltage
kHz
100
25
Fig. 3–13: Typical output low voltage
versus supply voltage
mV
400
HAL 54x
HAL 54x
IO = 20 mA
90
fosc
VDD = 3.8 V
VOL
80
300
VDD = 4.5 V
70
TA = 25 °C
60
TA = –40 °C
50
TA = 140 °C
VDD = 24 V
200
40
30
100
20
10
0
3
3.5
4.0
4.5
5.0
5.5
0
–50
6.0 V
VDD
50
100
150
200 °C
TA
Fig. 3–12: Typ. internal chopper frequency
versus supply voltage
Micronas
0
Fig. 3–14: Typical output low voltage
versus ambient temperature
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HAL54x
DATA SHEET
μA
104
dBμA
30
HAL 54x
HAL 54x
VDD = 12 V
TA = 25 °C
Quasi-PeakMeasurement
103
IOH 102
101
IDD
TA = 150 °C
20
max. spurious
signals
10
100
10–1
TA = 100 °C
0
10–2
10–3
10–4
TA = 25 °C
–10
TA = –40 °C
–20
10–5
10–6
15
20
25
30
–30
0.01
35 V
0.10
1.00
1
f
VOH
Fig. 3–15: Typ. output high current
versus output voltage
μA
Fig. 3–17: Typ. spectrum of supply current
dBμV
80
HAL 54x
102
HAL 54x
VP = 12 V
TA = 25 °C
Quasi-PeakMeasurement
test circuit 2
70
101
IOH
10.00
100.00
10
100 1000.00
1000 MHz
VDD
VOH = 24 V
60
100
50
max. spurious
signals
10–1
40
VOH = 3.8 V
10–2
30
10–3
20
10–4
10–5
–50
10
0
50
100
150
0
0.01
200 °C
1.00
1
10.00
100.00
10
100 1000.00
1000 MHz
f
TA
Fig. 3–16: Typical output leakage current
versus ambient temperature
18
0.10
Fig. 3–18: Typ. spectrum of supply voltage
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HAL542
DATA SHEET
4. Type Description
Applications
4.1. HAL542
The HAL542 is the optimal sensor for applications with
alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
The HAL542 is the most sensitive latching sensor of
this family (see Fig. 4–1).
– applications with large air gap or weak magnets,
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
– rotating speed measurement,
– commutation of brushless DC motors, and
– CAM shaft sensors, and
– magnetic encoders.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: latching
VOL
– high sensitivity
BOFF
– typical BON: 2.6 mT at room temperature
– typical BOFF: −2.6 mT at room temperature
0
B
BON
Fig. 4–1: Definition of magnetic switching points for
the HAL542
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
1
2.8
5
−5
−2.8
−1
4.5
5.85
7.2
25 °C
1
2.6
4.5
−4.5
−2.6
−1
4.5
5.5
6.5
100 °C
0.95
2.5
4.4
−4.4
−2.5
−0.95
3.7
5.0
6.3
0
mT
140 °C
0.6
2.4
4.6
−4.6
−2.4
−0.6
3.3
4.8
6.2
0
mT
0
−1.5
0
mT
1.5
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Feb. 12, 2009; DSH000023_003EN
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HAL542
DATA SHEET
mT
6
BON
BOFF
mT
6
HAL 542
BONmax
BON
BOFF
4
HAL 542
4
BON
BONtyp
2
2
BONmin
TA = –40 °C
TA = 25 °C
0
VDD = 3.8 V
0
TA = 100 °C
VDD = 4.3 V... 24 V
TA = 140 °C
BOFFmax
–2
–2
BOFFtyp
BOFF
–4
–4
BOFFmin
–6
0
5
10
15
20
25
30 V
–6
–50
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
Fig. 4–3: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
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Feb. 12, 2009; DSH000023_003EN
Micronas
HAL543
DATA SHEET
4.2. HAL543
Applications
The HAL543 is the most insensitive unipolar sensor of
this family (see Fig. 4–4).
The HAL543 is the optimal sensor for applications with
unipolar magnetic signals and large magnetic amplitude at the sensor position such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– position and end-point detection,
– contactless solution to replace microswitches,
– rotating speed measurement.
Output Voltage
Magnetic Features:
VO
– switching type: unipolar
BHYS
– low sensitivity
– typical BON: 27 mT at room temperature
– typical BOFF: 21 mT at room temperature
VOL
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
0
– points is −1000 ppm/K
BOFF
B
BON
Fig. 4–4: Definition of magnetic switching points for
the HAL543
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
21
27
33
15
21
27
4
6
8
−
24
−
mT
25 °C
21
27
33
15
21
27
4
6
8
18
24
30
mT
100 °C
21
27
33
15
21
27
4
6
8
−
24
−
mT
140 °C
21
27
33
15
21
27
4
5.5
8
−
24
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Feb. 12, 2009; DSH000023_003EN
21
HAL543
DATA SHEET
mT
30
HAL 543
mT
40
HAL 543
BON
28
BON
BOFF 26
BON
BOFF 35
BONmax
24
30
22
BOFFmax
20
BONtyp
25
BOFF
VDD = 4.3 V... 24 V
18
BONmin
TA = –40 °C
16
20
TA = 25 °C
BOFFtyp
TA = 100 °C
14
TA = 140 °C
15
BOFFmin
12
10
0
5
10
15
20
25
30 V
10
–50
VDD
0
50
100
150
200 °C
TA, TJ
Fig. 4–5: Typ. magnetic switching points
versus supply voltage
Fig. 4–6: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
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Feb. 12, 2009; DSH000023_003EN
Micronas
HAL546
DATA SHEET
4.3. HAL546
Applications
The HAL546 is a quite sensitive unipolar sensor (see
Fig. 4–7).
