Microchip MCP1700 Low quiescent current ldo Datasheet

MCP1700
Low Quiescent Current LDO
Features:
General Description:
•
•
•
•
The MCP1700 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 1.6 µA of quiescent
current (typical). The input operating range is specified
from 2.3V to 6.0V, making it an ideal choice for two and
three primary cell battery-powered applications, as well
as single cell Li-Ion-powered applications.
•
•
•
•
•
•
•
1.6 µA Typical Quiescent Current
Input Operating Voltage Range: 2.3V to 6.0V
Output Voltage Range: 1.2V to 5.0V
250 mA Output Current for Output
Voltages  2.5V
200 mA Output Current for Output
Voltages < 2.5V
Low Dropout (LDO) Voltage
- 178 mV typical @ 250 mA for VOUT = 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 5.0V
Stable with 1.0 µF Ceramic Output Capacitor
Short Circuit Protection
Overtemperature Protection
Applications:
•
•
•
•
•
•
•
•
•
•
Battery-Powered Devices
Battery-Powered Alarm Circuits
Smoke Detectors
CO2 Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Related Literature:
• AN765, “Using Microchip’s Micropower LDOs”
(DS00765), Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs” (DS00766),
Microchip Technology Inc., 2002
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”
(DS00792), Microchip Technology Inc., 2001
The MCP1700 is capable of delivering 250 mA with
only 178 mV of input to output voltage differential
(VOUT = 2.8V). The output voltage tolerance of the
MCP1700 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C.
Output voltages available for the MCP1700 range from
1.2V to 5.0V. The LDO output is stable when using only
1 µF output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include SOT-23, SOT-89, TO-92 and
2x2 DFN-6.
Package Types
3-Pin SOT-23
3-Pin SOT-89
VIN
VIN
3
MCP1700
MCP1700
1
2
GND VOUT
1
2
GND VIN VOUT
3-Pin TO-92
2x2 DFN-6*
VIN 1
MCP1700
1 2 3
3
NC 2
GND 3
6 VOUT
EP
7
5 NC
4 NC
GND VIN VOUT
* Includes Exposed Thermal Pad (EP); see Table 3-1.
 2005-2013 Microchip Technology Inc.
DS20001826C-page 1
MCP1700
Functional Block Diagrams
MCP1700
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
Typical Application Circuits
MCP1700
GND
VOUT
1.8V
IOUT
150 mA
DS20001826C-page 2
VIN
VOUT
VIN
(2.3V to 3.2V)
CIN
1 µF Ceramic
COUT
1 µF Ceramic
 2005-2013 Microchip Technology Inc.
MCP1700
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
VDD ............................................................................................+6.5V
All inputs and outputs w.r.t. ......... (VSS - 0.3V) to (VIN + 0.3V)
Peak Output Current .................................... Internally Limited
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)  4 kV;  400V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input / Output Characteristics
Input Operating
Voltage
VIN
2.3
—
6.0
V
Input Quiescent
Current
Iq
—
1.6
4
µA
IL = 0 mA, VIN = VR + 1V
Maximum Output
Current
IOUT_mA
250
200
—
—
—
—
mA
For VR  2.5V
For VR  2.5V
Output Short
Circuit Current
IOUT_SC
—
408
—
mA
VIN = VR + 1V, VOUT = GND
Current (peak current) measured 10 ms
after short is applied.
