Freescale MPC8533HXAAFB Powerquiccâ ¢ iii integrated processor hardware specification Datasheet

Freescale Semiconductor
Technical Data
Document Number: MPC8533EEC
Rev. 3, 11/2009
MPC8533E PowerQUICC™ III
Integrated Processor
Hardware Specifications
1
MPC8533E Overview
This section provides a high-level overview of MPC8533E
features. Figure 1 shows the major functional units within
the device.
1.1
Key Features
The following list provides an overview of the device feature
set:
• High-performance 32-bit Book E–enhanced core
built on Power Architecture™ technology:
— 32-Kbyte L1 instruction cache and 32-Kbyte L1
data cache with parity protection. Caches can be
locked entirely or on a per-line basis, with
separate locking for instructions and data.
— Signal-processing engine (SPE) APU (auxiliary
processing unit). Provides an extensive
instruction set for vector (64-bit) integer and
fractional operations. These instructions use both
the upper and lower words of the 64-bit GPRs as
they are defined by the SPE APU.
© Freescale Semiconductor, Inc., 2008, 2009. All rights reserved.
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Contents
MPC8533E Overview . . . . . . . . . . . . . . . . . . . . . . . . . 1
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . 8
Power Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 13
Input Clocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
RESET Initialization . . . . . . . . . . . . . . . . . . . . . . . . . 16
DDR and DDR2 SDRAM . . . . . . . . . . . . . . . . . . . . . 17
DUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Enhanced Three-Speed Ethernet (eTSEC),
MII Management . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Ethernet Management Interface Electrical
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Local Bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Programmable Interrupt Controller . . . . . . . . . . . . . 51
JTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
I2C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
GPIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
PCI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
High-Speed Serial Interfaces (HSSI) . . . . . . . . . . . . 60
PCI Express . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Package Description . . . . . . . . . . . . . . . . . . . . . . . . . 78
Clocking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Thermal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
System Design Information . . . . . . . . . . . . . . . . . . 102
Device Nomenclature . . . . . . . . . . . . . . . . . . . . . . . 111
Document Revision History . . . . . . . . . . . . . . . . . . 114
MPC8533E Overview
— Double-precision floating-point APU. Provides an instruction set for double-precision (64-bit)
floating-point instructions that use the 64-bit GPRs.
— 36-bit real addressing
— Embedded vector and scalar single-precision floating-point APUs. Provide an instruction set
for single-precision (32-bit) floating-point instructions.
— Memory management unit (MMU). Especially designed for embedded applications. Supports
4-Kbyte–4-Gbyte page sizes.
— Enhanced hardware and software debug support
— Performance monitor facility that is similar to, but separate from, the device performance
monitor
The e500 defines features that are not implemented on this device. It also generally defines some features
that this device implements more specifically. An understanding of these differences can be critical to
ensure proper operations.
• 256-Kbyte L2 cache/SRAM
— Flexible configuration
— Full ECC support on 64-bit boundary in both cache and SRAM modes
— Cache mode supports instruction caching, data caching, or both.
— External masters can force data to be allocated into the cache through programmed memory
ranges or special transaction types (stashing).
– 1, 2, or 4 ways can be configured for stashing only.
— Eight-way set-associative cache organization (32-byte cache lines)
— Supports locking entire cache or selected lines. Individual line locks are set and cleared through
Book E instructions or by externally mastered transactions.
— Global locking and flash clearing done through writes to L2 configuration registers
— Instruction and data locks can be flash cleared separately.
— SRAM features include the following:
– I/O devices access SRAM regions by marking transactions as snoopable (global).
– Regions can reside at any aligned location in the memory map.
– Byte-accessible ECC is protected using read-modify-write transaction accesses for
smaller-than-cache-line accesses.
• Address translation and mapping unit (ATMU)
— Eight local access windows define mapping within local 36-bit address space.
— Inbound and outbound ATMUs map to larger external address spaces.
– Three inbound windows plus a configuration window on PCI and PCI Express
– Four outbound windows plus default translation for PCI and PCI Express
• DDR/DDR2 memory controller
— Programmable timing supporting DDR and DDR2 SDRAM
— 64-bit data interface
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
MPC8533E Overview
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—
—
—
•
•
Four banks of memory supported, each up to 4 Gbytes, to a maximum of 16 Gbytes
DRAM chip configurations from 64 Mbits to 4 Gbits with x8/x16 data ports
Full ECC support
Page mode support
– Up to 16 simultaneous open pages for DDR
– Up to 32 simultaneous open pages for DDR2
— Contiguous or discontiguous memory mapping
— Sleep mode support for self-refresh SDRAM
— On-die termination support when using DDR2
— Supports auto refreshing
— On-the-fly power management using CKE signal
— Registered DIMM support
— Fast memory access via JTAG port
— 2.5-V SSTL_2 compatible I/O (1.8-V SSTL_1.8 for DDR2)
Programmable interrupt controller (PIC)
— Programming model is compliant with the OpenPIC architecture.
— Supports 16 programmable interrupt and processor task priority levels
— Supports 12 discrete external interrupts
— Supports 4 message interrupts with 32-bit messages
— Supports connection of an external interrupt controller such as the 8259 programmable
interrupt controller
— Four global high resolution timers/counters that can generate interrupts
— Supports a variety of other internal interrupt sources
— Supports fully nested interrupt delivery
— Interrupts can be routed to external pin for external processing.
— Interrupts can be routed to the e500 core’s standard or critical interrupt inputs.
— Interrupt summary registers allow fast identification of interrupt source.
Integrated security engine (SEC) optimized to process all the algorithms associated with IPSec,
IKE, WTLS/WAP, SSL/TLS, and 3GPP
— Four crypto-channels, each supporting multi-command descriptor chains
– Dynamic assignment of crypto-execution units via an integrated controller
– Buffer size of 256 bytes for each execution unit, with flow control for large data sizes
— PKEU—public key execution unit
– RSA and Diffie-Hellman; programmable field size up to 2048 bits
– Elliptic curve cryptography with F2m and F(p) modes and programmable field size up to
511 bits
— DEU—Data Encryption Standard execution unit
– DES, 3DES
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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MPC8533E Overview
•
•
•
•
– Two key (K1, K2, K1) or three key (K1, K2, K3)
– ECB and CBC modes for both DES and 3DES
— AESU—Advanced Encryption Standard unit
– Implements the Rijndael symmetric key cipher
– ECB, CBC, CTR, and CCM modes
– 128-, 192-, and 256-bit key lengths
— AFEU—ARC four execution unit
– Implements a stream cipher compatible with the RC4 algorithm
– 40- to 128-bit programmable key
— MDEU—message digest execution unit
– SHA with 160- or 256-bit message digest
– MD5 with 128-bit message digest
– HMAC with either algorithm
— KEU—Kasumi execution unit
– Implements F8 algorithm for encryption and F9 algorithm for integrity checking
– Also supports A5/3 and GEA-3 algorithms
— RNG—random number generator
— XOR engine for parity checking in RAID storage applications
Dual I2C controllers
— Two-wire interface
— Multiple master support
— Master or slave I2C mode support
— On-chip digital filtering rejects spikes on the bus
Boot sequencer
— Optionally loads configuration data from serial ROM at reset via the I2C interface
— Can be used to initialize configuration registers and/or memory
— Supports extended I2C addressing mode
— Data integrity checked with preamble signature and CRC
DUART
— Two 4-wire interfaces (SIN, SOUT, RTS, CTS)
— Programming model compatible with the original 16450 UART and the PC16550D
Local bus controller (LBC)
— Multiplexed 32-bit address and data bus operating at up to 166 MHz
— Eight chip selects support eight external slaves
— Up to eight-beat burst transfers
— The 32-, 16-, and 8-bit port sizes are controlled by an on-chip memory controller.
— Two protocol engines available on a per chip select basis:
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
MPC8533E Overview
•
– General-purpose chip select machine (GPCM)
– Three user programmable machines (UPMs)
— Parity support
— Default boot ROM chip select with configurable bus width (8, 16, or 32 bits)
Two enhanced three-speed Ethernet controllers (eTSECs)
— Three-speed support (10/100/1000 Mbps)
— Two IEEE Std 802.3®, IEEE 802.3u, IEEE 802.3x, IEEE 802.3z, IEEE 802.3ac, and
IEEE 802.3ab-compliant controllers
— Support for various Ethernet physical interfaces:
– 1000 Mbps full-duplex IEEE 802.3 GMII, IEEE 802.3z TBI, RTBI, and RGMII.
– 10/100 Mbps full- and half-duplex IEEE 802.3 MII, IEEE 802.3 RGMII, and RMII.
— Flexible configuration for multiple PHY interface configurations.
— TCP/IP acceleration and QoS features available
– IP v4 and IP v6 header recognition on receive
– IP v4 header checksum verification and generation
– TCP and UDP checksum verification and generation
– Per-packet configurable acceleration
– Recognition of VLAN, stacked (queue in queue) VLAN, 802.2, PPPoE session, MPLS
stacks, and ESP/AH IP-security headers
– Supported in all FIFO modes
— Quality of service support:
– Transmission from up to eight physical queues
– Reception to up to eight physical queues
— Full- and half-duplex Ethernet support (1000 Mbps supports only full duplex):
– IEEE 802.3 full-duplex flow control (automatic PAUSE frame generation or
software-programmed PAUSE frame generation and recognition)
— Programmable maximum frame length supports jumbo frames (up to 9.6 Kbytes) and
IEEE Std 802.1™ virtual local area network (VLAN) tags and priority
— VLAN insertion and deletion
– Per-frame VLAN control word or default VLAN for each eTSEC
– Extracted VLAN control word passed to software separately
— Retransmission following a collision
— CRC generation and verification of inbound/outbound frames
— Programmable Ethernet preamble insertion and extraction of up to 7 bytes
— MAC address recognition:
– Exact match on primary and virtual 48-bit unicast addresses
– VRRP and HSRP support for seamless router fail-over
– Up to 16 exact-match MAC addresses supported
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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MPC8533E Overview
•
•
•
– Broadcast address (accept/reject)
– Hash table match on up to 512 multicast addresses
– Promiscuous mode
— Buffer descriptors backward compatible with MPC8260 and MPC860T 10/100 Ethernet
programming models
— RMON statistics support
— 10-Kbyte internal transmit and 2-Kbyte receive FIFOs
— MII management interface for control and status
— Ability to force allocation of header information and buffer descriptors into L2 cache
OCeaN switch fabric
— Full crossbar packet switch
— Reorders packets from a source based on priorities
— Reorders packets to bypass blocked packets
— Implements starvation avoidance algorithms
— Supports packets with payloads of up to 256 bytes
Integrated DMA controller
— Four-channel controller
— All channels accessible by both the local and remote masters
— Extended DMA functions (advanced chaining and striding capability)
— Support for scatter and gather transfers
— Misaligned transfer capability
— Interrupt on completed segment, link, list, and error
— Supports transfers to or from any local memory or I/O port
— Selectable hardware-enforced coherency (snoop/no snoop)
— Ability to start and flow control each DMA channel from external 3-pin interface
— Ability to launch DMA from single write transaction
PCI controller
— PCI 2.2 compatible
— One 32-bit PCI port with support for speeds from 16 to 66 MHz
— Host and agent mode support
— 64-bit dual address cycle (DAC) support
— Supports PCI-to-memory and memory-to-PCI streaming
— Memory prefetching of PCI read accesses
— Supports posting of processor-to-PCI and PCI-to-memory writes
— PCI 3.3-V compatible
— Selectable hardware-enforced coherency
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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MPC8533E Overview
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•
•
•
•
•
Three PCI Express interfaces
— Two ×4 link width interfaces and one ×1 link width interface
— PCI Express 1.0a compatible
— Auto-detection of number of connected lanes
— Selectable operation as root complex or endpoint
— Both 32- and 64-bit addressing
— 256-byte maximum payload size
— Virtual channel 0 only
— Traffic class 0 only
— Full 64-bit decode with 32-bit wide windows
Power management
— Supports power saving modes: doze, nap, and sleep
— Employs dynamic power management, which automatically minimizes power consumption of
blocks when they are idle
System performance monitor
— Supports eight 32-bit counters that count the occurrence of selected events
— Ability to count up to 512 counter-specific events
— Supports 64 reference events that can be counted on any of the 8 counters
— Supports duration and quantity threshold counting
— Burstiness feature that permits counting of burst events with a programmable time between
bursts
— Triggering and chaining capability
— Ability to generate an interrupt on overflow
System access port
— Uses JTAG interface and a TAP controller to access entire system memory map
— Supports 32-bit accesses to configuration registers
— Supports cache-line burst accesses to main memory
— Supports large block (4-Kbyte) uploads and downloads
— Supports continuous bit streaming of entire block for fast upload and download
IEEE Std 1149.1™-compliant, JTAG boundary scan
783 FC-PBGA package
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Electrical Characteristics
MPC8533E
e500 Core
32-Kbyte
I-Cache
XOR
Acceleration
Local
Bus
Security
Acceleration
Performance
Monitor
DUART
2x I2C
32-Kbyte
D-Cache
e500
Coherency
Module
OpenPIC
Gigabit
Ethernet
256-Kbyte
L2
Cache
64-Bit
DDR/DDR2
SDRAM
Controller
32-Bit
PCI
PCI
Express
x4/x2/x1
PCI
Express
x1
PCI
Express
x4/x2/x1
DMA
Figure 1. MPC8533E Block Diagram
2
Electrical Characteristics
This section provides the AC and DC electrical specifications and thermal characteristics for the
MPC8533E. This device is currently targeted to these specifications. Some of these specifications are
independent of the I/O cell, but are included for a more complete reference. These are not purely I/O buffer
design specifications.
2.1
Overall DC Electrical Characteristics
This section covers the ratings, conditions, and other characteristics.
2.1.1
Absolute Maximum Ratings
Table 1 provides the absolute maximum ratings.
Table 1. Absolute Maximum Ratings1
Characteristic
Symbol
Max Value
Unit
Notes
Core supply voltage
VDD
–0.3 to 1.1
V
—
PLL supply voltage
AVDD
–0.3 to 1.1
V
—
Core power supply for SerDes transceivers
SVDD
–0.3 to 1.1
V
—
Pad power supply for SerDes transceivers
XVDD
–0.3 to 1.1
V
—
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Electrical Characteristics
Table 1. Absolute Maximum Ratings1 (continued)
Characteristic
Symbol
Max Value
Unit
Notes
GVDD
–0.3 to 2.75
–0.3 to 1.98
V
—
LVDD (eTSEC1)
–0.3 to 3.63
–0.3 to 2.75
V
—
TVDD (eTSEC3)
–0.3 to 3.63
–0.3 to 2.75
V
—
PCI, DUART, system control and power management, I2C, and
JTAG I/O voltage
OV DD
–0.3 to 3.63
V
—
Local bus I/O voltage
BVDD
–0.3 to 3.63
–0.3 to 2.75
–0.3 to 1.98
V
—
Input voltage
MVIN
–0.3 to (GV DD + 0.3)
V
2
DDR/DDR2 DRAM reference
MVREF
–0.3 to (GV DD + 0.3)
V
2
Three-speed Ethernet signals
LVIN
TVIN
–0.3 to (LVDD + 0.3)
–0.3 to (TVDD + 0.3)
V
2
Local bus signals
BVIN
–0.3 to (BVDD + 0.3)
V
—
DUART, SYSCLK, system control and power
management, I2C, and JTAG signals
OVIN
–0.3 to (OV DD + 0.3)
V
2
PCI
OVIN
–0.3 to (OV DD + 0.3)
V
2
TSTG
–55 to 150
°C
—
DDR and DDR2 DRAM I/O voltage
Three-speed Ethernet I/O, MII management voltage
DDR/DDR2 DRAM signals
Storage temperature range
Notes:
1. Functional and tested operating conditions are given in Table 2. Absolute maximum ratings are stress ratings only, and
functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause.
2. (M,L,O)VIN, and MVREF may overshoot/undershoot to a voltage and for a maximum duration as shown in Figure 2.
2.1.2
Recommended Operating Conditions
Table 2 provides the recommended operating conditions for this device. Note that the values in Table 2 are
the recommended and tested operating conditions. Proper device operation outside these conditions is not
guaranteed.
Table 2. Recommended Operating Conditions
Symbol
Recommended
Value
Unit
Notes
Core supply voltage
VDD
1.0 ± 50 mV
V
—
PLL supply voltage
AVDD
1.0 ± 50 mV
V
1
Core power supply for SerDes transceivers
SVDD
1.0 ± 50 mV
V
—
Pad power supply for SerDes transceivers
XVDD
1.0 ± 50 mV
V
—
DDR and DDR2 DRAM I/O voltage
GVDD
2.5 V ± 125 mV
1.8 V ± 90 mV
V
2
Characteristic
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
9
Electrical Characteristics
Table 2. Recommended Operating Conditions (continued)
Symbol
Recommended
Value
LVDD
(eTSEC1)
3.3 V ± 165 mV
2.5 V ± 125 mV
TVDD
(eTSEC3)
3.3 V ± 165 mV
2.5 V ± 125 mV
PCI, DUART, PCI Express, system control and power management, I2C,
and JTAG I/O voltage
OV DD
Local bus I/O voltage
Input voltage
Unit
Notes
V
4
3.3 V ± 165 mV
V
3
BVDD
3.3 V ± 165 mV
2.5 V ± 125 mV
1.8 V ± 90 mV
V
5
MVIN
GND to GVDD
V
2
MVREF
GND to GVDD/2
V
2
Three-speed Ethernet signals
LVIN
TVIN
GND to LVDD
GND to TVDD
V
4
Local bus signals
BVIN
GND to BVDD
V
5
PCI, Local bus, DUART, SYSCLK, system control
and power management, I2C, and JTAG signals
OVIN
GND to OVDD
V
3
Tj
0 to 90
°C
—
Characteristic
Three-speed Ethernet I/O voltage
DDR and DDR2 DRAM signals
DDR and DDR2 DRAM reference
Junction temperature range
Notes:
1. This voltage is the input to the filter discussed in Section 21.2, “PLL Power Supply Filtering,” and not necessarily the voltage
at the AVDD pin, which may be reduced from V DD by the filter.
2. Caution: MVIN must not exceed GVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
3. Caution: OVIN must not exceed OVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
4. Caution: T/LVIN must not exceed T/ LVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
5. Caution: BVIN must not exceed BV DD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Electrical Characteristics
Figure 2 shows the undershoot and overshoot voltages at the interfaces of the MPC8533E.
B/G/L/OV DD + 20%
B/G/L/OV DD + 5%
B/G/L/OVDD
VIH
GND
GND – 0.3 V
VIL
GND – 0.7 V
Not to Exceed 10%
of t CLOCK1
Notes:
1. tCLOCK refers to the clock period associated with the respective interface:
For I2C and JTAG, tCLOCK references SYSCLK.
For DDR, tCLOCK references MCLK.
For eTSEC, tCLOCK references EC_GTX_CLK125.
For LBIU, tCLOCK references LCLK.
For PCI, tCLOCK references PCI_CLK or SYSCLK.
2. Please note that with the PCI overshoot allowed (as specified above), the device
does not fully comply with the maximum AC ratings and device protection
guideline outlined in Section 4.2.2.3 of the PCI 2.2 Local Bus Specifications.
Figure 2. Overshoot/Undershoot Voltage for GVDD/OVDD/LVDD/BVDD/TVDD
The core voltage must always be provided at nominal 1.0 V (see Table 2 for actual recommended core
voltage). Voltage to the processor interface I/Os are provided through separate sets of supply pins and must
be provided at the voltages shown in Table 2. The input voltage threshold scales with respect to the
associated I/O supply voltage. OVDD and LVDD based receivers are simple CMOS I/O circuits and satisfy
appropriate LVCMOS type specifications. The DDR2 SDRAM interface uses a single-ended differential
receiver referenced the externally supplied MVREF signal (nominally set to GVDD/2) as is appropriate for
the SSTL2 electrical signaling standard.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Electrical Characteristics
2.1.3
Output Driver Characteristics
Table 3 provides information on the characteristics of the output driver strengths.
Table 3. Output Drive Capability
Driver Type
Local bus interface utilities signals
PCI signals
Programmable
Output Impedance
(Ω)
Supply
Voltage
25
35
BVDD = 3.3 V
BVDD = 2.5 V
45 (default)
45 (default)
125
BVDD = 3.3 V
BVDD = 2.5 V
BVDD = 1.8 V
25
OVDD = 3.3 V
2
Notes
1
42 (default)
DDR signal
20
GVDD = 2.5 V
—
DDR2 signal
16
32 (half strength mode)
GVDD = 1.8 V
—
TSEC signals
42
LVDD = 2.5/3.3 V
—
DUART, system control, JTAG
42
OVDD = 3.3 V
—
150
OVDD = 3.3 V
—
I
2C
Notes:
1. The drive strength of the local bus interface is determined by the configuration of the appropriate bits in PORIMPSCR.
2. The drive strength of the PCI interface is determined by the setting of the PCI_GNT1 signal at reset.
2.2
Power Sequencing
The device requires its power rails to be applied in specific sequence in order to ensure proper device
operation. These requirements are as follows for power up:
1. VDD, AVDD_n, BVDD, LVDD, SVDD, OVDD, TVDD, XVDD
2. GVDD
Note that all supplies must be at their stable values within 50 ms.
Items on the same line have no ordering requirement with respect to one another. Items on separate lines
must be ordered sequentially such that voltage rails on a previous step must reach 90% of their value before
the voltage rails on the current step reach 10% of theirs.
In order to guarantee MCKE low during power-up, the above sequencing for GVDD is required. If there is
no concern about any of the DDR signals being in an indeterminate state during power up, then the
sequencing for GVDD is not required.
From a system standpoint, if any of the I/O power supplies ramp prior to the VDD core supply, the I/Os
associated with that I/O supply may drive a logic one or zero during power-up, and extra current may be
drawn by the device.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Power Characteristics
3
Power Characteristics
The estimated typical core power dissipation for the core complex bus (CCB) versus the core frequency
for this family of PowerQUICC III devices is shown in Table 4.
Table 4. MPC8533E Core Power Dissipation
Power Mode
Core Frequency
(MHz)
Platform
Frequency (MHz)
VDD
(V)
Junction
Temperature (°C)
Power
(W)
Notes
667
333
1.0
65
2.6
1, 2
90
3.75
1, 3
5.85
1, 4
65
2.9
1, 2
90
4.0
1, 3
6.0
1, 4
65
3.6
1, 2
90
4.4
1, 3
6.2
1, 4
65
3.9
1, 2
90
5.0
1, 3
6.5
1, 4
Typical
Thermal
Maximum
Typical
800
400
1.0
Thermal
Maximum
Typical
1000
400
1.0
Thermal
Maximum
Typical
1067
Thermal
Maximum
533
1.0
Notes:
1. These values specify the power consumption at nominal voltage and apply to all valid processor bus frequencies and
configurations. The values do not include power dissipation for I/O supplies.
2. Typical power is an average value measured at the nominal recommended core voltage (V DD) and 65°C junction temperature
(see Table 2) while running the Dhrystone 2.1 benchmark.
3. Thermal power is the average power measured at nominal core voltage (V DD) and maximum operating junction temperature
(see Table 2) while running the Dhrystone 2.1 benchmark.
4. Maximum power is the maximum power measured at nominal core voltage (VDD) and maximum operating junction
temperature (see Table 2) while running a smoke test which includes an entirely L1-cache-resident, contrived sequence of
instructions which keep the execution unit maximally busy.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
13
Input Clocks
4
4.1
Input Clocks
System Clock Timing
Table 5 provides the system clock (SYSCLK) AC timing specifications for the MPC8533E.
Table 5. SYSCLK AC Timing Specifications
At recommended operating conditions (see Table 2) with OVDD = 3.3 V ± 165 mV.
Parameter/Condition
Symbol
Min
Typical
Max
Unit
Notes
SYSCLK frequency
fSYSCLK
33
—
133
MHz
1
SYSCLK cycle time
tSYSCLK
7.5
—
30.3
ns
—
SYSCLK rise and fall time
tKH, tKL
0.6
1.0
2.1
ns
2
tKHK/tSYSCLK
40
—
60
%
—
—
—
—
±150
ps
3, 4
SYSCLK duty cycle
SYSCLK jitter
Notes:
1. Caution: The CCB clock to SYSCLK ratio and e500 core to CCB clock ratio settings must be chosen such that the resulting
SYSCLK frequency, e500 (core) frequency, and CCB clock frequency do not exceed their respective maximum or minimum
operating frequencies. Refer to Section 19.2, “CCB/SYSCLK PLL Ratio,” and Section 19.3, “e500 Core PLL Ratio,” for ratio
settings.
2. Rise and fall times for SYSCLK are measured at 0.6 and 2.7 V.
3. This represents the total input jitter—short- and long-term.
4. The SYSCLK driver’s closed loop jitter bandwidth should be <500 kHz at –20 dB. The bandwidth must be set low to allow
cascade-connected PLL-based devices to track SYSCLK drivers with the specified jitter.
4.1.1
SYSCLK and Spread Spectrum Sources
Spread spectrum clock sources are an increasingly popular way to control electromagnetic interference
emissions (EMI) by spreading the emitted noise to a wider spectrum and reducing the peak noise
magnitude in order to meet industry and government requirements. These clock sources intentionally add
long-term jitter in order to diffuse the EMI spectral content. The jitter specification given in Table 5
considers short-term (cycle-to-cycle) jitter only and the clock generator’s cycle-to-cycle output jitter
should meet the MPC8533E input cycle-to-cycle jitter requirement. Frequency modulation and spread are
separate concerns, and the MPC8533E is compatible with spread spectrum sources if the recommendations
listed in Table 6 are observed.