The HAL546 is the optimal sensor for applications with
one magnetic polarity such as:
– solid state switches,
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– contactless solution to replace micro-switches, and
– rotating speed measurement.
Output Voltage
Magnetic Features:
VO
– switching type: unipolar
BHYS
– high sensitivity
– typical BON: 5.5 mT at room temperature
VOL
– typical BOFF: 3.5 mT at room temperature
0
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
BOFF
B
BON
Fig. 4–7: Definition of magnetic switching points for
the HAL546
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K.
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
4.3
5.9
7.7
2.1
3.8
5.5
1.5
2.1
2.9
−
4.9
−
mT
25 °C
3.8
5.5
7.2
2
3.5
5
1.4
2
2.8
2.9
4.5
6.1
mT
100 °C
3.5
5.3
7
1.9
3.3
5.4
1.1
1.9
2.6
−
4.3
−
mT
140 °C
3.2
4.8
6.9
1.8
3.1
5.5
1
1.7
2.6
−
4
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Feb. 12, 2009; 000023_003EN
23
HAL546
DATA SHEET
mT
8
BON
BOFF
mT
8
HAL 546
7
BON
BOFF
BON
6
HAL 546
BONmax
7
6
BOFFmax
5
5
BOFF
4
BONtyp
VDD = 4.3 V... 24 V
4
BONmin
BOFFtyp
3
3
TA = –40 °C
2
2
TA = 25 °C
BOFFmin
TA = 100 °C
1
1
TA = 140 °C
0
0
5
10
15
20
25
0
–50
30 V
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–8: Typ. magnetic switching points
versus supply voltage
Fig. 4–9: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
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Feb. 12, 2009; DSH000023_003EN
Micronas
HAL548
DATA SHEET
4.4. HAL548
Applications
The HAL548 is a unipolar switching sensor (see
Fig. 4–10).
The HAL548 is the ideal sensor for all applications
with one magnetic polarity and weak magnetic amplitude at the sensor position such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Magnetic Features:
Output Voltage
– switching type: unipolar,
VO
– medium sensitivity
BHYS
– typical BON: 18 mT at room temperature
– typical BOFF: 12 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
VOL
0
BOFF
B
BON
Fig. 4–10: Definition of magnetic switching points for
the HAL548
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
12
19
24
6
13
18
4
6
8
−
16
−
mT
25 °C
12
18
24
6
12
18
4
6
8
9
15
21
mT
100 °C
12
18
24
6
12
18
4
6
8
−
15
−
mT
140 °C
12
17
24
6
11
18
4
6
8
−
14
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Feb. 12, 2009; DSH000023_003EN
25
HAL548
DATA SHEET
mT
20
HAL 548
mT
30
HAL 548
BON
BON 18
BOFF
BON
BOFF 25
BONmax
16
20
14
BOFFmax
BOFF
12
BONtyp
15
VDD = 4.3 V... 24 V
BONmin
BOFFtyp
10
8
TA = 25 °C
TA = 100 °C
6
4
10
TA = –40 °C
BOFFmin
5
TA = 140 °C
0
5
10
15
20
25
0
–50
30 V
VDD
0
50
100
150
200 °C
TA, TJ
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
Fig. 4–12: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
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Micronas
HAL54x
DATA SHEET
5. Application Notes
5.3. Start-up Behavior
5.1. Ambient Temperature
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the characteristics table (see page 14).
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = IDD × VDD × R th
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
During the initialization time, the output state for the
HAL54x is “Off-state” (i.e. Output High). After ten(O),
the output will be high. The output will be switched to
low if the applied magnetic field B is above BON.
5.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as possible to the Hall sensor.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
220 Ω
1
VEMC
VP
T Amax = T Jmax – ΔT
RL
VDD
1.2 kΩ
OUT
3
4.7 nF
20 pF
2 GND
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13).
Fig. 5–1: Test circuit for EMC investigations
Supply Voltage Below 4.3 V
The devices contain a Power-on Reset (POR) and an
undervoltage reset. For VDD < Vreset the output state is
high. For Vreset < VDD < 4.3 V the device responds to
the magnetic field according to the specified magnetic
characteristics.
Note: The functionality of the sensor below 4.3 V is not
tested. For special test conditions, please contact Micronas.
Micronas
Feb. 12, 2009; DSH000023_003EN
27
HAL54x
DATA SHEET
6. Data Sheet History
1. Data sheet: “HAL54x Hall Effect Sensor Family”,
Nov. 27, 2002, 6251-605-1DS. First release of the
data sheet.
2. Data Sheet: “HAL54x Hall-Effect Sensor Family”,
Sept. 13, 2004, DSH000023_001EN. Second
release of the data sheet. Major changes:
– new package diagrams for SOT89B-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
3. Data Sheet: “HAL54x Hall-Effect Sensor Family”,
Dec. 5, 2008, DSH000023_002EN. Third release of
the data sheet. Major changes:
– Section 1.6. on page 5 “Solderability and Welding”
updated.
– Fig. 3–6: Recommended footprint SOT89-B1 added
– all package diagrams updated.
4. Data Sheet: “HAL54x Hall-Effect Sensor Family”,
Feb. 12, 2009, DSH000023_003EN. Fourth release
of the data sheet. Minor changes:
– Section 3.3. “Positions of Sensitive Areas” updated
(parameter A4 for SOT89-B1 was added).
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
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Micronas
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