Diode Semiconductor Korea HER601--- HER608 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 6.0 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Low leakage Low forward voltage drop DO-27 High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 601 HER HER HER HER HER HER HER UNITS 602 603 604 605 606 607 608 Maximum recurrent peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 6.0 A IFSM 200.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 6.0A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 VF 1.0 1.3 1.7 10.0 IR V A 200.0 Maximum reverse recovery time (Note1) trr 60 75 ns Typical junction capacitance (Note2) CJ 100 65 pF Typical thermal resistance (Note3) RθJA 12 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. /W www.diode.kr Diode Semiconductor Korea HER601 --- HER608 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC t rr 50 N 1. 10 N 1. +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 50VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm T J =25 Pulse W idth=300 µ S 10 50\100\200V 600\800\1000V 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 5.0 4.0 3.0 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5mm)Lead Length 2.0 1.0 0 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS HER601-HER605 100 75 TJ=25 50 25 HER606-HER608 0 0.1 0.5 1 2 4 10 20 4 0 100 200 REVERSE VOLTAGE,VOLTS 1000 75 100 125 150 175 350 300 TJ=25℃ 8.3ms Single Half Sine-Wave 250 200 AMPERES 125 50 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 150 25 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 175 z 6.0 AMPERES 300\400V 1 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT 100 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 150 100 50 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz www.diode.kr