Table 6. Spread Spectrum Clock Source Recommendations
At recommended operating conditions. See Table 2.
Parameter
Frequency modulation
Frequency spread
Min
Max
Unit
Notes
20
60
kHz
—
0
1.0
%
1
Note:
1. SYSCLK frequencies resulting from frequency spreading, and the resulting core and VCO frequencies, must meet the
minimum and maximum specifications given in Table 5.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
14
Freescale Semiconductor
Input Clocks
It is imperative to note that the processor’s minimum and maximum SYSCLK, core, and VCO frequencies
must not be exceeded regardless of the type of clock source. Therefore, systems in which the processor is
operated at its maximum rated e500 core frequency should avoid violating the stated limits by using
down-spreading only.
4.2
Real-Time Clock Timing
The RTC input is sampled by the platform clock (CCB clock). The output of the sampling latch is then
used as an input to the counters of the PIC and the TimeBase unit of the e500. There is no jitter
specification. The minimum pulse width of the RTC signal should be greater than 2 × the period of the
CCB clock. That is, minimum clock high time is 2 × tCCB, and minimum clock low time is 2 × tCCB. There
is no minimum RTC frequency; RTC may be grounded if not needed.
4.3
eTSEC Gigabit Reference Clock Timing
Table 7 provides the eTSEC gigabit reference clocks (EC_GTX_CLK125) AC timing specifications for
the MPC8533E.
Table 7. EC_GTX_CLK125 AC Timing Specifications
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Notes
EC_GTX_CLK125 frequency
fG125
—
125
—
MHz
—
EC_GTX_CLK125 cycle time
tG125
—
8
—
ns
—
EC_GTX_CLK rise and fall time
LVDD, TVDD = 2.5 V
LVDD, TVDD = 3.3 V
tG125R/tG125F
—
—
ns
1
EC_GTX_CLK125 duty cycle
tG125H/tG125
%
2
0.75
1.0
GMII, TBI
1000Base-T for RGMII, RTBI
—
45
47
55
53
Notes:
1. Rise and fall times for EC_GTX_CLK125 are measured from 0.5 and 2.0 V for L/TVDD = 2.5 V, and from 0.6 and 2.7 V for
L/TVDD = 3.3 V.
2. EC_GTX_CLK125 is used to generate the GTX clock for the eTSEC transmitter with 2% degradation. EC_GTX_CLK125
duty cycle can be loosened from 47%/53% as long as the PHY device can tolerate the duty cycle generated by the eTSEC
GTX_CLK. See Section 8.5.4, “RGMII and RTBI AC Timing Specifications,” for duty cycle for 10Base-T and 100Base-T
reference clock.
4.4
Platform to FIFO Restrictions
Please note the following FIFO maximum speed restrictions based on platform speed.
For FIFO GMII mode:
FIFO TX/RX clock frequency ≤ platform clock frequency ÷ 4.2
For example, if the platform frequency is 533 MHz, the FIFO Tx/Rx clock frequency should be no more
than 127 MHz.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
15
RESET Initialization
For FIFO encoded mode:
FIFO TX/RX clock frequency ≤ platform clock frequency ÷ 3.2
For example, if the platform frequency is 533 MHz, the FIFO Tx/Rx clock frequency should be no more
than 167 MHz.
4.5
Other Input Clocks
For information on the input clocks of other functional blocks of the platform such as SerDes, and eTSEC,
see the specific section of this document.
5
RESET Initialization
This section describes the AC electrical specifications for the RESET initialization timing requirements of
the MPC8533E. Table 8 provides the RESET initialization AC timing specifications for the DDR
SDRAM component(s).
Table 8. RESET Initialization Timing Specifications1
Parameter/Condition
Min
Max
Unit
Notes
100
—
μs
—
3
—
SYSCLKs
1
100
—
μs
—
Input setup time for POR configs (other than PLL config) with
respect to negation of HRESET
4
—
SYSCLKs
1
Input hold time for all POR configs (including PLL config) with
respect to negation of HRESET
2
—
SYSCLKs
1
Maximum valid-to-high impedance time for actively driven POR
configs with respect to negation of HRESET
—
5
SYSCLKs
1
Required assertion time of HREST
Minimum assertion time for SRESET
PLL input setup time with stable SYSCLK before HRESET
negation
Note:
1. SYSCLK is the primary clock input for the MPC8533E.
Table 9 provides the PLL lock times.
Table 9. PLL Lock Times
Parameter/Condition
Min
Max
Unit
Notes
Core and platform PLL lock times
—
100
μs
—
Local bus PLL
—
50
μs
—
PCI bus lock time
—
50
μs
—
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
16
Freescale Semiconductor
DDR and DDR2 SDRAM
6
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8533E. Note that DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.
6.1
DDR SDRAM DC Electrical Characteristics
Table 10 provides the recommended operating conditions for the DDR SDRAM component(s) of the
MPC8533E when GVDD(typ) = 1.8 V.
Table 10. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.71
1.89
V
1
I/O reference voltage
MVREF
0.49 × GVDD
0.51 × GVDD
V
2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.26
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.24
V
—
Output leakage current
IOZ
–50
50
μA
4
Output high current (VOUT = 1.26 V)
IOH
–13.4
—
mA
—
Output low current (VOUT = 0.33 V)
IOL
13.4
—
mA
—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MV REF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MV REF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ GVDD.
Table 11 provides the DDR2 I/O capacitance when GVDD(typ) = 1.8 V.
Table 11. DDR2 SDRAM Capacitance for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
6
8
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—
0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
17
DDR and DDR2 SDRAM
Table 12 provides the recommended operating conditions for the DDR SDRAM component(s) when
GVDD(typ) = 2.5 V.
Table 12. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49 × GVDD
0.51 × GVDD
V
2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.31
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.3
V
—
Output leakage current
IOZ
–50
50
μA
4
Output high current (VOUT = 1.8 V)
IOH
–16.2
—
mA
—
Output low current (VOUT = 0.42 V)
IOL
16.2
—
mA
—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MV REF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MV REF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ GVDD.
Table 13 provides the DDR I/O capacitance when GVDD(typ) = 2.5 V.
Table 13. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS
CIO
6
8
pF
1
Delta input/output capacitance: DQ, DQS
CDIO
—
0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 14 provides the current draw characteristics for MVREF.
Table 14. Current Draw Characteristics for MVREF
Parameter/Condition
Current draw for MVREF
Symbol
Min
Max
Unit
Notes
IMVREF
—
500
μA
1
Note:
1. The voltage regulator for MVREF must be able to supply up to 500 μA current.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
18
Freescale Semiconductor
DDR and DDR2 SDRAM
6.2
DDR SDRAM AC Electrical Characteristics
This section provides the AC electrical characteristics for the DDR SDRAM interface.
6.2.1
DDR SDRAM Input AC Timing Specifications
Table 15 provides the input AC timing specifications for the DDR SDRAM when GVDD(typ) = 1.8 V.
Table 15. DDR2 SDRAM Input AC Timing Specifications for 1.8-V Interface
At recommended operating conditions.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—
MVREF – 0.25
V
—
AC input high voltage
VIH
MVREF + 0.25
—
V
—
Table 16 provides the input AC timing specifications for the DDR SDRAM when GVDD(typ) = 2.5 V.
Table 16. DDR SDRAM Input AC Timing Specifications for 2.5-V Interface
At recommended operating conditions.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—
MVREF – 0.31
V
—
AC input high voltage
VIH
MVREF + 0.31
—
V
—
Unit
Notes
ps
1, 2
Table 17 provides the input AC timing specifications for the DDR SDRAM interface.
Table 17. DDR SDRAM Input AC Timing Specifications
At recommended operating conditions.
Parameter
Symbol
Controller skew for MDQS—MDQ/MECC/MDM
Min
Max
tCISKEW
533 MHz
–300
300
3
400 MHz
–365
365
—
333 MHz
–390
390
—
Notes:
1. tCISKEW represents the total amount of skew consumed by the controller between MDQS[n] and any corresponding bit that
will be captured with MDQS[n]. This should be subtracted from the total timing budget.
2. The amount of skew that can be tolerated from MDQS to a corresponding MDQ signal is called tDISKEW. This can be
determined by the following equation: tDISKEW = ± (T/4 – abs(tCISKEW)), where T is the clock period and abs(tCISKEW) is the
absolute value of tCISKEW. See Figure 3.
3. Maximum DDR1 frequency is 400 MHz.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
19
DDR and DDR2 SDRAM
Figure 3 shows the DDR SDRAM input timing diagram.
MCK[n]
MCK[n]
tMCK
MDQS[n]
MDQ[x]
D0
D1
tDISKEW
tDISKEW
Figure 3. DDR SDRAM Input Timing Diagram (tDISKEW)
6.2.2
DDR SDRAM Output AC Timing Specifications
Table 18 provides the output AC timing specifications for the DDR SDRAM interface.
Table 18. DDR SDRAM Output AC Timing Specifications
At recommended operating conditions.
Parameter
MCK[n] cycle time, MCK[n]/MCK[n] crossing
ADDR/CMD output setup with respect to MCK
Symbol1
Min
Max
Unit
Notes
tMCK
3.75
6
ns
2
ns
3
tDDKHAS
1.48
1.95
2.40
533 MHz
400 MHz
333 MHz
ADDR/CMD output hold with respect to MCK
tDDKHAX
—
—
—
tDDKHMH
ns
1.48
1.95
2.40
—
—
—
–0.6
0.6
3
7
—
—
tDDKHCX
533 MHz
400 MHz
333 MHz
MCK to MDQS Skew
ns
1.48
1.95
2.40
3
7
—
—
—
—
—
tDDKHCS
533 MHz
400 MHz
333 MHz
MCS[n] output hold with respect to MCK
ns
1.48
1.95
2.40
533 MHz
400 MHz
333 MHz
MCS[n] output setup with respect to MCK
7
—
—
—
3
7
—
—
ns
4
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
20
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 18. DDR SDRAM Output AC Timing Specifications (continued)
At recommended operating conditions.
Parameter
Symbol1
MDQ/MECC/MDM output setup with respect
to MDQS
tDDKHDS,
tDDKLDS
538
700
900
533 MHz
400 MHz
333 MHz
MDQ/MECC/MDM output hold with respect to
MDQS
Min
Max
Notes
ps
5
7
—
—
—
—
—
tDDKHDX,
tDDKLDX
533 MHz
400 MHz
333 MHz
Unit
ps
538
700
900
—
—
—
5
7
—
—
MDQS preamble
tDDKHMP
0.75 x tMCK
—
ns
6
MDQS postamble
tDDKHME
0.4 x tMCK
0.6 x tMCK
ns
6
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until
outputs (A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock
reference (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing
(DD) from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through
control of the DQSS override bits in the TIMING_CFG_2 register. This will typically be set to the same delay as the clock
adjust in the CLK_CNTL register. The timing parameters listed in the table assume that these two parameters have been
set to the same adjustment value. See the MPC8533E PowerQUICC III Integrated Communications Processor Reference
Manual, for a description and understanding of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
7. Maximum DDR1 frequency is 400 MHz.
NOTE
For the ADDR/CMD setup and hold specifications in Table 18, it is
assumed that the clock control register is set to adjust the memory clocks by
½ applied cycle.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
21
DDR and DDR2 SDRAM
Figure 4 shows the DDR SDRAM output timing for the MCK to MDQS skew measurement (tDDKHMH).
MCK[n]
MCK[n]
tMCK
tDDKHMH(max) = 0.6 ns
MDQS
tDDKHMH(min) = –0.6 ns
MDQS
Figure 4. Timing Diagram for tDDKHMH
Figure 5 shows the DDR SDRAM output timing diagram.
MCK
MCK
tMCK
tDDKHAS, tDDKHCS
tDDKHAX, tDDKHCX
ADDR/CMD
Write A0
NOOP
tDDKHMP
tDDKHMH
MDQS[n]
tDDKHME
tDDKHDS
tDDKLDS
MDQ[x]
D0
D1
tDDKLDX
tDDKHDX
Figure 5. DDR and DDR2 SDRAM Output Timing Diagram
Figure 6 provides the AC test load for the DDR bus.
Output
Z0 = 50 Ω
RL = 50 Ω
GVDD/2
Figure 6. DDR AC Test Load
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
22
Freescale Semiconductor
DUART
7
DUART
This section describes the DC and AC electrical specifications for the DUART interface of the
MPC8533E.
7.1
DUART DC Electrical Characteristics
Table 19 provides the DC electrical characteristics for the DUART interface.
Table 19. DUART DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
Notes
High-level input voltage
VIH
2
OVDD + 0.3
V
—
Low-level input voltage
VIL
–0.3
0.8
V
—
Input current (V IN = 0 V or VIN = VDD)
IIN
—
±5
μA
1
High-level output voltage (OVDD = min, IOH = –2 mA)
VOH
2.4
—
V
—
Low-level output voltage (OVDD = min, IOL = 2 mA)
VOL
—
0.4
V
—
Value
Unit
Notes
Minimum baud rate
CCB clock/1,048,576
baud
1
Maximum baud rate
CCB clock/16
baud
2
16
—
3
Note:
1. Note that the symbol VIN, in this case, represents the OV IN symbol referenced in Table 1 and Table 2.
7.2
DUART AC Electrical Specifications
Table 20 provides the AC timing parameters for the DUART interface.
Table 20. DUART AC Timing Specifications
Parameter
Oversample rate
Notes:
1. CCB clock refers to the platform clock.
2. Actual attainable baud rate will be limited by the latency of interrupt processing.
3. The middle of a start bit is detected as the eighth sampled 0 after the 1-to-0 transition of the start bit. Subsequent bit values
are sampled each sixteenth sample.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
23
Enhanced Three-Speed Ethernet (eTSEC), MII Management
8
Enhanced Three-Speed Ethernet (eTSEC),
MII Management
This section provides the AC and DC electrical characteristics for enhanced three-speed and MII
management.
8.1
Enhanced Three-Speed Ethernet Controller (eTSEC)
(10/100/1000 Mbps)—GMII/MII/TBI/RGMII/RTBI/RMII/FIFO
Electrical Characteristics
The electrical characteristics specified here apply to all gigabit media independent interface (GMII), 8-bit
FIFO interface (FIFO), media independent interface (MII), ten-bit interface (TBI), reduced gigabit media
independent interface (RGMII), reduced ten-bit interface (RTBI), and reduced media independent
interface (RMII) signals except management data input/output (MDIO) and management data clock
(MDC). The 8-bit FIFO interface can operate at 3.3 or 2.5 V. The RGMII and RTBI interfaces are defined
for 2.5 V, while the MII, GMII, TBI, and RMII interfaces can be operated at 3.3 or 2.5 V. Whether the
GMII, MII, or TBI interface is operated at 3.3 or 2.5 V, the timing is compliant with IEEE 802.3. The
RGMII and RTBI interfaces follow the Reduced Gigabit Media-Independent Interface (RGMII)
Specification Version 1.3 (12/10/2000). The RMII interface follows the RMII Consortium RMII
Specification Version 1.2 (3/20/1998). The electrical characteristics for MDIO and MDC are specified in
Section 9, “Ethernet Management Interface Electrical Characteristics.”
8.2
eTSEC DC Electrical Characteristics
All GMII, MII, TBI, RGMII, RTBI, RMII, and FIFO drivers and receivers comply with the DC parametric
attributes specified in Table 21 and Table 22. The potential applied to the input of a GMII, MII, TBI, RTBI,
RMII, and FIFO receiver may exceed the potential of the receiver’s power supply (that is, a GMII driver
powered from a 3.6-V supply driving VOH into a GMII receiver powered from a 2.5-V supply). Tolerance
for dissimilar GMII driver and receiver supply potentials is implicit in these specifications. The RGMII
and RTBI signals are based on a 2.5-V CMOS interface voltage as defined by JEDEC EIA/JESD8-5.
Table 21. GMII, MII, TBI, RMII and FIFO DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
Notes
LVDD
TVDD
3.135
3.465
V
1, 2
Output high voltage (LVDD/TVDD = Min, IOH = –4.0 mA)
VOH
2.4
—
V
—
Output low voltage (LV DD/TVDD = Min, IOL = 4.0 mA)
VOL
—
0.5
V
—
Input high voltage
VIH
1.95
—
V
—
Input low voltage
VIL
—
0.90
V
—
Input high current (VIN = LVDD, VIN = TVDD)
IIH
—
40
μA
1, 2, 3
Supply voltage 3.3 V
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
24
Freescale Semiconductor
Enhanced Three-Speed Ethernet (eTSEC), MII Management
Table 21. GMII, MII, TBI, RMII and FIFO DC Electrical Characteristics (continued)
Parameter
Input low current (V IN = GND)
Symbol
Min
Max
Unit
Notes
IIL
–600
—
μA
3
Notes:
1. LVDD supports eTSEC1.
2. TVDD supports eTSEC3.
3. The symbol VIN, in this case, represents the LVIN and TVIN symbols referenced in Table 1 and Table 2.
Table 22. GMII, MII, RMII, RGMII, RTBI, TBI, and FIFO DC Electrical Characteristics
Parameters
Symbol
Min
Max
Unit
Notes
LVDD/TVDD
2.375
2.625
V
1, 2
Output high voltage (LVDD/TVDD = Min, IOH = –1.0 mA)
VOH
2.0
—
V
—
Output low voltage (LV DD/TVDD = Min, IOL = 1.0 mA)
VOL
—
0.4
V
—
Input high voltage
VIH
1.70
—
V
—
Input low voltage
VIL
—
0.7
V
—
Input current (V IN = 0, VIN = LVDD, VIN = TVDD)
IIN
—
±15
μA
1, 2, 3
Supply voltage 2.5 V
Notes:
1. LVDD supports eTSEC1.
2. TVDD supports eTSEC3.
3. The symbol VIN, in this case, represents the LVIN and TVIN symbols referenced in Table 1 and Table 2.
8.3
FIFO, GMII,MII, TBI, RGMII, RMII, and RTBI AC Timing
Specifications
The AC timing specifications for FIFO, GMII, MII, TBI, RGMII, RMII, and RTBI are presented in this
section.
8.3.1
FIFO AC Specifications
The basis for the AC specifications for the eTSEC FIFO modes is the double data rate RGMII and RTBI
specifications, since they have similar performance and are described in a source-synchronous fashion like
FIFO modes. However, the FIFO interface provides deliberate skew between the transmitted data and
source clock in GMII fashion.
When the eTSEC is configured for FIFO modes, all clocks are supplied from external sources to the
relevant eTSEC interface. That is, the transmit clock must be applied to the eTSECn TSECn_TX_CLK,
while the receive clock must be applied to pin TSECn_RX_CLK. The eTSEC internally uses the transmit
clock to synchronously generate transmit data and outputs an echoed copy of the transmit clock back out
onto the TSECn_GTX_CLK pin (while transmit data appears on TSECn_TXD[7:0], for example). It is
intended that external receivers capture eTSEC transmit data using the clock on TSECn_GTX_CLK as a
source-synchronous timing reference. Typically, the clock edge that launched the data can be used, since
the clock is delayed by the eTSEC to allow acceptable set-up margin at the receiver.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
A summary of the FIFO AC specifications appears in Table 23 and Table 24.
Table 23. FIFO Mode Transmit AC Timing Specification
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Notes
TX_CLK, GTX_CLK clock period
tFIT
—
8.0
—
ns
—
TX_CLK, GTX_CLK duty cycle
tFITH
45
50
55
%
—
TX_CLK, GTX_CLK peak-to-peak jitter
tFITJ
—
—
250
ps
—
Rise time TX_CLK (20%–80%)
tFITR
—
—
0.75
ns
—
Fall time TX_CLK (80%–20%)
tFITF
—
—
0.75
ns
—
GTX_CLK to FIFO data TXD[7:0], TX_ER, TX_EN
hold time
tFITDX
0.5
—
3.0
ns
1
Note:
1. Data valid tFITDV to GTX_CLK Min setup time is a function of clock period and max hold time.
(Min setup = Cycle time – Max hold).
Table 24. FIFO Mode Receive AC Timing Specification
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Notes
tFIR
—
8.0
—
ns
—
tFIRH/tFIRH
45
50
55
%
—
RX_CLK peak-to-peak jitter
tFIRJ
—
—
250
ps
—
Rise time RX_CLK (20%–80%)
tFIRR
—
—
0.75
ns
—
Fall time RX_CLK (80%–20%)
tFIRF
—
—
0.75
ns
—
RXD[7:0], RX_DV, RX_ER setup time to RX_CLK
tFIRDV
1.5
—
—
ns
—
RX_CLK to RXD[7:0], RX_DV, RX_ER hold time
tFIRDX
0.5
—
—
ns
—
RX_CLK clock period
RX_CLK duty cycle
Timing diagrams for FIFO appear in Figure 7 and Figure 8.
tFITF
tFIT
tFITR
GTX_CLK
tFITH
tFITDV
tFITDX
TXD[7:0]
TX_EN
TX_ER
Figure 7. FIFO Transmit AC Timing Diagram
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
tFIRR
tFIR
RX_CLK
tFIRH
tFIRF
RXD[7:0]
RX_DV
RX_ER
Valid Data
tFIRDX
tFIRDV
Figure 8. FIFO Receive AC Timing Diagram
8.3.2
GMII AC Timing Specifications
This section describes the GMII transmit and receive AC timing specifications.
8.3.2.1
GMII Transmit AC Timing Specifications
Table 25 provides the GMII transmit AC timing specifications.
Table 25. GMII Transmit AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%
Symbol1
Min
Typ
Max
Unit
Notes
tGTX
—
8.0
—
ns
—
tGTKHDX
0.2
—
5.0
ns
2
GTX_CLK data clock rise time (20%-80%)
tGTXR
—
—
1.0
ns
—
GTX_CLK data clock fall time (80%-20%)
tGTXF
—
—
1.0
ns
—
Parameter/Condition
GTX_CLK clock period
GTX_CLK to GMII data TXD[7:0], TX_ER, TX_EN delay
Notes:
1. The symbols used for timing specifications follow the pattern t(first two letters of functional block)(signal)(state)(reference)(state) for inputs
and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tGTKHDV symbolizes GMII transmit timing
(GT) with respect to the tGTX clock reference (K) going to the high state (H) relative to the time date input signals (D) reaching
the valid state (V) to state or setup time. Also, tGTKHDX symbolizes GMII transmit timing (GT) with respect to the tGTX clock
reference (K) going to the high state (H) relative to the time date input signals (D) going invalid (X) or hold time. Note that, in
general, the clock reference symbol representation is based on three letters representing the clock of a particular functional.
For example, the subscript of tGTX represents the GMII(G) transmit (TX) clock. For rise and fall times, the latter convention
is used with the appropriate letter: R (rise) or F (fall).
2. Data valid tGTKHDV to GTX_CLK Min setup time is a function of clock period and max hold time (Min setup = cycle time –
Max delay).
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
Figure 9 shows the GMII transmit AC timing diagram.
tGTXR
tGTX
GTX_CLK
tGTXH
tGTXF
TXD[7:0]
TX_EN
TX_ER
tGTKHDX
tGTKHDV
Figure 9. GMII Transmit AC Timing Diagram
8.3.2.2
GMII Receive AC Timing Specifications
Table 26 provides the GMII receive AC timing specifications.
Table 26. GMII Receive AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%
Symbol1
Min
Typ
Max
Unit
Notes
tGRX
—
8.0
—
ns
—
tGRXH/tGRX
35
—
65
%
—
RXD[7:0], RX_DV, RX_ER setup time to RX_CLK
tGRDVKH
2.0
—
—
ns
—
RX_CLK to RXD[7:0], RX_DV, RX_ER hold time
tGRDXKH
0.5
—
—
ns
—
RX_CLK clock rise (20%–80%)
tGRXR
—
—
1.0
ns
—
RX_CLK clock fall time (80%–20%)
tGRXF
—
—
1.0
ns
—
Parameter/Condition
RX_CLK clock period
RX_CLK duty cycle
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tGRDVKH symbolizes GMII receive
timing (GR) with respect to the time data input signals (D) reaching the valid state (V) relative to the tRX clock reference (K)
going to the high state (H) or setup time. Also, tGRDXKL symbolizes GMII receive timing (GR) with respect to the time data
input signals (D) went invalid (X) relative to the tGRX clock reference (K) going to the low (L) state or hold time. Note that, in
general, the clock reference symbol representation is based on three letters representing the clock of a particular functional.
For example, the subscript of tGRX represents the GMII (G) receive (RX) clock. For rise and fall times, the latter convention
is used with the appropriate letter: R (rise) or F (fall).
Figure 10 provides the AC test load for eTSEC.
Output
Z0 = 50 Ω
RL = 50 Ω
LVDD/2
Figure 10. eTSEC AC Test Load
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
Figure 11 shows the GMII receive AC timing diagram.
tGRX
tGRXR
RX_CLK
tGRXF
tGRXH
RXD[7:0]
RX_DV
RX_ER
tGRDXKH
tGRDVKH
Figure 11. GMII Receive AC Timing Diagram
8.4
MII AC Timing Specifications
This section describes the MII transmit and receive AC timing specifications.
8.4.1
MII Transmit AC Timing Specifications
Table 27 provides the MII transmit AC timing specifications.