Output Voltage
Regulation
VOUT
VR - 3.0%
VR - 2.0%
VR ± 0.4%
VR + 3.0%
VR + 2.0%
V
Note 2
TCVOUT
—
50
—
ppm/°C
Note 3
Line Regulation
VOUT/
(VOUTXVIN)
-1.0
±0.75
+1.0
%/V
Load Regulation
VOUT/VOUT
-1.5
±1.0
+1.5
%
Dropout Voltage
VR  2.5V
VIN - VOUT
—
178
350
mV
IL = 250 mA, (Note 1, Note 5)
Dropout Voltage
VR  2.5V
VIN - VOUT
—
150
350
mV
IL = 200 mA, (Note 1, Note 5)
Output Rise Time
TR
—
500
—
µs
10% VR to 90% VR VIN = 0V to 6V,
RL = 50 resistive
VOUT Temperature
Coefficient
Note 1:
2:
3:
4:
5:
6:
7:
Note 1
(VR + 1)V  VIN  6V
IL = 0.1 mA to 250 mA for VR  2.5V
IL = 0.1 mA to 200 mA for VR  2.5V
Note 4
The minimum VIN must meet two conditions: VIN  2.3V and VIN  VR + 3.0%  VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
 2005-2013 Microchip Technology Inc.
DS20001826C-page 3
MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Output Noise
Power Supply
Ripple Rejection
Ratio
Thermal
Shutdown
Protection
Note 1:
2:
3:
4:
5:
6:
7:
Sym.
Min.
Typ.
Max.
Units
µV/(Hz)
Conditions
1/2
eN
—
3
—
PSRR
—
44
—
dB
f = 100 Hz, COUT = 1 µF, IL = 50 mA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V
IL = 100 mA, f = 1 kHz, COUT = 1 µF
TSD
—
140
—
°C
VIN = VR + 1V, IL = 100 µA
The minimum VIN must meet two conditions: VIN  2.3V and VIN  VR + 3.0%  VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.
Parameters
Sym.
Min.
Specified Temperature Range
TA
Operating Temperature Range
TJ
Storage Temperature Range
Typ.
Max.
Units
-40
+125
°C
-40
+125
°C
TA
-65
+150
°C
JA
—
91
—
°C/W
JC
—
19
—
°C/W
JA
—
336
—
°C/W
JC
—
110
—
°C/W
Conditions
Temperature Ranges
Thermal Package Resistance
Thermal Resistance, 2x2 DFN
Thermal Resistance, SOT-23
Thermal Resistance, SOT-89
Thermal Resistance, TO-92
Note 1:
JA
—
180
—
°C/W
JC
—
52
—
°C/W
JA
—
160
—
°C/W
JC
—
66.3
—
°C/W
EIA/JEDEC® JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DS20001826C-page 4
 2005-2013 Microchip Technology Inc.
MCP1700
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
1.208
VR = 1.2V
IOUT = 0 µA
2.8
1.206
TJ = +125°C
2.6
2.4
TJ = - 40°C
2.2
2.0
1.8
TJ = +25°C
1.6
Ou
utput Voltage (V)
Quies
scent Current (µA)
3.0
1.202
1.200
TJ = +25°C
1.198
1.196
TJ = - 40°C
1.192
1.2
1.190
1.0
2.0
2.5
3.0
FIGURE 2-1:
Input Voltage.
3.5
4.0
4.5
Input Voltage (V)
5.0
5.5
2.0
6.0
Input Quiescent Current vs.
3.0
3.5 4.0 4.5
Input Voltage (V)
5.0
5.5
6.0
1.800
VR = 2.8V
45
2.5
FIGURE 2-4:
Output Voltage vs. Input
Voltage (VR = 1.2V).
50
VR = 1.8V
IOUT = 0.1 mA
TJ = +125°C
1.795
40
TJ = +25°C
35
30
TJ = - 40°C
25
20
15
10
Outp
put Voltage (V)
Grou
und Current (µA)
1.204
1.194
1.4
VR = 1.2V
IOUT = 0.1 mA
TJ = +125°C
1.790
TJ = - 40°C
TJ = +125°C
1.785
1 780
1.780
TJ = +25°C
1.775
5
1.770
0
0
25
50
FIGURE 2-2:
Current.
Ground Current vs. Load
3.0
3.5 4.0 4.5
Input Voltage (V)
5.0
5.5
6.0
FIGURE 2-5:
Output Voltage vs. Input
Voltage (VR = 1.8V).
