Powerex Power FS10AS-2 Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS10AS-2
HIGH-SPEED SWITCHING USE
FS10AS-2
OUTLINE DRAWING
1.0
2.3
2.3
10MAX.
2.3MIN.
1.0MAX.
5.5 ± 0.2
r
A
0.5 ± 0.2
0.8
2.3
0.9MAX.
0.5 ± 0.1
1.5 ± 0.2
6.5
5.0 ± 0.2
Dimensions in mm
q
w
e
wr
¡10V DRIVE
¡VDSS ................................................................................ 100V
¡rDS (ON) (MAX) .............................................................. 0.23Ω
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.) ........... 100ns
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
100
V
VGSS
ID
Gate-source voltage
Drain current
VDS = 0V
±20
10
V
A
IDM
IDA
Drain current (Pulsed)
Avalanche drain current (Pulsed)
40
10
A
A
IS
ISM
Source current
Source current (Pulsed)
10
40
A
A
PD
T ch
Maximum power dissipation
Channel temperature
30
–55 ~ +150
W
°C
–55 ~ +150
°C
g
T stg
—
Parameter
Conditions
L = 100µH
Storage temperature
Weight
Typical value
0.26
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
VDS (ON)
y fs
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
td (off)
Rise time
Turn-off delay time
tf
Fall time
VSD
Rth (ch-c)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Limits
Test conditions
Unit
Min.
Typ.
Max.
100
—
—
—
—
±0.1
V
µA
—
2.0
—
3.0
0.1
4.0
mA
V
—
0.16
0.23
Ω
ID = 5A, VDS = 5V
—
—
0.80
9.0
1.15
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
600
125
—
—
pF
pF
—
—
40
18
—
—
pF
ns
—
—
20
30
—
—
ns
ns
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 100V, V GS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
VDD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
—
18
—
ns
—
—
1.0
—
1.5
4.17
—
100
—
V
°C/W
ns
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
40
30
20
10
0
0
DRAIN CURRENT ID (A)
50
100
150
200
100ms
100
7
5
3
2
1ms
10ms
DC
10–1
7
5 TC = 25°C
3 Single Pulse
2
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
TC = 25°C
Pulse Test
12
6V
8
4
5V
1.0
2.0
3.0
4.0
5.0
DRAIN-SOURCE VOLTAGE VDS (V)
VGS = 20V 10V 7V
10
7V
16
0
tw = 10ms
101
7
5
3
2
CASE TEMPERATURE TC (°C)
PD = 30W
20
0
MAXIMUM SAFE OPERATING AREA
5
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
TC = 25°C
Pulse Test
6V
8
6
4
5V
2
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
4.0
3.0
ID = 15A
2.0
10A
1.0
5A
0
0
4
8
12
VGS = 10V
0.2
20V
0.1
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TC = 25°C
VDS = 10V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
0.3
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
12
8
4
102
VDS = 5V
7
Pulse Test
5
4
3
2
101
7
5
4
3
TC = 25°C
75°C
125°C
2
0
4
8
12
16
100 0
10
20
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
103
7
5
3
2
Ciss
102
7
5
3 Tch = 25°C
2 f = 1MHZ
101
0.4
DRAIN CURRENT ID (A)
16
0
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
CAPACITANCE
Ciss, Coss, Crss (pF)
16
0.5
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
TC = 25°C
Pulse Test
Coss
Crss
VGS = 0V
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
5.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
102
7
5
4
3
2
101
7
5
4
3
td(off)
td(on)
tf
tr
Tch = 25°C
VDD = 50V
VGS = 10V
RGEN = RGS = 50Ω
2
100 0
10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-2
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
VDS = 80V
50V
20V
12
8
4
0
4
8
12
16
24
16
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
2
100
7
5
4
3
2
–50
0
50
100
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
TC = 125°C
75°C
25°C
8
0
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
32
20
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
40
Tch = 25°C
ID = 10A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7
5 D = 1.0
3 0.5
2
PDM
0.2
100
7
5
3
2
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–1 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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