Table 27. MII Transmit AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%
Symbol1
Min
Typ
Max
Unit
Notes
TX_CLK clock period 10 Mbps
tMTX
—
400
—
ns
—
TX_CLK clock period 100 Mbps
tMTX
—
40
—
ns
—
tMTXH/tMTX
35
—
65
%
—
tMTKHDX
1
5
15
ns
—
TX_CLK data clock rise (20%–80%)
tMTXR
1.0
—
4.0
ns
—
TX_CLK data clock fall (80%–20%)
tMTXF
1.0
—
4.0
ns
—
Parameter/Condition
TX_CLK duty cycle
TX_CLK to MII data TXD[3:0], TX_ER, TX_EN
delay
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMTKHDX symbolizes MII transmit
timing (MT) for the time tMTX clock reference (K) going high (H) until data outputs (D) are invalid (X). Note that, in general,
the clock reference symbol representation is based on two to three letters representing the clock of a particular functional.
For example, the subscript of tMTX represents the MII(M) transmit (TX) clock. For rise and fall times, the latter convention is
used with the appropriate letter: R (rise) or F (fall).
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
Figure 12 shows the MII transmit AC timing diagram.
tMTX
tMTXR
TX_CLK
tMTXF
tMTXH
TXD[3:0]
TX_EN
TX_ER
tMTKHDX
Figure 12. MII Transmit AC Timing Diagram
8.4.2
MII Receive AC Timing Specifications
Table 28 provides the MII receive AC timing specifications.
Table 28. MII Receive AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5%.or 2.5 V ± 5%.
Symbol1
Min
Typ
Max
Unit
Notes
RX_CLK clock period 10 Mbps
tMRX
—
400
—
ns
—
RX_CLK clock period 100 Mbps
tMRX
—
40
—
ns
—
tMRXH/tMRX
35
—
65
%
—
RXD[3:0], RX_DV, RX_ER setup time to RX_CLK
tMRDVKH
10.0
—
—
ns
—
RXD[3:0], RX_DV, RX_ER hold time to RX_CLK
tMRDXKH
10.0
—
—
ns
—
RX_CLK clock rise (20%–80%)
tMRXR
1.0
—
4.0
ns
—
RX_CLK clock fall time (80%–20%)
tMRXF
1.0
—
4.0
ns
—
Parameter/Condition
RX_CLK duty cycle
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMRDVKH symbolizes MII receive
timing (MR) with respect to the time data input signals (D) reach the valid state (V) relative to the tMRX clock reference (K)
going to the high (H) state or setup time. Also, tMRDXKL symbolizes MII receive timing (GR) with respect to the time data input
signals (D) went invalid (X) relative to the tMRX clock reference (K) going to the low (L) state or hold time. Note that, in general,
the clock reference symbol representation is based on three letters representing the clock of a particular functional. For
example, the subscript of tMRX represents the MII (M) receive (RX) clock. For rise and fall times, the latter convention is used
with the appropriate letter: R (rise) or F (fall).
Figure 13 provides the AC test load for eTSEC.
Output
Z0 = 50 Ω
RL = 50 Ω
LVDD/2
Figure 13. eTSEC AC Test Load
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Enhanced Three-Speed Ethernet (eTSEC), MII Management
Figure 14 shows the MII receive AC timing diagram.
tMRX
tMRXR
RX_CLK
tMRXF
tMRXH
RXD[3:0]
RX_DV
RX_ER
Valid Data
tMRDVKH
tMRDXKL
Figure 14. MII Receive AC Timing Diagram
8.5
TBI AC Timing Specifications
This section describes the TBI transmit and receive AC timing specifications.
8.5.1
TBI Transmit AC Timing Specifications
Table 29 provides the TBI transmit AC timing specifications.
Table 29. TBI Transmit AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%..
Symbol1
Min
Typ
Max
Unit
Notes
tGTX
—
8.0
—
ns
—
tTTKHDX
0.2
—
5.0
ns
2
GTX_CLK rise (20%–80%)
tTTXR
—
—
1.0
ns
—
GTX_CLK fall time (80%–20%)
tTTXF
—
—
1.0
ns
—
Parameter/Condition
GTX_CLK clock period
GTX_CLK to TCG[9:0] delay time
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state )(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tTTKHDV symbolizes the TBI
transmit timing (TT) with respect to the time from tTTX (K) going high (H) until the referenced data signals (D) reach the valid
state (V) or setup time. Also, tTTKHDX symbolizes the TBI transmit timing (TT) with respect to the time from tTTX (K) going
high (H) until the referenced data signals (D) reach the invalid state (X) or hold time. Note that, in general, the clock reference
symbol representation is based on three letters representing the clock of a particular functional. For example, the subscript
of tTTX represents the TBI (T) transmit (TX) clock. For rise and fall times, the latter convention is used with the appropriate
letter: R (rise) or F (fall).
2. Data valid tTTKHDV to GTX_CLK Min setup time is a function of clock period and max hold time (Min setup = cycle time –
Max delay).
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
Figure 15 shows the TBI transmit AC timing diagram.
tTTXR
tTTX
GTX_CLK
tTTXH
tTTXF
TCG[9:0]
tTTKHDV
tTTKHDX
Figure 15. TBI Transmit AC Timing Diagram
8.5.2
TBI Receive AC Timing Specifications
Table 30 provides the TBI receive AC timing specifications.
Table 30. TBI Receive AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%.
Symbol1
Min
Typ
Max
Unit
Notes
tTRX
—
16.0
—
ns
—
tSKTRX
7.5
—
8.5
ns
—
tTRXH/tTRX
40
—
60
%
—
RCG[9:0] setup time to rising PMA_RX_CLK
tTRDVKH
2.5
—
—
ns
—
PMA_RX_CLK to RCG[9:0] hold time
tTRDXKH
1.5
—
—
ns
—
PMA_RX_CLK[0:1] clock rise time (20%-80%)
tTRXR
0.7
—
2.4
ns
—
PMA_RX_CLK[0:1] clock fall time (80%-20%)
tTRXF
0.7
—
2.4
ns
—
Parameter/Condition
PMA_RX_CLK[0:1] clock period
PMA_RX_CLK[0:1] skew
PMA_RX_CLK[0:1] duty cycle
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tTRDVKH symbolizes TBI receive
timing (TR) with respect to the time data input signals (D) reach the valid state (V) relative to the tTRX clock reference (K)
going to the high (H) state or setup time. Also, tTRDXKH symbolizes TBI receive timing (TR) with respect to the time data input
signals (D) went invalid (X) relative to the tTRX clock reference (K) going to the high (H) state. Note that, in general, the clock
reference symbol representation is based on three letters representing the clock of a particular functional. For example, the
subscript of tTRX represents the TBI (T) receive (RX) clock. For rise and fall times, the latter convention is used with the
appropriate letter: R (rise) or F (fall). For symbols representing skews, the subscript is skew (SK) followed by the clock that
is being skewed (TRX).
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
Figure 16 shows the TBI receive AC timing diagram.
tTRX
tTRXR
PMA_RX_CLK1
tTRXH
tTRXF
Valid Data
RCG[9:0]
Valid Data
tTRDVKH
tSKTRX
tTRDXKH
PMA_RX_CLK0
tTRXH
tTRDXKH
tTRDVKH
Figure 16. TBI Receive AC Timing Diagram
8.5.3
TBI Single-Clock Mode AC Specifications
When the eTSEC is configured for TBI modes, all clocks are supplied from external sources to the relevant
eTSEC interface. In single-clock TBI mode, when TBICON[CLKSEL] = 1, a 125-MHz TBI receive clock
is supplied on the TSECn_RX_CLK pin (no receive clock is used on TSECn_TX_CLK in this mode,
whereas for the dual-clock mode this is the PMA1 receive clock). The 125-MHz transmit clock is applied
on the TSEC_GTX_CLK125 pin in all TBI modes.
A summary of the single-clock TBI mode AC specifications for receive appears in Table 31.
Table 31. TBI Single-Clock Mode Receive AC Timing Specification
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Notes
RX_CLK clock period
tTRR
7.5
8.0
8.5
ns
—
RX_CLK duty cycle
tTRRH
40
50
60
%
—
RX_CLK peak-to-peak jitter
tTRRJ
—
—
250
ps
—
Rise time RX_CLK (20%–80%)
tTRRR
—
—
1.0
ns
—
Fall time RX_CLK (80%–20%)
tTRRF
—
—
1.0
ns
—
RCG[9:0] setup time to RX_CLK rising edge
tTRRDV
2.0
—
—
ns
—
RCG[9:0] hold time to RX_CLK rising edge
tTRRDX
1.0
—
—
ns
—
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
A timing diagram for TBI receive appears in Figure 17.
.
tTRR
tTRRR
RX_CLK
tTRRF
tTRRH
RCG[9:0]
Valid Data
tTRRDV
tTRRDX
Figure 17. TBI Single-Clock Mode Receive AC Timing Diagram
8.5.4
RGMII and RTBI AC Timing Specifications
Table 32 presents the RGMII and RTBI AC timing specifications.
Table 32. RGMII and RTBI AC Timing Specifications
At recommended operating conditions with L/TVDD of 2.5 V ± 5%.
Symbol1
Min
Typ
Max
Unit
Notes
Data to clock output skew (at transmitter)
tSKRGT_TX
–500
0
500
ps
5
Data to clock input skew (at receiver)
tSKRGT_RX
1.0
—
2.8
ns
2
tRGT
7.2
8.0
8.8
ns
3
tRGTH/tRGT
40
50
60
%
3, 4
Rise time (20%–80%)
tRGTR
—
—
0.75
ns
Fall time (20%–80%)
tRGTF
—
—
0.75
ns
Parameter/Condition
Clock period duration
Duty cycle for 10BASE-T and 100BASE-TX
Notes:
1. In general, the clock reference symbol representation for this section is based on the symbols RGT to represent RGMII and
RTBI timing. For example, the subscript of tRGT represents the TBI (T) receive (RX) clock. Note also that the notation for rise
(R) and fall (F) times follows the clock symbol that is being represented. For symbols representing skews, the subscript is
skew (SK) followed by the clock that is being skewed (RGT).
2. This implies that PC board design will require clocks to be routed such that an additional trace delay of greater than 1.5 ns
will be added to the associated clock signal.
3. For 10 and 100 Mbps, tRGT scales to 400 ns ± 40 ns and 40 ns ± 4 ns, respectively.
4. Duty cycle may be stretched/shrunk during speed changes or while transitioning to a received packet's clock domains as
long as the minimum duty cycle is not violated and stretching occurs for no more than three tRGT of the lowest speed
transitioned between.
5. Guaranteed by design.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
Figure 18 shows the RGMII and RTBI AC timing and multiplexing diagrams.
tRGT
tRGTH
GTX_CLK
(At Transmitter)
tSKRGT_TX
TXD[8:5][3:0]
TXD[7:4][3:0]
TXD[8:5]
TXD[3:0] TXD[7:4]
TXD[4]
TXEN
TX_CTL
TXD[9]
TXERR
tSKRGT_RX
TX_CLK
(At PHY)
tRGT
tRGTH
GTX_CLK
(At Receiver)
RXD[8:5][3:0]
RXD[7:4][3:0]
RXD[8:5]
RXD[3:0] RXD[7:4]
tSKRGT_TX
RXD[4]
RXDV
RX_CTL
RXD[9]
RXERR
tSKRGT_RX
RX_CLK
(At PHY)
Figure 18. RGMII and RTBI AC Timing and Multiplexing Diagrams
8.5.5
RMII AC Timing Specifications
This section describes the RMII transmit and receive AC timing specifications.
8.5.5.1
RMII Transmit AC Timing Specifications
The RMII transmit AC timing specifications are in Table 33.
Table 33. RMII Transmit AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%.
Symbol1
Min
Typ
Max
Unit
Notes
REF_CLK clock period
tRMT
15.0
20.0
25.0
ns
—
REF_CLK duty cycle
tRMTH
35
50
65
%
—
REF_CLK peak-to-peak jitter
tRMTJ
—
—
250
ps
—
Rise time REF_CLK (20%–80%)
tRMTR
1.0
—
2.0
ns
—
Fall time REF_CLK (80%–20%)
tRMTF
1.0
—
2.0
ns
—
Parameter/Condition
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Enhanced Three-Speed Ethernet (eTSEC), MII Management
Table 33. RMII Transmit AC Timing Specifications (continued)
At recommended operating conditions with L/TVDD of 3.3 V ± 5% or 2.5 V ± 5%.
Parameter/Condition
REF_CLK to RMII data TXD[1:0], TX_EN delay
Symbol1
Min
Typ
Max
Unit
Notes
tRMTDX
1.0
—
10.0
ns
—
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMTKHDX symbolizes MII transmit
timing (MT) for the time tMTX clock reference (K) going high (H) until data outputs (D) are invalid (X). Note that, in general,
the clock reference symbol representation is based on two to three letters representing the clock of a particular functional.
For example, the subscript of tMTX represents the MII(M) transmit (TX) clock. For rise and fall times, the latter convention is
used with the appropriate letter: R (rise) or F (fall).
Figure 19 shows the RMII transmit AC timing diagram.
tRMTR
tRMT
REF_CLK
tRMTF
tRMTH
TXD[1:0]
TX_EN
TX_ER
tRMTDX
Figure 19. RMII Transmit AC Timing Diagram
8.5.5.2
RMII Receive AC Timing Specifications
Table 34 shows the RMII receive AC timing specifications.
Table 34. RMII Receive AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5%.or 2.5 V ± 5%.
Symbol1
Min
Typ
Max
Unit
Notes
tRMR
15.0
20.0
25.0
ns
—
REF_CLK duty cycle
tRMRH
35
50
65
%
—
REF_CLK peak-to-peak jitter
tRMRJ
—
—
250
ps
—
Rise time REF_CLK (20%–80%)
tRMRR
1.0
—
2.0
ns
—
Fall time REF_CLK (80%–20%)
tRMRF
1.0
—
2.0
ns
—
RXD[1:0], CRS_DV, RX_ER setup time to
REF_CLK rising edge
tRMRDV
4.0
—
—
ns
—
Parameter/Condition
REF_CLK clock period
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
36
Freescale Semiconductor
Enhanced Three-Speed Ethernet (eTSEC), MII Management
Table 34. RMII Receive AC Timing Specifications (continued)
At recommended operating conditions with L/TVDD of 3.3 V ± 5%.or 2.5 V ± 5%.
Parameter/Condition
Symbol1
Min
Typ
Max
Unit
Notes
RXD[1:0], CRS_DV, RX_ER hold time to REF_CLK
rising edge
tRMRDX
2.0
—
—
ns
—
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMRDVKH symbolizes MII receive
timing (MR) with respect to the time data input signals (D) reach the valid state (V) relative to the tMRX clock reference (K)
going to the high (H) state or setup time. Also, tMRDXKL symbolizes MII receive timing (GR) with respect to the time data input
signals (D) went invalid (X) relative to the tMRX clock reference (K) going to the low (L) state or hold time. Note that, in general,
the clock reference symbol representation is based on three letters representing the clock of a particular functional. For
example, the subscript of tMRX represents the MII (M) receive (RX) clock. For rise and fall times, the latter convention is used
with the appropriate letter: R (rise) or F (fall).
Figure 20 provides the AC test load for eTSEC.
Z0 = 50 Ω
Output
RL = 50 Ω
LVDD/2
Figure 20. eTSEC AC Test Load
Figure 21 shows the RMII receive AC timing diagram.
tRMR
tRMRR
REF_CLK
tRMRH
RXD[1:0]
CRS_DV
RX_ER
tRMRF
Valid Data
tRMRDV
tRMRDX
Figure 21. RMII Receive AC Timing Diagram
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
37
Ethernet Management Interface Electrical Characteristics
9
Ethernet Management Interface Electrical
Characteristics
The electrical characteristics specified here apply to MII management interface signals MDIO
(management data input/output) and MDC (management data clock). The electrical characteristics for
GMII, RGMII, RMII, TBI, and RTBI are specified in “Section 8, “Enhanced Three-Speed Ethernet
(eTSEC), MII Management.”
9.1
MII Management DC Electrical Characteristics
The MDC and MDIO are defined to operate at a supply voltage of 3.3 V. The DC electrical characteristics
for MDIO and MDC are provided in Table 35.
Table 35. MII Management DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
Notes
OVDD
3.135
3.465
V
—
Output high voltage (OVDD = Min, IOH = –1.0 mA)
VOH
2.10
3.60
V
—
Output low voltage (OVDD = Min, IOL = 1.0 mA)
VOL
GND
0.50
V
—
Input high voltage
VIH
1.95
—
V
—
Input low voltage
VIL
—
0.90
V
—
Input high current (OVDD = Max, VIN = 2.1 V)
IIH
—
40
μA
1
Input low current (OVDD = Max, VIN = 0.5 V)
IIL
–600
—
μA
—
Supply voltage (3.3 V)
Note:
1. The symbol VIN, in this case, represents the OVIN symbol referenced in Table 1 and Table 2.
9.2
MII Management AC Electrical Specifications
Table 36 provides the MII management AC timing specifications.
Table 36. MII Management AC Timing Specifications
At recommended operating conditions with OVDD is 3.3 V ± 5%.
Symbol1
Min
Typ
Max
Unit
Notes
MDC frequency
fMDC
—
2.5
—
MHz
2
MDC period
tMDC
—
400
—
ns
—
MDC clock pulse width high
tMDCH
32
—
—
ns
—
MDC to MDIO delay
tMDKHDX
(16 × tplb_clk) – 3
—
(16 × tplb_clk) + 3
ns
3, 4
MDIO to MDC setup time
tMDDVKH
5
—
—
ns
—
MDIO to MDC hold time
tMDDXKH
0
—
—
ns
—
tMDCR
—
—
10
ns
—
Parameter/Condition
MDC rise time
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
38
Freescale Semiconductor
Ethernet Management Interface Electrical Characteristics
Table 36. MII Management AC Timing Specifications (continued)
At recommended operating conditions with OVDD is 3.3 V ± 5%.
Parameter/Condition
Symbol1
Min
Typ
Max
Unit
Notes
tMDHF
—
—
10
ns
—
MDC fall time
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMDKHDX symbolizes management
data timing (MD) for the time tMDC from clock reference (K) high (H) until data outputs (D) are invalid (X) or data hold time.
Also, tMDDVKH symbolizes management data timing (MD) with respect to the time data input signals (D) reach the valid state
(V) relative to the tMDC clock reference (K) going to the high (H) state or setup time. For rise and fall times, the latter
convention is used with the appropriate letter: R (rise) or F (fall).
2. This parameter is dependent on the platform clock frequency (MIIMCFG [MgmtClk] field determines the clock frequency of
the MgmtClk Clock EC_MDC).
3. This parameter is dependent on the platform clock frequency. The delay is equal to 16 platform clock periods ±3 ns. For
example, with a platform clock of 333 MHz, the min/max delay is 48 ns ± 3 ns. Similarly, if the platform clock is 400 MHz, the
min/max delay is 40 ns ± 3 ns).
4. tplb_clk is the platform (CCB) clock.
Figure 22 shows the MII management AC timing diagram.
tMDC
tMDCR
MDC
tMDCF
tMDCH
MDIO
(Input)
tMDDVKH
tMDDXKH
MDIO
(Output)
tMDKHDX
Figure 22. MII Management Interface Timing Diagram
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
39
Local Bus
10 Local Bus
This section describes the DC and AC electrical specifications for the local bus interface of the
MPC8533E.
10.1
Local Bus DC Electrical Characteristics
Table 37 provides the DC electrical characteristics for the local bus interface operating at
BVDD = 3.3 V DC.
Table 37. Local Bus DC Electrical Characteristics (3.3 V DC)
Parameter
Symbol
Min
Max
Unit
Notes
High-level input voltage
VIH
2
BVDD + 0.3
V
—
Low-level input voltage
VIL
–0.3
0.8
V
—
Input current (BV IN = 0 V or BVIN = BOVDD)
IIN
—
±5
μA
1
High-level output voltage (BVDD = min, IOH = –2 mA)
VOH
2.4
—
V
—
Low-level output voltage (BV DD = min, IOL = 2 mA)
VOL
—
0.4
V
—
Note:
1. The symbol BVIN, in this case, represents the BVIN symbol referenced in Table 1 and Table 2.
Table 38 provides the DC electrical characteristics for the local bus interface operating at
BVDD = 2.5 V DC.
Table 38. Local Bus DC Electrical Characteristics (2.5 V DC)
Parameter
Symbol
Min
Max
Unit
Notes
High-level input voltage
VIH
1.70
BVDD + 0.3
V
—
Low-level input voltage
VIL
–0.3
0.7
V
—
Input current (BV IN = 0 V or BVIN = BVDD)
IIN
—
±15
μA
1
High-level output voltage (BVDD = min, IOH = –1 mA)
VOH
2.0
—
V
—
Low-level output voltage (BV DD = min, IOL = 1 mA)
VOL
—
0.4
V
—
Note:
1. The symbol BVIN, in this case, represents the BVIN symbol referenced in Table 1 and Table 2.
Table 39 provides the DC electrical characteristics for the local bus interface operating at
BVDD = 1.8 V DC.
Table 39. Local Bus DC Electrical Characteristics (1.8 V DC)
Parameter
Symbol
Min
Max
Unit
Notes
High-level input voltage
VIH
1.3
BVDD + 0.3
V
—
Low-level input voltage
VIL
–0.3
0.6
V
—
Input current (BV IN = 0 V or BVIN = BVDD)
IIN
—
±15
μA
1
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
40
Freescale Semiconductor
Local Bus
Table 39. Local Bus DC Electrical Characteristics (1.8 V DC) (continued)
Parameter
Symbol
Min
Max
Unit
Notes
High-level output voltage
(BVDD = min, IOH = –2 mA)
VOH
1.35
—
V
—
Low-level output voltage
(BVDD = min, IOL = 2 mA)
VOL
—
0.45
V
—
10.2
Local Bus AC Electrical Specifications
Table 40 describes the general timing parameters of the local bus interface at BVDD = 3.3 V. For
information about the frequency range of local bus see Section 19.1, “Clock Ranges.”
Table 40. Local Bus General Timing Parameters (BVDD = 3.3 V)—PLL Enabled
Symbol1
Min
Max
Unit
Notes
Local bus cycle time
tLBK
7.5
12
ns
2
Local bus duty cycle
tLBKH/tLBK
43
57
%
—
LCLK[n] skew to LCLK[m] or LSYNC_OUT
tLBKSKEW
—
150
ps
7, 8
Input setup to local bus clock (except LUPWAIT)
tLBIVKH1
2.5
—
ns
3, 4
LUPWAIT input setup to local bus clock
tLBIVKH2
1.85
—
ns
3, 4
Input hold from local bus clock (except LUPWAIT)
tLBIXKH1
1.0
—
ns
3, 4
LUPWAIT input hold from local bus clock
tLBIXKH2
1.0
—
ns
3, 4
LALE output transition to LAD/LDP output transition
(LATCH setup and hold time)
tLBOTOT
1.5
—
ns
6
Local bus clock to output valid (except LAD/LDP and LALE)
tLBKHOV1
—
2.9
ns
—
Local bus clock to data valid for LAD/LDP
tLBKHOV2
—
2.8
ns
—
Local bus clock to address valid for LAD
tLBKHOV3
—
2.7
ns
3
Local bus clock to LALE assertion
tLBKHOV4
—
2.7
ns
3
Output hold from local bus clock (except LAD/LDP and
LALE)
tLBKHOX1
0.7
—
ns
3
Output hold from local bus clock for LAD/LDP
tLBKHOX2
0.7
—
ns
3
Local bus clock to output high Impedance (except
LAD/LDP and LALE)
tLBKHOZ1
—
2.5
ns
5
Parameter
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
41
Local Bus
Table 40. Local Bus General Timing Parameters (BVDD = 3.3 V)—PLL Enabled (continued)
Parameter
Local bus clock to output high impedance for LAD/LDP
Symbol1
Min
Max
Unit
Notes
tLBKHOZ2
—
2.5
ns
5
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tLBIXKH1 symbolizes local bus
timing (LB) for the input (I) to go invalid (X) with respect to the time the t LBK clock reference (K) goes high (H), in this case for
clock one (1). Also, tLBKHOX symbolizes local bus timing (LB) for the tLBK clock reference (K) to go high (H), with respect to
the output (O) going invalid (X) or output hold time.
2. All timings are in reference to LSYNC_IN for PLL enabled and internal local bus clock for PLL bypass mode.
3. All signals are measured from BVDD/2 of the rising edge of LSYNC_IN for PLL enabled or internal local bus clock for PLL
bypass mode to 0.4 × BVDD of the signal in question for 3.3-V signaling levels.
4. Input timings are measured at the pin.
5. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
6. tLBOTOT is a measurement of the minimum time between the negation of LALE and any change in LAD. tLBOTOT is
programmed with the LBCR[AHD] parameter.
7. Maximum possible clock skew between a clock LCLK[m] and a relative clock LCLK[n]. Skew measured between
complementary signals at BV DD/2.
Table 41 describes the general timing parameters of the local bus interface at BVDD = 2.5 V.