VR = 5.0V
VR = 1.2V
VR = 2.8V
1.50
VR = 2.8V
IOUT = 0.1 mA
2.798
Ou
utput Voltage (V)
Quiesc
cent Current (µA)
VIN = VR + 1V
IOUT = 0 µA
2.00
1.75
2.5
2.800
2.50
2.25
2.0
75 100 125 150 175 200 225 250
Load Current (mA)
TJ = +25°C
2.796
2.794
2.792
2.790
TJ = - 40°C
2.788
2.786
2.784
TJ = +125°C
2.782
2.780
1.25
2.778
-40 -25 -10
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-3:
Quiescent Current vs.
Junction Temperature.
 2005-2013 Microchip Technology Inc.
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
Input Voltage (V)
FIGURE 2-6:
Output Voltage vs. Input
Voltage (VR = 2.8V).
DS20001826C-page 5
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
5.000
VR = 5.0V
IOUT = 0.1 mA
Ou
utput Voltage (V)
Output Voltage (V)
4.995
TJ = +25°C
4.990
TJ = - 40°C
4.985
4.980
4.975
4.970
4.965
TJ = +125°C
4.960
4.955
5.0
5.2
5.4
5.6
Input Voltage (V)
5.8
6.0
FIGURE 2-7:
Output Voltage vs. Input
Voltage (VR = 5.0V).
VR = 2.8V
VIN = VR + 1V
TJ = - 40°C
TJ = +125°C
0
50
100
150
Load Current (mA)
200
250
FIGURE 2-10:
Output Voltage vs. Load
Current (VR = 2.8V).
1.21
5.000
VR = 1.2V
VIN = VR + 1V
TJ = - 40°C
1.20
1.19
TJ = +25°C
1.18
1.17
TJ = +125
+125°C
C
TJ = +25°C
4.995
Output Voltage (V)
Output Voltage (V)
TJ = +25°C
2.798
2.796
2.794
2.792
2.790
2.788
2.786
2 784
2.784
2.782
2.780
2.778
1.16
4.990
4.985
TJ = - 40°C
4.980
VR = 5.0V
VIN = VR + 1V
4.975
4 970
4.970
4.965
TJ = +125°C
4.960
1.15
4.955
0
25
50
75
100
125
150
175
200
0
50
Load Current (mA)
FIGURE 2-8:
Output Voltage vs. Load
Current (VR = 1.2V).
200
250
FIGURE 2-11:
Output Voltage vs. Load
Current (VR = 5.0V).
0.25
1.792
VR = 2.8V
1.790
Drop
pout Votage (V)
Ou
utput Voltage (V)
100
150
Load Current (mA)
TJ = +25°C
1.788
TJ = - 40°C
1.786
TJ = +125°C
1.784
1.782
VR = 1.8V
VIN = VR + 1V
1.780
0.20
TJ = +125°C
TJ = +25°C
0.15
0.10
TJ = - 40°C
0.05
0.00
1.778
0
25
50
75 100 125 150
Load Current (mA)
175
200
FIGURE 2-9:
Output Voltage vs. Load
Current (VR = 1.8V).
DS20001826C-page 6
0
25
50
75 100 125 150 175 200 225 250
Load Current (mA)
FIGURE 2-12:
Dropout Voltage vs. Load
Current (VR = 2.8V).
 2005-2013 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
0.16
0.12
TJ = +125°C
0.10
Noise (µV/√Hz)
N
Dropo
out Voltage (V)
10.00
VR = 5.0V
0.14
TJ = +25°C
0.08
0.06
TJ = - 40°C
0.04
1.00
VIN = 3.8V
VR = 2.8V
IOUT = 50 mA
VIN = 2.5V
VIN = 2.8V
VR = 1.2V
VR = 1.8V
IOUT = 50 mA IOUT = 50 mA
0 10
0.10
0.02
0.00
0
25
50
75 100 125 150 175 200 225 250
Load Current (mA)
FIGURE 2-13:
Dropout Voltage vs. Load
Current (VR = 5.0V).
