IPB010N06N MOSFET OptiMOSTMPower-Transistor,60V D²-PAK7pin Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 tab 1 7 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.0 mΩ ID 180 A Qoss 228 nC QG(0V..10V) 208 nC Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode Package Marking RelatedLinks IPB010N06N PG-TO263-7 010N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 180 180 45 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=40K/W1) - 720 A TC=25°C - - 1600 mJ ID=100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area1) RthJA - - 40 K/W - Soldering temperature, wave and reflow soldering are allowed Tsold - - 260 °C Reflow MSL1 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=280µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.8 1.0 1.0 1.5 mΩ VGS=10V,ID=100A VGS=6V,ID=25A Gate resistance1) RG - 1.8 2.7 Ω - Transconductance gfs 160 310 - S |VDS|>2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 15000 18750 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 3400 4250 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 130 260 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 37 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=3Ω Rise time tr - 36 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=3Ω Turn-off delay time td(off) - 74 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=3Ω Fall time tf - 23 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=3Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 65 - nC VDD=30V,ID=100A,VGS=0to10V Qg(th) - 46 - nC VDD=30V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 37 49 nC VDD=30V,ID=100A,VGS=0to10V Switching charge Qsw - 56 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total Qg - 208 243 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.2 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 184 - nC VDS=0.1V,VGS=0to10V Qoss - 228 285 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 180 A TC=25°C - 720 A TC=25°C - 0.9 1.2 V VGS=0V,IF=100A,Tj=25°C trr - 87 139 ns VR=30V,IF=100A,diF/dt=100A/µs Qrr - 144 - nC VR=30V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 320 200 280 160 240 120 ID[A] Ptot[W] 200 160 80 120 80 40 40 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 10 100 1 µs 10 µs 0.5 100 µs 102 0.1 ZthJC[K/W] ID[A] 10 ms 101 0.2 10-1 1 ms DC 0.05 0.02 10 -2 0.01 100 single pulse 10-1 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 700 3.0 10 V 7V 5.5 V 6V 600 2.5 5V 500 2.0 RDS(on)[mΩ] ID[A] 400 5V 300 1.5 5.5 V 6V 1.0 7V 200 10 V 0.5 100 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0 100 200 VDS[V] 300 400 500 600 700 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 700 400 350 600 300 500 250 ID[A] gfs[S] 400 200 300 150 200 100 100 0 175 °C 0 2 50 25 °C 4 6 8 0 0 30 VGS[V] 90 120 150 180 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 60 gfs=f(ID);Tj=25°C 7 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.5 4 2.0 2800 µA 1.5 280 µA VGS(th)[V] RDS(on)[mΩ] 3 max 1.0 2 typ 1 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=100A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 175 °C Ciss 104 102 IF[A] C[pF] Coss 103 101 102 Crss 101 0 20 40 60 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 12 30 V 10 12 V 125 °C 100 °C 48 V 25 °C 8 IAV[A] VGS[V] 102 101 6 4 2 100 100 101 102 103 0 0 50 tAV[µs] 100 150 200 250 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 68 66 64 VBR(DSS)[V] 62 60 58 56 54 52 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches Final Data Sheet 10 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N RevisionHistory IPB010N06N Revision:2016-01-18,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2014-10-03 Rev. 2.3 2.4 2016-01-18 Update package outline TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.4,2016-01-18