Table 41. Local Bus General Timing Parameters (BVDD = 2.5 V)—PLL Enabled
Symbol1
Min
Max
Unit
Notes
Local bus cycle time
tLBK
7.5
12
ns
2
Local bus duty cycle
tLBKH/tLBK
43
57
%
—
LCLK[n] skew to LCLK[m] or LSYNC_OUT
tLBKSKEW
—
150
ps
7
Input setup to local bus clock (except LUPWAIT)
tLBIVKH1
2.4
—
ns
3, 4
LUPWAIT input setup to local bus clock
tLBIVKH2
1.8
—
ns
3, 4
Input hold from local bus clock (except LUPWAIT)
tLBIXKH1
1.1
—
ns
3, 4
LUPWAIT input hold from local bus clock
tLBIXKH2
1.1
—
ns
3, 4
LALE output transition to LAD/LDP output transition
(LATCH setup and hold time)
tLBOTOT
1.5
—
ns
6
Local bus clock to output valid (except LAD/LDP and LALE)
tLBKHOV1
—
2.8
ns
—
Local bus clock to data valid for LAD/LDP
tLBKHOV2
—
2.8
ns
3
Local bus clock to address valid for LAD
tLBKHOV3
—
2.8
ns
3
Local bus clock to LALE assertion
tLBKHOV4
—
2.8
ns
3
Output hold from local bus clock (except LAD/LDP and
LALE)
tLBKHOX1
0.8
—
ns
3
Output hold from local bus clock for LAD/LDP
tLBKHOX2
0.8
—
ns
3
Local bus clock to output high Impedance (except
LAD/LDP and LALE)
tLBKHOZ1
—
2.6
ns
5
Parameter
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
42
Freescale Semiconductor
Local Bus
Table 41. Local Bus General Timing Parameters (BVDD = 2.5 V)—PLL Enabled (continued)
Parameter
Local bus clock to output high impedance for LAD/LDP
Symbol1
Min
Max
Unit
Notes
tLBKHOZ2
—
2.6
ns
5
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(First two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tLBIXKH1 symbolizes local bus
timing (LB) for the input (I) to go invalid (X) with respect to the time the tLBK clock reference (K) goes high (H), in this case
for clock one (1). Also, tLBKHOX symbolizes local bus timing (LB) for the tLBK clock reference (K) to go high (H), with respect
to the output (O) going invalid (X) or output hold time.
2. All timings are in reference to LSYNC_IN for PLL enabled and internal local bus clock for PLL bypass mode.
3. All signals are measured from BVDD/2 of the rising edge of LSYNC_IN for PLL enabled or internal local bus clock for PLL
bypass mode to 0.4 × BVDD of the signal in question for 2.5-V signaling levels.
4. Input timings are measured at the pin.
5. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
6. tLBOTOT is a measurement of the minimum time between the negation of LALE and any change in LAD. tLBOTOT is
programmed with the LBCR[AHD] parameter.
7. Maximum possible clock skew between a clock LCLK[m] and a relative clock LCLK[n]. Skew measured between
complementary signals at BV DD/2.
Table 42 describes the general timing parameters of the local bus interface at BVDD = 1.8 V DC.
Table 42. Local Bus General Timing Parameters (BVDD = 1.8 V DC)
Symbol1
Min
Max
Unit
Notes
Local bus cycle time
tLBK
7.5
12
ns
2
Local bus duty cycle
tLBKH/tLBK
43
57
%
—
LCLK[n] skew to LCLK[m] or LSYNC_OUT
tLBKSKEW
—
150
ps
7
Input setup to local bus clock (except LUPWAIT)
tLBIVKH1
2.6
—
ns
3, 4
LUPWAIT input setup to local bus clock
tLBIVKH2
1.9
—
ns
3, 4
Input hold from local bus clock (except LUPWAIT)
tLBIXKH1
1.1
—
ns
3, 4
LUPWAIT input hold from local bus clock
tLBIXKH2
1.1
—
ns
3, 4
LALE output transition to LAD/LDP output transition
(LATCH setup and hold time)
tLBOTOT
1.2
—
ns
6
Local bus clock to output valid (except LAD/LDP and LALE)
tLBKHOV1
—
3.2
ns
—
Local bus clock to data valid for LAD/LDP
tLBKHOV2
—
3.2
ns
3
Local bus clock to address valid for LAD
tLBKHOV3
—
3.2
ns
3
Local bus clock to LALE assertion
tLBKHOV4
—
3.2
ns
3
Output hold from local bus clock (except LAD/LDP and
LALE)
tLBKHOX1
0.9
—
ns
3
Output hold from local bus clock for LAD/LDP
tLBKHOX2
0.9
—
ns
3
Local bus clock to output high Impedance (except
LAD/LDP and LALE)
tLBKHOZ1
—
2.6
ns
5
Parameter
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
43
Local Bus
Table 42. Local Bus General Timing Parameters (BVDD = 1.8 V DC) (continued)
Parameter
Local bus clock to output high impedance for LAD/LDP
Symbol1
Min
Max
Unit
Notes
tLBKHOZ2
—
2.6
ns
5
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tLBIXKH1 symbolizes local bus
timing (LB) for the input (I) to go invalid (X) with respect to the time the t LBK clock reference (K) goes high (H), in this case for
clock one (1). Also, tLBKHOX symbolizes local bus timing (LB) for the tLBK clock reference (K) to go high (H), with respect to
the output (O) going invalid (X) or output hold time.
2. All timings are in reference to LSYNC_IN for PLL enabled and internal local bus clock for PLL bypass mode.
3. All signals are measured from BVDD/2 of the rising edge of LSYNC_IN for PLL enabled or internal local bus clock for PLL
bypass mode to 0.4 × BVDD of the signal in question for 1.8-V signaling levels.
4. Input timings are measured at the pin.
5. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
6. tLBOTOT is a measurement of the minimum time between the negation of LALE and any change in LAD. tLBOTOT is
programmed with the LBCR[AHD] parameter.
7. Maximum possible clock skew between a clock LCLK[m] and a relative clock LCLK[n]. Skew measured between
complementary signals at BV DD/2.
Figure 23 provides the AC test load for the local bus.
Output
Z0 = 50 Ω
RL = 50 Ω
BVDD/2
Figure 23. Local Bus AC Test Load
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
44
Freescale Semiconductor
Local Bus
Figure 24 through Figure 29 show the local bus signals.
LSYNC_IN
tLBIXKH1
tLBIVKH1
Input Signals:
LAD[0:31]/LDP[0:3]
tLBIXKH2
tLBIVKH2
Input Signal:
LGTA
LUPWAIT
Output Signals:
LA[27:31]/LBCTL/LBCKE/LOE/
LSDA10/LSDWE/LSDRAS/
LSDCAS/LSDDQM[0:3]
tLBKHOV1
tLBKHOZ1
tLBKHOX1
tLBKHOV2
tLBKHOZ2
tLBKHOX2
Output (Data) Signals:
LAD[0:31]/LDP[0:3]
tLBKHOV3
tLBKHOZ2
tLBKHOX2
Output (Address) Signal:
LAD[0:31]
tLBOTOT
tLBKHOV4
LALE
Figure 24. Local Bus Signals (PLL Enabled)
Table 43 describes the general timing parameters of the local bus interface at VDD = 3.3 V DC with PLL
disabled.
Table 43. Local Bus General Timing Parameters—PLL Bypassed
Symbol1
Min
Max
Unit
Notes
Local bus cycle time
tLBK
12
—
ns
2
Local bus duty cycle
tLBKH/tLBK
43
57
%
—
Internal launch/capture clock to LCLK delay
tLBKHKT
1.2
4.9
ns
—
Input setup to local bus clock (except LUPWAIT)
tLBIVKH1
7.4
—
ns
4, 5
LUPWAIT input setup to local bus clock
tLBIVKL2
6.75
—
ns
4, 5
Input hold from local bus clock (except LUPWAIT)
tLBIXKH1
–0.2
—
ns
4, 5
LUPWAIT input hold from local bus clock
tLBIXKL2
–0.2
—
ns
4, 5
LALE output transition to LAD/LDP output transition
(LATCH hold time)
tLBOTOT
1.5
—
ns
6
Local bus clock to output valid (except LAD/LDP and LALE)
tLBKLOV1
—
1.6
ns
—
Parameter
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
45
Local Bus
Table 43. Local Bus General Timing Parameters—PLL Bypassed (continued)
Symbol1
Min
Max
Unit
Notes
Local bus clock to data valid for LAD/LDP
tLBKLOV2
—
1.6
ns
4
Local bus clock to address valid for LAD, and LALE
tLBKLOV3
—
1.6
ns
4
Output hold from local bus clock (except LAD/LDP and
LALE)
tLBKLOX1
–4.1
—
ns
4
Output hold from local bus clock for LAD/LDP
tLBKLOX2
–4.1
—
ns
4
Local bus clock to output high Impedance (except
LAD/LDP and LALE)
tLBKLOZ1
—
1.4
ns
7
Local bus clock to output high impedance for LAD/LDP
tLBKLOZ2
—
1.4
ns
7
Parameter
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tLBIXKH1 symbolizes local bus
timing (LB) for the input (I) to go invalid (X) with respect to the time the tLBK clock reference (K) goes high (H), in this case
for clock one (1). Also, tLBKHOX symbolizes local bus timing (LB) for the tLBK clock reference (K) to go high (H), with respect
to the output (O) going invalid (X) or output hold time.
2. All timings are in reference to local bus clock for PLL bypass mode. Timings may be negative with respect to the local bus
clock because the actual launch and capture of signals is done with the internal launch/capture clock, which proceeds LCLK
by tLBKHKT.
3. Maximum possible clock skew between a clock LCLK[m] and a relative clock LCLK[n]. Skew measured between
complementary signals at BV DD/2.
4. All signals are measured from BVDD/2 of the rising edge of local bus clock for PLL bypass mode to 0.4 × BVDD of the signal
in question for 3.3-V signaling levels.
5. Input timings are measured at the pin.
6. The value of tLBOTOT is the measurement of the minimum time between the negation of LALE and any change in LAD.
7. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
46
Freescale Semiconductor
Local Bus
Internal Launch/Capture Clock
tLBKHKT
LCLK[n]
tLBIVKH1
tLBIXKH1
Input Signals:
LAD[0:31]/LDP[0:3]
tLBIVKL2
Input Signal:
LGTA
tLBIXKL2
LUPWAIT
tLBKLOV1
tLBKLOX1
Output Signals:
LA[27:31]/LBCTL/LBCKE/LOE/
LSDA10/LSDWE/LSDRAS/
LSDCAS/LSDDQM[0:3]
tLBKLOZ1
tLBKLOZ2
tLBKLOV2
Output (Data) Signals:
LAD[0:31]/LDP[0:3]
tLBKLOX2
tLBKLOV3
Output (Address) Signal:
LAD[0:31]
tLBOTOT
LALE
Figure 25. Local Bus Signals (PLL Bypass Mode)
NOTE
In PLL bypass mode, LCLK[n] is the inverted version of the internal clock
with the delay of tLBKHKT. In this mode, signals are launched at the rising
edge of the internal clock and are captured at falling edge of the internal
clock withe the exception of LGTA/LUPWAIT (which is captured on the
rising edge of the internal clock).
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
47
Local Bus
LSYNC_IN
T1
T3
GPCM Mode Output Signals:
LCS[0:7]/LWE
tLBKHOV1
tLBKHOZ1
GPCM Mode Input Signal:
LGTA
tLBIVKH2
tLBIXKH2
UPM Mode Input Signal:
LUPWAIT
tLBIVKH1
Input Signals:
LAD[0:31]/LDP[0:3]
tLBIXKH1
tLBKHOV1
tLBKHOZ1
UPM Mode Output Signals:
LCS[0:7]/LBS[0:3]/LGPL[0:5]
Figure 26. Local Bus Signals, GPCM/UPM Signals for LCCR[CLKDIV] = 4 (PLL Enabled)
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Freescale Semiconductor
Local Bus
Internal Launch/Capture Clock
T1
T3
LCLK
tLBKLOX1
tLBKLOV1
GPCM Mode Output Signals:
LCS[0:7]/LWE
tLBKLOZ1
GPCM Mode Input Signal:
LGTA
tLBIVKL2
tLBIXKL2
UPM Mode Input Signal:
LUPWAIT
tLBIVKH1
Input Signals:
LAD[0:31]/LDP[0:3]
tLBIXKH1
UPM Mode Output Signals:
LCS[0:7]/LBS[0:3]/LGPL[0:5]
Figure 27. Local Bus Signals, GPCM/UPM Signals for LCCR[CLKDIV] = 4 (PLL Bypass Mode)
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
49
Local Bus
LSYNC_IN
T1
T2
T3
T4
tLBKHOV1
tLBKHOZ1
GPCM Mode Output Signals:
LCS[0:7]/LWE
GPCM Mode Input Signal:
LGTA
tLBIVKH2
tLBIXKH2
UPM Mode Input Signal:
LUPWAIT
tLBIVKH1
Input Signals:
LAD[0:31]/LDP[0:3]
tLBIXKH1
tLBKHOV1
tLBKHOZ1
UPM Mode Output Signals:
LCS[0:7]/LBS[0:3]/LGPL[0:5]
Figure 28. Local Bus Signals, GPCM/UPM Signals for LCCR[CLKDIV] = 8 or 16 (PLL Enabled)
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Freescale Semiconductor
Programmable Interrupt Controller
Internal Launch/Capture Clock
T1
T2
T3
T4
LCLK
tLBKLOX1
tLBKLOV1
GPCM Mode Output Signals:
LCS[0:7]/LWE
tLBKLOZ1
GPCM Mode Input Signal:
LGTA
tLBIVKL2
tLBIXKL2
UPM Mode Input Signal:
LUPWAIT
tLBIVKH1
Input Signals:
LAD[0:31]/LDP[0:3]
tLBIXKH1
UPM Mode Output Signals:
LCS[0:7]/LBS[0:3]/LGPL[0:5]
Figure 29. Local Bus Signals, GPCM/UPM Signals for LCCR[CLKDIV] = 8 or 16 (PLL Bypass Mode)
11 Programmable Interrupt Controller
In IRQ edge trigger mode, when an external interrupt signal is asserted (according to the programmed
polarity), it must remain the assertion for at least 3 system clocks (SYSCLK periods).
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51
JTAG
12 JTAG
This section describes the AC electrical specifications for the IEEE 1149.1 (JTAG) interface of the
MPC8533E.
12.1
JTAG DC Electrical Characteristics
Table 44 provides the DC electrical characteristics for the JTAG interface.
Table 44. JTAG DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
Notes
High-level input voltage
VIH
2
OVDD + 0.3
V
—
Low-level input voltage
VIL
–0.3
0.8
V
—
Input current (OVIN = 0 V or OVIN = OVDD)
IIN
—
±5
μA
1
High-level output voltage (OVDD = min, IOH = –2 mA)
VOH
2.4
—
V
—
Low-level output voltage (OVDD = min, IOL = 2 mA)
VOL
—
0.4
V
—
Note:
1. Note that the symbol VIN, in this case, represents the OV IN.
12.2
JTAG AC Electrical Specifications
Table 45 provides the JTAG AC timing specifications as defined in Figure 30 through Figure 33.
Table 45. JTAG AC Timing Specifications (Independent of SYSCLK)1
At recommended operating conditions (see Table 3).
Symbol2
Min
Max
Unit
Notes
JTAG external clock frequency of operation
fJTG
0
33.3
MHz
—
JTAG external clock cycle time
tJTG
30
—
ns
—
tJTKHKL
15
—
ns
—
tJTGR & tJTGF
0
2
ns
—
tTRST
25
—
ns
3
ns
4
Boundary-scan data
TMS, TDI
tJTDVKH
tJTIVKH
4
0
—
—
ns
4
Boundary-scan data
TMS, TDI
tJTDXKH
tJTIXKH
20
25
—
—
ns
5
Boundary-scan data
TDO
tJTKLDV
tJTKLOV
4
4
20
25
Parameter
JTAG external clock pulse width measured at 1.4 V
JTAG external clock rise and fall times
TRST assert time
Input setup times:
Input hold times:
Valid times:
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Freescale Semiconductor
JTAG
Table 45. JTAG AC Timing Specifications (Independent of SYSCLK)1 (continued)
At recommended operating conditions (see Table 3).
Symbol2
Min
Max
Boundary-scan data
TDO
tJTKLDX
tJTKLOX
4
4
—
—
JTAG external clock to output high impedance:
Boundary-scan data
TDO
tJTKLDZ
tJTKLOZ
3
3
19
9
Parameter
Output hold times:
Unit
Notes
ns
5
ns
5
Notes:
1. All outputs are measured from the midpoint voltage of the falling/rising edge of tTCLK to the midpoint of the signal in question.
The output timings are measured at the pins. All output timings assume a purely resistive 50-Ω load (see Figure 30).
Time-of-flight delays must be added for trace lengths, vias, and connectors in the system.
2. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tJTDVKH symbolizes JTAG device
timing (JT) with respect to the time data input signals (D) reaching the valid state (V) relative to the tJTG clock reference (K)
going to the high (H) state or setup time. Also, tJTDXKH symbolizes JTAG timing (JT) with respect to the time data input signals
(D) went invalid (X) relative to the tJTG clock reference (K) going to the high (H) state. Note that, in general, the clock reference
symbol representation is based on three letters representing the clock of a particular functional. For rise and fall times, the
latter convention is used with the appropriate letter: R (rise) or F (fall).
3. TRST is an asynchronous level sensitive signal. The setup time is for test purposes only.
4. Non-JTAG signal input timing with respect to tTCLK.
5. Non-JTAG signal output timing with respect to tTCLK.
Figure 30 provides the AC test load for TDO and the boundary-scan outputs.
Z0 = 50 Ω
Output
RL = 50 Ω
OVDD/2
Figure 30. AC Test Load for the JTAG Interface
Figure 31 provides the JTAG clock input timing diagram.
JTAG
External Clock
VM
VM
VM
tJTKHKL
tJTGR
tJTG
tJTGF
VM = Midpoint Voltage (OVDD/2)
Figure 31. JTAG Clock Input Timing Diagram
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53
I2C
Figure 32 provides the TRST timing diagram.
TRST
VM
VM
tTRST
VM = Midpoint Voltage (OVDD/2)
Figure 32. TRST Timing Diagram
Figure 33 provides the boundary-scan timing diagram.
JTAG
External Clock
VM
VM
tJTDVKH
tJTDXKH
Boundary
Data Inputs
Input
Data Valid
tJTKLDV
tJTKLDX
Boundary
Data Outputs
Output Data Valid
tJTKLDZ
Boundary
Data Outputs
Output Data Valid
VM = Midpoint Voltage (OVDD/2)
Figure 33. Boundary-Scan Timing Diagram
13 I2C
This section describes the DC and AC electrical characteristics for the I2C interfaces of the MPC8533E.
13.1
I2C DC Electrical Characteristics
Table 46 provides the DC electrical characteristics for the I2C interfaces.
Table 46. I2C DC Electrical Characteristics
At recommended operating conditions with OVDD of 3.3 V ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
Input high voltage level
VIH
0.7 × OV DD
OVDD + 0.3
V
—
Input low voltage level
VIL
–0.3
0.3 × OV DD
V
—
Low level output voltage
VOL
0
0.2 × OV DD
V
1
tI2KHKL
0
50
ns
2
Pulse width of spikes which must be suppressed by the
input filter
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I2C
Table 46. I2C DC Electrical Characteristics (continued)
At recommended operating conditions with OVDD of 3.3 V ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
Input current each I/O pin (input voltage is between
0.1 × OVDD and 0.9 × OVDD(max)
II
–10
10
μA
3
Capacitance for each I/O pin
CI
—
10
pF
—
Notes:
1. Output voltage (open drain or open collector) condition = 3 mA sink current.
2. Refer to the MPC8533E PowerQUICC III Integrated Communications Host Processor Reference Manual for information on
the digital filter used.
3. I/O pins will obstruct the SDA and SCL lines if OVDD is switched off.
13.2
I2C AC Electrical Specifications
Table 47 provides the AC timing parameters for the I2C interfaces.
Table 47. I2C AC Electrical Specifications
All values refer to VIH (min) and VIL (max) levels (see Table 46).
Symbol1
Min
Max
Unit
Notes
SCL clock frequency
fI2C
0
400
kHz
—
Low period of the SCL clock
tI2CL
1.3
—
μs
—
High period of the SCL clock
tI2CH
0.6
—
μs
—
Setup time for a repeated START condition
tI2SVKH
0.6
—
μs
—
Hold time (repeated) START condition (after this period,
the first clock pulse is generated)
tI2SXKL
0.6
—
μs
—
Data setup time
tI2DVKH
100
—
ns
—
μs
2
—
0
—
—
Parameter
tI2DXKL
Data hold time:
CBUS compatible masters
I2C bus devices
Data output delay time
tI2OVKL
—
0.9
Set-up time for STOP condition
tI2PVKH
0.6
—
μs
—
Rise time of both SDA and SCL signals
tI2CR
20 + 0.1 C b
300
ns
4
Fall time of both SDA and SCL signals
tI2CF
20 + 0.1 C b
300
ns
4
tI2KHDX
1.3
—
μs
—
VNL
0.1 × OV DD
—
V
—
Bus free time between a STOP and START condition
Noise margin at the LOW level for each connected device
(including hysteresis)
3
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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I2C
Table 47. I2C AC Electrical Specifications (continued)
All values refer to VIH (min) and VIL (max) levels (see Table 46).
Parameter
Noise margin at the HIGH level for each connected
device (including hysteresis)
Symbol1
Min
Max
Unit
Notes
VNH
0.2 × OV DD
—
V
—
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tI2DVKH symbolizes I2C timing (I2)
with respect to the time data input signals (D) reach the valid state (V) relative to the tI2C clock reference (K) going to the high
(H) state or setup time. Also, tI2SXKL symbolizes I2C timing (I2) for the time that the data with respect to the start condition
(S) went invalid (X) relative to the tI2C clock reference (K) going to the low (L) state or hold time. Also, tI2PVKH symbolizes I2C
timing (I2) for the time that the data with respect to the stop condition (P) reaching the valid state (V) relative to the tI2C clock
reference (K) going to the high (H) state or setup time. For rise and fall times, the latter convention is used with the appropriate
letter: R (rise) or F (fall).
2. The MPC8533E provides a hold time of at least 300 ns for the SDA signal (referred to the VIHmin of the SCL signal) to bridge
the undefined region of the falling edge of SCL.
3. The maximum tI2DXKL has only to be met if the device does not stretch the LOW period (tI2CL) of the SCL signal.
4. CB = capacitance of one bus line in pF.
Figure 34 provides the AC test load for the I2C.
Output
Z0 = 50 Ω
RL = 50 Ω
OVDD/2
Figure 34. I2C AC Test Load
Figure 35 shows the AC timing diagram for the I2C bus.
SDA
tI2CF
tI2DVKH
tI2CL
tI2KHKL
tI2SXKL
tI2CF
tI2CR
SCL
tI2SXKL
S
tI2CH
tI2DXKL,tI2OXKL
tI2SVKH
Sr
tI2PVKH
P
S
Figure 35. I2C Bus AC Timing Diagram
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GPIO
14 GPIO
This section describes the DC and AC electrical specifications for the GPIO interface of the MPC8533E.
14.1
GPIO DC Electrical Characteristics
Table 48 provides the DC electrical characteristics for the GPIO interface.
Table 48. GPIO DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
Notes
High-level input voltage
VIH
2
OVDD + 0.3
V
—
Low-level input voltage
VIL
– 0.3
0.8
V
—
Input current (V IN = 0 V or VIN = VDD)
IIN
—
±5
μA
1
High-level output voltage (OVDD = mn, IOH = –2 mA)
VOH
2.4
—
V
—
Low-level output voltage (OVDD = min, IOL = 2 mA)
VOL
—
0.4
V
—
Note:
1. Note that the symbol VIN, in this case, represents the OV IN symbol referenced in Table 1 and Table 2.
14.2
GPIO AC Electrical Specifications
Table 49 provides the GPIO input and output AC timing specifications.
Table 49. GPIO Input AC Timing Specifications
Parameter
Symbol
Typ
Unit
Notes
tPIWID
20
ns
1
GPIO inputs—minimum pulse width
Note:
1. GPIO inputs and outputs are asynchronous to any visible clock. GPIO outputs should be synchronized before use by any
external synchronous logic. GPIO inputs are required to be valid for at least tPIWID ns to ensure proper operation.
Figure 36 provides the AC test load for the GPIO.
Output
Z0 = 50 Ω
RL = 50 Ω
OVDD/2
Figure 36. GPIO AC Test Load
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PCI
15 PCI
This section describes the DC and AC electrical specifications for the PCI bus of the MPC8533E.
15.1
PCI DC Electrical Characteristics
Table 50 provides the DC electrical characteristics for the PCI interface.
Table 50. PCI DC Electrical Characteristics 1
Parameter
Symbol
Min
Max
Unit
Notes
High-level input voltage
VIH
2
OVDD + 0.3
V
—
Low-level input voltage
VIL
–0.3
0.8
V
—
Input current (V IN = 0 V or VIN = VDD)
IIN
—
±5
μA
2
High-level output voltage (OVDD = min, IOH = –2mA)
VOH
2.4
—
V
—
Low-level output voltage (OVDD = min, IOL = 2 mA)
VOL
—
0.4
V
—
Notes:
1. Ranges listed do not meet the full range of the DC specifications of the PCI 2.2 Local Bus Specifications.
2. Note that the symbol VIN, in this case, represents the OV IN symbol referenced in Table 1 and Table 2.
15.2
PCI AC Electrical Specifications
This section describes the general AC timing parameters of the PCI bus. Note that the SYSCLK signal is
used as the PCI input clock. Table 51 provides the PCI AC timing specifications at 66 MHz.