0.01
0.01
FIGURE 2-16:
1
10
Frequency (kHz)
100
1000
Noise vs. Frequency.
VIN = 2.2V
+20
+10
CIN = 1µF Ceramic
COUT = 1µF Ceramic
0
PSRR (dB/decade)
0.1
-10
-20
VR = 1.2V
-30
-40
-50
I = 100 mA
Load
Step
-60
-70
0.01
0.10
1.00
10.0
Frequency (KHz)
100
1000
FIGURE 2-14:
Power Supply Ripple
Rejection vs. Frequency (VR = 1.2V).
FIGURE 2-17:
(VR = 1.2V).
+20
Dynamic Load Step
VIN = 2.8V
+10
CIN = 1µF Ceramic
COUT = 1µF Ceramic
PSRR (dB/Decade)
0
-10
VR = 1.8V
-20
-30
-40
I = 100 mA
Load
Step
-50
-60
0.01
0.01
10.00
1
Frequency (KHz)
100
FIGURE 2-15:
Power Supply Ripple
Rejection vs. Frequency (VR = 2.8V).
 2005-2013 Microchip Technology Inc.
1000
FIGURE 2-18:
(VR = 1.8V).
Dynamic Load Step
DS20001826C-page 7
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
VIN = 6V
CIN = 1 µF Ceramic
COUT = 22 µF (1 ESR)
VIN = 3.8V
CIN = 1µF Ceramic
COUT = 1µF Ceramic
VR = 5V
VR = 2.8V
I = 100 mA
Load
Step
IOUT= 200 mA
Load Step
FIGURE 2-19:
(VR = 2.8V).
Dynamic Load Step
VIN = 2.8V
VR = 1.8V
CIN = 1 µF Ceramic
COUT = 22 µF (1 ESR)
FIGURE 2-22:
(VR = 5.0V).
VIN = 3.8V to
4.8V
Dynamic Load Step
COUT = 1 µF Ceramic
VR = 2.8V
IOUT= 200 mA
Load Step
IOUT
100 mA
FIGURE 2-20:
(VR = 1.8V).
Dynamic Load Step
VIN = 3.8V
CIN = 1 µF Ceramic
FIGURE 2-23:
(VR = 2.8V).
VIN = 0V to
2.2V
COUT = 22 µF (1 ESR)
Dynamic Line Step
COUT = 1 µF Ceramic
RLOAD = 25
VR = 2.8V
VR = 1.2V
IOUT= 200 mA
Load Step
FIGURE 2-21:
(VR = 2.8V).
DS20001826C-page 8
Dynamic Load Step
FIGURE 2-24:
(VR = 1.2V).
Start-up from VIN
 2005-2013 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
COUT = 1 µF Ceramic
RLOAD = 25
VR = 1.8V
0.0
Loa
ad Regulation (%)
VIN = 0V to
2.8V
VIN = 5.0V
-0.1
VR = 2.8V
IOUT = 0 to 250 mA
VIN = 4.3V
-0.2
-0.3
-0.4
VIN = 3.3V
-0.5
-0.6
-0.7
-40 -25 -10
FIGURE 2-25:
(VR = 1.8V).
Start-up from VIN
VIN = 0V to
3.8V
FIGURE 2-28:
Load Regulation vs.
Junction Temperature (VR = 2.8V).
COUT = 1 µF Ceramic
RLOAD = 25
0.10
Load
d Regulation (%)
VR = 2.8V
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
VR = 5.0V
IOUT = 0 to 250 mA
0.05
VIN = 6.0V
0.00
-0.05
VIN = 5
5.5V
5
-0.10
0 10
-0.15
-0.20
-40
-25
-10
5
20
35
50
65
80
95
110 125
Junction Temperature (°C)
FIGURE 2-26:
(VR = 2.8V).
