BCD AP2213 500ma low noise ldo regulator Datasheet

Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
General Description
Features
The AP2213 is a 500mA output current fixed voltage
regulator which provides low noise, very low dropout
voltage (typically 350mV at 500mA), very low
standby current (1µA maximum) and excellent power
supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets and PDAs
and in noise sensitive applications, such as RF electronics.
·
·
·
Up to 500mA Output Current
Low Standby Current
Low Dropout Voltage: VDROP=350mV at 500mA
·
·
High Output Accuracy: ±1%
Good Ripple Rejection Ability: 75dB at 100Hz
and IOUT=100µA
·
·
·
·
·
·
Tight Load and Line Regulation
Low Temperature Coefficient
Over Current Protection
Thermal Protection
Reversed-battery Protection
Logic-controlled Enable
The AP2213 features individual logic compatible
enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as
reversed-battery protection.
Applications
The AP2213 has 2.5V, 3.0V and 3.3V versions.
·
·
·
·
The AP2213 is available in TO-252-2 (1), SOIC-8 and
SOT-223 packages.
TO-252-2 (1)
Laptop, Notebook, and Palmtop Computer
CD-ROM, CD-R/RW, DVD Driver
Portable Electronic
PC Peripheral
SOIC-8
SOT-223
Figure 1. Package Types of AP2213
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
1
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Pin Configuration
D Package
M Package
(SOIC-8)
(TO-252-2 (1))
3
VOUT
2
GND
1
VIN
EN
1
8
GND
VIN
2
7
GND
VOUT
3
6
GND
BYP
4
5
GND
H Package
(SOT-223)
3
VIN
2
VOUT
1
GND
Figure 2. Pin Configuration of AP2213 (Top View)
Pin Descrition
Pin Number
Pin Name
Function
TO-252-2 (1)
SOIC-8
SOT-223
3
3
2
VOUT
2
5, 6, 7, 8
1
GND
Ground
1
2
3
VIN
Input Voltage
1
EN
Enable input: CMOS or TTL compatible input. Logic
high=enable, logic low=shutdown
4
BYP
Nov. 2009 Rev. 1. 5
Regulated output voltage
Bypass capacitor for low noise operation
BCD Semiconductor Manufacturing Limited
2
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Functional Block Diagram
VIN
3 (3) (2)
1 (2) (3)
VOUT
(4)
BYP
+
(1)
Bandgap
Ref.
-
EN
Current Limit
Thermal Shutdown
2 (5, 6, 7, 8) (1)
A (B) (C)
A for TO-252-2 (1)
B for SOIC-8
C for SOT-223
GND
Figure 3. Functional Block Diagram of AP2213
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
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Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Ordering Information
AP2213
E1: Lead Free
G1: Green
Circuit Type
TR: Tape and Reel
Blank: Tube
Package
D: TO-252-2 (1)
M: SOIC-8
H: SOT-223
Package
TO-252-2 (1)
SOIC-8
SOT-223
Temperature
Range
-40 to 125oC
-40 to 125oC
o
-40 to 125 C
2.5: Fixed Output 2.5V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
Part Number
Lead Free
Marking ID
Green
Lead Free
Green
Packing Type
AP2213D-2.5E1
AP2213D-2.5G1
AP2213D-2.5E1
AP2213D-2.5G1
Tube
AP2213D-2.5TRE1
AP2213D-2.5TRG1
AP2213D-2.5E1
AP2213D-2.5G1
Tape & Reel
AP2213D-3.0E1
AP2213D-3.0G1
AP2213D-3.0E1
AP2213D-3.0G1
Tube
AP2213D-3.0TRE1
AP2213D-3.0TRG1
AP2213D-3.0E1
AP2213D-3.0G1
Tape & Reel
AP2213D-3.3E1
AP2213D-3.3G1
AP2213D-3.3E1
AP2213D-3.3G1
Tube
AP2213D-3.3TRE1
AP2213D-3.3TRG1
AP2213D-3.3E1
AP2213D-3.3G1
Tape & Reel
AP2213M-2.5E1
AP2213M-2.5G1
2213M-2.5E1
2213M-2.5G1
Tube
AP2213M-2.5TRE1
AP2213M-2.5TRG1
2213M-2.5E1
2213M-2.5G1
Tape & Reel
AP2213M-3.0E1
AP2213M-3.0G1
2213M-3.0E1
2213M-3.0G1
Tube
AP2213M-3.0TRE1
AP2213M-3.0TRG1
2213M-3.0E1
2213M-3.0G1
Tape & Reel
AP2213M-3.3E1
AP2213M-3.3G1
2213M-3.3E1
2213M-3.3G1
Tube
AP2213M-3.3TRE1
AP2213M-3.3TRG1
2213M-3.3E1
2213M-3.3G1
Tape & Reel
AP2213H-2.5TRE1
AP2213H-2.5TRG1
EH13C
GH13C
Tape & Reel
AP2213H-3.0TRE1