Table 51. PCI AC Timing Specifications at 66 MHz
Symbol1
Min
Max
Unit
Notes
SYSCLK to output valid
tPCKHOV
—
7.4
ns
2, 3
Output hold from SYSCLK
tPCKHOX
2.0
—
ns
2
SYSCLK to output high impedance
tPCKHOZ
—
14
ns
2, 4
Input setup to SYSCLK
tPCIVKH
3.7
—
ns
2, 5
Input hold from SYSCLK
tPCIXKH
0.5
—
ns
2, 5
REQ64 to HRESET9 setup time
tPCRVRH
10 × tSYS
—
clocks
6, 7
HRESET to REQ64 hold time
tPCRHRX
0
50
ns
7
HRESET high to first FRAME assertion
tPCRHFV
10
—
clocks
8
Rise time (20%–80%)
tPCICLK
0.6
2.1
ns
—
Parameter
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PCI
Table 51. PCI AC Timing Specifications at 66 MHz (continued)
Parameter
Symbol1
Min
Max
Unit
Notes
tPCICLK
0.6
2.1
ns
—
Fall time (20%–80%)
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tPCIVKH symbolizes PCI timing
(PC) with respect to the time the input signals (I) reach the valid state (V) relative to the SYSCLK clock, tSYS, reference (K)
going to the high (H) state or setup time. Also, tPCRHFV symbolizes PCI timing (PC) with respect to the time hard reset (R)
went high (H) relative to the frame signal (F) going to the valid (V) state.
2. See the timing measurement conditions in the PCI 2.2 Local Bus Specifications.
3. All PCI signals are measured from OVDD/2 of the rising edge of PCI_SYNC_IN to 0.4 × OVDD of the signal in question for
3.3-V PCI signaling levels.
4. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
5. Input timings are measured at the pin.
6. The timing parameter tSYS indicates the minimum and maximum CLK cycle times for the various specified frequencies. The
system clock period must be kept within the minimum and maximum defined ranges. For values see Section 19, “Clocking.”
7. The setup and hold time is with respect to the rising edge of HRESET.
8. The timing parameter tPCRHFV is a minimum of 10 clocks rather than the minimum of 5 clocks in the PCI 2.2 Local Bus
Specifications.
9. The reset assertion timing requirement for HRESET is 100 μs.
Figure 37 provides the AC test load for PCI.
Output
Z0 = 1 KΩ
RL = 50 Ω
OVDD/2
Figure 37. PCI AC Test Load
Figure 38 shows the PCI input AC timing conditions.
CLK
tPCIVKH
tPCIXKH
Input
Figure 38. PCI Input AC Timing Measurement Conditions
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High-Speed Serial Interfaces (HSSI)
Figure 39 shows the PCI output AC timing conditions.
CLK
tPCKHOV
Output Delay
tPCKHOZ
High-Impedance
Output
Figure 39. PCI Output AC Timing Measurement Condition
16 High-Speed Serial Interfaces (HSSI)
The MPC8533E features two Serializer/Deserializer (SerDes) interfaces to be used for high-speed serial
interconnect applications.Both SerDes1 and SerDes2 can be used for PCI Express data transfers
application.This section describes the common portion of SerDes DC electrical specifications, which is the
DC requirement for SerDes Reference Clocks. The SerDes data lane’s transmitter and receiver reference
circuits are also shown.
16.1
Signal Terms Definition
The SerDes utilizes differential signaling to transfer data across the serial link. This section defines terms
used in the description and specification of differential signals.
Figure 40 shows how the signals are defined. For illustration purpose, only one SerDes lane is used for
description. The figure shows waveform for either a transmitter output (SDn_TX and SDn_TX) or a
receiver input (SDn_RX and SDn_RX). Each signal swings between A Volts and B Volts where A > B.
Using this waveform, the definitions are as follows. To simplify illustration, the following definitions
assume that the SerDes transmitter and receiver operate in a fully symmetrical differential signaling
environment.
1. Single-Ended Swing
The transmitter output signals and the receiver input signals SDn_TX, SDn_TX, SDn_RX and
SDn_RX each have a peak-to-peak swing of A - B Volts. This is also referred as each signal wire’s
Single-Ended Swing.
2. Differential Output Voltage, VOD (or Differential Output Swing):
The Differential Output Voltage (or Swing) of the transmitter, VOD, is defined as the difference of
the two complimentary output voltages: VSDn_TX – VSDn_TX. The VOD value can be either positive
or negative.
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High-Speed Serial Interfaces (HSSI)
3. Differential Input Voltage, VID (or Differential Input Swing):
The Differential Input Voltage (or Swing) of the receiver, VID, is defined as the difference of the
two complimentary input voltages: VSDn_RX – VSDn_RX. The VID value can be either positive or
negative.
4. Differential Peak Voltage, VDIFFp
The peak value of the differential transmitter output signal or the differential receiver input signal
is defined as Differential Peak Voltage, VDIFFp = |A – B| Volts.
5. Differential Peak-to-Peak, VDIFFp-p
Since the differential output signal of the transmitter and the differential input signal of the receiver
each range from A – B to –(A – B) Volts, the peak-to-peak value of the differential transmitter
output signal or the differential receiver input signal is defined as Differential Peak-to-Peak
Voltage, VDIFFp-p = 2*VDIFFp = 2 * |(A – B)| Volts, which is twice of differential swing in
amplitude, or twice of the differential peak. For example, the output differential peak-peak voltage
can also be calculated as VTX-DIFFp-p = 2*|VOD|.
6. Differential Waveform
The differential waveform is constructed by subtracting the inverting signal (SDn_TX, for
example) from the non-inverting signal (SDn_TX, for example) within a differential pair. There is
only one signal trace curve in a differential waveform. The voltage represented in the differential
waveform is not referenced to ground. Refer to Figure 40 as an example for differential waveform.
7. Common Mode Voltage, Vcm
The Common Mode Voltage is equal to one half of the sum of the voltages between each conductor
of a balanced interchange circuit and ground. In this example, for SerDes output, Vcm_out =
VSDn_TX + VSDn_TX = (A + B) / 2, which is the arithmetic mean of the two complimentary output
voltages within a differential pair. In a system, the common mode voltage may often differ from
one component’s output to the other’s input. Sometimes, it may be even different between the
receiver input and driver output circuits within the same component. It is also referred as the DC
offset in some occasions.
SDn_TX or
SDn_RX
A Volts
Vcm = (A + B) / 2
SDn_TX or
SDn_RX
B Volts
Differential Swing, VID or VOD = A – B
Differential Peak Voltage, VDIFFp = |A – B|
Differential Peak-Peak Voltage, VDIFFpp = 2*VDIFFp (not shown)
Figure 40. Differential Voltage Definitions for Transmitter or Receiver
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High-Speed Serial Interfaces (HSSI)
To illustrate these definitions using real values, consider the case of a CML (Current Mode Logic)
transmitter that has a common mode voltage of 2.25 V and each of its outputs, TD and TD, has a swing
that goes between 2.5 V and 2.0 V. Using these values, the peak-to-peak voltage swing of each signal (TD
or TD) is 500 mV p-p, which is referred as the single-ended swing for each signal. In this example, since
the differential signaling environment is fully symmetrical, the transmitter output’s differential swing
(VOD) has the same amplitude as each signal’s single-ended swing. The differential output signal ranges
between 500 mV and –500 mV, in other words, VOD is 500 mV in one phase and –500 mV in the other
phase. The peak differential voltage (VDIFFp) is 500 mV. The peak-to-peak differential voltage (VDIFFp-p)
is 1000 mV p-p.
16.2
SerDes Reference Clocks
The SerDes reference clock inputs are applied to an internal PLL whose output creates the clock used by
the corresponding SerDes lanes. The SerDes reference clocks inputs are SD1_REF_CLK and
SD1_REF_CLK for PCI Express1 PCI Express2. SD2_REF_CLK and SD2_REF_CLK for the PCI
Express3. The following sections describe the SerDes reference clock requirements and some application
information.
16.2.1
SerDes Reference Clock Receiver Characteristics
Figure 41 shows a receiver reference diagram of the SerDes reference clocks.
• The supply voltage requirements for XVDD_SRDS2 are specified in Table 1 and Table 2.
• SerDes reference clock receiver reference circuit structure
— The SDn_REF_CLK and SDn_REF_CLK are internally AC-coupled differential inputs as
shown in Figure 41. Each differential clock input (SDn_REF_CLK or SDn_REF_CLK) has a
50-Ω termination to SGND_SRDSn (xcorevss) followed by on-chip AC-coupling.
— The external reference clock driver must be able to drive this termination.
— The SerDes reference clock input can be either differential or single-ended. Refer to the
differential mode and single-ended mode description below for further detailed requirements.
• The maximum average current requirement that also determines the common mode voltage range:
— When the SerDes reference clock differential inputs are DC coupled externally with the clock
driver chip, the maximum average current allowed for each input pin is 8 mA. In this case, the
exact common mode input voltage is not critical as long as it is within the range allowed by the
maximum average current of 8 mA (refer to the following bullet for more detail), since the
input is AC-coupled on-chip.
— This current limitation sets the maximum common mode input voltage to be less than 0.4 V
(0.4 V/50 = 8 mA) while the minimum common mode input level is 0.1 V above
SGND_SRDSn (xcorevss). For example, a clock with a 50/50 duty cycle can be produced by
a clock driver with output driven by its current source from 0mA to 16mA (0–0.8 V), such that
each phase of the differential input has a single-ended swing from 0 V to 800 mV with the
common mode voltage at 400 mV.
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Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
•
— If the device driving the SDn_REF_CLK and SDn_REF_CLK inputs cannot drive 50 Ω to
SGND_SRDSn (xcorevss) DC, or it exceeds the maximum input current limitations, then it
must be AC-coupled off-chip.
The input amplitude requirement
— This requirement is described in detail in the following sections.
50 Ω
SDn_REF_CLK
Input
Amp
SDn_REF_CLK
50 Ω
Figure 41. Receiver of SerDes Reference Clocks
16.2.2
DC Level Requirement for SerDes Reference Clocks
The DC level requirement for the MPC8533E SerDes reference clock inputs is different depending on the
signaling mode used to connect the clock driver chip and SerDes reference clock inputs as described
below.
• Differential Mode
— The input amplitude of the differential clock must be between 400 and 1600 mV differential
peak-peak (or between 200 and 800 mV differential peak). In other words, each signal wire of
the differential pair must have a single-ended swing less than 800 mV and greater than 200 mV.
This requirement is the same for both external DC-coupled or AC-coupled connection.
— For external DC-coupled connection, as described in Section 16.2.1, “SerDes Reference
Clock Receiver Characteristics,” the maximum average current requirements sets the
requirement for average voltage (common mode voltage) to be between 100 and 400 mV.
Figure 42 shows the SerDes reference clock input requirement for DC-coupled connection
scheme.
— For external AC-coupled connection, there is no common mode voltage requirement for the
clock driver. Since the external AC-coupling capacitor blocks the DC level, the clock driver
and the SerDes reference clock receiver operate in different command mode voltages. The
SerDes reference clock receiver in this connection scheme has its common mode voltage set to
SGND_SRDSn. Each signal wire of the differential inputs is allowed to swing below and above
the command mode voltage (SGND_SRDSn). Figure 43 shows the SerDes reference clock
input requirement for AC-coupled connection scheme.
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63
High-Speed Serial Interfaces (HSSI)
•
Single-ended Mode
— The reference clock can also be single-ended. The SDn_REF_CLK input amplitude
(single-ended swing) must be between 400 and 800 mV peak-peak (from Vmin to Vmax) with
SDn_REF_CLK either left unconnected or tied to ground.
— The SDn_REF_CLK input average voltage must be between 200 and 400 mV. Figure 44 shows
the SerDes reference clock input requirement for single-ended signaling mode.
— To meet the input amplitude requirement, the reference clock inputs might need to be DC or
AC-coupled externally. For the best noise performance, the reference of the clock could be DC
or AC-coupled into the unused phase (SDn_REF_CLK) through the same source impedance as
the clock input (SDn_REF_CLK) in use.
SDn_REF_CLK
200 mV < Input Amplitude or Differential Peak < 800 mV
Vmax < 800 mV
100 mV < Vcm < 400 mV
Vmin > 0 V
SDn_REF_CLK
Figure 42. Differential Reference Clock Input DC Requirements (External DC-Coupled)
200 mV < Input Amplitude or Differential Peak < 800 mV
SDn_REF_CLK
Vmax < Vcm + 400 mV
Vcm
Vmin > Vcm - 400 mV
SDn_REF_CLK
Figure 43. Differential Reference Clock Input DC Requirements (External AC-Coupled)
400 mV < SDn_REF_CLK Input Amplitude < 800 mV
SDn_REF_CLK
0V
SDn_REF_CLK
Figure 44. Single-Ended Reference Clock Input DC Requirements
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Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
16.2.3
Interfacing With Other Differential Signaling Levels
With on-chip termination to SGND_SRDSn (xcorevss), the differential reference clocks inputs are HCSL
(high-speed current steering logic) compatible DC-coupled.
Many other low voltage differential type outputs like LVDS (low voltage differential signaling) can be
used but may need to be AC-coupled due to the limited common mode input range allowed (100 to
400 mV) for DC-coupled connection.
LVPECL outputs can produce signal with too large amplitude and may need to be DC-biased at clock
driver output first, then followed with series attenuation resistor to reduce the amplitude, in addition to
AC-coupling.
NOTE
Figure 45 through Figure 48 are for conceptual reference only. Due to the
fact that clock driver chip's internal structure, output impedance and
termination requirements are different between various clock driver chip
manufacturers, it is very possible that the clock circuit reference designs
provided by clock driver chip vendor are different from what is shown
below. They might also vary from one vendor to the other. Therefore,
Freescale Semiconductor can neither provide the optimal clock driver
reference circuits, nor guarantee the correctness of the following clock
driver connection reference circuits. The system designer is recommended
to contact the selected clock driver chip vendor for the optimal reference
circuits with the MPC8533E SerDes reference clock receiver requirement
provided in this document.
Figure 45 shows the SerDes reference clock connection reference circuits for HCSL type clock driver. It
assumes that the DC levels of the clock driver chip is compatible with MPC8533E SerDes reference clock
input’s DC requirement.
MPC8533EMP
HCSL CLK Driver Chip
CLK_Out
33 Ω
SDn_REF_CLK
50 Ω
SerDes Refer.
CLK Receiver
100 Ω differential PWB trace
Clock Driver
33 Ω
CLK_Out
Total 50 Ω. Assume clock driver’s
output impedance is about 16 Ω.
SDn_REF_CLK
50 Ω
Clock driver vendor dependent
source termination resistor
Figure 45. DC-Coupled Differential Connection with HCSL Clock Driver (Reference Only)
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65
High-Speed Serial Interfaces (HSSI)
Figure 46 shows the SerDes reference clock connection reference circuits for LVDS type clock driver.
Since LVDS clock driver’s common mode voltage is higher than the MPC8533E SerDes reference clock
input’s allowed range (100 to 400mV), AC-coupled connection scheme must be used. It assumes the
LVDS output driver features 50-Ω termination resistor. It also assumes that the LVDS transmitter
establishes its own common mode level without relying on the receiver or other external component.
MPC8533E
LVDS CLK Driver Chip
CLK_Out
10 nF
50 Ω
SerDes Refer.
CLK Receiver
100 Ω differential PWB trace
Clock Driver
CLK_Out
SDn_REF_CLK
10 nF
SDn_REF_CLK
50 Ω
Figure 46. AC-Coupled Differential Connection with LVDS Clock Driver (Reference Only)
Figure 47 shows the SerDes reference clock connection reference circuits for LVPECL type clock driver.
Since LVPECL driver’s DC levels (both common mode voltages and output swing) are incompatible with
MPC8533E SerDes reference clock input’s DC requirement, AC-coupling has to be used. Figure 47
assumes that the LVPECL clock driver’s output impedance is 50 Ω. R1 is used to DC-bias the LVPECL
outputs prior to AC-coupling. Its value could be ranged from 140 to 240 Ω depending on clock driver
vendor’s requirement. R2 is used together with the SerDes reference clock receiver’s 50-Ω termination
resistor to attenuate the LVPECL output’s differential peak level such that it meets the MPC8533E SerDes
reference clock’s differential input amplitude requirement (between 200 and 800 mV differential peak).
For example, if the LVPECL output’s differential peak is 900 mV and the desired SerDes reference clock
input amplitude is selected as 600 mV, the attenuation factor is 0.67, which requires R2 = 25 Ω. Please
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Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
consult clock driver chip manufacturer to verify whether this connection scheme is compatible with a
particular clock driver chip.
MPC8533E
LVPECL CLK
Driver Chip
CLK_Out
Clock Driver
10nF
R2
R1
50 Ω
SDn_REF_CLK
SerDes Refer.
CLK Receiver
100 Ω differential PWB trace
10nF
R2
SDn_REF_CLK
CLK_Out
R1
50 Ω
Figure 47. AC-Coupled Differential Connection with LVPECL Clock Driver (Reference Only)
Figure 48 shows the SerDes reference clock connection reference circuits for a single-ended clock driver.
It assumes the DC levels of the clock driver are compatible with MPC8533E SerDes reference clock
input’s DC requirement.
MPC8533E
Single-Ended
CLK Driver Chip
Total 50 Ω. Assume clock driver’s
output impedance is about 16 Ω.
Clock Driver
CLK_Out
50 Ω
SDn_REF_CLK
33 Ω
SerDes Refer.
CLK Receiver
100 Ω differential PWB trace
50 Ω
SDn_REF_CLK
50 Ω
Figure 48. Single-Ended Connection (Reference Only)
16.2.4
AC Requirements for SerDes Reference Clocks
The clock driver selected should provide a high quality reference clock with low phase noise and
cycle-to-cycle jitter. Phase noise less than 100 kHz can be tracked by the PLL and data recovery loops and
is less of a problem. Phase noise above 15 MHz is filtered by the PLL. The most problematic phase noise
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67
High-Speed Serial Interfaces (HSSI)
occurs in the 1–15 MHz range. The source impedance of the clock driver should be 50 Ω to match the
transmission line and reduce reflections which are a source of noise to the system.
Table 52 describes some AC parameters common to SGMII, and PCI Express protocols.
Table 52. SerDes Reference Clock Common AC Parameters
Parameter
Symbol
Min
Max
Unit
Notes
Rising Edge Rate
Rise Edge Rate
1.0
4.0
V/ns
2, 3
Falling Edge Rate
Fall Edge Rate
1.0
4.0
V/ns
2, 3
Differential Input High Voltage
VIH
+200
—
mV
2
Differential Input Low Voltage
VIL
—
–200
mV
2
Rise-Fall Matching
—
20
%
1, 4
Rising edge rate (SD n_REF_CLK) to falling edge rate
(SDn_REF_CLK) matching
Notes:
1. Measurment taken from single ended waveform.
2. Measurment taken from differential waveform.
3. Measured from –200 mV to +200 mV on the differential waveform (derived from SD n_REF_CLK minus SDn_REF_CLK). The
signal must be monotonic through the measurement region for rise and fall time. The 400 mV measurement window is
centered on the differential zero crossing. See Figure 49.
4. Matching applies to rising edge rate for SDn_REF_CLK and falling edge rate for SDn_REF_CLK. It is measured using a
200 mV window centered on the median cross point where SDn_REF_CLK rising meets SDn_REF_CLK falling. The median
cross point is used to calculate the voltage thresholds the oscilloscope is to use for the edge rate calculations. The rise edge
rate of SDn_REF_CLK should be compared to the fall edge rate of SDn_REF_CLK, the maximum allowed difference should
not exceed 20% of the slowest edge rate. See Figure 50.
Rise Edge Rage
Fall Edge Rate
VIH = +200 mV
0.0 V
VIL = –200 mV
SDn_REF_CLK
minus
SDn_REF_CLK
Figure 49. Differential Measurement Points for Rise and Fall Time
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Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
SDn_REF_CLK
SDn_REF_CLK
TFALL
TRISE
VCROSS MEDIAN + 100 mV
VCROSS MEDIAN
VCROSS MEDIAN
VCROSS MEDIAN – 100 mV
SDn_REF_CLK
SDn_REF_CLK
Figure 50. Single-Ended Measurement Points for Rise and Fall Time Matching
The other detailed AC requirements of the SerDes reference clocks is defined by each interface protocol
based on application usage. Refer to the following sections for detailed information:
• Section 17.2, “AC Requirements for PCI Express SerDes Clocks”
16.2.4.1
Spread Spectrum Clock
SD1_REF_CLK/SD1_REF_CLK were designed to work with a spread spectrum clock (+0 to –0.5%
spreading at 30–33 kHz rate is allowed), assuming both ends have same reference clock. For better results,
a source without significant unintended modulation should be used.
SD2_REF_CLK/SD2_REF_CLK are not intended to be used with, and should not be clocked by, a spread
spectrum clock source.
16.3
SerDes Transmitter and Receiver Reference Circuits
Figure 51 shows the reference circuits for SerDes data lane’s transmitter and receiver.
SD1_TXn or
50 Ω SD2_TXn
SD1_RXn or
SD2_RXn
50 Ω
Transmitter
Receiver
50 Ω
SD1_TXn or
SD2_TXn
SD1_RXn or
SD2_RXn
50 Ω
Figure 51. SerDes Transmitter and Receiver Reference Circuits
The DC and AC specification of SerDes data lanes are defined in the section below (PCI Express) in this
document based on the application usage:
• Section 17, “PCI Express”
Please note that external AC Coupling capacitor is required for the above serial transmission protocols
with the capacitor value defined in specification of each protocol section.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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69
PCI Express
17 PCI Express
This section describes the DC and AC electrical specifications for the PCI Express bus of the MPC8533E.
17.1
DC Requirements for PCI Express SD_REF_CLK and
SD_REF_CLK
For more information, see Section 16.2, “SerDes Reference Clocks.”
17.2
AC Requirements for PCI Express SerDes Clocks
Table 53 provides the AC requirements for the PCI Express SerDes clocks.
Table 53. SD_REF_CLK and SD_REF_CLK AC Requirements
Symbol2
Min
Typ
Max
Units
Notes
REFCLK cycle time
—
10
—
ns
1
tREFCJ
REFCLK cycle-to-cycle jitter. Difference in the period of any
two adjacent REFCLK cycles
—
—
100
ps
—
tREFPJ
Phase jitter. Deviation in edge location with respect to
mean edge location
–50
—
50
ps
—
tREF
Parameter Description
Notes:
1. Typical based on PCI Express Specification 2.0.
2. Guaranteed by characterization.
17.3
Clocking Dependencies
The ports on the two ends of a link must transmit data at a rate that is within 600 parts per million (ppm)
of each other at all times. This is specified to allow bit rate clock sources with a ±300 ppm tolerance.
17.4
Physical Layer Specifications
The following is a summary of the specifications for the physical layer of PCI Express on this device. For
further details as well as the specifications of the transport and data link layer please refer to the
PCI Express Base Specification. Rev. 1.0a.
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PCI Express
17.4.1
Differential Transmitter (TX) Output
Table 54 defines the specifications for the differential output at all transmitters (TXs). The parameters are
specified at the component pins.
Table 54. Differential Transmitter (TX) Output Specifications
Symbol
Parameter
Min
Nom
Max
Unit
Comments
399.88
400
400.12
ps
Each UI is 400 ps ± 300 ppm. UI does not
account for Spread Spectrum Clock
dictated variations. See Note 1.
UI
Unit interval
VTX-DIFFp-p
Differential peak-topeak output voltage
0.8
—
1.2
V
VTX-DIFFp-p = 2*|VTX-D+ – VTX-D–|.
See Note 2.
VTX-DE-RATIO
De- emphasized
differential output
voltage (ratio)
–3.0
–3.5
–4.0
dB
Ratio of the VTX-DIFFp-p of the second and
following bits after a transition divided by
the VTX-DIFFp-p of the first bit after a
transition. See Note 2.
TTX-EYE
Minimum TX eye width
0.70
—
—
UI
The maximum transmitter jitter can be
derived as TTX-MAX-JITTER = 1 – TTX-EYE
= 0.3 UI. See Notes 2 and 3.
TTX-EYE-MEDIAN-to-
Maximum time
between the jitter
median and maximum
deviation from the
median.
—
—
0.15
UI
Jitter is defined as the measurement
variation of the crossing points (VTX-DIFFp-p
= 0 V) in relation to a recovered TX UI. A
recovered TX UI is calculated over 3500
consecutive unit intervals of sample data.
Jitter is measured using all edges of the
250 consecutive UI in the center of the
3500 UI used for calculating the TX UI. See
Notes 2 and 3.
0.125
—
—
UI
See Notes 2 and 5.
MAX-JITTER
TTX-RISE, TTX-FALL
D+/D– TX output
rise/fall time
VTX-CM-ACp
RMS AC peak
common mode output
voltage
—
—
20
mV
VTX-CM-ACp = RMS(|VTXD+ –
VTXD–|/2 – VTX-CM-DC)
VTX-CM-DC = DC(avg) of |VTX-D+ –
VTX-D–|/2
See Note 2.
VTX-CM-DC-ACTIVE-
Absolute delta of DC
common mode voltage
during LO and
electrical idle
0
—
100
mV
|VTX-CM-DC (during LO) – VTX-CM-Idle-DC
(During Electrical Idle)|<= 100 mV
VTX-CM-DC = DC(avg) of |VTX-D+ –
VTX-D–|/2 [LO]
VTX-CM-Idle-DC = DC(avg) of |V TX-D+ –
VTX-D–|/2 [Electrical Idle]
See Note 2.
Absolute delta of DC
common mode
between D+ and D–
0
—
25
mV
|VTX-CM-DC-D+ – VTX-CM-DC-D–| <= 25 mV
VTX-CM-DC-D+ = DC(avg) of |V TX-D+|
VTX-CM-DC-D– = DC(avg) of |V TX-D–|
See Note 2.