Start-up from VIN
FIGURE 2-29:
Load Regulation vs.
Junction Temperature (VR = 5.0V).
0.2
VR = 1.8V
IOUT = 0 to 200 mA
VIN = 5.0V
0.1
VIN = 3.5V
0.0
-0.1
02
-0.2
VIN = 2.2V
-0.3
0.10
Line Regulation (%/V)
Loa
ad Regulation (%)
0.3
0.05
0.00
VR = 2.8V
-0.05
-0.10
VR = 1.8V
-0.15
-0.20
VR = 1.2V
-0.25
-0.4
-40 -25 -10
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-27:
Load Regulation vs.
Junction Temperature (VR = 1.8V).
 2005-2013 Microchip Technology Inc.
-0.30
-40 -25 -10
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-30:
Line Regulation vs.
Temperature (VR = 1.2V, 1.8V, 2.8V).
DS20001826C-page 9
MCP1700
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
SOT-23
Pin No.
SOT-89
1
1
1
3
GND
Ground Terminal
2
3
3
6
VOUT
Regulated Voltage Output
3.1
Pin No.
TO-92
Pin No.
2x2 DFN-6
Function
3
2
2
1
VIN
Unregulated Supply Voltage
—
—
—
2, 4, 5
NC
No Connect
—
—
—
7
EP
Exposed Thermal Pad
Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (1.6 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2
Name
Regulated Output Voltage (VOUT)
3.4
No Connect (NC)
No internal connection. The pins marked NC are true
“No Connect” pins.
3.5
Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the GND pin; they
must be connected to the same potential on the Printed
Circuit Board (PCB).
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
3.3
Unregulated Input Voltage Pin
(VIN)
Connect VIN to the input unregulated source voltage.
As with all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at high
frequency.
DS20001826C-page 10
 2005-2013 Microchip Technology Inc.
MCP1700
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
4.3
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
4.2
Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 140°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
Overcurrent
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
MCP1700
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
FIGURE 4-1:
Block Diagram.
 2005-2013 Microchip Technology Inc.
DS20001826C-page 11
MCP1700
5.0
FUNCTIONAL DESCRIPTION
The MCP1700 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load of the
MCP1700 ranges from 0 mA to 250 mA (VR  2.5V).
The input operating voltage ranges from 2.3V to 6.0V,
making it capable of operating from two, three or four
alkaline cells or a single Li-Ion cell battery input.
5.1
Input
The input of the MCP1700 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
required capacitor depend heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.2
Output
The maximum rated continuous output current for the
MCP1700 is 250 mA (VR  2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
ESR range on the output capacitor can range from 0
to 2.0.
5.3
Output Rise time
When powering up the internal reference output, the
typical output rise time of 500 µs is controlled to
prevent overshoot of the output voltage.
DS20001826C-page 12
 2005-2013 Microchip Technology Inc.
MCP1700
6.0
APPLICATION CIRCUITS AND
ISSUES
6.1
Typical Application
The MCP1700 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
GND
VIN
COUT
1 µF Ceramic
FIGURE 6-1:
6.1.1
VIN
(2.3V to 3.2V)
VOUT
IOUT
150 mA
CIN
1 µF Ceramic
Typical Application Circuit.
APPLICATION INPUT CONDITIONS
Package Type = SOT-23
Input Voltage Range = 2.3V to 3.2V
VIN maximum = 3.2V
VOUT typical = 1.8V
IOUT = 150 mA maximum
6.2
Power Calculations
6.2.1
EQUATION 6-2:
T J  MAX  = PTOTAL  R JA + T A  MAX 
MCP1700
VOUT
1.8V
The maximum continuous operating junction
temperature specified for the MCP1700 is +125°C. To
estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RJA). The thermal resistance from junction to
ambient for the SOT-23 pin package is estimated at
230°C/W.