AP2213H-3.0TRG1
EH13E
GH13E
Tape & Reel
AP2213H-3.3TRE1
AP2213H-3.3TRG1
EH13F
GH13F
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
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Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Supply Input Voltage
VIN
20
V
Enable Input Voltage
VEN
20
V
PD
Internally Limited (Thermal Protection)
W
TLEAD
260
o
Junction Temperature
TJ
150
oC
Storage Temperature
TSTG
-65 to 150
oC
ESD (Machine Model)
ESD
300
V
Thermal Resistance (No Heatsink)
θJA
Power Dissipation
Lead Temperature (Soldering, 10sec)
C
TO-252-2 (1)
90
SOIC-8
160
SOT-223
108
o
C/W
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Supply Input Voltage
VIN
2.5
18
V
Enable Input Voltage
VEN
0
18
V
TJ
-40
125
oC
Operating Junction Temperature
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
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Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Electrical Characteristics
AP2213-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Variation from specified
VOUT
Min
Typ
Max
-1
1
-2
2
Unit
Output Voltage Accuracy
∆VOUT/VOUT
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
120
µV/oC
(∆VOUT/VOUT)/∆T
48
ppm/oC
1.5
Line Regulation
VRLINE
VIN=3.5V to 13.2V
Load Regulation
(Note 4)
VRLOAD
IOUT=0.1mA to 500mA
110
140
165
250
275
250
400
500
350
IOUT=500mA
600
700
VEN≤0.4V (shutdown)
0.01
VEN≤0.18V (shutdown)
1
5
VEN≥2.0V, IOUT=100µA
100
150
VEN≥2.0V, IOUT=50mA
350
600
VEN≥2.0V, IOUT=150mA
1.3
VEN≥2.0V, IOUT=300mA
4
VEN≥2.0V, IOUT=500mA
11
Nov. 2009 Rev. 1. 5
mV
350
IOUT=300mA
IGND
150
300
VDROP
IOUT=150mA
Ground Pin Current
(Note 6)
50
230
IOUT=100mA
ISTD
mV
70
IOUT=50mA
Standby Current
mV
7
17
15
IOUT=100µA
Dropout Voltage (Note 5)
4.5
12
1
%
180
µA
µA
800
1.9
2.5
10
mA
15
20
28
BCD Semiconductor Manufacturing Limited
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Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Electrical Characteristics (Continued)
AP2213-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ
Ripple Rejection
PSRR
f=100Hz, IOUT=100µA
75
Current Limit
ILIMIT
VOUT=0V
700
Output Noise
eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
260
Enable Input Logic-low
Voltage
VIL
Regulator shutdown
Enable Input Logic-high Voltage
VIH
Regulator enabled
Enable Input Logic-low Current
IIL
Enable Input Logic-high Current
IIH
Thermal Resistance
θJC
VIL≤0.4V
Unit
dB
1000
mA
nV / Hz
0.4
V
0.18
2.0
V
0.01
VIL≤0.18V
VIL≥2.0V
Max
1
µA
2
5
VIL≥2.0V
20
µA
25
TO-252-2 (1)
20
SOIC-8
45
SOT-223
31
o
C/W
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
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Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Electrical Characteristics (Continued)
AP2213-3.0 Electrical Characteristics
VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Variation from specified
VOUT
Min
Typ
Max
-1
1
-2
2
Unit
Output Voltage Accuracy
∆VOUT/VOUT
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
120
µV/oC
(∆VOUT/VOUT)/∆T
40
ppm/oC
1.5
Line Regulation
VRLINE
VIN=4V to 13.2V
Load Regulation
(Note 4)
VRLOAD
IOUT=0.1mA to 500mA
150
140
250
165
mV
250
400
350
600
500
IOUT=500mA
700
VEN≤0.4V (shutdown)
0.01
VEN≤0.18V (shutdown)
1
5
VEN≥2.0V, IOUT=100µA
100
VEN≥2.0V, IOUT=50mA
350
VEN≥2.0V, IOUT=150mA
1.3
VEN≥2.0V, IOUT=300mA
4
VEN≥2.0V, IOUT=500mA
11
Nov. 2009 Rev. 1. 5
275
350
IOUT=300mA
IGND
110
300
VDROP
IOUT=150mA
Ground Pin Current
(Note 6)
50
230
IOUT=100mA
ISTD
mV
70
IOUT=50mA
Standby Current
mV
8
17
15
IOUT=100µA
Dropout Voltage (Note 5)
4.5
12
1
%
µA
150
180
600
µA
800
1.9
2.5
10
mA
15
20
28
BCD Semiconductor Manufacturing Limited
