Ordering number : EN6324B 2SA608N/2SC536N Bipolar Transistor http://onsemi.com (–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Applicaitons • Capable of being used in the low frequency to high frequency range Features • Large current capacity and wide ASO Specifications ( ) : 2SA608N Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings (--50)60 V (--)50 V VEBO IC (--)6 (--)150 ICP PC Collector Dissipation Unit VCBO VCEO Junction Temperature Tj Storage Temperature Tstg V mA (--)400 mA 500 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7542-001 4.5 3.7 2SA608NF-NPA-AT 2SA608NG-NPA-AT 2SC536NF-NPA-AT 2SC536NG-NPA-AT Package Shipping 2SA608NF-NPA-AT NPA SC-43A, TO-92, TO-226AA, SOT-54 1,500 pcs./box 2SA608NG-NPA-AT NPA SC-43A, TO-92, TO-226AA, SOT-54 1,500 pcs./box 2SC536NF-NPA-AT NPA SC-43A, TO-92, TO-226AA, SOT-54 1,500 pcs./box 2SC536NG-NPA-AT NPA SC-43A, TO-92, TO-226AA, SOT-54 1,500 pcs./box memo Pb-Free 0.45 0.45 LOT No. C536 R A N K LOT No. R A N K A608 Marking 14.0 13.7 0.6 1.27 4.0max 0.5 4.5 1.4max 3.5 Device 0.44 1 2.5 2 3 2.5 1 : Emitter 2 : Collector 3 : Base NPA-WA Semiconductor Components Industries, LLC, 2013 July, 2013 73113 TKIM TC-00003017/O2412 TKIM/42503 TSIM TA-100055, 100056/ No.6324-1/6 10700 TS (KOTO) TA-2543 2SA608N/2SC536N Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)5V, IC=0A hFE1 VCE=(--)6V, IC=(--)1mA VCE=(--)6V, IC=(--)0.1mA hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector to Emitter Saturation Voltage Collector to Base Breakdown Voltage min typ V(BR)CBO V(BR)CEO Emitter to Base Breakdown Voltage V(BR)EBO (--)0.1 μA (--)0.1 μA 560* 70 200 VCB=(--)6V, f=1MHz IC=(--)100mA, IB=(--)10mA Collector to Emitter Breakdown Voltage Unit max 160* VCE=(--)6V, IC=(--)10mA VCE(sat) VBE(sat) Base to Emitter Saturation Voltage Ratings Conditions MHz (4.5)3.0 IC=(--)100mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A pF (--)0.3 V (--)1.0 V (--)60 V (--)50 V (--)6 V * : The 2SA608N / 2SC536N are classified by 1mA hFE as follow : Rank hFE F 160 to 320 IC -- VCE μA --50 μA --45 A --40μ A --35μ A --30μ --12 --25μA --20μA --8 --15μA --10μA --4 IC -- VCE 20 2SA608N 2SC536N 50μA 45μA Collector Current, IC -- mA --16 16 40μA 35μA 12 30μA 25μA 8 20μA 15μA 4 10μA --5μA 0 0 --10 --20 --30 --40 Collector to Emitter Voltage, VCE -- V 0 0 --50 20 30 40 50 IT00497 IC -- VBE 240 2SA608N VCE= --6V 2SC536N VCE=6V 200 --160 --120 Ta=7 5°C 25°C --25° C --80 --40 160 120 Ta=75 °C Collector Current, IC -- mA --200 Collector Current, IC -- mA 10 Collector to Emitter Voltage, VCE -- V IT00496 IC -- VBE --240 IB=0μA 5μA IB=0μA 80 25°C --25°C Collector Current, IC -- mA G 280 to 560 40 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V --1.2 IT00498 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE -- V 1.2 IT00499 No.6324-2/6 2SA608N/2SC536N hFE -- IC 1000 7 Ta=75°C 2 --25°C 25°C 100 7 5 5 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 2 3 Collector Current, IC -- mA 5 7--1000 IT00500 0.1 7 5 3 2 100 7 5 3 2 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 3 2 1.0 7 5 3 2 0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector to Base Voltage, VCB -- V 5 3 2 --0.1 7 5 3 2 5 7 1000 IT00501 3 2 100 7 5 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT00503 Cob -- VCB 2SC536N f=1MHz 3 2 10 7 5 3 2 1.0 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector to Base Voltage, VCB -- V 5 7 100 IT00505 VCE(sat) -- IC 2SC536N IC / IB=10 7 Collector to Emitter Saturation Voltage, VCE(sat) -- V 7 2 3 2SC536N VCE=6V 1.0 2SA608N IC / IB= --10 5 7 100 5 0.1 0.1 5 7 --100 IT00504 VCE(sat) -- IC --1.0 2 3 f T -- IC 100 7 5 Output Capacitance, Cob -- pF 10 7 5 5 7 10 Collector Current, IC -- mA 2SA608N f=1MHz 3 2 2 3 7 10 1.0 5 7--1000 IT00502 Cob -- VCB 100 7 5 5 7 1.0 1000 Gain-Bandwidth Product, f T -- MHz 2SA608N VCE= --6V 2 3 Collector Current, IC -- mA f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 5 10 --0.1 2 3 Output Capacitance, Cob -- pF 25°C 7 2 5 3 2 0.1 7 5 3 2 0.01 --0.01 --1.0 --25°C 100 3 --0.1 Ta=75°C 2 2 10 Collector to Emitter Saturation Voltage, VCE(sat) -- V 3 3 10 --1.0 2SC536N VCE=6V 7 DC Current Gain, hFE DC Current Gain, hFE 5 3 hFE -- IC 1000 2SA608N VCE= --6V 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT00506 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT00507 No.6324-3/6 2SA608N/2SC536N ASO 1000 ICP=400mA 3 2 10 IC=150mA ms 10 100 DC 7 5 0m s op era tio 3 2SA608N / 2SC536N Collector Dissipation, PC -- mW Collector Current, IC -- mA 7 5 PC -- Ta 600 2SA608N / 2SC536N For PNP, minus sign is omitted. n 2 10 7 5 3 2 500 400 300 200 100 0 5 7 1.0 2 3 5 7 10 2 3 Collector to Emitter Voltage, VCE -- V 5 7 100 IT00511 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00510 No.6324-4/6 2SA608N/2SC536N Outline Drawing 2SA608NF-NPA-AT, 2SA608NG-NPA-AT, 2SC536NF-NPA-AT, 2SC536NG-NPA-AT Mass (g) Unit 0.19 mm * For reference No.6324-5/6 2SA608N/2SC536N ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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