POWER DISSIPATION
The internal power dissipation of the MCP1700 is a
function of input voltage, output voltage and output
current. The power dissipation resulting from the
quiescent current draw is so low it is insignificant
(1.6 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
P LDO =  VIN  MAX  – V OUT  MIN    I OUT  MAX 
PLDO = Internal power dissipation of the
LDO Pass device
VIN(MAX) = Maximum input voltage
VOUT(MIN) = Minimum output voltage of the
LDO
TJ(MAX) =
Maximum continuous junction
temperature
PTOTAL =
Total power dissipation of the device
RJA =
TA(MAX) =
Thermal resistance from junction to
ambient
Maximum ambient temperature
The maximum power dissipation capability for a
package can be calculated given the junction-toambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the maximum internal power
dissipation of the package.
EQUATION 6-3:
 T J  MAX  – T A  MAX  
P D  MAX  = --------------------------------------------------R JA
PD(MAX) =
Maximum power dissipation of the
device
TJ(MAX) =
Maximum continuous junction
temperature
TA(MAX) =
Maximum ambient temperature
RJA =
Thermal resistance from junction to
ambient
EQUATION 6-4:
T J  RISE  = P D  MAX   R JA
TJ(RISE) = Rise in the device’s junction
temperature over the ambient
temperature
PTOTAL = Maximum power dissipation of the
device
RJA = Thermal resistance from junction to
ambient
 2005-2013 Microchip Technology Inc.
DS20001826C-page 13
MCP1700
EQUATION 6-5:
T J = T J  RISE  + T A
TJ = Junction Temperature
TJ(RISE) = Rise in the device’s junction
temperature over the ambient
temperature
TA = Ambient temperature
6.3
Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation resulting from ground current is small
enough to be neglected.
6.3.1
POWER DISSIPATION EXAMPLE
Package
TJ(RISE) = PTOTAL x RJA
TJ(RISE) = 218.1 milli-Watts x 230.0°C/Watt
TJ(RISE) = 50.2°C
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
TJ = TJ(RISE) + TA(MAX)
TJ = 90.2°C
Maximum Package Power Dissipation at +40°C
Ambient Temperature
2x2 DFN-6 (91°C/Watt = RJA)
PD(MAX) = (125°C - 40°C) / 91°C/W
PD(MAX) = 934 milli-Watts
SOT-23 (230.0°C/Watt = RJA)
Package Type = SOT-23
PD(MAX) = (125°C - 40°C) / 230°C/W
Input Voltage
PD(MAX) = 369.6 milli-Watts
VIN = 2.3V to 3.2V
LDO Output Voltages and Currents
VOUT = 1.8V
IOUT = 150 mA
Maximum Ambient Temperature
TA(MAX) = +40°C
SOT-89 (52°C/Watt = RJA)
PD(MAX) = (125°C - 40°C) / 52°C/W
PD(MAX) = 1.635 Watts
TO-92 (131.9°C/Watt = RJA)
PD(MAX) = (125°C - 40°C) / 131.9°C/W
PD(MAX) = 644 milli-Watts
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA
PLDO = 218.1 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (RJA) is derived
from an EIA/JEDEC® standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.
DS20001826C-page 14
 2005-2013 Microchip Technology Inc.
MCP1700
6.4
Voltage Reference
The MCP1700 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1700 LDO. The low cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1700 as a voltage
reference.
Ratio Metric Reference
PIC®
Microcontroller
1 µA Bias
MCP1700
CIN
1 µF
VIN
VOUT
GND
COUT
1 µF
VREF
AD0
AD1
Bridge Sensor
FIGURE 6-2:
voltage reference.
6.5
Using the MCP1700 as a
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1700. The internal
current limit of the MCP1700 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1700. The typical current limit for the
MCP1700 is 550 mA (TA + 25°C).
 2005-2013 Microchip Technology Inc.
