BCR3PM-14LG Triac Medium Power Use REJ03G1557-0100 Rev.1.00 Jul 06, 2007 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized: Yellow Card No. E223904 File No. E80271 IT (RMS) : 3 A VDRM : 800 V (Tj = 125°C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 VDRM Non-repetitive peak off-state voltageNote1 VDSM REJ03G1557-0100 Page 1 of 7 Rev.1.00 Jul 06, 2007 Voltage class 14 800 700 840 Unit Conditions V V V Tj = 125°C Tj = 150°C BCR3PM-14LG Parameter RMS on-state current Symbol IT (RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 W W V A °C °C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 130°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.6 Unit mA V Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 5.2 V °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1557-0100 Page 2 of 7 Rev.1.00 Jul 06, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3PM-14LG Performance Curves 102 7 5 3 2 Tj = 150°C 100 7 5 3 2 Tj = 25°C –1 30 25 20 15 10 5 2 3 5 7 10 1 2 3 5 7 10 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 10 7 5 3 VGM=10V PG(AV) = 0.5W 2 PGM = 5W 1 10 7 5 VGT 3 2 0 10 7 5 3 2 IRGT I VGD = 0.1V –1 10 7 5 3 2 –2 10 IFGT I, IRGT III IGM = 2A 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 2 3 5 7104 103 7 5 3 2 2 Typical Example IRGT III 2 10 7 5 IFGT I, IRGT I 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 102 7 5 3 2 1 10 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G1557-0100 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 35 0 0 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Surge On-State Current (A) 40 101 7 5 3 2 10 Rated Surge On-State Current Rev.1.00 Jul 06, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 3 5 7 104 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR3PM-14LG Allowable Case Temperature vs. RMS On-State Current 5.0 160 4.5 140 4.0 Case Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 360° Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 80 60 40 360° Conduction inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 120 × 120 × t2.3 140 120 100 100 × 100 × t2.3 60 × 60 × t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 Ambient Temperature (°C) 160 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 6 10 7 5 3 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 Typical Example –60 –40–20 0 20 40 60 80 100 120 140 160 REJ03G1557-0100 Page 4 of 7 Junction Temperature (°C) Rev.1.00 Jul 06, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Ambient Temperature (°C) of conduction angle 100 20 Resistive, 0.5 0 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 120 Curves apply regardless 3.0 3 10 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR3PM-14LG Breakover Voltage vs. Junction Temperature Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 100 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 160 140 Typical Example Tj = 150°C 120 100 80 60 III Quadrant 40 I Quadrant 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 2 10 7 5 3 2 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz 101 7 5 3 2 Minimum Characteristics Value I Quadrant III Quadrant 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7 103 Rate of Decay of On-State Commutating Current (A/ms) REJ03G1557-0100 Page 5 of 7 Rev.1.00 Jul 06, 2007 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 160 Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Latching Current (mA) 3 10 7 5 3 2 Breakover Voltage (t°C) × 100 (%) Breakover Voltage (25°C) Latching Current vs. Junction Temperature 10 7 5 3 2 1 10 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz III Quadrant I Quadrant Minimum Characteristics Value 0 10 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7 103 Rate of Decay of On-State Commutating Current (A/ms) BCR3PM-14LG Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 3 10 7 5 Typical Example IRGT III IRGT I 3 2 IFGT I 102 7 5 3 2 1 10 0 10 2 3 5 7 10 1 2 3 5 7 10 2 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I V A V 330Ω Test Procedure III REJ03G1557-0100 Page 6 of 7 Rev.1.00 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω Jul 06, 2007 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR3PM-14LG Package Dimensions Package Name TO-220F JEITA Package Code SC-67 Previous Code RENESAS Code PRSS0003AA-A MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G1557-0100 Page 7 of 7 Rev.1.00 Jul 06, 2007 Standard order code example BCR3PM-14LG BCR3PM-14LG-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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