APT30M30B2LL
APT30M30LLL
300V 100A 0.030Ω
POWER MOS 7
R
MOSFET
B2LL
T-MAX™
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
LLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
TO-264
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M30B2LL_LLL
UNIT
300
Volts
Drain-Source Voltage
ID
Continuous Drain Current
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
5
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
400
TL
EAS
100
@ TC = 25°C
-55 to 150
°C
300
Amps
100
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 50A)
TYP
MAX
Volts
0.030
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
7-2004
Characteristic / Test Conditions
050-7153 Rev B
Symbol
DYNAMIC CHARACTERISTICS
APT30M30B2LL_LLL
Test Conditions
Characteristic
Symbol
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1895
Crss
Reverse Transfer Capacitance
f = 1 MHz
110
VGS = 10V
140
VDD = 150V
41
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 100A @ 25°C
td(off)
tf
22
VDD = 150V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
7
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
7
ns
35
ID = 100A @ 25°C
Fall Time
nC
15
VGS = 15V
Turn-off Delay Time
pF
70
RESISTIVE SWITCHING
Rise Time
UNIT
7030
VGS = 0V
3
MAX
8
INDUCTIVE SWITCHING @ 25°C
925
VDD = 200V, VGS = 15V
ID = 100A, RG = 5Ω
1345
INDUCTIVE SWITCHING @ 125°C
1055
VDD = 200V, VGS = 15V
ID = 100A, RG = 5Ω
µJ
1485
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
100
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID100A, dl S /dt = 100A/µs)
450
ns
Q rr
Reverse Recovery Charge (IS = -ID100A, dl S/dt = 100A/µs)
10.0
µC
dv/
Peak Diode Recovery
dt
dv/
400
(Body Diode)
1.3
(VGS = 0V, IS = -ID100A)
dt
6
Amps
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A
5 The maximum current is limited by lead temperature
6 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C
7 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.18
0.9
0.14
0.7
0.12
0.10
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7153 Rev B
7-2004
0.20
0.16
0.3
0.06
t2
0.1
0.02
0
Peak TJ = PDM x ZθJC + TC
0.05
10-5
t1
Duty Factor D = t1/t2
0.04
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT30M30B2LL_LLL
250
VGS =15 &10V
0.0271
Power
(Watts)
0.0656
0.0859
0.00899F
0.0202F
0.293F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. ( ”C)
8V
200
7.5V
150
7V
100
6.5
6V
50
5.5V
Case temperature
0
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
100
TJ = +25°C
50
TJ = +125°C
0
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
100
80
60
40
20
0
25
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20
40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
V
D
= 50A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
D
1.20
1.15
120
0.0
-50
1.30
NORMALIZED TO
= 10V @ I = 50A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2004
200
V
050-7153 Rev B
ID, DRAIN CURRENT (AMPERES)
250
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
10,000
100
100µS
10
1mS
D
= 100A
VDS=60V
12
VDS=150V
VDS=240V
8
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
200
120
V
180
td(off)
100
80
V
DD
R
G
G
= 300V
T = 125°C
J
60
L = 100µH
40
= 5Ω
T = 125°C
J
L = 100µH
140
= 5Ω
= 200V
DD
R
160
tr and tf (ns)
td(on) and td(off) (ns)
Crss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Coss
1,000
10
1
10
100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Ciss
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
APT30M30B2LL_LLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
400
tf
120
100
80
tr
60
td(on)
40
20
20
0
40
60
0
40
80
100
120
140
160
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
100
120
140
160
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
3500
V
R
G
D
T = 125°C
SWITCHING ENERGY (µJ)
7-2004
050-7153 Rev B
L = 100µH
E ON includes
diode reverse recovery.
2000
Eoff
1500
1000
Eon
500
0
40
60
DD
I
= 5Ω
J
2500
V
= 200V
80
100
120
140
160
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
3000
DD
60
80
= 200V
= 100A
T = 125°C
4000
J
L = 100µH
EON includes
Eoff
diode reverse recovery.
300
2000
Eon
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M30B2LL_LLL
90%
Gate Voltage
10%
Gate Voltage
T 125°C
J
td(off)
td(on)
tr
5%
Drain Voltage
tf
Drain Current
90%
5%
10%
TJ125°C
90%
10%
Drain Voltage
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
0
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
7-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7153 Rev B
Drain
20.80 (.819)
21.46 (.845)