IDLE-DELTA
VTX-CM-DC-LINE-DELTA
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PCI Express
Table 54. Differential Transmitter (TX) Output Specifications (continued)
Symbol
Parameter
Min
Nom
Max
Unit
Comments
VTX-IDLE-DIFFp
Electrical idle
differential peak output
voltage
0
—
20
mV
VTX-IDLE-DIFFp = |VTX-IDLE-D+ – VTX-IDLE-D–|
<= 20 mV
See Note 2.
VTX-RCV-DETECT
Amount of voltage
change allowed during
receiver detection
—
—
600
mV
The total amount of voltage change that a
transmitter can apply to sense whether a
low impedance receiver is present. See
Note 6.
VTX-DC-CM
TX DC common mode
voltage
0
—
3.6
V
ITX-SHORT
TX short circuit current
limit
—
—
90
mA
The total current the transmitter can
provide when shorted to its ground.
TTX-IDLE-MIN
Minimum time spent in
electrical idle
50
—
—
UI
Minimum time a transmitter must be in
electrical idle utilized by the receiver to
start looking for an electrical idle exit after
successfully receiving an electrical idle
ordered set.
TTX-IDLE-SET-TO-IDLE
Maximum time to
transition to a valid
electrical idle after
sending an electrical
Idle ordered set
—
—
20
UI
After sending an electrical idle ordered set,
the transmitter must meet all electrical idle
specifications within this time. This is
considered a debounce time for the
transmitter to meet electrical idle after
transitioning from LO.
TTX-IDLE-TO-DIFF-DATA
Maximum time to
transition to valid TX
specifications after
leaving an electrical
idle condition
—
—
20
UI
Maximum time to meet all TX
specifications when transitioning from
electrical idle to sending differential data.
This is considered a debounce time for the
TX to meet all TX specifications after
leaving electrical idle.
RLTX-DIFF
Differential return loss
12
—
—
dB
Measured over 50 MHz to 1.25 GHz. See
Note 4.
RLTX-CM
Common mode return
loss
6
—
—
dB
Measured over 50 MHz to 1.25 GHz. See
Note 4.
ZTX-DIFF-DC
DC differential TX
impedance
80
100
120
Ω
TX DC differential mode low impedance.
ZTX-DC
Transmitter DC
impedance
40
—
—
Ω
Required TX D+ as well as D– DC
Impedance during all states.
LTX-SKEW
Lane-to-lane output
skew
—
—
500 +
2 UI
ps
Static skew between any two transmitter
lanes within a single link.
CTX
AC coupling capacitor
75
—
200
nF
All transmitters shall be AC coupled. The
AC coupling is required either within the
media or within the transmitting component
itself.
The allowed DC common mode voltage
under any conditions. See Note 6.
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PCI Express
Table 54. Differential Transmitter (TX) Output Specifications (continued)
Symbol
Tcrosslink
Parameter
Crosslink random
timeout
Min
Nom
Max
Unit
0
—
1
ms
Comments
This random timeout helps resolve
conflicts in crosslink configuration by
eventually resulting in only one
downstream and one upstream port. See
Note 7.
Notes:
1. No test load is necessarily associated with this value.
2. Specified at the measurement point into a timing and voltage compliance test load as shown in Figure 54 and measured over
any 250 consecutive TX UIs. (Also refer to the transmitter compliance eye diagram shown in Figure 52.)
3. A TTX-EYE = 0.70 UI provides for a total sum of deterministic and random jitter budget of TTX-JITTER-MAX = 0.30 UI for the
transmitter collected over any 250 consecutive TX UIs. The TTX-EYE-MEDIAN-to-MAX-JITTER median is less than half of the total
TX jitter budget collected over any 250 consecutive TX UIs. It should be noted that the median is not the same as the mean.
The jitter median describes the point in time where the number of jitter points on either side is approximately equal as
opposed to the averaged time value.
4. The transmitter input impedance shall result in a differential return loss greater than or equal to 12 dB and a common mode
return loss greater than or equal to 6 dB over a frequency range of 50 MHz to 1.25 GHz. This input impedance requirement
applies to all valid input levels. The reference impedance for return loss measurements is 50 Ω to ground for both the D+ and
D– line (that is, as measured by a vector network analyzer with 50-Ω probes—see Figure 54.) Note that the series capacitors
CTX is optional for the return loss measurement.
5. Measured between 20%–80% at transmitter package pins into a test load as shown in Figure 54 for both V TX-D+ and VTX-D– .
6. See Section 4.3.1.8 of the PCI Express Base Specifications, Rev 1.0a.
7. See Section 4.2.6.3 of the PCI Express Base Specifications, Rev 1.0a.
17.4.2
Transmitter Compliance Eye Diagrams
The TX eye diagram in Figure 52 is specified using the passive compliance/test measurement load (see
Figure 54) in place of any real PCI Express interconnect +RX component.
There are two eye diagrams that must be met for the transmitter. Both eye diagrams must be aligned in
time using the jitter median to locate the center of the eye diagram. The different eye diagrams will differ
in voltage depending whether it is a transition bit or a de-emphasized bit. The exact reduced voltage level
of the de-emphasized bit will always be relative to the transition bit.
The eye diagram must be valid for any 250 consecutive UIs.
A recovered TX UI is calculated over 3500 consecutive unit intervals of sample data. The eye diagram is
created using all edges of the 250 consecutive UI in the center of the 3500 UI used for calculating the
TX UI.
NOTE
It is recommended that the recovered TX UI is calculated using all edges in
the 3500 consecutive UI interval with a fit algorithm using a minimization
merit function (that is, least squares and median deviation fits).
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PCI Express
VRX-DIFF = 0 mV
(D+ D– Crossing Point)
[Transition Bit]
VTX-DIFFp-p-MIN = 800 mV
VTX-DIFF = 0 mV
(D+ D– Crossing Point)
[De-Emphasized Bit]
566 mV (3 dB ) >= VTX-DIFFp-p-MIN >= 505 mV (4 dB )
0.07 UI = UI – 0.3 UI (JTX-TOTAL-MAX)
[Transition Bit]
VTX-DIFFp-p-MIN = 800 mV
Figure 52. Minimum Transmitter Timing and Voltage Output Compliance Specifications
17.4.3
Differential Receiver (RX) Input Specifications
Table 55 defines the specifications for the differential input at all receivers (RXs). The parameters are
specified at the component pins.
Table 55. Differential Receiver (RX) Input Specifications
Symbol
Parameter
Min
Nom
Max
Units
Comments
UI
Unit interval
399.88
400
400.12
ps
Each UI is 400 ps ± 300 ppm. UI does not
account for spread spectrum clock dictated
variations. See Note 1.
VRX-DIFFp-p
Differential peak-topeak input voltage
0.175
—
1.200
V
VRX-DIFFp-p = 2*|VRX-D+ – VRX-D–|
See Note 2.
TRX-EYE
Minimum receiver
eye width
0.4
—
—
UI
The maximum interconnect media and
transmitter jitter that can be tolerated by the
receiver can be derived as TRX-MAX-JITTER
= 1 – TRX-EYE = 0.6 UI.
See Notes 2 and 3.
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Freescale Semiconductor
PCI Express
Table 55. Differential Receiver (RX) Input Specifications (continued)
Symbol
Parameter
Min
Nom
Max
Units
Comments
TRX-EYE-MEDIAN-to-MAX Maximum time
between the jitter
median and
maximum deviation
from the median
—
—
0.3
UI
Jitter is defined as the measurement
variation of the crossing points (V RX-DIFFp-p
= 0 V) in relation to a recovered TX UI. A
recovered TX UI is calculated over 3500
consecutive unit intervals of sample data.
Jitter is measured using all edges of the 250
consecutive UI in the center of the 3500 UI
used for calculating the TX UI. See Notes 2,
3, and 7.
VRX-CM-ACp
AC peak common
mode input voltage
—
—
150
mV
VRX-CM-ACp = |VRXD+ – VRXD–|/2 –
VRX-CM-DC
VRX-CM-DC = DC(avg) of |VRX-D+ – VRX-D–|/2
See Note 2.
RLRX-DIFF
Differential return
loss
15
—
—
dB
Measured over 50 MHz to 1.25 GHz with the
D+ and D– lines biased at +300 and
–300 mV, respectively. See Note 4.
RLRX-CM
Common mode
return loss
6
—
—
dB
Measured over 50 MHz to 1.25 GHz with the
D+ and D– lines biased at 0 V. See Note 4.
ZRX-DIFF-DC
DC differential input
impedance
80
100
120
Ω
RX DC differential mode impedance. See
Note 5.
ZRX-DC
DC input impedance
40
50
60
Ω
Required RX D+ as well as D– DC
impedance (50 ± 20% tolerance).
See Notes 2 and 5.
ZRX-HIGH-IMP-DC
Powered down DC
input impedance
200 k
—
—
Ω
Required RX D+ as well as D– DC
impedance when the receiver terminations
do not have power. See Note 6.
VRX-IDLE-DET-DIFFp-p
Electrical idle detect
threshold
65
—
175
mV
VRX-IDLE-DET-DIFFp-p = 2 × |VRX-D+ – VRX-D–|
Measured at the package pins of the
receiver.
TRX-IDLE-DET-DIFF-
Unexpected
electrical idle enter
detect threshold
integration time
—
—
10
ms
An unexpected electrical idle (VRX-DIFFp-p
< V RX-IDLE-DET-DIFFp-p) must be recognized
no longer than TRX-IDLE-DET-DIFF-ENTERING to
signal an unexpected idle condition.
-JITTER
ENTERTIME
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
75
PCI Express
Table 55. Differential Receiver (RX) Input Specifications (continued)
Symbol
LTX-SKEW
Parameter
Total skew
Min
Nom
Max
Units
Comments
—
—
20
ns
Skew across all lanes on a link. This includes
variation in the length of SKP ordered set (for
example, COM and one to five symbols) at
the RX as well as any delay differences
arising from the interconnect itself.
Notes:
1. No test load is necessarily associated with this value.
2. Specified at the measurement point and measured over any 250 consecutive UIs. The test load in Figure 54 should be used
as the RX device when taking measurements (also refer to the receiver compliance eye diagram shown in Figure 53). If the
clocks to the RX and TX are not derived from the same reference clock, the TX UI recovered from 3500 consecutive UI must
be used as a reference for the eye diagram.
3. A TRX-EYE = 0.40 UI provides for a total sum of 0.60 UI deterministic and random jitter budget for the transmitter and
interconnect collected any 250 consecutive UIs. The TRX-EYE-MEDIAN-to-MAX-JITTER specification ensures a jitter
distribution in which the median and the maximum deviation from the median is less than half of the total. UI jitter budget
collected over any 250 consecutive TX UIs. It should be noted that the median is not the same as the mean. The jitter median
describes the point in time where the number of jitter points on either side is approximately equal as opposed to the averaged
time value. If the clocks to the RX and TX are not derived from the same reference clock, the TX UI recovered from 3500
consecutive UI must be used as the reference for the eye diagram.
4. The receiver input impedance shall result in a differential return loss greater than or equal to 15 dB with the D+ line biased to
300 mV and the D– line biased to –300 mV and a common mode return loss greater than or equal to 6 dB (no bias required)
over a frequency range of 50 MHz to 1.25 GHz. This input impedance requirement applies to all valid input levels. The
reference impedance for return loss measurements for is 50 Ω to ground for both the D+ and D– line (that is, as measured
by a vector network analyzer with 50-Ω probes, see Figure 54). Note that the series capacitors CTX is optional for the return
loss measurement.
5. Impedance during all LTSSM states. When transitioning from a fundamental reset to detect (the initial state of the LTSSM)
there is a 5-ms transition time before receiver termination values must be met on all unconfigured lanes of a port.
6. The RX DC common mode impedance that exists when no power is present or fundamental reset is asserted. This helps
ensure that the receiver detect circuit will not falsely assume a receiver is powered on when it is not. This term must be
measured at 300 mV above the RX ground.
7. It is recommended that the recovered TX UI is calculated using all edges in the 3500 consecutive UI interval with a fit algorithm
using a minimization merit function. Least squares and median deviation fits have worked well with experimental and
simulated data.
17.5
Receiver Compliance Eye Diagrams
The RX eye diagram in Figure 53 is specified using the passive compliance/test measurement load (see
Figure 54) in place of any real PCI Express RX component.
In general, the minimum receiver eye diagram measured with the compliance/test measurement load (see
Figure 54) will be larger than the minimum receiver eye diagram measured over a range of systems at the
input receiver of any real PCI Express component. The degraded eye diagram at the input receiver is due
to traces internal to the package as well as silicon parasitic characteristics which cause the real PCI Express
component to vary in impedance from the compliance/test measurement load. The input receiver eye
diagram is implementation specific and is not specified. RX component designer should provide additional
margin to adequately compensate for the degraded minimum receiver eye diagram (shown in Figure 53)
expected at the input receiver based on some adequate combination of system simulations and the return
loss measured looking into the RX package and silicon. The RX eye diagram must be aligned in time using
the jitter median to locate the center of the eye diagram.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
76
Freescale Semiconductor
PCI Express
The eye diagram must be valid for any 250 consecutive UIs.
A recovered TX UI is calculated over 3500 consecutive unit intervals of sample data. The eye diagram is
created using all edges of the 250 consecutive UI in the center of the 3500 UI used for calculating the
TX UI.
NOTE
The reference impedance for return loss measurements is 50 Ω to ground for
both the D+ and D– line (that is, as measured by a vector network analyzer
with 50-Ω probes, see Figure 53). Note that the series capacitors, CTX, are
optional for the return loss measurement.
VRX-DIFF = 0 mV
(D+ D– Crossing Point)
VRX-DIFF = 0 mV
(D+ D– Crossing Point)
VRX-DIFFp-p-MIN > 175 mV
0.4 UI = TRX-EYE-MIN
Figure 53. Minimum Receiver Eye Timing and Voltage Compliance Specification
17.5.1
Compliance Test and Measurement Load
The AC timing and voltage parameters must be verified at the measurement point, as specified within
0.2 inches of the package pins, into a test/measurement load shown in Figure 54.
NOTE
The allowance of the measurement point to be within 0.2 inches of the
package pins is meant to acknowledge that package/board routing may
benefit from D+ and D– not being exactly matched in length at the package
pin boundary.
D+ Package
Pin
C = CTX
TX
Silicon
+ Package
D– Package
Pin
C = CTX
R = 50 Ω
R = 50 Ω
Figure 54. Compliance Test/Measurement Load
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
77
Package Description
18 Package Description
This section details package parameters, pin assignments, and dimensions.
18.1
Package Parameters for the MPC8533E FC-PBGA
The package parameters for flip chip plastic ball grid array (FC-PBGA) are provided in Table 56.
Table 56. Package Parameters
Parameter
Package outline
Interconnects
Ball pitch
Ball diameter (typical)
Solder ball (Pb-free)
PBGA1
29 mm × 29 mm
783
1 mm
0.6 mm
96.5% Sn
3.5% Ag
Note:
1. (FC-PBGA) without a lid.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
78
Freescale Semiconductor
Package Description
18.2
Mechanical Dimensions of the MPC8533E FC-PBGA
Figure 55 shows the mechanical dimensions and bottom surface nomenclature of the MPC8533E,
783 FC-PBGA package without a lid.
Notes:
1. All dimensions are in millimeters.
2. Dimensions and tolerances per ASME Y14.5M-1994.
3. Maximum solder ball diameter measured parallel to datum A.
4. Datum A, the seating plane, is determined by the spherical crowns of the solder balls.
5. Parallelism measurement shall exclude any effect of mark on top surface of package.
6. Capacitors may not be present on all parts. Care must be taken not to short exposed metal capacitor pads.
7. All dimensions are symmetric across the package center lines, unless dimensioned otherwise.
Figure 55. Mechanical Dimensions and Bottom Surface Nomenclature
of the MPC8533E FC-PBGA without a Lid
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
79
Package Description
18.3
Pinout Listings
NOTE
The naming convention of TSEC1 and TSEC3 is used to allow the splitting
voltage rails for the eTSEC blocks and to ease the port of existing
PowerQUICC III software.
NOTE
The DMA_DACK[0:1] and TEST_SEL pins must be set to a proper state
during POR configuration. Please refer to Table 57 for more details.
Table 57 provides the pinout listing for the MPC8533E 783 FC-PBGA package.
Table 57. MPC8533E Pinout Listing
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
PCI
PCI1_AD[31:0]
AE8, AD8, AF8, AH12, AG12, AB9, AC9, AE9,
AD10, AE10, AC11, AB11, AB12, AC12, AF12,
AE11, Y14, AE15, AC15, AB15, AA15, AD16,
Y15, AB16, AF18, AE18, AC17, AE19, AD19,
AB17, AB18, AA16
I/O
OV DD
—
PCI1_C_BE[3:0]
AC10, AE12, AA14, AD17
I/O
OV DD
—
PCI1_GNT[4:1]
AE7, AG11,AH11, AC8
O
OV DD
4, 8, 24
PCI1_GNT0
AE6
I/O
OV DD
—
PCI1_IRDY
AF13
I/O
OV DD
2
PCI1_PAR
AB14
I/O
OV DD
—
PCI1_PERR
AE14
I/O
OV DD
2
PCI1_SERR
AC14
I/O
OV DD
2
PCI1_STOP
AA13
I/O
OV DD
2
PCI1_TRDY
AD13
I/O
OV DD
2
PCI1_REQ[4:1]
AF9, AG10, AH10, AD6
I
OV DD
—
PCI1_REQ0
AB8
I/O
OV DD
—
PCI1_CLK
AH26
I
OV DD
—
PCI1_DEVSEL
AC13
I/O
OV DD
2
PCI1_FRAME
AD12
I/O
OV DD
2
PCI1_IDSEL
AG6
I
OV DD
—
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
80
Freescale Semiconductor
Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
DDR SDRAM Memory Interface
MDQ[0:63]
A26, B26, C22, D21, D25, B25, D22, E21, A24,
A23, B20, A20, A25, B24, B21, A21, E19, D19,
E16, C16, F19, F18, F17, D16, B18, A18, A15,
B14, B19, A19, A16, B15, D1, F3, G1, H2, E4,
G5, H3, J4, B2, C3, F2, G2, A2, B3, E1, F1, L5,
L4,N3, P3, J3, K4, N4, P4, J1, K1, P1, R1, J2,
K2, N1, R2
I/O
GVDD
—
MECC[0:7]
G12, D14, F11, C11, G14, F14,C13, D12
I/O
GVDD
—
MDM[0:8]
C25, B23, D18, B17, G4, C2, L3, L2, F13
O
GVDD
21
MDQS[0:8]
D24, B22, C18, A17, J5, C1, M4, M2, E13
I/O
GVDD
—
MDQS[0:8]
C23, A22, E17, B16, K5, D2, M3, P2, D13
I/O
GVDD
—
MA[0:15]
B7, G8, C8, A10, D9, C10, A11, F9, E9, B12,
A5, A12, D11, F7, E10, F10
O
GVDD
—
MBA[0:2]
A4, B5, B13
O
GVDD
—
MWE
B4
O
GVDD
—
MCAS
E7
O
GVDD
—
MRAS
C5
O
GVDD
—
MCKE[0:3]
H10, K10, G10, H9
O
GVDD
10
MCS[0:3]
D3, H6, C4, G6
O
GVDD
—
MCK[0:5]
A9, J11, J6, A8, J13, H8
O
GVDD
—
MCK[0:5]
B9, H11, K6, B8, H13, J8
O
GVDD
—
MODT[0:3]
E5, H7, E6, F6
O
GVDD
—
MDIC[0:1]
H15, K15
I/O
GVDD
25
TEST_IN
A13
I
—
27
TEST_OUT
A6
O
—
17
23
Local Bus Controller Interface
LAD[0:31]
K22, L21, L22, K23, K24, L24, L25, K25, L28,
L27, K28, K27, J28, H28, H27, G27, G26, F28,
F26, F25, E28, E27, E26, F24, E24, C26, G24,
E23, G23, F22, G22, G21
I/O
BVDD
LDP[0:3]
K26, G28, B27, E25
I/O
BVDD
LA[27]
L19
O
BVDD
4, 8
LA[28:31]
K16, K17, H17,G17
O
BVDD
4, 6, 8
LCS[0:4]
K18, G19, H19, H20, G16
O
BVDD
—
LCS5/DMA_DREQ2
H16
I/O
BVDD
1
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
81
Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
LCS6/DMA_DACK2
J16
O
BVDD
1
LCS7/DMA_DDONE2
L18
O
BVDD
1
LWE0/LBS0/LSDDQM[0]
J22
O
BVDD
4, 8
LWE1/LBS1/LSDDQM[1]
H22
O
BVDD
4, 8
LWE2/LBS2/LSDDQM[2]
H23
O
BVDD
4, 8
LWE3/LBS3/LSDDQM[3]
H21
O
BVDD
4, 8
LALE
J26
O
BVDD
4, 7, 8
LBCTL
J25
O
BVDD
4, 7, 8
LGPL0/LSDA10
J20
O
BVDD
4, 8
LGPL1/LSDWE
K20
O
BVDD
4, 8
LGPL2/LOE/LSDRAS
G20
O
BVDD
4, 7, 8
LGPL3/LSDCAS
H18
O
BVDD
4, 8
LGPL4/LGTA/LUPWAIT/
LPBSE
L20
I/O
BVDD
—
LGPL5
K19
O
BVDD
4, 8
LCKE
L17
O
BVDD
—
LCLK[0:2]
H24, J24, H25
O
BVDD
—
LSYNC_IN
D27
I
BVDD
—
LSYNC_OUT
D28
O
BVDD
—
DMA
DMA_DACK[0:1]
Y13, Y12
O
OV DD
4, 8, 9
DMA_DREQ[0:1]
AA10, AA11
I
OV DD
—
DMA_DDONE[0:1]
AA7, Y11
O
OV DD
—
Programmable Interrupt Controller
UDE
AH15
I
OV DD
—
MCP
AG18
I
OV DD
—
IRQ[0:7]
AG22, AF17, AD21, AF19, AG17, AF16, AC23,
AC22
I
OV DD
—
IRQ[8]
AC19
I
OV DD
—
IRQ[9]/DMA_DREQ3
AG20
I
OV DD
1
IRQ[10]/DMA_DACK3
AE27
I/O
OV DD
1
IRQ[11]/DMA_DDONE3
AE24
I/O
OV DD
1
IRQ_OUT
AD14
O
OV DD
2
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
82
Freescale Semiconductor
Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
Ethernet Management Interface
EC_MDC
AC7
O
OV DD
4, 8, 14
EC_MDIO
Y9
I/O
OV DD
—
I
LVDD
—
Gigabit Reference Clock
EC_GTX_CLK125
T2
Three-Speed Ethernet Controller (Gigabit Ethernet 1)
TSEC1_RXD[7:0]
U10, U9, T10, T9, U8, T8, T7, T6
I
LVDD
—
TSEC1_TXD[7:0]
T5, U5, V5, V3, V2, V1, U2, U1
O
LVDD
4, 8, 14
TSEC1_COL
R5
I
LVDD
—
TSEC1_CRS
T4
I/O
LVDD
16
TSEC1_GTX_CLK
T1
O
LVDD
—
TSEC1_RX_CLK
V7
I
LVDD
—
TSEC1_RX_DV
U7
I
LVDD
—
TSEC1_RX_ER
R9
I
LVDD
4, 8
TSEC1_TX_CLK
V6
I
LVDD
—
TSEC1_TX_EN
U4
O
LVDD
22
TSEC1_TX_ER
T3
O
LVDD
—
Three-Speed Ethernet Controller (Gigabit Ethernet 3)
TSEC3_RXD[7:0]
P11, N11, M11, L11, R8, N10, N9, P10
I
LVDD
—
TSEC3_TXD[7:0]
M7, N7, P7, M8, L7, R6, P6, M6
O
LVDD
4, 8, 14
TSEC3_COL
M9
I
LVDD
—
TSEC3_CRS
L9
I/O
LVDD
16
TSEC3_GTX_CLK
R7
O
LVDD
—
TSEC3_RX_CLK
P9
I
LVDD
—
TSEC3_RX_DV
P8
I
LVDD
—
TSEC3_RX_ER
R11
I
LVDD
—
TSEC3_TX_CLK
L10
I
LVDD
—
TSEC3_TX_EN
N6
O
LVDD
22
TSEC3_TX_ER
L8
O
LVDD
4, 8
DUART
UART_CTS[0:1]
AH8, AF6
I
OV DD
—
UART_RTS[0:1]
AG8, AG9
O
OV DD
—
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
83
Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
UART_SIN[0:1]
AG7, AH6
UART_SOUT[0:1]
AH7, AF7
I2
Pin Type
Power
Supply
Notes
I
OV DD
—
O
OV DD
—
C interface
IIC1_SCL
AG21
I/O
OV DD
20
IIC1_SDA
AH21
I/O
OV DD
20
IIC2_SCL
AG13
I/O
OV DD
20
IIC2_SDA
AG14
I/O
OV DD
20
SerDes 1
SD1_RX[0:7]
N28, P26, R28, T26, Y26, AA28, AB26, AC28
I
XVDD
—
SD1_RX[0:7]
N27, P25, R27, T25, Y25, AA27, AB25, AC27
I
XVDD
—
SD1_TX[0:7]
M23, N21, P23, R21, U21, V23, W21, Y23
O
XVDD
—
SD1_TX[0:7]
M22, N20, P22, R20, U20, V22, W20, Y22
O
XVDD
—
SD1_PLL_TPD
V28
O
XVDD
17
SD1_REF_CLK
U28
I
XVDD
—
SD1_REF_CLK
U27
I
XVDD
—
SD1_TST_CLK
T22
—
—
SD1_TST_CLK
T23
—
—
SerDes 2
SD2_RX[0]
AD25
I
XVDD
—
SD2_RX[2]
AD1
I
XVDD
26
SD2_RX[3]
AB2
I
XVDD
26
SD2_RX[0]
AD26
I
XVDD
—
SD2_RX[2]
AC1
I
XVDD
26
SD2_RX[3]
AA2
I
XVDD
26
SD2_TX[0]
AA21
O
XVDD
—
SD2_TX[2]
AC4
O
XVDD
17
SD2_TX[3]
AA5
O
XVDD
17
SD2_TX[0]
AA20
O
XVDD
—
SD2_TX[2]
AB4
O
XVDD
17
SD2_TX[3]
Y5
O
XVDD
17
SD2_PLL_TPD
AG3
O
XVDD
17
SD2_REF_CLK
AE2
I
XVDD
—
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
84