8
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Electrical Characteristics (Continued)
AP2213-3.0 Electrical Characteristics
VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ
Ripple Rejection
PSRR
f=100Hz, IOUT=100µA
75
Current Limit
ILIMIT
VOUT=0V
700
Output Noise
eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
260
Enable Input Logic-low
Voltage
VIL
Regulator shutdown
Enable Input Logic-high Voltage
VIH
Regulator enabled
Enable Input Logic-low Current
IIL
Enable Input Logic-high Current
IIH
Thermal Resistance
θJC
VIL≤0.4V
Unit
dB
1000
mA
nV / Hz
0.4
V
0.18
2.0
V
0.01
VIL≤0.18V
VIL≥2.0V
Max
1
µA
2
5
VIL≥2.0V
20
µA
25
TO-252-2 (1)
20
SOIC-8
45
SOT-223
31
o
C/W
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
9
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Electrical Characteristics (Continued)
AP2213-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Variation from specified
VOUT
Min
Typ
Max
-1
1
-2
2
Unit
Output Voltage Accuracy
∆VOUT/VOUT
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
120
µV/oC
(∆VOUT/VOUT)/∆T
36.3
ppm/oC
1.5
Line Regulation
VRLINE
VIN=4.3V to 13.2V
Load Regulation
(Note 4)
VRLOAD
IOUT=0.1mA to 500mA
110
140
165
250
275
mV
400
500
350
IOUT=500mA
600
700
VEN≤0.4V (shutdown)
0.01
VEN≤0.18V (shutdown)
1
5
VEN≥2.0V, IOUT=100µA
100
VEN≥2.0V, IOUT=50mA
350
VEN≥2.0V, IOUT=150mA
1.3
VEN≥2.0V, IOUT=300mA
4
VEN≥2.0V, IOUT=500mA
11
Nov. 2009 Rev. 1. 5
250
350
IOUT=300mA
IGND
150
300
VDROP
IOUT=150mA
Ground Pin Current
(Note 6)
50
230
IOUT=100mA
ISTD
mV
70
IOUT=50mA
Standby Current
mV
9
18
15
IOUT=100µA
Dropout Voltage (Note 5)
4.5
12
1
%
µA
150
180
600
µA
800
1.9
2.5
10
mA
15
20
28
BCD Semiconductor Manufacturing Limited
10
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Electrical Characteristics (Continued)
AP2213-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ
Ripple Rejection
PSRR
f=100Hz, IOUT=100µA
75
Current Limit
ILIMIT
VOUT=0V
700
Output Noise
eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
260
Enable Input Logic-low
Voltage
VIL
Regulator shutdown
Enable Input Logic-high Voltage
VIH
Regulator enabled
Enable Input Logic-low Current
IIL
Enable Input Logic-high Current
IIH
Thermal Resistance
θJC
VIL≤0.4V
Unit
dB
1000
mA
nV / Hz
0.4
V
0.18
2.0
V
0.01
VIL≤0.18V
VIL≥2.0V
Max
1
µA
2
5
VIL≥2.0V
20
µA
25
TO-252-2 (1)
20
SOIC-8
45
SOT-223
31
o
C/W
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oC≤TJ≤125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
11
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Typical Performance Characteristics
850
2.502
800
Output Voltage (V)
2.498
700
IOUT=100mA
CIN=1µF, COUT=2.2µF
650
IOUT=150mA
600
IOUT=300mA
2.496
2.494
2.492
2.490
550
450
400
350
300
250
200
150
2.486
100
-40
-20
0
20
40
60
80
100
120
50
-60
140
-40
-20
20
40
60
80
100
120
140
Junction Temperature ( C)
Figure 4. Output Voltage vs. Junction Temperature
Figure 5. Dropout Voltage vs. Junction Temperature
20
10
9
18
o
TA=25 C
8
CIN=1µF, COUT=2.2µF
Ground Pin Current (mA)
Ground Pin Current (mA)
0
o
o
Junction Temperature ( C)
7
6
5
4
3
300
400
IOUT=300mA
IOUT=500mA
8
6
0
-60
500
IOUT=150mA
10
2
200
IOUT=100mA
12
1
100
IOUT=50mA
14
4
0
AP2213-2.5
VIN=3.5V, CIN=1µF, COUT=2.2µF
16
2
0
CIN=1µF, COUT=2.2µF
IOUT=500mA
500
2.488
2.484
-60
IOUT=50mA
750
Dropout Voltage (mV)
2.500
AP2213-2.5
VIN=3.5V, IOUT=10mA
-40
-20
0
20
40
60
80
100
120
140
0
Junction Temperature ( C)
Output Current (mA)
Figure 6. Ground Pin Current vs. Output Current
Figure 7. Ground Pin Current vs. Junction Temperature
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
