Suntac IRF640 Powertr mosfet Datasheet

IRF640
POWERTR MOSFET
GENERAL DESCRIPTION
FEATURES
This Power MOSFET is designed for low voltage, high
‹ Silicon Gate for Fast Switching Speeds
speed power switching applications such as switching
‹ Low RDS(on) to Minimize On-Losses. Specified at Elevated
Temperature
regulators, converters, solenoid and relay drivers.
‹ Rugged – SOA is Power Dissipation Limited
‹ Source-to-Drain Characterized for Use With Inductive
Loads
PIN CONFIGURATION
SYMBOL
D
TO-220
SOURCE
DRAIN
GATE
Front View
G
S
1
2
3
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
.....................IRF640...............................................TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
ID
18
A
IDM
72
VGS
±20
VGSM
±40
V
PD
125
W
1.00
W/к
TJ, TSTG
-55 to 150
к
EAS
224
mJ
șJC
1.00
к/W
șJA
62.5
TL
260
Derate above 25к
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
V
(VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
к
(1) Pulse Width and frequency is limited by TJ(max) and thermal response
Page 1
IRF640
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
CIRF640
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Symbol
Min
V(BR)DSS
200
Typ
Max
Units
V
mA
Drain-Source Leakage Current
(VDS = Rated VDSS, VGS = 0 V)
(VDS = 0.8Rated VDSS, VGS = 0 V, TJ = 125к)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
VGS(th)
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) *
RDS(on)
0.18
ȍ
Drain-Source On-Voltage (VGS = 10 V)
(ID = 5.0 A)
VDS(on)
6.0
V
0.025
1.0
2.0
Forward Transconductance (VDS = 50 V, ID = 10 A) *
gFS
Input Capacitance
Ciss
1600
Coss
750
pF
pF
Crss
300
pF
td(on)
30
tr
60
ns
ns
td(off)
80
ns
tf
60
ns
63
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
(VDD = 30 V, ID = 10 A,
VGS = 10 V,
RG = 4.7ȍ) *
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
6.8
mhos
Qg
36
Qgs
16
nC
nC
Qgd
26
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
Gate-Source Charge
Gate-Drain Charge
(VDS = 0.8Rated VDSS, ID = Rated ID,
VGS = 10 V)*
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = Rated ID,
dIS/dt = 100A/µs)
VSD
1.5
V
ton
**
ns
trr
450
ns
* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
Page 2
IRF640
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Page 3
IRF640
POWER MOSFET
Page 4
IRF640
POWER MOSFET
Page 5
IRF640
POWER MOSFET
!
PACKAGE DIMENSION
TO-220
A
D
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
E
F
φ
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
e
b1
e1
b
A1
c
L1
φ
Side View
Front View
Page 6
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