Single N-channel Trench MOSFET 60V, 50A, 10mΩ ㄹ Features General Description The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD06N100 is suitable device for Synchronous Rectification For Server and general purpose applications. VDS = 60V ID = 50A @VGS = 10V RDS(ON) < 10.0 mΩ @VGS = 10V 100% UIL Tested D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 60 V VGSS ±20 V o TC=25 C (Silicon Limited) Continuous Drain Current o (1) TC=25 C (Package Limited) 55 50 ID TC=100oC Pulsed Drain Current IDM 200 o TC=25 C Power Dissipation A 35 60 PD o W TC=100 C 24 Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 84.5 TJ, Tstg -55~150 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 2015. Version 1.0 1 Symbol Rating RθJA 50 RθJC 2.1 Unit o C/W MagnaChip Semiconductor Ltd. MDD06N100 – Single N-Channel Trench MOSFET 60V MDD06N100 Part Number Temp. Range MDD06N100RH o -55~150 C Package Packing Rohs Status D-PAK Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 60 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.2 2.2 3.2 V Drain Cut-Off Current IDSS VDS = 48V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID = 50A - 7.0 10.0 mΩ gfs VDS = 10V, ID = 50A - 55 - S - 32.2 - - 12.5 - Drain-Source ON Resistance Forward Transconductance μA Dynamic Characteristics Total Gate Charge Qg(10V) VDS = 30V, ID = 50A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd - 5.0 - Input Capacitance Ciss - 2642.4 - - 26.8 - Reverse Transfer Capacitance Crss VDS = 50V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 457.2 - Turn-On Delay Time td(on) - 17.1 - - 18.4 - - 31.3 - - 7.9 - - 0.80 1.2 V - 59.0 - ns - 193.2 - nC Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 30V, ID = 50A , RG = 3.0Ω tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 50A, VGS = 0V IF = 50A, dl/dt = 200A/μs Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS =13.0A, VGS = 10V Apr. 2015. Version 1.0 2 MagnaChip Semiconductor Ltd. MDD06N100 – Single N-Channel Trench MOSFET 60V Ordering Information 9 8.0V ID, Drain Current [A] 80 Drain-Source On-Resistance [mΩ] VGS = 10V 90 6.0V 70 5.0V 60 50 40 4.5V 30 20 4.0V 8 VGS = 10V 7 6 10 3.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 5.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 VDS, Drain-Source Voltage [V] ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 30 2.4 1. VGS = 10 V 2. ID = 10.0 A 2.0 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance ※ Notes : ※ Notes : 2.2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 10.0A 25 20 15 TJ = 25℃ 10 5 0.4 0.2 -50 0 -25 0 25 50 75 100 125 2 150 3 Fig.3 On-Resistance Variation with Temperature 5 6 7 8 9 10 Fig.4 On-Resistance Variation with Gate to Source Voltage 50 2 10 ※ Notes : 45 ※ Notes : VGS = 0V IDR, Reverse Drain Current [A] VDS = 10V 40 ID, Drain Current [A] 4 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] 35 30 TJ=25℃ 25 20 15 10 1 10 TJ=25℃ 0 10 5 0 0 1 2 3 4 5 6 0.3 7 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Apr. 2015. Version 1.0 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD06N100 – Single N-Channel Trench MOSFET 60V 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 50A VDS = 30V 3000 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 2500 6 4 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 2000 1500 Coss 1000 2 500 Crss 0 0 0 5 10 15 20 25 30 0 35 5 Fig.7 Gate Charge Characteristics 10 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 3 60 55 50 10 2 10 us 100 us 1 Operation in This Area is Limited by R DS(on) 10 45 ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 100 ms DC 0 -1 30 25 20 10 5 -1 10 35 15 Single Pulse TJ=Max rated TC=25℃ 10 40 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 D=0.5 0 10 0.2 0.1 0.05 -1 10 0.02 Zθ JC , Thermal Response 10 0.01 ※ Notes : single pulse Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Apr. 2015. Version 1.0 4 MagnaChip Semiconductor Ltd. MDD06N100 – Single N-Channel Trench MOSFET 60V 3500 10 MDD06N100 – Single N-Channel Trench MOSFET 60V Package Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified Worldwide Sales Support Locations Apr. 2015. Version 1.0 5 MagnaChip Semiconductor Ltd. MDD06N100 – Single N-Channel Trench MOSFET 60V SCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Apr. 2015. Version 1.0 6 MagnaChip Semiconductor Ltd.