DSK HER606 High efficiency rectifier Datasheet

Diode Semiconductor Korea
HER601--- HER608
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Low leakage
Low forward voltage drop
DO-27
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
601
HER HER HER HER HER HER HER
UNITS
602 603 604 605 606 607 608
Maximum recurrent peak reverse voltage
VRRM
50
100
200
300
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
6.0
A
IFSM
200.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 6.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA =100
VF
1.0
1.3
1.7
10.0
IR
V
A
200.0
Maximum reverse recovery time
(Note1)
trr
60
75
ns
Typical junction capacitance
(Note2)
CJ
100
65
pF
Typical thermal resistance
(Note3)
RθJA
12
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
/W
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Diode Semiconductor Korea
HER601 --- HER608
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t rr
50
N 1.
10
N 1.
+0.5A
D.U.T.
0
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
T J =25
Pulse W idth=300 µ S
10
50\100\200V
600\800\1000V
0.1
0
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6 1.8 2
5.0
4.0
3.0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
2.0
1.0
0
0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
HER601-HER605
100
75
TJ=25
50
25
HER606-HER608
0
0.1
0.5 1
2
4
10
20 4 0 100 200
REVERSE VOLTAGE,VOLTS
1000
75
100
125
150
175
350
300
TJ=25℃
8.3ms Single Half
Sine-Wave
250
200
AMPERES
125
50
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
150
25
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
175
z
6.0
AMPERES
300\400V
1
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
100
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
150
100
50
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
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