DS20001826C-page 15
MCP1700
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
3-Pin SOT-23
Standard
Extended Temp
CKNN
3-Pin SOT-89
CUYYWW
Symbol
Voltage *
CK
CM
CP
CQ
CR
CS
CU
1.2
1.8
2.5
2.8
3.0
3.3
5.0
* Custom output voltages available upon request.
NNN
Contact your local Microchip sales office for more
information.
Example
3-Pin TO-92
1700
1202E
e3
TO^^
322256
XXXXXX
XXXXXX
XXXXXX
YWWNNN
6-Lead DFN (2x2x0.9 mm)
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20001826C-page 16
Example
Part Number
Code
MCP1700T-1202E/MAY
ABB
MCP1700T-1802E/MAY
ABC
MCP1700T-2502E/MAY
ABD
MCP1700T-2802E/MAY
ABF
MCP1700T-3002E/MAY
ABE
MCP1700T-3302E/MAY
AAZ
MCP1700T-5002E/MAY
ABA
ABB
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2005-2013 Microchip Technology Inc.
MCP1700
/HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU 77 >627@
1RWH
.# #$ # /
## +33--- 3
! -
/ 1 # 2 /
% # # ! #
b
N
E
E1
2
1
e
e1
D
c
A
φ
A2
A1
L
4#
5#
6$9 %2
5
55""
6
6
8
:
!2#
7$# ! 5
67
')*
!2#
7, ; #
! !2 /
/
# !%%
7, =!#
! !2 /
=!#
)*
<
'
<
"
<
>
"
>
:
7, 5 #
>
:'
.#5 #
5
:
'
>
.# ?
<
?
5
<
!/
5 !=!#
9
:
<
'
1RWHV
!"!#$! !% #$ !% #$ # & !'
!# "('
)*+ ) # & #, $ --#$## ! - * )
 2005-2013 Microchip Technology Inc.
DS20001826C-page 17
MCP1700
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001826C-page 18
 2005-2013 Microchip Technology Inc.
MCP1700
/HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU+HDGHU 0% >627@
1RWH
.# #$ # /
## +33--- 3
! -
/ 1 # 2 /
% # # ! #
D
D1
E
H
L
1
N
2
b
b1
b1
e
E1
e1
A
C
4#
5#
6$9 %5
55""
6
6
:
!2#
:)*
2#
7$# ! 5
8
!
')*
7, ; #
>
7, =!#
;
:
'
! !2 /
=!# #)
"
>
! !2 /
=!# #
"
:
7, 5 #
:
>
95 #
:
.#5 #
5
5
!/
:'
5
!=!#
9
'>
5 ! @:=!#
9
:>
1RWHV
!"!#$! !% #$ !% #$ # &
!# "('
)*+ ) # & #, $ --#$## !
! - * )
 2005-2013 Microchip Technology Inc.
DS20001826C-page 19
MCP1700
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001826C-page 20
 2005-2013 Microchip Technology Inc.
MCP1700
/HDG3ODVWLF7UDQVLVWRU2XWOLQH 72 >72@
1RWH
.# #$ # /
## +33--- 3
! -
/ 1 # 2 /
% # # ! #
E
A
N
1
L
1
2
3
b
e
c
D
R
4#
5#
6$9 %2
6*;"
6
6
2#
')*
)###2 /
. #
7, =!#
7, 5 #
! !2 /
#
5
8
:
!$
# 2 !/
'
>'
"
'
'
'
5
'
<
5 !=!#
9
1RWHV
!"!#$! !% #$ !% #$ # &
!# "('
)*+ ) # & #, $ --#$## !'A
! - * )
 2005-2013 Microchip Technology Inc.
DS20001826C-page 21
MCP1700
DS20001826C-page 22
 2005-2013 Microchip Technology Inc.
MCP1700
 2005-2013 Microchip Technology Inc.
DS20001826C-page 23
MCP1700
NOTES:
DS20001826C-page 24
 2005-2013 Microchip Technology Inc.