Freescale Semiconductor
Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
SD2_REF_CLK
AF2
I
XVDD
—
SD2_TST_CLK
AG4
—
—
—
SD2_TST_CLK
AF4
—
—
—
O
OV DD
—
I
OV DD
—
General-Purpose Output
GPOUT[0:7]
AF22, AH23, AG27, AH25, AF21, AF25, AG26,
AF26
General-Purpose Input
GPIN[0:7]
AH24, AG24, AD23, AE21, AD22, AF23, AG25,
AE20
System Control
HRESET
AG16
I
OV DD
—
HRESET_REQ
AG15
O
OV DD
21
SRESET
AG19
I
OV DD
—
CKSTP_IN
AH5
I
OV DD
—
CKSTP_OUT
AA12
O
OV DD
2, 4
Debug
TRIG_IN
AC5
I
OV DD
—
TRIG_OUT/READY/
QUIESCE
AB5
O
OV DD
5, 8, 15,
21
MSRCID[0:1]
Y7, W9
O
OV DD
4, 5, 8
MSRCID[2:4]
AA9, AB6, AD5
O
OV DD
5, 15, 21
MDVAL
Y8
O
OV DD
5
CLK_OUT
AE16
O
OV DD
10
Clock
RTC
AF15
I
OV DD
—
SYSCLK
AH16
I
OV DD
—
JTAG
TCK
AG28
I
OV DD
—
TDI
AH28
I
OV DD
11
TDO
AF28
O
OV DD
10
TMS
AH27
I
OV DD
11
TRST
AH22
I
OV DD
11
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
85
Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
DFT
L1_TSTCLK
AC20
I
OV DD
18
L2_TSTCLK
AE17
I
OV DD
18
LSSD_MODE
AH19
I
OV DD
18
TEST_SEL
AH13
I
OV DD
3
Thermal Management
TEMP_ANODE
Y3
—
—
13
TEMP_CATHODE
AA3
—
—
13
O
OV DD
8, 15, 21
Power Management
ASLEEP
AH17
Power and Ground Signals
GND
D5, M10, F4, D26, D23, C12, C15, E20, D8,
B10, E3, J14, K21, F8, A3, F16, E12, E15, D17,
L1, F21, H1, G13, G15, G18, C6, A14, A7, G25,
H4, C20, J12, J15, J17, F27, M5, J27, K11, L26,
K7, K8, L12, L15, M14, M16, M18, N13, N15,
N17, N2, P5, P14, P16, P18, R13, R15, R17,
T14, T16, T18, U13, U15, U17, AA8, U6, Y10,
AC21, AA17, AC16, V4, AD7, AD18, AE23,
AF11, AF14, AG23, AH9, A27, B28, C27
—
—
—
OVDD[1:17]
Y16, AB7, AB10, AB13, AC6, AC18, AD9,
AD11, AE13, AD15, AD20, AE5, AE22, AF10,
AF20, AF24, AF27
Power for PCI
and other
standards
(3.3 V)
OV DD
—
LVDD[1:2]
R4, U3
Power for
TSEC1
interfaces
(2.5 V, 3.3 V)
LVDD
—
TVDD[1:2]
N8, R10
Power for
TSEC3
interfaces
(2.5 V, 3.3 V)
TVDD
—
GV DD
B1, B11, C7, C9, C14, C17, D4, D6, R3, D15,
E2, E8,C24, E18, F5, E14, C21, G3, G7, G9,
G11, H5, H12, E22, F15, J10, K3, K12, K14,
H14, D20, E11, M1, N5
Power for DDR1
and DDR2
DRAM I/O
voltage (1.8 V,
2.5 V)
GVDD
—
BVDD
L23, J18, J19, F20, F23, H26, J21, J23
Power for
local bus (1.8 V,
2.5 V, 3.3 V)
BVDD
—
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Package Description
Table 57. MPC8533E Pinout Listing (continued)
Power
Supply
Notes
Power for core
(1.0 V)
VDD
—
M27, N25, P28, R24, R26, T24, T27, U25, W24,
W26, Y24, Y27, AA25, AB28, AD27
Core power for
SerDes 1
transceivers
(1.0 V)
SVDD
—
SVDD_SRDS2
AB1, AC26, AD2, AE26, AG2
Core power for
SerDes 2
transceivers
(1.0 V)
SVDD
—
XVDD_SRDS
M21, N23, P20, R22, T20, U23, V21, W22, Y20
Pad power for
SerDes 1
transceivers
(1.0 V)
XVDD
—
XVDD_SRDS2
Y6, AA6, AA23, AF5, AG5
Pad power for
SerDes 2
transceivers
(1.0 V)
XVDD
—
XGND_SRDS
M20, M24, N22, P21, R23, T21, U22, V20, W23,
Y21
—
—
—
XGND_SRDS2
Y4, AA4, AA22, AD4, AE4, AH4
—
—
—
SGND_SRDS
M28, N26, P24, P27, R25, T28, U24, U26, V24,
W25, Y28, AA24, AA26, AB24, AB27, AC24,
AD28
—
—
—
AGND_SRDS
V27
SerDes PLL
GND
—
—
SGND_SRDS2
Y2, AA1, AB3, AC2, AC3, AC25, AD3, AD24,
AE3, AE1, AE25, AF3, AH2
—
—
—
AGND_SRDS2
AF1
SerDes PLL
GND
—
—
AVDD_LBIU
C28
Power for local
bus PLL
(1.0 V)
—
19
AVDD_PCI1
AH20
Power for PCI
PLL
(1.0 V)
—
19
AVDD_CORE
AH14
Power for e500
PLL (1.0 V)
—
19
AVDD_PLAT
AH18
Power for CCB
PLL (1.0 V)
—
19
Signal
Package Pin Number
Pin Type
VDD
L16, L14, M13, M15, M17, N12, N14, N16, N18,
P13, P15, P17, R12, R14, R16, R18, T13, T15,
T17, U12, U14, U16, U18,
SVDD_SRDS
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
AVDD_SRDS
W28
Power for
SRDSPLL
(1.0 V)
—
19
AVDD_SRDS2
AG1
Power for
SRDSPLL
(1.0 V)
—
19
SENSEVDD
W11
O
VDD
12
SENSEVSS
W10
—
—
12
Analog Signals
MVREF
A28
Reference
voltage signal
for DDR
MVREF
—
SD1_IMP_CAL_RX
M26
—
200Ω to GND
—
SD1_IMP_CAL_TX
AE28
—
100Ω to GND
—
SD1_PLL_TPA
V26
—
AVDD_SRDS
ANALOG
17
SD2_IMP_CAL_RX
AH3
I
200 Ω to GND
—
SD2_IMP_CAL_TX
Y1
I
100 Ω to GND
—
SD2_PLL_TPA
AH1
O
AVDD_SRDS2
ANALOG
17
—
—
—
No Connect Pins
NC
C19, D7, D10, K13, L6, K9, B6, F12, J7, M19,
M25, N19, N24, P19, R19, AB19, T12, W3,
M12, W5, P12, T19, W1, W7, L13, U19, W4, V8,
V9, V10, V11, V12, V13, V14, V15, V16, V17,
V18, V19, W2, W6, W8, T11, U11, W12, W13,
W14, W15, W16, W17, W18, W19, W27, V25,
Y17, Y18, Y19, AA18, AA19, AB20, AB21,
AB22, AB23, J9
Notes:
1. All multiplexed signals are listed only once and do not re-occur. For example, LCS5/DMA_REQ2 is listed only once in the
Local Bus Controller Interface section, and is not mentioned in the DMA section even though the pin also functions as
DMA_REQ2.
2. Recommend a weak pull-up resistor (2–10 KΩ) be placed on this pin to OVDD.
3. This pin must always be pulled high.
4. This pin is a reset configuration pin. It has a weak internal pull-up P-FET which is enabled only when the processor is in the
reset state. This pull-up is designed such that it can be overpowered by an external 4.7-kΩ pull-down resistor. However, if
the signal is intended to be high after reset, and if there is any device on the net which might pull down the value of the net
at reset, then a pull-up or active driver is needed.
5. Treat these pins as no connects (NC) unless using debug address functionality.
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Package Description
Table 57. MPC8533E Pinout Listing (continued)
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
6. The value of LA[28:31] during reset sets the CCB clock to SYSCLK PLL ratio. These pins require 4.7-kΩ pull-up or pull-down
resistors. See Section 19.2, “CCB/SYSCLK PLL Ratio.”
7. The value of LALE, LGPL2, and LBCTL at reset set the e500 core clock to CCB clock PLL ratio. These pins require 4.7-kΩ
pull-up or pull-down resistors. See Section 19.3, “e500 Core PLL Ratio.”
8. Functionally, this pin is an output, but structurally it is an I/O because it either samples configuration input during reset or
because it has other manufacturing test functions. Therefore, this pin will be described as an I/O for boundary scan.
9. For proper state of these signals during reset, these pins can be left without any pull downs, thus relying on the internal
pullup to get the values to the require 2'b11. However, if there is any device on the net which might pull down the value of
the net at reset, then a pullup is needed.
10. This output is actively driven during reset rather than being three-stated during reset.
11. These JTAG pins have weak internal pull-up P-FETs that are always enabled.
12. These pins are connected to the V DD/GND planes internally and may be used by the core power supply to improve tracking
and regulation.
13. Anode and cathode of internal thermal diode.
14. Treat pins AC7, T5, V2, and M7 as spare configuration pins cfg_spare[0:3]. The spare pins are unused POR config pins. It
is highly recommended that the customer provide the capability of setting these pins low (that is, pull-down resistor which
is not currently stuffed) in order to support new config options should they arise between revisions.
15. If this pin is connected to a device that pulls down during reset, an external pull-up is required to drive this pin to a safe state
during reset.
16. This pin is only an output in FIFO mode when used as Rx flow control.
17. Do not connect.
18. These are test signals for factory use only and must be pulled up (100 Ω to 1 kΩ) to OVDD for normal machine operation.
19. Independent supplies derived from board VDD.
20. Recommend a pull-up resistor (1 K~) be placed on this pin to OVDD.
21. The following pins must not be pulled down during power-on reset: HRESET_REQ, TRIG_OUT/READY/QUIESCE,
MSRCID[2:4], and ASLEEP.
22. This pin requires an external 4.7-kΩ pull-down resistor to prevent PHY from seeing a valid transmit enable before it is
actively driven.
23. General-purpose POR configuration of user system.
24. When a PCI block is disabled, either the POR config pin that selects between internal and external arbiter must be pulled
down to select external arbiter if there is any other PCI device connected on the PCI bus, or leave the address pins as No
Connect or terminated through 2–10 kΩ pull-up resistors with the default of internal arbiter if the address pins are not
connected to any other PCI device. The PCI block will drive the address pins if it is configured to be the PCI arbiter—through
POR config pins—irrespective of whether it is disabled via the DEVDISR register or not. It may cause contention if there is
any other PCI device connected on the bus.
25. MDIC0 is grounded through an 18.2-Ω precision 1% resistor and MDIC1 is connected GVDD through an 18.2-Ω precision
1% resistor. These pins are used for automatic calibration of the DDR IOs.
26. Connect to GND.
27.Connect to GND.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Clocking
19 Clocking
This section describes the PLL configuration of the MPC8533E . Note that the platform clock is identical
to the core complex bus (CCB) clock.
19.1
Clock Ranges
Table 58 provides the clocking specifications for the processor cores and Table 59 provides the clocking
specifications for the memory bus.
Table 58. Processor Core Clocking Specifications
Maximum Processor Core Frequency
Characteristic
667 MHz
e500 core processor frequency
800 MHz
1000 MHz
1067 MHz
Min
Max
Min
Max
Min
Max
Min
Max
667
667
667
800
667
1000
667
1067
Unit
Notes
MHz
1, 2
Notes:
1. Caution: The CCB to SYSCLK ratio and e500 core to CCB ratio settings must be chosen such that the resulting SYSCLK
frequency, e500 (core) frequency, and CCB frequency do not exceed their respective maximum or minimum operating
frequencies. Refer to Section 19.2, “CCB/SYSCLK PLL Ratio,” and Section 19.3, “e500 Core PLL Ratio,” for ratio settings.
2. The minimum e500 core frequency is based on the minimum platform frequency of 333 MHz.
Table 59. Memory Bus Clocking Specifications
Maximum Processor Core
Frequency
Characteristic
Memory bus clock speed
667, 800, 1000, 1067 MHz
Min
Max
166
266
Unit
Notes
MHz
1, 2
Notes:
1. Caution: The CCB clock to SYSCLK ratio and e500 core to CCB clock ratio settings must be chosen such that the resulting
SYSCLK frequency, e500 (core) frequency, and CCB clock frequency do not exceed their respective maximum or minimum
operating frequencies. Refer to Section 19.2, “CCB/SYSCLK PLL Ratio,” and Section 19.3, “e500 Core PLL Ratio,” for ratio
settings.
2. The memory bus speed is half of the DDR/DDR2 data rate, hence, half of the platform clock frequency.
19.2
CCB/SYSCLK PLL Ratio
The CCB clock is the clock that drives the e500 core complex bus (CCB), and is also called the platform
clock. The frequency of the CCB is set using the following reset signals (see Table 60):
• SYSCLK input signal
• Binary value on LA[28:31] at power up
Note that there is no default for this PLL ratio; these signals must be pulled to the desired values. Also note
that the DDR data rate is the determining factor in selecting the CCB bus frequency, since the CCB
frequency must equal the DDR data rate.
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Clocking
Table 60. CCB Clock Ratio
19.3
Binary Value of
LA[28:31] Signals
CCB:SYSCLK Ratio
Binary Value of
LA[28:31] Signals
CCB:SYSCLK Ratio
0000
16:1
1000
8:1
0001
Reserved
1001
9:1
0010
Reserved
1010
10:1
0011
3:1
1011
Reserved
0100
4:1
1100
12:1
0101
5:1
1101
Reserved
0110
6:1
1110
Reserved
0111
Reserved
1111
Reserved
e500 Core PLL Ratio
Table 61 describes the clock ratio between the e500 core complex bus (CCB) and the e500 core clock. This
ratio is determined by the binary value of LBCTL, LALE, and LGPL2 at power up, as shown in Table 61.
Table 61. e500 Core to CCB Clock Ratio
19.4
Binary Value of
LBCTL, LALE,
LGPL2 Signals
e500 core:CCB Clock Ratio
Binary Value of
LBCTL, LALE,
LGPL2 Signals
e500 core:CCB Clock Ratio
000
4:1
100
2:1
001
Reserved
101
5:2
010
Reserved
110
3:1
011
3:2
111
7:2
PCI Clocks
For specifications on the PCI_CLK, refer to the PCI 2.2 Local Bus Specifications.
The use of PCI_CLK is optional if SYSCLK is in the range of 33–66 MHz. If SYSCLK is outside this
range then use of PCI_CLK is required as a separate PCI clock source, asynchronous with respect to
SYSCLK.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Clocking
19.5
Security Controller PLL Ratio
Table 62 shows the SEC frequency ratio.
Table 62. SEC Frequency Ratio
Signal Name
Value (Binary)
CCB CLK:SEC CLK
LWE_B
0
2:11
1
3:12
Notes:
1. In 2:1 mode the CCB frequency must be operating <= 400 MHz.
2. In 3:1 mode any valid CCB can be used. The 3:1 mode is the default
ratio for security block.
19.6
19.6.1
Frequency Options
SYSCLK to Platform Frequency Options
Table 63 shows the expected frequency values for the platform frequency when using a CCB clock to
SYSCLK ratio in comparison to the memory bus clock speed.
Table 63. Frequency Options of SYSCLK with Respect to Memory Bus Speeds
CCB to SYSCLK
Ratio
SYSCLK (MHz)
33.33
41.66
66.66
83
100
111
133.33
Platform /CCB Frequency (MHz)
2
—
3
—
333
400
445
533
4
—
333
400
5
333
415
500
6
400
500
8
333
9
375
10
333
417
12
400
500
16
533
533
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19.6.2
Platform to FIFO Restrictions
Please note the following FIFO maximum speed restrictions based on platform speed. Refer to Section 4.4,
“Platform to FIFO Restrictions,” for additional information.
Table 64. FIFO Maximum Speed Restrictions
Platform Speed (MHz)
Maximum FIFO Speed for Reference Clocks
TSECn_TX_CLK, TSECn_RX_CLK (MHz)1
533
126
400
94
Note:
1. FIFO speed should be less than 24% of the platform speed.
20 Thermal
This section describes the thermal specifications of the MPC8533E.
20.1
Thermal Characteristics
Table 65 provides the package thermal characteristics.
Table 65. Package Thermal Characteristics
Characteristic
JEDEC Board
Symbol
Value
Unit
Notes
Junction-to-ambient natural convection
Single layer board (1s)
RθJA
26
°C/W
1, 2
Junction-to-ambient natural convection
Four layer board (2s2p)
RθJA
21
°C/W
1, 2
Junction-to-ambient (@200 ft/min)
Single layer board (1s)
RθJA
21
°C/W
1, 2
Junction-to-ambient (@200 ft/min)
Four layer board (2s2p)
RθJA
17
°C/W
1, 2
Junction-to-board thermal
—
RθJB
12
°C/W
3
Junction-to-case thermal
—
RθJC
<0.1
°C/W
4
Notes:
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, airflow, power dissipation of other components on the board, and board thermal
resistance.
2. Per JEDEC JESD51-2 and JESD51-6 with the board (JESD51-9) horizontal.
3. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
4. Thermal resistance between the active surface of the die and the case top surface determined by the cold plate method (MIL
SPEC-883 Method 1012.1) with the calculated case temperature. Actual thermal resistance is less than 0.1°C/W.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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93
Thermal
Table 66 provides the thermal resistance with heat sink in open flow.
Table 66. Thermal Resistance with Heat Sink in Open Flow
Heat Sink with Thermal Grease
Air Flow
Thermal Resistance (°C/W)
Wakefield 53 × 53 × 25 mm pin fin
Natural convection
6.1
Wakefield 53 × 53 × 25 mm pin fin
1 m/s
3.0
Aavid 35 × 31 × 23 mm pin fin
Natural convection
8.1
Aavid 35 × 31 × 23 mm pin fin
1 m/s
4.3
Aavid 30 × 30 × 9.4 mm pin fin
Natural convection
11.6
Aavid 30 × 30 × 9.4 mm pin fin
1 m/s
6.7
Aavid 43 × 41 × 16.5 mm pin fin
Natural convection
8.3
Aavid 43 × 41 × 16.5 mm pin fin
1 m/s
4.3
Simulations with heat sinks were done with the package mounted on the 2s2p thermal test board. The
thermal interface material was a typical thermal grease such as Dow Corning 340 or Wakefield 120 grease.
For system thermal modeling, the MPC8533E thermal model without a lid is shown in Figure 56. The
substrate is modeled as a block 29 × 29 × 1.18 mm with an in-plane conductivity of 18.0 W/m•K and a
through-plane conductivity of 1.0 W/m•K. The solder balls and air are modeled as a single block
29 × 29 × 0.58 mm with an in-plane conductivity of 0.034 W/m•K and a through plane conductivity of
12.1 W/m•K. The die is modeled as 7.6 × 8.4 mm with a thickness of 0.75 mm. The bump/underfill layer
is modeled as a collapsed thermal resistance between the die and substrate assuming a conductivity of
6.5 W/m•K in the thickness dimension of 0.07 mm. The die is centered on the substrate. The thermal model
uses approximate dimensions to reduce grid. Please refer to Figure 55 for actual dimensions.
20.2
Recommended Thermal Model
Table 67 shows the MPC8533E thermal model.
Table 67. MPC8533EThermal Model
Conductivity
Value
Units
Die (7.6 × 8.4 × 0.75mm)
Silicon
Temperature dependent
—
Bump/Underfill (7.6 × 8.4 × 0.070 mm) Collapsed Thermal Resistance
Kz
6.5
W/m•K
Substrate (29 × 29 × 1.18 mm)
Kx
18
Ky
18
Kz
1.0
W/m•K
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Thermal
Table 67. MPC8533EThermal Model (continued)
Conductivity
Value
Units
Solder and Air (29 × 29 × 0.58 mm)
Kx
0.034
Ky
0.034
Kz
12.1
Bump Underfill
W/m•K
Die
Substrate
Section A-A
Solder/Air
A
A
Top View
Figure 56. System Level Thermal Model for MPC8533E (Not to Scale)
The Flotherm library files of the parts have a dense grid to accurately capture the laminar boundary layer
for flow over the part in standard JEDEC environments, as well as the heat spreading in the board under
the package. In a real system, however, the part will require a heat sink to be mounted on it. In this case,
the predominant heat flow path will be from the die to the heat sink. Grid density lower than currently in
the package library file will suffice for these simulations. The user will need to determine the optimal grid
for their specific case.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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95
Thermal
20.3
Thermal Management Information
This section provides thermal management information for the flip chip plastic ball grid array (FC-PBGA)
package for air-cooled applications. Proper thermal control design is primarily dependent on the
system-level design—the heat sink, airflow, and thermal interface material. The MPC8533E implements
several features designed to assist with thermal management, including the temperature diode. The
temperature diode allows an external device to monitor the die temperature in order to detect excessive
temperature conditions and alert the system; see Section 20.3.4, “Temperature Diode,” for more
information.
The recommended attachment method to the heat sink is illustrated in Figure 57. The heat sink should be
attached to the printed-circuit board with the spring force centered over the die. This spring force should
not exceed 10 pounds force (45 Newton).
FC-PBGA Package
Heat Sink
Heat Sink
Clip
Adhesive or
Thermal Interface Material
Die
Printed-Circuit Board
Figure 57. Package Exploded Cross-Sectional View with Several Heat Sink Options
The system board designer can choose between several types of heat sinks to place on the device. There
are several commercially-available heat sinks from the following vendors:
Aavid Thermalloy
603-224-9988
80 Commercial St.
Concord, NH 03301
Internet: www.aavidthermalloy.com
Advanced Thermal Solutions
781-769-2800
89 Access Road #27.
Norwood, MA02062
Internet: www.qats.com
Alpha Novatech
408-567-8082
473 Sapena Ct. #12
Santa Clara, CA 95054
Internet: www.alphanovatech.com
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
96
Freescale Semiconductor
Thermal
International Electronic Research Corporation (IERC)
413 North Moss St.
Burbank, CA 91502
Internet: www.ctscorp.com
Millennium Electronics (MEI)
Loroco Sites
671 East Brokaw Road
San Jose, CA 95112
Internet: www.mei-thermal.com
Tyco Electronics
Chip Coolers™
P.O. Box 3668
Harrisburg, PA 17105-3668
Internet: www.chipcoolers.com
Wakefield Engineering
33 Bridge St.
Pelham, NH 03076
Internet: www.wakefield.com
818-842-7277
408-436-8770
800-522-6752
603-635-2800
Ultimately, the final selection of an appropriate heat sink depends on many factors, such as thermal
performance at a given air velocity, spatial volume, mass, attachment method, assembly, and cost. Several
heat sinks offered by Aavid Thermalloy, Advanced Thermal Solutions, Alpha Novatech, IERC, Chip
Coolers, Millennium Electronics, and Wakefield Engineering offer different heat sink-to-ambient thermal
resistances, that will allow the MPC8533E to function in various environments.
20.3.1
Internal Package Conduction Resistance
For the packaging technology, shown in Table 65, the intrinsic internal conduction thermal resistance paths
are as follows:
• The die junction-to-case thermal resistance
• The die junction-to-board thermal resistance
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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97
Thermal
Figure 58 depicts the primary heat transfer path for a package with an attached heat sink mounted to a
printed-circuit board.
Radiation
External Resistance
Convection
Heat Sink
Thermal Interface Material
Die/Package
Die Junction
Package/Leads
Internal Resistance
Printed-Circuit Board
External Resistance
Radiation
Convection
(Note the internal versus external package resistance.)
Figure 58. Package with Heat Sink Mounted to a Printed-Circuit Board
The heat sink removes most of the heat from the device. Heat generated on the active side of the chip is
conducted through the silicon and through the heat sink attach material (or thermal interface material), and
finally to the heat sink. The junction-to-case thermal resistance is low enough that the heat sink attach
material and heat sink thermal resistance are the dominant terms.
20.3.2
Thermal Interface Materials
A thermal interface material is required at the package-to-heat sink interface to minimize the thermal
contact resistance. For those applications where the heat sink is attached by spring clip mechanism,
Figure 59 shows the thermal performance of three thin-sheet thermal-interface materials (silicone,
graphite/oil, floroether oil), a bare joint, and a joint with thermal grease as a function of contact pressure.
