Jiangsu BZX584B4V3 Zener diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diode
BZX584B2V4-BZX584B39
ZENER DIODE
SOD-523
FEATURES
z Planar Die Construction
z 150mW Power Dissipation
z Zener Voltages from 2.4 – 39V
MAXIMUM RATINGS(Ta=25℃ unless otherwise specified )
Characteristic
Symbol
Value
Unit
VF
0.9
V
PD
150
mW
RθJA
833
℃/W
JunctionTemperature
TJ
150
℃
Storage Temperature
TSTG
Forward Voltage
@IF=10mA
Power Dissipation (Note 1)
Thermal Resistance from Junction to Ambient
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1
-55~+150
℃
C,Sep,2014
ELECTRICAL CHARACTERISTICS
Ta=25℃ unless otherwise specified
Typical
Maximum Zener Impedance
(Note 3)
Zener Voltage Range (Note 2)
Type Number
Type
Code
Maximum
Reverse
Current
Temperature
Coefficent
@IZT=5 mA
mV/°C
VZ@IZT
IZT
Nom(V)
Min(V)
Max(V)
mA
ZZT@IZT
ZZK@IZK
Ω
IZK
IR
VR
mA
μA
V
Min
Max
BZX584B2V4
2V1
2.4
2.35
2.45
5
100
600
1.0
50
1.0
-3.5
0
BZX584B2V7
2V2
2.7
2.65
2.75
5
100
600
1.0
20
1.0
-3.5
0
BZX584B3V0
2V3
3
2.94
3.06
5
95
600
1.0
10
1.0
-3.5
0
BZX584B3V3
2V4
3.3
3.23
3.37
5
95
600
1.0
5
1.0
-3.5
0
BZX584B3V6
2V5
3.6
3.53
3.67
5
90
600
1.0
5
1.0
-3.5
0
BZX584B3V9
2V6
3.9
3.82
3.98
5
90
600
1.0
3
1.0
-3.5
0
BZX584B4V3
2V7
4.3
4.21
4.39
5
90
600
1.0
3
1.0
-3.5
0
BZX584B4V7
2Z1
4.7
4.61
4.79
5
80
500
1.0
3
2.0
-3.5
0.2
BZX584B5V1
2Z2
5.1
5.00
5.20
5
60
480
1.0
2
2.0
-2.7
1.2
BZX584B5V6
2Z3
5.6
5.49
5.71
5
40
400
1.0
1
2.0
-2.0
2.5
BZX584B6V2
2Z4
6.2
6.08
6.32
5
10
150
1.0
3
4.0
0.4
3.7
BZX584B6V8
2Z5
6.8
6.66
6.94
5
15
80
1.0
2
4.0
1.2
4.5
BZX584B7V5
2Z6
7.5
7.35
7.65
5
15
80
1.0
1
5.0
2.5
5.3
BZX584B8V2
2Z7
8.2
8.04
8.36
5
15
80
1.0
0.7
5.0
3.2
6.2
BZX584B9V1
2Z8
9.1
8.92
9.28
5
15
100
1.0
0.5
6.0
3.8
7.0
BZX584B10
2Z9
10
9.80
10.20
5
20
150
1.0
0.2
7.0
4.5
8.0
BZX584B11
2Y1
11
10.78
11.22
5
20
150
1.0
0.1
8.0
5.4
9.0
BZX584B12
2Y2
12
11.76
12.24
5
25
150
1.0
0.1
8.0
6.0
10.0
BZX584B13
2Y3
13
12.74
13.26
5
30
170
1.0
0.1
8.0
7.0
11.0
BZX584B15
2Y4
15
14.70
15.30
5
30
200
1.0
0.1
10.5
9.2
13.0
BZX584B16
2Y5
16
15.68
16.32
5
40
200
1.0
0.1
11.2
10.4
14.0
BZX584B18
2Y6
18
17.64
18.36
5
45
225
1.0
0.1
12.6
12.4
16.0
BZX584B20
2Y7
20
19.60
20.40
5
55
225
1.0
0.1
14.0
14.4
18.0
BZX584B22
2Y8
22
21.56
22.44
5
55
250
1.0
0.1
15.4
16.4
20.0
BZX584B24
2Y9
24
23.52
24.48
5
70
250
1.0
0.1
16.8
18.4
22.0
BZX584B27
2X1
27
26.46
27.54
2
80
300
0.5
0.1
18.9
21.4
25.3
BZX584B30
2X2
30
29.40
30.60
2
80
300
0.5
0.1
21.0
24.4
29.4
BZX584B33
2X3
33
32.34
33.66
2
80
325
0.5
0.1
23.1
27.4
33.4
BZX584B36
2X4
36
35.28
36.72
2
90
350
0.5
0.1
25.2
30.4
37.4
BZX584B39
2X5
39
38.22
39.78
2
130
350
0.5
0.1
27.3
33.4
41.2
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms,pulse width =300μs.
3. f=1kHz.
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C,Sep,2014
Typical Characteristics
Notes: Our company currently provide 5.1 V - 20 V products only
Zener Characteristics(VZ 5.1V to 20 V)
100
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
Pulsed
PD =150mW
20
18
16
15
13
11
12
10
9.1
7.5
8.2
6.2
6.8
5.1
10
5.6
IZ, ZENER CURRENT (mA)
Temperature Coefficients
20
Ta =25℃
1
0.5
TYPICAL Ta VALUES
FOR BZX584BXXX SERIES
15
VZ @ IZT
10
5
0
4
6
8
10
12
14
16
18
20
4
22
6
8
VZ, ZENER VOLTAGE (V)
12
14
16
18
20
22
Typical Capacitance
Typical Leakage Current
0.1
10
VZ, NOMINAL ZENER VOLTAGE (V)
1000
Ta=25℃
Pulsed
C, CAPACITANCE (pF)
IR, LEAKAGE CURRENT (uA)
f=1MHz
0.01
Ta=100℃
1E-3
0V BIAS
100
1V BIAS
10
BIAS AT
50% OF VZ NOM
Ta=25℃
1E-4
1
4
6
8
10
12
14
16
18
20
22
4
6
8
10
12
14
16
18
20
22
VZ, NOMINAL ZENER VOLTAGE (V)
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
Effect of Zener Voltage on Zener Impedance
1000
200
Ta=25℃
(mW)
f=1kHz
150
PD
100
10
POWER DISSIPATION
ZZT, DYNAMIC IMPEDANCE(Ω)
IZ(AC)=0.1IZ(DC)
IZ=5mA
100
50
IZ=1mA
1
0
4
6
8
10
12
14
16
18
20
22
0
VZ, NOMINAL ZENER VOLTAGE (V)
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25
50
75
AMBIENT TEMPERATURE
3
125
100
Ta
150
(℃ )
C,Sep,2014
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