MBRA120T3 THRU MBRA1100T3 20V-100V 1.0A CHIP SCHOTTKY BARRIER DIODES FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. MECHANICAL DATA Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 0.5 mA 10 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage Storage temperature MARKING CODE *1 V RMS *2 VR *3 (V) (V) (V) MBRA120T3 SS12 20 14 20 MBRA130T3 SS13 30 21 30 MBRA140T3 SS14 40 28 40 MBRA150T3 SS15 50 35 50 MBRA160T3 SS16 60 42 60 MBRA180T3 SS18 80 56 80 MBRA1100T3 S110 100 70 100 E-mail: [email protected] VF *4 120 -55 mA o 88 CJ TSTG V RRM TYP. IR VR = VRRM TA = 125o C Thermal resistance SYMBOLS MIN. C / w pF +150 o C Operating temperature (V) (o C) 0.50 -55 to +125 *1 Repetitive peak reverse voltage 0.70 *2 RMS voltage -55 to +150 0.85 1 of 2 *3 Continuous reverse voltage *4 Maximum forward voltage Web Site: www.taychipst.com MBRA120T3 THRU MBRA1100T3 20V-100V 1.0A CHIP SCHOTTKY BARRIER DIODES RATINGS AND CHARACTERISTIC CURVES MBRA120T3 THRU MBRA1100T3 FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 0 0 0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT M BR A1 20 ~M BR A 10 A1 4 A1 BR ~M 0.2 R MB 0~ 20 15 A1 0.4 10 M BR A1 50 ~M BR A1 60 RA MB 0.6 INSTANTANEOUS FORWARD CURRENT,(A) 0.8 14 0 50 1.0 R MB AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 1.2 3.0 1.0 BR M A1 80 BR ~M 10 A1 0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 30 .01 24 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 18 8.3ms Single Half Tj=25 C Sine Wave 12 JEDEC method 6 FIG.5 - TYPICAL REVERSE 0 CHARACTERISTICS 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 350 300 250 200 150 100 10 1.0 Tj=75 C .1 Tj=25 C 50 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) E-mail: [email protected] .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) 2 of 2 Web Site: www.taychipst.com