As shown, the performance of these thermal interface materials improves with increasing contact pressure.
The use of thermal grease significantly reduces the interface thermal resistance. The bare joint results in a
thermal resistance approximately six times greater than the thermal grease joint.
Heat sinks are attached to the package by means of a spring clip to holes in the printed-circuit board (see
Figure 57). Therefore, the synthetic grease offers the best thermal performance, especially at the low
interface pressure.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Thermal
Silicone Sheet (0.006 in.)
Bare Joint
Floroether Oil Sheet (0.007 in.)
Graphite/Oil Sheet (0.005 in.)
Synthetic Grease
Specific Thermal Resistance (K-in.2/W)
2
1.5
1
0.5
0
0
10
20
30
40
50
60
70
80
Contact Pressure (psi)
Figure 59. Thermal Performance of Select Thermal Interface Materials
The system board designer can choose between several types of thermal interface. There are several
commercially-available thermal interfaces provided by the following vendors:
Chomerics, Inc.
781-935-4850
77 Dragon Ct.
Woburn, MA 01801
Internet: www.chomerics.com
Dow-Corning Corporation
800-248-2481
Corporate Center
P.O.Box 999
Midland, MI 48686-0997
Internet: www.dow.com
Shin-Etsu MicroSi, Inc.
888-642-7674
10028 S. 51st St.
Phoenix, AZ 85044
Internet: www.microsi.com
The Bergquist Company
800-347-4572
18930 West 78th St.
Chanhassen, MN 55317
Internet: www.bergquistcompany.com
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Thermal
Thermagon Inc.
4707 Detroit Ave.
Cleveland, OH 44102
Internet: www.thermagon.com
20.3.3
888-246-9050
Heat Sink Selection Examples
The following section provides a heat sink selection example using one of the commercially available heat
sinks.
For preliminary heat sink sizing, the die-junction temperature can be expressed as follows:
TJ = TI + TR + (θJC + θINT + θSA) × PD
where
TJ is the die-junction temperature
TI is the inlet cabinet ambient temperature
TR is the air temperature rise within the computer cabinet
θJC is the junction-to-case thermal resistance
θINT is the adhesive or interface material thermal resistance
θSA is the heat sink base-to-ambient thermal resistance
PD is the power dissipated by the device
During operation the die-junction temperatures (TJ) should be maintained within the range specified in
Table 2. The temperature of air cooling the component greatly depends on the ambient inlet air temperature
and the air temperature rise within the electronic cabinet. An electronic cabinet inlet-air temperature (TI)
may range from 30° to 40°C. The air temperature rise within a cabinet (TR) may be in the range of 5° to
10°C. The thermal resistance of the thermal interface material (θINT) may be about 1°C/W. Assuming a TI
of 30°C, a TR of 5°C, a FC-PBGA package θJC = 0.1, and a power consumption (PD) of 5, the following
expression for TJ is obtained:
Die-junction temperature: TJ = 30°C + 5°C + (0.1°C/W + 1.0°C/W + θSA) × PD
The heat sink-to-ambient thermal resistance (θSA) versus airflow velocity for a Thermalloy heat sink
#2328B is shown in Figure 60.
Assuming an air velocity of 1 m/s, we have an effective θSA+ of about 5°C/W, thus
TJ = 30° + 5°C + (0.1°C/W + 1.0°C/W + 5°C/W) × 5
resulting in a die-junction temperature of approximately 66, which is well within the maximum operating
temperature of the component.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
100
Freescale Semiconductor
Thermal
8
Thermalloy #2328B Pin-fin Heat Sink
(25 × 28 × 15 mm)
Heat Sink Thermal Resistance (°C/W)
7
6
5
4
3
2
1
0
0.5
1
1.5
2
2.5
3
3.5
Figure 60. Approach Air Velocity (m/s)
20.3.4
Temperature Diode
The MPC8533E has a temperature diode on the microprocessor that can be used in conjunction with other
system temperature monitoring devices (such as Analog Devices, ADT7461™). These devices use the
negative temperature coefficient of a diode operated at a constant current to determine the temperature of
the microprocessor and its environment. It is recommended that each device be individually calibrated.
The following are voltage forward biased range of the on-board temperature diode:
Vf > 0.40 V
Vf < 0.90 V
An approximate value of the ideality may be obtained by calibrating the device near the expected operating
temperature. The ideality factor is defined as the deviation from the ideal diode equation:
qVf
nKT
Ifw = Is e
–1
Another useful equation is:
KT
I
VH – VL = n q ln IH
L
where:
Ifw = Forward current
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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101
System Design Information
Is = Saturation current
Vd = Voltage at diode
Vf = Voltage forward biased
VH = Diode voltage while IH is flowing
VL = Diode voltage while IL is flowing
IH = Larger diode bias current
IL = Smaller diode bias current
q = Charge of electron (1.6 × 10 –19 C)
n = Ideality factor (normally 1.0)
K = Boltzman’s constant (1.38 × 10–23 Joules/K)
T = Temperature (Kelvins)
The ratio of IH to IL is usually selected to be 10:1. The above simplifies to the following:
VH – VL = 1.986 × 10–4 × nT
Solving for T, the equation becomes:
nT =
VH – VL
1.986 × 10–4
21 System Design Information
This section provides electrical and thermal design recommendations for successful application of the
MPC8533E.
21.1
System Clocking
This device includes six PLLs:
• The platform PLL generates the platform clock from the externally supplied SYSCLK input. The
frequency ratio between the platform and SYSCLK is selected using the platform PLL ratio
configuration bits as described in Section 19.2, “CCB/SYSCLK PLL Ratio.”
• The e500 core PLL generates the core clock as a slave to the platform clock. The frequency ratio
between the e500 core clock and the platform clock is selected using the e500 PLL ratio
configuration bits as described in Section 19.3, “e500 Core PLL Ratio.”
• The PCI PLL generates the clocking for the PCI bus.
• The local bus PLL generates the clock for the local bus.
• There are two PLLs for the SerDes block.
21.2
PLL Power Supply Filtering
Each of the PLLs listed above is provided with power through independent power supply pins
(AVDD_PLAT, AVDD_CORE, AVDD_PCI, AVDD_LBIU, and AVDD_SRDS, respectively). The AVDD
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Freescale Semiconductor
System Design Information
level should always be equivalent to VDD, and preferably these voltages will be derived directly from VDD
through a low frequency filter scheme such as the following.
There are a number of ways to reliably provide power to the PLLs, but the recommended solution is to
provide independent filter circuits per PLL power supply as illustrated in Figure 61, one to each of the
AVDD pins. By providing independent filters to each PLL the opportunity to cause noise injection from
one PLL to the other is reduced.
This circuit is intended to filter noise in the PLLs resonant frequency range from a 500 kHz to 10 MHz
range. It should be built with surface mount capacitors with minimum Effective Series Inductance (ESL).
Consistent with the recommendations of Dr. Howard Johnson in High Speed Digital Design: A Handbook
of Black Magic (Prentice Hall, 1993), multiple small capacitors of equal value are recommended over a
single large value capacitor.
Each circuit should be placed as close as possible to the specific AVDD pin being supplied to minimize
noise coupled from nearby circuits. It should be possible to route directly from the capacitors to the AV DD
pin, which is on the periphery of 783 FC-PBGA the footprint, without the inductance of vias.
Figure 61 shows the PLL power supply filter circuit.
V DD
10 Ω
AVDD
2.2 µF
2.2 µF
Low ESL Surface Mount Capacitors
GND
Figure 61. MPC8533E PLL Power Supply Filter Circuit
The AVDD_SRDSn signals provide power for the analog portions of the SerDes PLL. To ensure stability
of the internal clock, the power supplied to the PLL is filtered using a circuit similar to the one shown in
Figure 62. For maximum effectiveness, the filter circuit is placed as closely as possible to the
AVDD_SRDSn balls to ensure it filters out as much noise as possible. The ground connection should be
near the AVDD_SRDSn balls. The 0.003-µF capacitor is closest to the balls, followed by the 1-µF
capacitor, and finally the 1-Ω resistor to the board supply plane. The capacitors are connected from
AVDD_SRDSn to the ground plane. Use ceramic chip capacitors with the highest possible self-resonant
frequency. All traces should be kept short, wide, and direct.
1.0 Ω
SVDD
AV DD_SRDS
2.2 µF1
2.2 µF1
0.003 µF
GND
Note:
1. An 0805 sized capacitor is recommended for system initial bring-up.
Figure 62. SerDes PLL Power Supply Filter Circuit
Note the following:
• AVDD_SRDS should be a filtered version of SVDD.
• Signals on the SerDes interface are fed from the XVDD power plane.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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103
System Design Information
21.3
Decoupling Recommendations
Due to large address and data buses, and high operating frequencies, the device can generate transient
power surges and high frequency noise in its power supply, especially while driving large capacitive loads.
This noise must be prevented from reaching other components in the MPC8533E system, and the device
itself requires a clean, tightly regulated source of power. Therefore, it is recommended that the system
designer place at least one decoupling capacitor at each VDD, TVDD, BVDD, OVDD, GVDD, and LVDD pin
of the device. These decoupling capacitors should receive their power from separate VDD, TVDD, BVDD,
OVDD, GVDD, and LVDD; and GND power planes in the PCB, utilizing short low impedance traces to
minimize inductance. Capacitors may be placed directly under the device using a standard escape pattern.
Others may surround the part.
These capacitors should have a value of 0.01 or 0.1 µF. Only ceramic SMT (surface mount technology)
capacitors should be used to minimize lead inductance, preferably 0402 or 0603 sizes.
In addition, it is recommended that there be several bulk storage capacitors distributed around the PCB,
feeding the VDD, TVDD, BVDD, OVDD, GVDD, and LVDD planes, to enable quick recharging of the
smaller chip capacitors. These bulk capacitors should have a low ESR (equivalent series resistance) rating
to ensure the quick response time necessary. They should also be connected to the power and ground
planes through two vias to minimize inductance. Suggested bulk capacitors—100–330 µF (AVX TPS
tantalum or Sanyo OSCON). However, customers should work directly with their power regulator vendor
for best values and types and quantity of bulk capacitors.
21.4
SerDes Block Power Supply Decoupling Recommendations
The SerDes block requires a clean, tightly regulated source of power (SVDD and XVDD) to ensure low
jitter on transmit and reliable recovery of data in the receiver. An appropriate decoupling scheme is
outlined below.
Only surface mount technology (SMT) capacitors should be used to minimize inductance. Connections
from all capacitors to power and ground should be done with multiple vias to further reduce inductance.
• First, the board should have at least 10 × 10-nF SMT ceramic chip capacitors as close as possible
to the supply balls of the device. Where the board has blind vias, these capacitors should be placed
directly below the chip supply and ground connections. Where the board does not have blind vias,
these capacitors should be placed in a ring around the device as close to the supply and ground
connections as possible.
• Second, there should be a 1-µF ceramic chip capacitor on each side of the device. This should be
done for all SerDes supplies.
• Third, between the device and any SerDes voltage regulator there should be a 10-µF, low
equivalent series resistance (ESR) SMT tantalum chip capacitor and a 100-µF, low ESR SMT
tantalum chip capacitor. This should be done for all SerDes supplies.
21.5
Connection Recommendations
To ensure reliable operation, it is highly recommended to connect unused inputs to an appropriate signal
level. All unused active low inputs should be tied to VDD, TVDD, BVDD, OVDD, GVDD, and LVDD as
required. All unused active high inputs should be connected to GND. All NC (no connect) signals must
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
System Design Information
remain unconnected. Power and ground connections must be made to all external VDD, TVDD, BVDD,
OVDD, GVDD, and LVDD, and GND pins of the device.
21.6
Pull-Up and Pull-Down Resistor Requirements
The MPC8533E requires weak pull-up resistors (2–10 kΩ is recommended) on open drain type pins
including I2C pins and MPIC interrupt pins.
Correct operation of the JTAG interface requires configuration of a group of system control pins as
demonstrated in Figure 65. Care must be taken to ensure that these pins are maintained at a valid deasserted
state under normal operating conditions as most have asynchronous behavior and spurious assertion will
give unpredictable results.
The following pins must NOT be pulled down during power-on reset: TSEC3_TXD[3], HRESET_REQ,
TRIG_OUT/READY/QUIESCE, MSRCID[2:4], ASLEEP. The DMA_DACK[0:1] and TEST_SEL pins
must be set to a proper state during POR configuration. Refer to the pinout listing table (Table 57) for more
details. Refer to the PCI 2.2 Local Bus Specifications, for all pullups required for PCI.
21.7
Output Buffer DC Impedance
The MPC8533E drivers are characterized over process, voltage, and temperature. For all buses, the driver
is a push-pull single-ended driver type (open drain for I2C). To measure Z0 for the single-ended drivers,
an external resistor is connected from the chip pad to OVDD or GND. Then, the value of each resistor is
varied until the pad voltage is OVDD/2 (see Figure 63). The output impedance is the average of two
components, the resistances of the pull-up and pull-down devices. When data is held high, SW1 is closed
(SW2 is open) and RP is trimmed until the voltage at the pad equals OVDD/2. RP then becomes the
resistance of the pull-up devices. RP and RN are designed to be close to each other in value. Then,
Z0 = (RP + RN)/2.
OV DD
RN
SW2
Data
Pad
SW1
RP
OGND
Figure 63. Driver Impedance Measurement
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
105
System Design Information
Table 68 summarizes the signal impedance targets. The driver impedances are targeted at minimum VDD,
nominal OVDD, 90°C.
Table 68. Impedance Characteristics
Impedance
Local Bus, Ethernet,
DUART, Control,
Configuration, Power
Management
PCI
DDR DRAM
Symbol
Unit
RN
43 Target
25 Target
20 Target
Z0
W
RP
43 Target
25 Target
20 Target
Z0
W
Note: Nominal supply voltages. See Table 1.
21.8
Configuration Pin Muxing
The MPC8533E provides the user with power-on configuration options which can be set through the use
of external pull-up or pull-down resistors of 4.7 kΩ on certain output pins (see customer visible
configuration pins). These pins are generally used as output only pins in normal operation.
While HRESET is asserted however, these pins are treated as inputs. The value presented on these pins
while HRESET is asserted, is latched when HRESET deasserts, at which time the input receiver is disabled
and the I/O circuit takes on its normal function. Most of these sampled configuration pins are equipped
with an on-chip gated resistor of approximately 20 kΩ. This value should permit the 4.7-kΩ resistor to pull
the configuration pin to a valid logic low level. The pull-up resistor is enabled only during HRESET (and
for platform /system clocks after HRESET deassertion to ensure capture of the reset value). When the input
receiver is disabled the pull-up is also, thus allowing functional operation of the pin as an output with
minimal signal quality or delay disruption. The default value for all configuration bits treated this way has
been encoded such that a high voltage level puts the device into the default state and external resistors are
needed only when non-default settings are required by the user.
Careful board layout with stubless connections to these pull-down resistors coupled with the large value
of the pull-down resistor should minimize the disruption of signal quality or speed for output pins thus
configured.
The platform PLL ratio and e500 PLL ratio configuration pins are not equipped with these default pull-up
devices.
21.9
JTAG Configuration Signals
Correct operation of the JTAG interface requires configuration of a group of system control pins as
demonstrated in Figure 65. Care must be taken to ensure that these pins are maintained at a valid deasserted
state under normal operating conditions as most have asynchronous behavior and spurious assertion will
give unpredictable results.
Boundary-scan testing is enabled through the JTAG interface signals. The TRST signal is optional in the
IEEE 1149.1 specification, but is provided on all processors built on Power Architecture™ technology.
The device requires TRST to be asserted during reset conditions to ensure the JTAG boundary logic does
not interfere with normal chip operation. While it is possible to force the TAP controller to the reset state
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Freescale Semiconductor
System Design Information
using only the TCK and TMS signals, generally systems will assert TRST during the power-on reset flow.
Simply tying TRST to HRESET is not practical because the JTAG interface is also used for accessing the
common on-chip processor (COP) function.
The COP function of these processors allow a remote computer system (typically, a PC with dedicated
hardware and debugging software) to access and control the internal operations of the processor. The COP
interface connects primarily through the JTAG port of the processor, with some additional status
monitoring signals. The COP port requires the ability to independently assert HRESET or TRST in order
to fully control the processor. If the target system has independent reset sources, such as voltage monitors,
watchdog timers, power supply failures, or push-button switches, then the COP reset signals must be
merged into these signals with logic. The arrangement shown in Figure 65 allows the COP port to
independently assert HRESET or TRST, while ensuring that the target can drive HRESET as well.
The COP interface has a standard header, shown in Figure 64, for connection to the target system, and is
based on the 0.025" square-post, 0.100" centered header assembly (often called a Berg header). The
connector typically has pin 14 removed as a connector key.
The COP header adds many benefits such as breakpoints, watchpoints, register and memory
examination/modification, and other standard debugger features. An inexpensive option can be to leave
the COP header unpopulated until needed.
There is no standardized way to number the COP header; consequently, many different pin numbers have
been observed from emulator vendors. Some are numbered top-to-bottom then left-to-right, while others
use left-to-right then top-to-bottom, while still others number the pins counter clockwise from pin 1 (as
with an IC). Regardless of the numbering, the signal placement recommended in Figure 64 is common to
all known emulators.
21.9.1
Termination of Unused Signals
If the JTAG interface and COP header will not be used, Freescale recommends the following connections:
• TRST should be tied to HRESET through a 0-kΩ isolation resistor so that it is asserted when the
system reset signal (HRESET) is asserted, ensuring that the JTAG scan chain is initialized during
the power-on reset flow. Freescale recommends that the COP header be designed into the system
as shown in Figure 65. If this is not possible, the isolation resistor will allow future access to TRST
in case a JTAG interface may need to be wired onto the system in future debug situations.
• No pull-up/pull-down is required for TDI, TMS, or TDO.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
Freescale Semiconductor
107
System Design Information
COP_TDO
1
2
NC
COP_TDI
3
4
COP_TRST
COP_RUN/STOP
5
6
COP_VDD_SENSE
COP_TCK
7
8
COP_CHKSTP_IN
COP_TMS
9
10
NC
COP_SRESET
11
12
NC
COP_HRESET
13
KEY
No pin
COP_CHKSTP_OUT
15
16
GND
Figure 64. COP Connector Physical Pinout
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
108
Freescale Semiconductor
System Design Information
OV DD
From Target
Board Sources
(if any)
SRESET
HRESET
13
11
10 kΩ
SRESET 6
10 kΩ
HRESET1
COP_HRESET
10 kΩ
COP_SRESET
B
10 kΩ
A
5
10 kΩ
10 kΩ
4
1
2
3
4
5
6
7
8
9
10
11
12
6
COP Header
5
15
15
COP_VDD_SENSE2
10 Ω
NC
COP_CHKSTP_OUT
14 3
CKSTP_OUT
10 kΩ
COP_CHKSTP_IN
CKSTP_IN
8
COP_TMS
16
9
COP Connector
Physical Pinout
TRST1
10 kΩ
KEY
13 No pin
COP_TRST
1
3
TMS
COP_TDO
TDO
COP_TDI
TDI
COP_TCK
7
2
10 kΩ
TCK
NC
10
NC
12
4
16
Notes:
1. The COP port and target board should be able to independently assert HRESET and TRST to the processor
in order to fully control the processor as shown here.
2. Populate this with a 10-Ω resistor for short-circuit/current-limiting protection.
3. The KEY location (pin 14) is not physically present on the COP header.
4. Although pin 12 is defined as a No Connect, some debug tools may use pin 12 as an additional GND pin for
improved signal integrity.
5. This switch is included as a precaution for BSDL testing. The switch should be closed to position A during BSDL
testing to avoid accidentally asserting the TRST line. If BSDL testing is not being performed, this switch should be
closed to position B.
6. Asserting SRESET causes a machine check interrupt to the e500 core.
Figure 65. JTAG Interface Connection
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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System Design Information
21.10 Guidelines for High-Speed Interface Termination
21.10.1 SerDes Interface Entirely Unused
If the high-speed SerDes interface is not used at all, the unused pin should be terminated as described in
this section. However, the SerDes must always have power applied to its supply pins.
The following pins must be left unconnected (float):
• SD_TX[0:7]
• SD_TX[0:7]
The following pins must be connected to GND:
• SD_RX[0:7]
• SD_RX[0:7]
• SD_REF_CLK
• SD_REF_CLK
21.10.2 SerDes Interface Partly Unused
If only part of the high speed SerDes interface pins are used, the remaining high-speed serial I/O pins
should be terminated as described in this section.
The following pins must be left unconnected (float) if not used:
• SD_TX[0:7]
• SD_TX[0:7]
The following pins must be connected to GND if not used:
• SD_RX[0:7]
• SD_RX[0:7]
• SD_REF_CLK
• SD_REF_CLK
21.11 Guideline for PCI Interface Termination
PCI termination if not used at all is done as follows.
Option 1
• If PCI arbiter is enabled during POR,
• All AD pins will be driven to the stable states after POR. Therefore, all ADs pins can be floating.
• All PCI control pins can be grouped together and tied to OVDD through a single 10-kΩ resistor.
• It is optional to disable PCI block through DEVDISR register after POR reset.
Option 2
• If PCI arbiter is disabled during POR,
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Device Nomenclature
•
•
All AD pins will be in the input state. Therefore, all ADs pins need to be grouped together and tied
to OVDD through a single (or multiple) 10-kΩ resistor(s).
All PCI control pins can be grouped together and tied to OVDD through a single 10-kΩ resistor.
21.12 Guideline for LBIU Termination
If the LBIU parity pins are not used, the following list shows the termination recommendation:
• For LDP[0:3]: tie them to ground or the power supply rail via a 4.7-kΩ resistor.
• For LPBSE: tie it to the power supply rail via a 4.7-kΩ resistor (pull-up resistor).
22 Device Nomenclature
Ordering information for the parts fully covered by this hardware specifications document is provided in
Section 22.3, “Part Marking.” Contact your local Freescale sales office or regional marketing team for
order information.
22.1
Industrial and Commercial Tier Qualification
The MPC8533E device has been tested to meet the commercial tier qualification. Table 69 provides a
description for commercial and industrial qualifications.
Table 69. Commercial and Industrial Description
Tier1
Typical Application
Use Time
Commercial
5 years
Part-time/ Full-Time PC's, consumer electronics, office automation, SOHO networking,
portable telecom products, PDA's, etc.
Industrial
10 years
Typically Full-Time
Power-On Hours
Example of Typical Applications
Installed telecom equipment, work stations, servers, warehouse
equipment, etc.
Note:
1. Refer to Table 2 for operating temperature ranges. Temperature is independent of tier and varies per product.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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111
Device Nomenclature
22.2
Nomenclature of Parts Fully Addressed by this Document
Table 70 provides the Freescale part numbering nomenclature for the MPC8533E.
Table 70. Device Nomenclature
MPC
nnnn
E
C
Product
Part
Encryption
Temperature Range
Code
Identifier Acceleration
MPC
8533
Blank = not
included
E = included
Blank = 0° to 90°C
HX
AA
X
B
Package1
Processor
Frequency2
Platform
Frequency
Revision
Level
VT = FC-PBGA
(lead free)
F = 333 MHz
AL = 667 MHz
AN = 800 MHz G = 400 MHz
AQ = 1000 MHz J = 533 MHz
AR = 1067 MHz
Contact local
Freescale
sales office
Notes:
1. See Section 18, “Package Description,” for more information on available package types.
2. Processor core frequencies supported by parts addressed by this specification only. Not all parts described in this
specification support all core frequencies. Additionally, parts addressed by part number specifications may support other
maximum core frequencies.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Freescale Semiconductor
Device Nomenclature
22.3
Part Marking
Parts are marked as in the example shown in Figure 66.
MPCnnnnCHXAAXB
MMMMM CCCCC
ATWLYYWW
FC-PBGA
Notes:
MMMMM is the 5-digit mask number.
ATWLYYWW is the traceability code.
CCCCC is the country of assembly. This space is left blank if parts are assembled in the United States.
Figure 66. Part Marking for FC-PBGA Device
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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113
Document Revision History
23 Document Revision History
Table 71 provides a revision history for the MPC8533E hardware specification.
Table 71. MPC8533E Document Revision History
Revision
Date
Substantive Change(s)
3
11/2009
• Update Section 20.3.4, “Temperature Diode,”
• Update Table 56 Package Parameters from 95.5%sn to 96.5%sn
2
01/2009
•
• Update power number table to include 1067 MHz/533 MHz power numbers.
• Remove Part number tables from Hardware spec. The part numbers are available on Freescale
web site product page.
• Removed I/O power numbers from the Hardware spec. and added the table to bring-up guide
applacation note
• Updated RX_CLK duty cycle min, and max value to meet the industry standard GMII duty cycle.
• In Table 35, removed note 1 and renumbered remaining note.
• Update paragraph Section 21.3, “Decoupling Recommendations
• Update tDDKHMP, tDDKHME in Table 18
• Update Figure 5 DDR Output Timing Diagram
1
06/2008
Correction in Table 18 DDR SDRAM Output AC Timing Specifications tMCK Max value
Improvement to Section 16, “High-Speed Serial Interfaces (HSSI)
Update Figure 55 Mechanical Dimensions
Correction in Table 43 Local Bus General Timing Parameters—PLL Bypassed
0
04/2008
Initial release.
MPC8533E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 3
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Document Revision History
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Document Number: MPC8533EEC
Rev. 3
11/2009
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