MCP1700
APPENDIX A:
REVISION HISTORY
Revision C (October 2013)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
7.
Added new package to the family (2x2 DFN-6)
and related information throughout the
document.
Updated
thermal
package
resistance
information in Temperature Specifications.
Updated Section 3.0, Pin Descriptions.
Added package markings and drawings for the
2x2 DFN-6 package.
Added information related to the 2.8V option
throughout the document.
Updated Product Identification System.
Minor typographical changes.
Revision B (February 2007)
• Updated Packaging Information.
• Corrected Product Identification System.
• Changed X5R to X7R in Notes to DC
Characteristics, Temperature Specifications, and
Section 2.0, Typical Performance Curves.
Revision A (November 2005)
• Original Release of this Document.
 2005-2013 Microchip Technology Inc.
DS20001826C-page 25
MCP1700
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X-
XXX
X
X
/XX
MCP1700
Tape &
Reel
Voltage
Output
Tolerance
Temp.
Range
Package
Device:
MCP1700: Low Quiescent Current LDO
Tape and Reel:
T:
Tape and Reel only applies to SOT-23 and SOT-89
devices
Standard Output
Voltage: *
120
180
250
280
300
330
500
=
=
=
=
=
=
=
1.2V
1.8V
2.5V
2.8V
3.0V
3.3V
5.0V
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information
Tolerance:
2
= 2%
Temperature Range:
E
= -40°C to +125°C (Extended)
Package:
MAY =
MB =
TO =
TT =
Examples:
2x2 DFN-6 Package:
a)
b)
c)
d)
e)
f)
g)
MCP1700T-1202E/MAY:1.2V VOUT
MCP1700T-1802E/MAY:1.8V VOUT
MCP1700T-2502E/MAY:2.5V VOUT
MCP1700T-2802E/MAY:2.8V VOUT
MCP1700T-3002E/MAY:3.0V VOUT
MCP1700T-3302E/MAY:3.3V VOUT
MCP1700T-5002E/MAY:5.0V VOUT
SOT-89 Package:
a)
b)
c)
d)
e)
f)
g)
MCP1700T-1202E/MB:1.2V VOUT
MCP1700T-1802E/MB:1.8V VOUT
MCP1700T-2502E/MB:2.5V VOUT
MCP1700T-2802E/MB:2.8V VOUT
MCP1700T-3002E/MB:3.0V VOUT
MCP1700T-3302E/MB:3.3V VOUT
MCP1700T-5002E/MB:5.0V VOUT
TO-92 Package:
Plastic Small Outline Transistor (DFN), 6-lead
Plastic Small Outline Transistor (SOT-89), 3-lead
Plastic Small Outline Transistor (TO-92), 3-lead
Plastic Small Outline Transistor (SOT-23), 3-lead
a)
b)
c)
d)
e)
f)
g)
MCP1700-1202E/TO:1.2V VOUT
MCP1700-1802E/TO:1.8V VOUT
MCP1700-2502E/TO:2.5V VOUT
MCP1700-2802E/TO:2.8V VOUT
MCP1700-3002E/TO:3.0V VOUT
MCP1700-3302E/TO:3.3V VOUT
MCP1700-5002E/TO:5.0V VOUT
SOT-23 Package:
a)
b)
c)
d)
e)
f)
g)
DS20001826C-page 26
MCP1700T-1202E/TT:1.2V VOUT
MCP1700T-1802E/TT:1.8V VOUT
MCP1700T-2502E/TT:2.5V VOUT
MCP1700T-2802E/TT:2.8V VOUT
MCP1700T-3002E/TT:3.0V VOUT
MCP1700T-3302E/TT:3.3V VOUT
MCP1700T-5002E/TT:5.0V VOUT
 2005-2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2005-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-526-4
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2005-2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS20001826C-page 27
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS20001826C-page 28
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
08/20/13
 2005-2013 Microchip Technology Inc.