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Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Typical Performance Characteristics (Continued)
1.8
13
12
11
AP2213-2.5, VIN=3.5V
1.7
CIN=1µF, COUT=2.2µF, IOUT=100µA
1.6
VEN=1.8V
1.5
VEN=2V
9
VEN=3V
8
VEN=3.7V
Enable Voltage (V)
Enable Current (µA)
10
7
6
5
IOUT=100µA, VIN=3.5V
1.4
1.3
1.2
1.1
1.0
VEN=logic high
0.9
VEN=logic low
0.8
4
0.7
3
0.6
2
-60
AP2213-2.5
CIN=1µF, COUT=2.2µF
-40
-20
0
20
40
60
80
100
120
0.5
-60
140
-40
-20
0
20
60
80
100
120
140
Junction Temperature ( C)
Figure 9. Enable Voltage vs. Junction Temperature
Figure 8. Enable Current vs. Junction Temperature
100
200
AP2213-2.5
IOUT=10mA, CIN=1µF, COUT=2.2µF
IOUT=10mA
10
CIN=1µF, COUT=2.2µF
Output Noise ( µV/ Hz)
Noise Measurement Filter: DIN Noise
150
Noise (µVrms)
40
o
o
Junction Temperature ( C)
100
VIN=3.5V, CBYP=100pF
1
0.1
0.01
50
0.001
0
10
100
1000
0.0001
10
10000
100
1k
10k
100k
1M
10M
Frequency (Hz)
Bypass Capacitor (pF)
Figure 10. Noise vs. Bypass Capacitor
Figure 11. Output Noise vs. Frequency
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
13
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Typical Performance Characteristics (Continued)
5.5
VIN (1V/Div)
AP2213-2.5
0.5
0
10mA
∆VOUT (10mV/Div)
-0.5
∆VOUT (10mV/Div)
IOUT (0.5A/Div)
1
0
-10
-20
AP2213-2.5
4.5
3.5
2.5
10
0
-10
-20
-30
Time (200µs/Div)
Time (200µs/Div)
Figure 13. Line Transient
(Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100µA,
CBYP=100pF, COUT=2.2µF)
Figure 12. Load Transient
(Conditions: VIN=3.5V, CBYP=100pF, VEN=2V,
IOUT=10 to 500mA, CIN=1µF, COUT=2.2µF)
3
100
VOUT (1V/Div)
2
AP2213-2.5
VIN=3.5V, VRIPPLE=1VPP
90
80
1
IOUT=10mA, COUT=2.2µF
70
0
PSRR (dB)
VEN (1V/Div)
AP2213-2.5
2
60
50
40
30
1
20
0
10
0
10
-1
100
1k
10k
100k
1M
Frequency (Hz)
Time (40µs/Div)
Figure 15. PSRR vs. Frequency
Figure 14. VEN vs. VOUT
(Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA,
CBYP=open, CIN=1µF, COUT=2.2µF)
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
14
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Typical Performance Characteristics (Continued)
1.4
1.4
TO-252-2(1) Package
No Heatsink
SOIC-8 Package
No Heatsink
1.2
Power Dissipation (W)
Power Dissipation (W)
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
0.2
0.0
25
50
75
100
125
0.0
25
150
50
75
100
Figure 16. Power Dissipation vs. Ambient Temperature
1000
COUT=2.2µF
COUT=1µF
No Bypass Capacitor
100
10
Stable Area
1
No Bypass Capacitor
100
ESR (Ω)
ESR (Ω)
150
Figure 17. Power Dissipation vs. Ambient Temperature
1000
10
Stable Area
1
0.1
0.1
0.01
125
o
Ambient Temperature ( C)
o
Ambient Temperature ( C)
0
50
100
150
200
250
300
350
400
450
0.01
500
0
50
100
150
200
250
300
350
400
450
500
Output Current (mA)
Output Current (mA)
Figure 18. ESR vs. Output Current
Figure 19. ESR vs. Output Current
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
15
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Typical Performance Characteristics (Continued)
1000
COUT=4.7µF
No Bypass Capacitor
ESR (Ω)
100
10
Stable Area
1
0.1
0.01
0
50
100
150
200
250
300
350
400
450
500
Output Current (mA)
Figure 20. ESR vs. Output Current
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
16
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Typical Application
VIN=3.5V
VIN
VIN
AP2213-2.5
VOUT
VOUT=2.5V
VOUT
EN
CIN
GND
BYP
1µF
COUT
2.2µF
CBYP
100pF
Figure 21. Typical Application of AP2213 (Note 7)
Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.35V is the minimum
input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage
is VOUT+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(VOUT+1V) to 18V.
