IRF IRHY67C30CM Radiation hardened power mosfet thru-hole (to-257aa) Datasheet

PD-95837
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY67C30CM
600V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
IRHY67C30CM 100K Rads (Si)
3.0Ω
IRHY63C30CM 300K Rads (Si)
3.0Ω
ID
3.4A
3.4A
International Rectifier’s R6 TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
3.4
2.1
13.6
75
0.6
±20
97
3.4
7.5
8.1
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
C
g
For footnotes refer to the last page
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1
08/14/06
IRHY67C30CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
600
—
—
V
VGS = 0V, ID = 1.0mA
—
0.51
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
3.0
Ω
VGS = 12V, ID = 2.1A Ã
2.0
3.7
—
—
—
—
—
—
4.0
—
10
25
V
S( )
nC
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 2.1A Ã
VDS= 480V ,VGS=0V
VDS = 480V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 3.4A
VDS = 300V
ns
VDD = 300V, ID = 3.4A
VGS =12V, RG = 7.5Ω
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Ω
BVDSS
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
44
14
9.0
18
7.5
31
14
—
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1267
79
1.1
1.1
—
—
—
—
nA
nH
pF
Ω
Test Conditions
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
3.4
—
13.6
—
1.0
— 741
—
2.1
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 3.4A, VGS = 0V Ã
Tj = 25°C, IF = 3.4A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY67C30CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Units
Test Conditions
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 480V, VGS= 0V
2.9
Ω
VGS = 12V, ID = 2.1A
1.0
V
VGS = 0V, ID = 3.4A
Up to 300K Rads (Si)
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
VSD
Diode Forward Voltage
„
Min
Max
600
2.0
—
—
—
—
4.0
100
-100
10
—
—
nA
Part numbers: IRHY67C30CM and IRHY63C30CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
(MeV/(mg/cm ))
(MeV)
(µm)
@VGS = 0V
@VGS = -4V
@VGS = -12V
@VGS = - 20V
Kr
Xe
32.4
56.2
679
1060
83.3
83.5
600
600
600
600
600
600
600
-
Au
89.5
1555
84
600
600
-
-
2
VDS (V)
800
VDS
600
Kr
400
Xe
200
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY67C30CM
Pre-Irradiation
10
10
VGS
15V
12V
10V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
100
2.5
T J = 25°C
10
T J = 150°C
1
0.1
VDS = 50V
60µs PULSE
WIDTH
15
0.01
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID = 3.4A
2.0
1.5
1.0
0.5
VGS = 12V
0.0
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
4.5V
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2000
20
100KHz
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID = 3.4A
VGS, Gate-to-Source Voltage (V)
1600
C, Capacitance (pF)
IRHY67C30CM
C oss = C ds + C gd
Ciss
1200
800
400
Coss
VDS = 6480V
VDS = 300V
VDS = 120V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
4
VDS, Drain-to-Source Voltage (V)
12 16 20 24 28 32 36 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
8
10
T J = 150°C
1
T J = 25°C
0.1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1ms
0.1
VGS = 0V
0.01
0.01
0.2
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.2
100µs
1
Tc = 25°C
Tj = 150°C
Single Pulse
10
10ms
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY67C30CM
Pre-Irradiation
4
RD
VDS
VGS
3
ID, Drain Current (A)
D.U.T.
RG
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2
Fig 10a. Switching Time Test Circuit
1
VDS
90%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJC )
10
1
D = 0.50
P DM
0.20
0.10
0.05
0.1
t1
SINGLE PULSE
( THERMAL RESPONSE )
t2
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY67C30CM
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
200
TOP
160
BOTTOM
ID
1.5A
2.2A
3.4A
120
80
40
0
25
50
V(BR)DSS
75
100
125
150
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY67C30CM
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 16.7mH
Peak IL = 3.4A, VGS = 12V
 ISD ≤ 3.4A, di/dt ≤ 560A/µs,
VDD ≤ 600V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
480 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
1
2
5.08 [.200]
4.83 [.190]
1.14 [.045]
0.89 [.035]
B
10.92 [.430]
10.42 [.410]
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
3.05 [.120]
B
NOT ES :
1.
2.
3.
4.
LEAD ASSIGNMENTS
DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994.
CONT ROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2006
8
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