BCX54...BCX56 NPN Silicon AF Transistors For AF driver and output stages 1 High collector current 2 Low collector-emitter saturation voltage 3 Complementary types: BCX51...BCX53 (PNP) 2 VPS05162 Type Marking Pin Configuration BCX54 BA 1=B 2=C 3=E SOT89 BCX54-10 BC 1=B 2=C 3=E SOT89 BCX54-16 BD 1=B 2=C 3=E SOT89 BCX55 BE 1=B 2=C 3=E SOT89 BCX55-10 BG 1=B 2=C 3=E SOT89 BCX55-16 BM 1=B 2=C 3=E SOT89 BCX56 BH 1=B 2=C 3=E SOT89 BCX56-10 BK 1=B 2=C 3=E SOT89 BCX56-16 BL 1=B 2=C 3=E SOT89 1 Package Jul-10-2001 BCX54...BCX56 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Collector-base voltage BCX54 Unit BCX55 BCX56 45 60 80 VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg 1 V A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jul-10-2001 BCX54...BCX56 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCX54 45 - - BCX55 60 - - BCX56 80 - - BCX54 45 - - BCX55 60 - - BCX56 100 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 20 µA hFE 25 - - BCX54...56 40 - 250 hFE-grp.10 63 100 160 hFE-grp.16 100 160 250 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-base breakdown voltage IC = 100 µA, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) - IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V hFE DC current gain 1) hFE IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t ≤=300µs, D = 2% 3 Jul-10-2001 BCX54...BCX56 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 10 3 1.2 BCX 54...56 EHP00445 MHz W P tot fT 5 0.8 10 2 0.6 5 0.4 0.2 0 0 15 30 45 60 90 105 120 °C 75 10 1 10 0 150 5 10 1 5 10 2 mA ΙC TS Permissible pulse load Collector cutoff current ICBO = f (T A) Ptotmax / PtotDC = f (tp ) VCB = 30V 10 3 BCX 54...56 EHP00446 Ptot max 5 Ptot DC D= 10 4 nA tp tp T 10 3 Ι CB0 T BCX 54...56 EHP00447 max 10 3 5 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 typ 10 1 5 5 10 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 0 0 50 100 ˚C 150 TA tp 4 Jul-10-2001 BCX54...BCX56 Collector current IC = f (VBE) Collector-emitter saturation voltage VCE = 2V IC = f (VCEsat), h FE = 10 10 4 BCX 54...56 EHP00448 10 mA 4 BCX 54...56 EHP00449 mA ΙC ΙC 3 10 10 5 5 100 ˚C 25 ˚C -50 ˚C 10 2 10 5 5 1 10 10 5 5 10 0 0 0.2 0.6 0.4 3 0.8 10 1.0 V 1.2 100 ˚C 25 ˚C -50 ˚C 2 1 0 0 0.2 0.4 VBE DC current gain hFE = f (I C) IC = f (VBEsat ), hFE = 10 VCE = 2V BCX 54...56 V 0.8 VCE sat Base-emitter saturation voltage 10 4 0.6 EHP00450 10 3 BCX 54...56 EHP00451 mA 5 ΙC h FE 10 3 100 ˚C 5 10 10 2 100 ˚C 25 ˚C -50 ˚C 5 25 ˚C -50 ˚C 2 5 10 1 1 10 5 5 10 0 0 0.2 0.4 0.6 0.8 10 0 10 -1 1.0 V 1.2 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC VBE sat 5 Jul-10-2001