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
17
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Application Information
Input Capacitor
A 1µF minimum capacitor is recommended to be
placed between VIN and GND.
To determine if the power dissipated in the regulator
reaches the maximum power dissipation (see figure
16, 17), using:
TJ = PD*θJA + TA
PD=(VIN-VOUT)*IOUT+VIN*IGND
Output Capacitor
It is required to prevent oscillation. 1µF minimum is
recommended when CBYP is unused. 2.2µF minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient
response.
Where: TJ≤TJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be
ignored due to its small value.
TJ(max) is 150oC, θJA is 90oC/W for TO-252-2 (1)
package and 160oC/W for SOIC-8 package.
Noise Bypass Capacitor
Bypass capacitor is connected to the internal voltage
reference. A 100pF capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise, but the ESR
stable area will be narrowed.
Example: For 2.5V version packaged in SOIC-8,
IOUT=500mA, TA=50oC, VIN(Max) is:
(150oC-50oC)/(0.5A*160oC/W)+2.5V=3.75V
The start-up speed of the AP2213 is inversely
proportional to the value of reference bypass
capacitor. In some cases, if output noise is not a
major concern and rapid turn-on is necessary, omit
CBYP and leave BYP open.
Therefore, for good performance, please make sure
that input voltage is less than 3.75V without heatsink
when TA=50oC.
Power Dissipation
Thermal shutdown may take place if exceeding the
maximum power dissipation in application. Under all
possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown.
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
18
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Mechanical Dimensions
1.350(0.053)
1.650(0.065)
TO-252-2(1)
6.350(0.250)
6.650(0.262)
5.200(0.205)
5.400(0.213)
Unit: mm(inch)
2.200(0.087)
2.400(0.094)
0.430(0.017)
0.580(0.023)
4.300(0.169)
5.400(0.212)
5°
0.700(0.028)
0.900(0.035)
0.500(0.020)
0.700(0.028)
2.300TYP
4.500(0.177)
4.700(0.165)
1.400(0.055)
1.780(0.070)
5°
3°
4°
0.430(0.017)
0.580(0.023)
Nov. 2009 Rev. 1. 5
4.800(0.189)
6.500(0.256)
3.800REF(0.150REF)
5.400(0.213)
5.700(0.224)
0.000(0.000)
0.127(0.005)
2.550(0.100)
2.900(0.114)
0.600(0.024)
0.900(0.035)
9.500(0.374)
9.900(0.390)
8°
BCD Semiconductor Manufacturing Limited
19
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Mechanical Dimensions (Continued)
SOIC-8
4.700(0.185)
5.100(0.201)
7°
Unit: mm(inch)
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
φ
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.330(0.013)
0.510(0.020)
0.190(0.007)
0.250(0.010)
0.900(0.035)
1°
5°
R0.150(0.006)
0.450(0.017)
0.800(0.031)
Note: Eject hole, oriented hole and mold mark is optional.
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
20
500mA LOW NOISE LDO REGULATOR
AP2213
Mechanical Dimensions (Continued)
SOT-223
Unit: mm(inch)
6.300(0.248)
6.700(0.264)
)
0.250(0.010
)
14
.0
0.350(0
2.900(0.114)
3.100(0.122)
0.900(0.035)
3.700(0.146)
3.300(0.130)
7.300(0.287)
6.700(0.264)
MIN
0.250(0.010)
1.750(0.069)
TYP
2.300(0.091)
0.610(0.024)
TYP
0.810(0.032)
4.500(0.177)
0°
10°
4.700(0.185)
0.020(0.001)
0.100(0.004)
1.500(0.059)
1.520(0.060)
1.700(0.067)
1.800(0.071)
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
21
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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